RC48F4400PCY00 [NUMONYX]
Numonyx Wireless Flash Memory (W18); 恒忆无线闪存（ W18 ）
| 型号： | RC48F4400PCY00 |
| 厂家： | 
NUMONYX B.V |
| 描述： | Numonyx Wireless Flash Memory (W18) |
| 文件： | 总102页 (文件大小：1372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Numonyx™ Wireless Flash Memory (W18)
Datasheet
Product Features
High Performance Read-While-Write/Erase
Architecture
— Burst frequency at 66 MHz
(zero wait states)
— 60 ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
— 16-bit wide data bus
— 4-, 8-, 16-, and Continuous-Word Burst
mode reads
Software
— Burst and Page mode reads in all Blocks,
across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/
word
— 5 µs (typ.) Program and Erase Suspend
latency time
— Flash Data Integrator (FDI) and Common
Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
Security
— 128-Bit OTP Protection Register:
64 unique pre-programmed bits +
64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/
Unlocking with Lock-Down Capability
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— VCC = 1.70 V to 1.95 V
— VCCQ (90 nm) = 1.7 V to 1.95 V
Quality and Reliability
— VCCQ (130 nm) = 1.7 V to 2.24 V or 1.35 V
to 1.80 V
— VCCQ (130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)
— Temperature Range: –40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Order Number: 290701-18
November 2007
Legal Lines and Disclaimers
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND
CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A
PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx
products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.
Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice.
Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented
subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or
otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting
Numonyx's website at http://www.numonyx.com.
Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries.
*Other names and brands may be claimed as the property of others.
Copyright © 2007, Numonyx B.V., All Rights Reserved.
Datasheet
2
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Contents
1.0 Introduction..............................................................................................................7
1.1
1.2
Nomenclature.....................................................................................................7
Conventions .......................................................................................................8
2.0 Functional Overview..................................................................................................9
2.1 Memory Map and Partitioning.............................................................................. 10
3.0 Package Information...............................................................................................13
3.1
3.2
W18 — 90 nm Lithography .................................................................................13
W18 — 130 nm.................................................................................................14
4.0 Ballout and Signal Descriptions ...............................................................................16
4.1
4.2
Signal Ballout ................................................................................................... 16
Signal Descriptions............................................................................................ 18
5.0 Maximum Ratings and Operating Conditions............................................................ 21
5.1
5.2
Absolute Maximum Ratings.................................................................................21
Operating Conditions .........................................................................................21
6.0 Electrical Specifications........................................................................................... 23
6.1
6.2
DC Current Characteristics.................................................................................. 23
DC Voltage Characteristics.................................................................................. 24
7.0 AC Characteristics ................................................................................................... 26
7.1
7.2
7.3
7.4
7.5
AC Write Characteristics..................................................................................... 36
Erase and Program Times................................................................................... 42
Reset Specifications........................................................................................... 43
AC I/O Test Conditions.......................................................................................44
Device Capacitance ........................................................................................... 45
8.0 Power and Reset Specifications...............................................................................46
8.1
8.2
8.3
8.4
Active Power..................................................................................................... 46
Automatic Power Savings (APS) ..........................................................................46
Standby Power.................................................................................................. 46
Power-Up/Down Characteristics........................................................................... 46
8.4.1 System Reset and RST#..........................................................................46
8.4.2 VCC, VPP, and RST# Transitions............................................................... 47
Power Supply Decoupling ................................................................................... 47
8.5
9.0 Bus Operations Overview ........................................................................................48
9.1
Bus Operations .................................................................................................48
9.1.1 Reads................................................................................................... 48
9.1.2 Writes................................................................................................... 49
9.1.3 Output Disable.......................................................................................49
9.1.4 Burst Suspend .......................................................................................49
9.1.5 Standby................................................................................................50
9.1.6 Reset.................................................................................................... 50
Device Commands............................................................................................. 50
Command Sequencing .......................................................................................53
9.2
9.3
10.0 Read Operations......................................................................................................55
10.1 Asynchronous Page Read Mode ........................................................................... 55
10.2 Synchronous Burst Read Mode............................................................................ 55
10.3 Read Array.......................................................................................................56
10.4 Read Identifier.................................................................................................. 56
November 2007
Order Number: 290701-18
Datasheet
3
Numonyx™ Wireless Flash Memory (W18)
10.5 CFI Query.........................................................................................................57
10.6 Read Status Register..........................................................................................57
10.7 Clear Status Register .........................................................................................58
11.0 Program Operations.................................................................................................59
11.1 Word Program...................................................................................................59
11.2 Factory Programming.........................................................................................60
11.3 Enhanced Factory Program (EFP) .........................................................................61
11.3.1 EFP Requirements and Considerations .......................................................61
