NAND04GR3B2CZL1E [NUMONYX]

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories; 4千兆, 8千兆, 2112字节/ 1056字的页面多平面架构, 1.8 V和3 V , NAND闪存
NAND04GR3B2CZL1E
型号: NAND04GR3B2CZL1E
厂家: NUMONYX B.V    NUMONYX B.V
描述:

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
4千兆, 8千兆, 2112字节/ 1056字的页面多平面架构, 1.8 V和3 V , NAND闪存

闪存
文件: 总69页 (文件大小:1707K)
下载:  下载PDF数据表文档文件

NAND04GR3B2CZL1F

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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13 NUMONYX

NAND04GR3B2CZL6E

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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13 NUMONYX

NAND04GR3B2CZL6F

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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18 NUMONYX

NAND04GR3B2D

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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18 NUMONYX

NAND04GR3B2DN1E

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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17 NUMONYX

NAND04GR3B2DN1F

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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13 NUMONYX

NAND04GR3B2DN6E

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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26 NUMONYX

NAND04GR3B2DN6F

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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10 NUMONYX

NAND04GR3B2DZL1E

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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13 NUMONYX

NAND04GR3B2DZL1F

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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19 NUMONYX

NAND04GR3B2DZL6E

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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8 NUMONYX

NAND04GR3B2DZL6F

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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12 NUMONYX

NAND04GR3B3CN1F

512MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND04GR3B4CN1E

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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14 NUMONYX

NAND04GR3B4CN1F

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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25 NUMONYX