11.3.2 Setup....................................................................................................62
11.3.3 Program................................................................................................62
11.3.4 Verify....................................................................................................62
11.3.5 Exit.......................................................................................................63
12.0 Program and Erase Operations.................................................................................65
12.1 Program/Erase Suspend and Resume ...................................................................65
12.2 Block Erase.......................................................................................................67
12.3 Read-While-Write and Read-While-Erase...............................................................69
13.0 Security Modes ........................................................................................................71
13.1 Block Lock Operations ........................................................................................71
13.1.1 Lock......................................................................................................72
13.1.2 Unlock...................................................................................................72
13.1.3 Lock-Down ............................................................................................72
13.1.4 Block Lock Status ...................................................................................73
13.1.5 Lock During Erase Suspend......................................................................73
13.1.6 Status Register Error Checking .................................................................73
13.1.7 WP# Lock-Down Control..........................................................................74
13.2 Protection Register.............................................................................................74
13.2.1 Reading the Protection Register................................................................75
13.2.2 Programing the Protection Register ...........................................................75
13.2.3 Locking the Protection Register.................................................................75
13.3 VPP Protection...................................................................................................77
14.0 Set Read Configuration Register ..............................................................................78
14.1 Read Mode (RCR[15]) ........................................................................................79
14.2 First Access Latency Count (RCR[13:11])..............................................................79
14.2.1 Latency Count Settings............................................................................80
14.3 WAIT Signal Polarity (RCR[10]) ...........................................................................81
14.4 WAIT Signal Function .........................................................................................81
14.5 Data Hold (RCR[9])............................................................................................82
14.6 WAIT Delay (RCR[8]) .........................................................................................83
14.7 Burst Sequence (RCR[7])....................................................................................83
14.8 Clock Edge (RCR[6]) ..........................................................................................84
14.9 Burst Wrap (RCR[3])..........................................................................................84
14.10 Burst Length (RCR[2:0]).....................................................................................85
A
B
C
Write State Machine States ......................................................................................86
Common Flash Interface (CFI).................................................................................89
Ordering Information...............................................................................................99
Datasheet
4
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Revision History
Date
Revision
Description
09/13/00
-001
Initial Release
Deleted 16-Mbit density
Revised ADV#, Section 2.2
Revised Protection Registers, Section 4.16
Revised Program Protection Register, Section 4.18
Revised Example in First Access Latency Count, Section 5.0.2
Revised Figure 5, Data Output with LC Setting at Code 3
Added WAIT Signal Function, Section 5.0.3
Revised WAIT Signal Polarity, Section 5.0.4
Revised Data Output Configuration, Section 5.0.5
Added Figure 7, Data Output Configuration with WAIT Signal Delay
Revised WAIT Delay Configuration, Section 5.0.6
Changed VCCQ Spec from 1.7 V – 1.95 V to 1.7 V – 2.24 V in Section 8.2, Extended Temperature
Operation
Changed ICCS Spec from 15 µA to 18 µA in Section 8.4, DC
Characteristics
01/29/01
-002
Changed ICCR Spec from 10 mA (CLK = 40 MHz, burst length = 4) and 13 mA (CLK = 52 MHz,
burst length = 4) to 13 mA, and 16 mA respectively in Section 8.4, DC Characteristics
Changed ICCWS Spec from 15 µA to 18 µA in Section 8.4, DC
Characteristics
Changed ICCES Spec from 15 µA to 18 µA in Section 8.4, DC
Characteristics
Changed tCHQX Spec from 5 ns to 3 ns in Section 8.6, AC Read
Characteristics
Added Figure 25, WAIT Signal in Synchronous Non-Read Array Operation Waveform
Added Figure 26, WAIT Signal in Asynchronous Page Mode Read
Operation Waveform
Added Figure 27, WAIT Signal in Asynchronous Single Word Read
Operation Waveform
Revised Appendix E, Ordering Information
Revised entire Section 4.10, Enhanced Factory Program Command (EFP) and Figure 6,
Enhanced Factory Program Flowchart
Revised Section 4.13, Protection Register
Revised Section 4.15, Program Protection Register
Revised Section 7.3, Capacitance, to include 128-Mbit specs
Revised Section 7.4, DC Characteristics, to include 128-Mbit specs
Revised Section 7.6, AC Read Characteristics, to include 128-Mbit device specifications
Added tVHGL Spec in Section 7.6, AC Read Characteristics
Revised Section 7.7, AC Write Characteristics, to include 128-Mbit device specifications
Minor text edits
06/12/01
-003
New Sections Organization
Added 16-Word Burst Feature
Added Burst Suspend Section
Revised Block Locking State Diagram
Revised Active Power Section, Automatic Power Savings (APS) Section and Power-Up/Down
Operation Section
Revised Extended Temperature Operation
04/05/02
-004
Added 128 Mb DC Characteristics Table and AC Read Characteristics Table
Revised Table 17. Test Configuration Component Values for Worst Case Speed Conditions
Added 0.13 µm Product DC and AC Read Characteristics
Revised AC Write Characteristics
Added Read to Write and Write to Read Transition Waveforms
Revised Reset Specifications
Various text edits
November 2007
Order Number: 290701-18
Datasheet
5
Numonyx™ Wireless Flash Memory (W18)
Date
Revision
Description
Various text edits
Updated Latency Count Section, including adding Latency Count Tables
Added section 8.4 WAIT Function and WAIT Summary Table
Updated Package Drawing and Dimensions
10/10/02
-005
11/12/02
01/14/03
-006
-007
Various text clarifications
Removed Numonyx Burst Order
Revised Table 10 “DC Current Characteristics”
Various text edits
Revised Table 22, Read Operations, tAPA
03/21/03
-008
Added note to table 15, Configuration Register Descriptions
Added note to section 3.1.1, Read
Updated Block-Lock Operations (Section 7.1 and Figure 11)
Updated Table 21 (128 Mb ICCR
)
12/17/03
02/12/04
-009
-010
Updated Table 4 (WAIT behavior)
Added QUAD+ ballout, package mechanicals, and order information
Various text edits including latest product-naming convention
Added 90 nm product line; Removed µBGA* package
Added Page- and Burst-Mode descriptions; Minor text edits
Fixed omitted text for Table 21, note 1 regarding max DC voltage on I/O pins
Removed Extended I/O Supply Voltage for 90 nm products
Minor text edits
05/06/04
06/03/04
-011
-012
Updated the title and layout of the datasheet
VCCQ Max. changed for 90 nm products
Updated “Absolute Maximum Ratings” table
Typical ICCS updated as 35 μA
Updated subtitle
06/29/04
-013
Typical ICCS updated as 22 μA
01/21/05
-014
-015
Minor text edits
Typical 90nm APS updated to 22 µA in Table 11, “DC Current Characteristics” on page 23.
Updated 90nm VLKO to 0.7 V in Table 12, “DC Voltage Characteristics” on page 24.
Product ordering information updated.
07-Dec-2005
Added line item RD48F1000W0YTQ0 and RD48F1000W0YBQ0, in QUAD+ ballout, 10x8x1.2
package.
December 2006
016
Removed extended range voltage specifications that are no longer supported.
Removed tAVQV/tCHQV 80ns/14ns; Applied new template/format.
August 2007
017
18
Updated ordering information
Applied Numonyx branding.
November 2007
Datasheet
6
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
1.0
Introduction
This datasheet contains information about the Numonyx™ Wireless Flash Memory
(W18) device family. This section describes nomenclature used in the datasheet.
Section 2.0 provides an overview of the W18 flash memory device. Section 6.0,
Section 7.0, and Section 8.0 describe the electrical specifications for extended
temperature product offerings. Ordering information can be found in Section C.
The Numonyx™ Wireless Flash Memory (W18) device with flexible multi-partition dual-
operation architecture, provides high-performance Asynchronous and Synchronous
Burst reads. It is an ideal memory for low-voltage burst CPUs. Combining high read
performance with flash memory intrinsic non-volatility, the W18 device eliminates the
traditional system-performance paradigm of shadowing redundant code memory from
slow nonvolatile storage to faster execution memory. It reduces total memory
requirement that increases reliability and reduces overall system power consumption
and cost. The W18 device’s flexible multi-partition architecture allows program or erase
to occur in one partition while reading from another partition. This allows for higher
data write throughput compared to single-partition architectures and designers can
choose code and data partition sizes. The dual-operation architecture allows two
processors to interleave code operations while program and erase operations take place
in the background.
1.1
Nomenclature
Table 1:
Acronyms
APS
Automatic Power Savings
Block Base Address
BBA
CFI
Common Flash Interface
Command User Interface
Don’t Use
CUI
DU
EFP
Enhanced Factory Programming
Flash Data Integrator
No Connect
FDI
NC
OTP
PBA
RCR
RWE
RWW
SCSP
SRD
VF BGA
WSM
One-Time Programmable
Partition Base Address
Read Configuration Register
Read-While-Erase
Read-While-Write
Stacked Chip Scale Package
Status Register Data
Very-thin, Fine-pitch, Ball Grid Array
Write State Machine
November 2007
Order Number: 290701-18
Datasheet
7
Numonyx™ Wireless Flash Memory (W18)
1.2
Conventions
Table 2:
Conventions
Refers to the full VCC voltage range of 1.7 V – 1.95 V (except where noted) and “VPP = 12 V” refers to 12 V
±5%.
“1.8 V”
Set
Refers to registers means the bit is a logical 1 and cleared means the bit is a logical 0.
Often used interchangeably to refer to the external signal connections on the package (ball is the term used for
VF BGA).
Pin and signal
Word
2 bytes or 16 bits.
Signal
Voltage
Names are in all CAPS (see Section 4.2, “Signal Descriptions” on page 18.)
Applied to the signal is subscripted for example VPP
.
Throughout this document, references are made to top, bottom, parameter, and partition. To clarify these references, the
following conventions have been adopted:
Block
A group of bits (or words) that erase simultaneously with one block erase instruction.
Contains 32-Kwords.
Main block
Parameter
block
Contains 4-Kwords.
Block Base
Address (BBA)
The first address of a block.
Partition
A group of blocks that share erase and program circuitry and a common Status Register.
Partition Base
Address (PBA)
The first address of a partition. For example, on a 32-Mbit top-parameter device partition number 5 has a PBA
of 0x140000.
Top partition
Located at the highest physical device address. This partition may be a main partition or a parameter partition.
Located at the lowest physical device address. This partition may be a main partition or a parameter partition.
Contains only main blocks.
Bottom
partition
Main partition
Parameter
partition
Contains a mixture of main blocks and parameter blocks.
Top parameter Has the parameter partition at the top of the memory map with the parameter blocks at the top of that
device
partition. This was formerly referred to as a Top-Boot device.
Bottom
parameter
device (BPD)
Has the parameter partition at the bottom of the memory map with the parameter blocks at the bottom of that
partition. This was formerly referred to as a Bottom-Boot Block flash device.
Datasheet
8
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
2.0
Functional Overview
This section provides an overview of the W18 device features and architecture.
The W18 device provides Read-While-Write (RWW) and Read-White-Erase (RWE)
capability with high-performance synchronous and asynchronous reads on package-
compatible densities with a 16-bit data bus. Individually-erasable memory blocks are
optimally sized for code and data storage. Eight 4-Kword parameter blocks are located
in the parameter partition at either the top or bottom of the memory map. The rest of
the memory array is grouped into 32-Kword main blocks.
The memory architecture for the W18 device consists of multiple 4-Mbit partitions, the
exact number depending on device density. By dividing the memory array into
partitions, program or erase operations can take place simultaneously during read
operations. Burst reads can traverse partition boundaries, but user application code is
responsible for ensuring that they don’t extend into a partition that is actively
programming or erasing. Although each partition has burst-read, write, and erase
capabilities, simultaneous operation is limited to write or erase in one partition while
other partitions are in a read mode.
Augmented erase-suspend functionality further enhances the RWW capabilities of this
device. An erase can be suspended to perform a program or read operation within any
block, except that which is erase-suspended. A program operation nested within a
suspended erase can subsequently be suspended to read yet another memory location.
After device power-up or reset, the W18 device defaults to asynchronous page-mode
read configuration. Writing to the device’s Read Configuration Register (RCR) enables
synchronous burst-mode read operation. In synchronous mode, the CLK input
increments an internal burst address generator. CLK also synchronizes the flash
memory with the host CPU and outputs data on every, or on every other, valid CLK
cycle after an initial latency. A programmable WAIT output signals to the CPU when
data from the flash memory device is ready.
In addition to its improved architecture and interface, the W18 device incorporates
Enhanced Factory Programming (EFP), a feature that enables fast programming and
low-power designs. The EFP feature provides the fastest currently-available program
performance, which can increase a factory’s manufacturing throughput.
The device supports read operations at 1.8 V and erase and program operations at 1.8
V or 12 V. With the 1.8 V option, VCC and VPP can be tied together for a simple, ultra-
low-power design. In addition to voltage flexibility, the dedicated VPP input provides
complete data protection when VPP ≤ VPPLK
.
This device (130 nm) allows I/O operation at voltages lower than the minimum VCCQ of
1.7 V. This Extended VCCQ range, 1.35 V – 1.8 V, permits even greater system design
flexibility.
A 128-bit protection register enhances the user’s ability to implement new security
techniques and data protection schemes. Unique flash device identification and fraud-,
cloning-, or content- protection schemes are possible through a combination of factory-
programmed and user-OTP data cells. Zero-latency locking/unlocking on any memory
block provides instant and complete protection for critical system code and data. An
additional block lock-down capability provides hardware protection where software
commands alone cannot change the block’s protection status.
The Command User Interface (CUI) is the system processor’s link to internal flash
memory operation. A valid command sequence written to the CUI initiates device Write
State Machine (WSM) operation that automatically executes the algorithms, timings,
November 2007
Order Number: 290701-18
Datasheet
9
Numonyx™ Wireless Flash Memory (W18)
and verifications necessary to manage flash memory program and erase. An internal
Status Register provides ready/busy indication results of the operation (success, fail,
and so on).
Three power-saving features– Automatic Power Savings (APS), standby, and RST# –
can significantly reduce power consumption. The device automatically enters APS mode
following read cycle completion. Standby mode begins when the system deselects the
flash memory by
de-asserting CE#. Driving RST# low produces power savings similar to standby mode.
It also resets the part to read-array mode (important for system-level reset), clears
internal Status Registers, and provides an additional level of flash write protection.
2.1
Memory Map and Partitioning
The W18 device is divided into 4-Mbit physical partitions, which allows simultaneous
RWW or RWE operations and allows users to segment code and data areas on 4-Mbit
boundaries. The device’s memory array is asymmetrically blocked, which enables
system code and data integration within a single flash device. Each block can be erased
independently in block erase mode. Simultaneous program and erase operations are
not allowed; only one partition at a time can be actively programming or erasing. See
Table 3, “Bottom Parameter Memory Map” on page 11 and Table 4, “Top Parameter
Memory Map” on page 12.
The 32-Mbit device has eight partitions, the 64-Mbit device has 16 partitions, and the
128-Mbit device has 32 partitions. Each device density contains one parameter
partition and several main partitions. The 4-Mbit parameter partition contains eight 4-
Kword parameter blocks and seven 32-Kword main blocks. Each 4-Mbit main partition
contains eight 32-Kword blocks each.
The bulk of the array is divided into main blocks that can store code or data, and
parameter blocks that allow storage of frequently updated small parameters that are
normally stored in EEPROM. By using software techniques, the word-rewrite
functionality of EEPROMs can be emulated.
.
Datasheet
10
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 3:
Bottom Parameter Memory Map
Size
(KW)
Blk #
32-Mbit
Blk #
64-Mbit
Blk #
128-Mbit
32
32
32
32
32
32
32
32
32
32
32
262
7F8000-7FFFFF
135
134
71
400000-407FFF
3F8000-3FFFFF
200000-207FFF
1F8000-1FFFFF
100000-107FFF
0F8000-0FFFFF
0C0000-0C7FFF
0B8000-0BFFFF
080000-087FFF
078000-07FFFF
134
71
70
39
38
31
30
23
22
3F8000-3FFFFF
200000-207FFF
1F8000-1FFFFF
100000-107FFF
0F8000-0FFFFF
0C0000-0C7FFF
0B8000-0BFFFF
080000-087FFF
078000-07FFFF
70
39
38
31
30
23
22
1F8000-1FFFFF
100000-107FFF
0F8000-0FFFFF
0C0000-0C7FFF
0B8000-0BFFFF
080000-087FFF
078000-07FFFF
70
39
38
31
30
23
22
32
32
15
14
040000-047FFF
038000-03FFFF
15
14
040000-047FFF
038000-03FFFF
15
14
040000-047FFF
038000-03FFFF
32
4
8
7
008000-00FFFF
007000-007FFF
8
7
008000-00FFFF
007000-007FFF
8
7
008000-00FFFF
007000-007FFF
4
0
000000-000FFF
0
000000-000FFF
0
000000-000FFF
128 Mbit is not available at 90 nm.
November 2007
Order Number: 290701-18
Datasheet
11
Numonyx™ Wireless Flash Memory (W18)
Table 4:
Top Parameter Memory Map
Size
(KW)
Blk #
32-Mbit
Blk #
64-Mbit
Blk #
128-Mbit
4
70
1FF000-1FFFFF
134
3FF000-3FFFFF
262
7FF000-7FFFFF
4
63
62
1F8000-1F8FFF
1F0000-1F7FFF
127
126
3F8000-3F8FFF
3F0000-3F7FFF
255
254
7F8000-7F8FFF
7F0000-7F7FFF
32
32
32
32
32
32
32
32
32
32
32
32
32
32
56
55
48
47
40
39
32
31
0
1C0000-1C7FFF
1B8000-1BFFFF
18000-187FFF
178000-17FFFF
140000-147FFF
138000-13FFFF
100000-107FFF
0F8000-0FFFFF
000000-007FFF
120
119
112
111
104
103
96
3C0000-3C7FFF
3B8000-3BFFFF
380000-387FFF
378000-37FFFF
340000-347FFF
338000-33FFFF
300000-307FFF
2F8000-2FFFFF
200000-207FFF
1F8000-1FFFFF
000000-007FFF
248
247
240
239
232
231
224
223
192
191
128
127
0
7C0000-7C7FFF
7B8000-7BFFFF
780000-787FFF
778000-77FFFF
740000-747FFF
738000-73FFFF
700000-707FFF
6F8000-6FFFFF
600000-607FFF
5F8000-5FFFFF
400000-407FFF
3F8000-3FFFFF
000000-007FFF
95
64
63
0
128 Mbit is not available at 90 nm.
Datasheet
12
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
3.0
Package Information
3.1
W18 — 90 nm Lithography
Figure 1: 32- and 64-Mbit VF BGA Package Drawing
Ball A1
Corner
Ball A1
Corner
D
S1
1
2
3
4
5
6
7
8
S
2
8
7
6
5
4
3
2
1
A
B
C
D
E
F
A
B
C
D
E
F
E
e
G
G
b
Top View - Bump Side Down
A1
Bottom View - Ball Side Up
A2
A
Seating
Plane
Y
Table 5:
32- and 64-Mbit VF BGA Package Dimensions
Millimeters
Inches
Nom
Dimension
Symbol
Min
Nom
Max
Min
Max
Package Height
Ball Height
A
A1
A2
b
-
-
1.000
-
-
-
0.0394
-
0.150
-
-
0.0059
-
-
Package Body Thickness
Ball (Lead) Width
0.665
0.375
7.700
9.000
0.750
56
-
0.0262
0.0148
0.3031
0.3543
0.0295
56
-
0.325
7.600
8.900
-
0.425
7.800
9.100
-
0.0128
0.2992
0.3504
-
0.0167
0.3071
0.3583
-
Package Body Width
Package Body Length
Pitch
D
E
[e]
N
Ball (Lead) Count
-
-
-
-
Seating Plane Coplanarity
Corner to Ball A1 Distance Along D
Corner to Ball A1 Distance Along E
Y
-
-
0.100
1.325
2.350
-
-
0.0039
0.0522
0.0925
S1
S2
1.125
2.150
1.225
2.250
0.0443
0.0846
0.0482
0.0886
November 2007
Order Number: 290701-18
Datasheet
13
Numonyx™ Wireless Flash Memory (W18)
3.2
W18 — 130 nm
Figure 2: 32-, 64-, and 128-Mbit VF BGA Package Drawing
Ball A1
Corner
Ball A1
Corner
D
S1
1
2
3
4
5
6
7
8
S
2
8
7
6
5
4
3
2
1
A
B
C
D
E
F
A
B
C
D
E
F
E
e
G
G
b
Top View - Bump Side Down
A1
Bottom View - Ball Side Up
A2
A
Seating
Plane
Y
Table 6:
32-, 64-, and 128-Mbit VF BGA Package Dimensions
Millimeters
Inches
Nom
Dimension
Symbol
Min
Nom
Max
Min
Max
Package Height
Ball Height
A
A1
A2
b
-
0.150
-
-
1.000
-
-
-
0.0394
-
-
0.0059
-
-
Package Body Thickness
0.665
0.375
7.700
11.000
9.000
0.750
56
-
0.0262
0.0148
0.3031
0.4331
0.3543
0.0295
56
-
Ball (Lead) Width
0.325
7.600
10.900
8.900
-
0.425
7.800
11.100
9.100
-
0.0128
0.2992
0.4291
0.3504
-
0.0167
0.3071
0.4370
0.3583
-
Package Body Width (32/64-Mbit)
Package Body Width (128-Mbit)
Package Body Length (32/64/128-Mbit)
Pitch
D
D
E
[e]
N
Ball (Lead) Count
-
-
-
-
Seating Plane Coplanarity
Y
-
-
0.100
1.325
2.975
2.350
-
-
0.0039
0.0522
0.1171
0.0925
Corner to Ball A1 Distance Along D (32/64-Mbit)
Corner to Ball A1 Distance Along D (128-Mbit)
Corner to Ball A1 Distance Along E (32/64/128-Mbit)
S1
S1
S2
1.125
2.775
2.150
1.225
2.2875
2.250
0.0443
0.1093
0.0846
0.0482
0.1132
0.0886
Datasheet
14
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 3: 128-Mbit QUAD+ Package Drawing
S1
A1 Index
Mark
1
2
3
4
5
6
7
8
8
7
6
5
4
3
2
1
S2
A
B
C
D
E
F
A
B
C
D
E
F
D
e
G
G
H
J
H
J
K
K
L
L
M
M
b
E
Bottom View - Ball Up
A
Top View - Ball Down
A2
A1
Y
Drawing not to scale.
Millimeters
Nom
Inches
Nom
Dimensions
Package Height
Ball Height
Package Body Thickness
Ball (Lead) Width
Package Body Length
Package Body Width
Pitch
Ball (Lead) Count
Seating Plane Coplanarity
Corner to Ball A1 Distance Along E
Corner to Ball A1 Distance Along D
Symbol
A
A1
A2
b
D
E
e
N
Min
Max Notes
1.200
Min
Max
0.0472
0.200
0.0079
0.860
0.375
10.000
8.000
0.800
88
0.0339
0.0148
0.3937
0.3150
0.0315
88
0.325
9.900
7.900
0.425
10.100
8.100
0.0128
0.3898
0.3110
0.0167
0.3976
0.3189
Y
S1
S2
0.100
1.300
0.700
0.0039
0.0512
0.0276
1.100
0.500
1.200
0.600
0.0433
0.0197
0.0472
0.0236
November 2007
Order Number: 290701-18
Datasheet
15
Numonyx™ Wireless Flash Memory (W18)
4.0
Ballout and Signal Descriptions
4.1
Signal Ballout
The W18 device is available in a 56-ball VF BGA and µBGA Chip Scale Package with
0.75 mm ball pitch, or the 88-ball (80 active balls) QUAD+ SCSP package. Figure 4
shows the device ballout for the VF BGA package. Figure 5 shows the device ballout for
the QUAD+ package.
Figure 4: 56-Ball VF BGA Ballout
1
2
3
4
5
6
7
8
8
7
6
5
4
3
2
1
A
B
C
D
E
F
A
B
C
D
E
F
VCC
CLK
A18
A17
A19
A6
A5
A7
A6
A18
A17
A19
VCC
CLK
A11
A8
A9
VSS
A20
A21
VPP
A4
A3
A2
A4
VPP
VSS
A20
A21
A8
A9
A11
A12
A13
A12
A13
A3
A2
A5
A7
RST#
WE#
RST#
WE#
A10
A10
ADV#
ADV#
A15
A14 WAIT
DQ15 DQ6
A16
DQ12
DQ2
WP#
DQ1
A22
CE#
A1
A0
A1
A0
A22
WP#
DQ1
DQ12
DQ2
A16
WAIT A14
DQ6 DQ15
A15
VCCQ
DQ4
CE#
DQ4
VCCQ
VSS
DQ7
DQ14 DQ13
VSSQ DQ5
DQ11 DQ10
DQ9
DQ0
OE#
OE#
DQ0
DQ9
DQ10 DQ11
DQ13 DQ14
DQ5 VSSQ
VSS
DQ7
G
G
VCC
DQ3
VCCQ DQ8
VSSQ
VSSQ
DQ8 VCCQ
DQ3
VCC
Top View - Ball Side Down
Complete Ink Mark Not Shown
Bottom View - Ball Side Up
Notes:
1.
2.
On lower density devices, upper address balls can be treated as NC.; for example, 32-Mbit density, A21 and A22 are NC).
See Section 3.0, “Package Information” on page 13 for mechanical specifications for the package.
Datasheet
16
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 5: 88-Ball (80 Active Balls) QUAD+ Ballout
1
2
3
4
5
6
7
8
DU
DU
DU
DU
A
B
C
D
E
F
A4
A5
A18
R-LB#
A17
A7
A19
A23
A24
A25
VSS F1-VCC F2-VCC
A21
A22
A9
A11
A12
A13
A15
A16
VSS
S-CS2
CLK
F-VPP,
F-VPEN
A3
R-WE# P1-CS#
A2
F-WP# ADV#
A20
A8
A10
A14
A1
A6
R-UB# F-RST# F-WE#
G
A0
D8
D2
D10
D5
D13
WAIT F2-CE#
H
J
R-OE#
D0
D1
D9
D3
D12
D4
D14
D6
D7
F2-OE#
VCCQ
S-CS1# F1-OE#
D11
D15
K
L
P-Mode,
P-CRE
F1-CE# P2-CS# F3-CE# S-VCC P-VCC F2-VCC VCCQ
VSS
DU
VSS
DU
VCCQ F1-VCC VSS
VSS
VSS
DU
VSS
DU
M
Top View - Ball Side Down
Legend:
SRAM/PSRAM specific
Flash specific
Global
Notes:
1.
2.
Unused upper address balls can be treated as NC; for example, 128-Mbit device, A[25:23] are not used.
See Section 3.0, “Package Information” on page 13 for the mechanical specifications for the package.
November 2007
Order Number: 290701-18
Datasheet
17
Numonyx™ Wireless Flash Memory (W18)
4.2
Signal Descriptions
Table 7 describes the signals used on the VF BGA package. Table 8 describes the
signals used on the QUAD+ package.
Table 7:
Signal Descriptions - VF BGA Package
Symbol
Type
Name and Function
A[22:0]
Input
ADDRESS INPUTS: For memory addresses. 32-Mbit: A[20:0]; 64-Mbit: A[21:0]; 128-Mbit: A[22:0]
DATA INPUTS/OUTPUTS: Inputs data and commands during write cycles; outputs data during
memory, Status Register, protection register, and configuration code reads. Data pins float when the
chip or outputs are deselected. Data is internally latched during writes.
Input/
Output
D[15:0]
ADDRESS VALID: ADV# indicates valid address presence on address inputs. During synchronous
read operations, all addresses are latched on ADV#’s rising edge or the next valid CLK edge with
ADV# low, whichever occurs first.
ADV#
CE#
Input
Input
Input
Input
Input
CHIP ENABLE: Asserting CE# activates internal control logic, I/O buffers, decoders, and sense amps.
De-asserting CE# deselects the device, places it in standby mode, and places all outputs in High-Z.
CLOCK: CLK synchronizes the device to the system bus frequency during synchronous reads and
increments an internal address generator. During synchronous read operations, addresses are latched
on ADV#’s rising edge or the next valid CLK edge with ADV# low, whichever occurs first.
CLK
OUTPUT ENABLE: When asserted, OE# enables the device’s output data buffers during a read cycle.
When OE# is deasserted, data outputs are placed in a high-impedance state.
OE#
RST#
RESET: When low, RST# resets internal automation and inhibits write operations. This provides data
protection during power transitions. de-asserting RST# enables normal operation and places the
device in asynchronous read-array mode.
WAIT: The WAIT signal indicates valid data during synchronous read modes. It can be configured to
be asserted-high or asserted-low based on bit 10 of the Read Configuration Register. WAIT is tri-stated
if CE# is deasserted. WAIT is not gated by OE#.
WAIT
WE#
WP#
Output
Input
Input
WRITE ENABLE: WE# controls writes to the CUI and array. Addresses and data are latched on the
rising edge of WE#.
WRITE PROTECT: Disables/enables the lock-down function. When WP# is asserted, the lock-down
mechanism is enabled and blocks marked lock-down cannot be unlocked through software. See
Section 13.1, “Block Lock Operations” on page 71 for details on block locking.
ERASE AND PROGRAM POWER: A valid voltage on this pin allows erasing or programming. Memory
contents cannot be altered when VPP ≤ VPPLK. Block erase and program at invalid VPP voltages should
not be attempted.
Set VPP = VCC for in-system program and erase operations. To accommodate resistor or diode drops
from the system supply, the VIH level of VPP can be as low as VPP1 min. VPP must remain above VPP1
min to perform in-system flash modification. VPP may be 0 V during read operations.
VPP2 can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500 cycles.
VPP can be connected to 12 V for a cumulative total not to exceed 80 hours. Extended use of this pin
at 12 V may reduce block cycling capability.
VPP
Power
Power
DEVICE POWER SUPPLY: Writes are inhibited at VCC ≤ VLKO. Device operations at invalid VCC
voltages should not be attempted.
VCC
OUTPUT POWER SUPPLY: Enables all outputs to be driven at VCCQ. This input may be tied directly to
VCCQ
VSS
Power
Power
Power
VCC.
GROUND: Pins for all internal device circuitry must be connected to system ground.
OUTPUT GROUND: Provides ground to all outputs which are driven by VCCQ. This signal may be tied
directly to VSS.
VSSQ
DO NOT USE: Do not use this pin. This pin should not be connected to any power supplies, signals or
DU
NC
—
—
other pins and must be floated.
NO CONNECT: No internal connection; can be driven or floated.
Datasheet
18
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 8:
Signal Descriptions - QUAD+ Package (Sheet 1 of 2)
Symbol
Type
Description
ADDRESS INPUTS: Inputs for all die addresses during read and write operations.
—256-Mbit Die : AMAX= A23
—128-Mbit Die : AMAX = A22
—64-Mbit Die : AMAX = A21
—32-Mbit Die : AMAX = A20
A[MAX:MIN]
Input
—8-Mbit Die : AMAX = A18
A0 is the lowest-order 16-bit wide address.
A[25:24] denote high-order addresses reserved for future device densities.
DATA INPUTS/OUTPUTS: Inputs data and commands during write cycles, outputs data during read
cycles. Data signals float when the device or its outputs are deselected. Data are internally latched
during writes on the flash device.
Input/
Output
D[15:0]
FLASH CHIP ENABLE: Low-true input.
F[3:1]-CE# low selects the associated flash memory die. When asserted, flash internal control logic,
input buffers, decoders, and sense amplifiers are active. When deasserted, the associated flash die is
deselected, power is reduced to standby levels, data and WAIT outputs are placed in high-Z state.
F1-CE# selects or deselects flash die #1; F2-CE# selects or deselects flash die #2 and is RFU on
combinations with only one flash die. F3-CE# selects or deselects flash die #3 and is RFU on stacked
combinations with only one or two flash dies.
F[3:1]-CE#
Input
Input
Input
SRAM CHIP SELECT: Low-true / High-true input (S-CS1# / S-CS2 respectively).
When either/both SRAM Chip Select signals are asserted, SRAM internal control logic, input buffers,
decoders, and sense amplifiers are active. When either/both SRAM Chip Select signals are deasserted,
the SRAM is deselected and its power is reduced to standby levels.
S-CS1# and S-CS2 are available on stacked combinations with SRAM die and are RFU on stacked
combinations without SRAM die.
S-CS1#
S-CS2
PSRAM CHIP SELECT: Low-true input.
When asserted, PSRAM internal control logic, input buffers, decoders, and sense amplifiers are active.
When deasserted, the PSRAM is deselected and its power is reduced to standby levels.
P1-CS# selects PSRAM die #1 and is available only on stacked combinations with PSRAM die. This ball
is an RFU on stacked combinations without PSRAM. P2-CS# selects PSRAM die #2 and is available only
on stacked combinations with two PSRAM dies. This ball is an RFU on stacked combinations without
PSRAM or with a single PSRAM.
P[2:1]-CS#
FLASH OUTPUT ENABLE: Low-true input.
Fx-OE# low enables the selected flash’s output buffers. F[2:1]-OE# high disables the selected flash’s
output buffers, placing them in High-Z.
F1-OE# controls the outputs of flash die #1; F2-OE# controls the outputs of flash die #2 and flash die
#3. F2-OE# is available on stacked combinations with two or three flash die and is RFU on stacked
combinations with only one flash die.
F[2:1]-OE#
R-OE#
Input
Input
RAM OUTPUT ENABLE: Low-true input.
R-OE# low enables the selected RAM’s output buffers. R-OE# high disables the RAM output buffers,
and places the selected RAM outputs in High-Z.
R-OE# is available on stacked combinations with PSRAM or SRAM die, and is an RFU on flash-only
stacked combinations.
FLASH WRITE ENABLE: Low-true input.
F-WE#
R-WE#
Input
Input
F-WE# controls writes to the selected flash die. Address and data are latched on the rising edge of F-
WE#.
RAM WRITE ENABLE: Low-true input.
R-WE# controls writes to the selected RAM die.
R-WE# is available on stacked combinations with PSRAM or SRAM die and is an RFU on flash-only
stacked combinations.
CLOCK: Synchronizes the flash die with the system bus clock in synchronous read mode and
increments the internal address generator.
During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the next
valid CLK edge with ADV# low, whichever occurs first.
CLK
Input
In asynchronous mode, addresses are latched on the rising edge ADV#, or are continuously flow-
through when ADV# is kept asserted.
November 2007
Order Number: 290701-18
Datasheet
19
Numonyx™ Wireless Flash Memory (W18)
Table 8:
Signal Descriptions - QUAD+ Package (Sheet 2 of 2)
WAIT: Output signal.
Indicates invalid data during synchronous array or non-array flash reads. Read Configuration Register
bit 10 (RCR[10]) determines WAIT-asserted polarity (high or low). WAIT is High-Z if F-CE# is
deasserted; WAIT is not gated by F-OE#.
WAIT
Output
•
In synchronous array or non-array flash read modes, WAIT indicates invalid data when asserted
and valid data when deasserted.
•
In asynchronous flash page read, and all flash write modes, WAIT is asserted.
FLASH WRITE PROTECT: Low-true input.
F-WP# enables/disables the lock-down protection mechanism of the selected flash die.
•
F-WP# low enables the lock-down mechanism where locked down blocks cannot be unlocked with
software commands.
F-WP#
ADV#
Input
Input
•
F-WP# high disables the lock-down mechanism, allowing locked down blocks to be unlocked with
software commands.
ADDRESS VALID: Low-true input.
During synchronous flash read operations, addresses are latched on the rising edge of ADV#, or on
the next valid CLK edge with ADV# low, whichever occurs first.
In asynchronous flash read operations, addresses are latched on the rising edge of ADV#, or are
continuously flow-through when ADV# is kept asserted.
RAM UPPER / LOWER BYTE ENABLES: Low-true input.
During RAM read and write cycles, R-UB# low enables the RAM high order bytes on D[15:8], and R-
LB# low enables the RAM low-order bytes on D[7:0].
R-UB#
R-LB#
Input
Input
R-UB# and R-LB# are available on stacked combinations with PSRAM or SRAM die and are RFU on
flash-only stacked combinations.
FLASH RESET: Low-true input.
F-RST# low initializes flash internal circuitry and disables flash operations. F-RST# high enables flash
operation. Exit from reset places the flash in asynchronous read array mode.
F-RST#
P-Mode (PSRAM Mode): Low-true input.
P-Mode is used to program the Configuration Register, and enter/exit Low Power Mode of PSRAM die.
P-Mode is available on stacked combinations with asynchronous-only PSRAM die.
P-CRE (PSRAM Configuration Register Enable): High-true input.
P-CRE is high, write operations load the refresh control register or bus control register.
P-CRE is applicable only on combinations with synchronous PSRAM die.
P-Mode, P-CRE is an RFU on stacked combinations without PSRAM die.
P-Mode,
P-CRE
Input
FLASH PROGRAM AND ERASE POWER: Valid F-VPP voltage on this ball enables flash program/erase
operations.
F-VPP,
F-VPEN
Flash memory array contents cannot be altered when F-VPP(F-VPEN) < VPPLK (VPENLK). Erase / program
operations at invalid F-VPP (F-VPEN) voltages should not be attempted. Refer to flash discrete product
datasheet for additional details.
Power
Power
F-VPEN (Erase/Program/Block Lock Enables) is not available for L18/L30 SCSP products.
FLASH LOGIC POWER: F1-VCC supplies power to the core logic of flash die #1; F2-VCC supplies
power to the core logic of flash die #2 and flash die #3. Write operations are inhibited when F-VCC
VLKO. Device operations at invalid F-VCC voltages should not be attempted.
<
F[2:1]-VCC
F2-VCC is available on stacked combinations with two or three flash dies, and is an RFU on stacked
combinations with only one flash die.
SRAM POWER SUPPLY: Supplies power for SRAM operations.
S-VCC
P-VCC
Power
Power
S-VCC is available on stacked combinations with SRAM die, and is RFU on stacked combinations
without SRAM die.
PSRAM POWER SUPPLY: Supplies power for PSRAM operations.
P-VCC is available on stacked combinations with PSRAM die, and is RFU on stacked combinations
without PSRAM die.
VCCQ
VSS
Power
Power
DEVICE I/O POWER: Supply power for the device input and output buffers.
DEVICE GROUND: Connect to system ground. Do not float any VSS connection.
RESERVED for FUTURE USE: Reserved for future device functionality/ enhancements. Contact
Numonyx regarding the use of balls designated RFU.
RFU
DU
—
—
DO NOT USE: Do not connect to any other signal, or power supply; must be left floating.
Datasheet
20
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent
damage. These are stress ratings only.
Notice: This datasheet contains information on products in the design phase of development. The information
here is subject to change without notice. Do not finalize a design with this information.
Table 9:
Absolute Maximum Ratings
Parameter
Maximum Rating
–40 °C to +85 °C
Notes
Temperature under Bias
Storage Temperature
–65 °C to +125 °C
–0.5 V to +2.45 V
–0.2 V to +13.1 V
–0.2 V to +2.45 V
100 mA
Voltage on Any Pin (except VCC, VCCQ, VPP
)
1,2
1,3,4
1,2
5
VPP Voltage
V
CC and VCCQ Voltage
Output Short Circuit Current
Notes:
1.
2.
Specified voltages are with respect to VSS.
During transitions, this level may:
(130 nm) Undershoot –2.0 V for periods < 20 ns and overshoot to VCCQ +2.0 V for periods
< 20 ns
(90 nm) Undershoot –1.0 V for periods < 20 ns and overshoot to VCCQ +1.0 V for periods <
20 ns.
3.
4.
Maximum DC voltage on VPP may overshoot to +14.6 V for periods < 20 ns.
VPP program voltage is normally VPP1. VPP can be 12 V ± 0.6 V for 1000 cycles on the main blocks and 2500 cycles on
the parameter blocks during program/erase.
5.
Output shorted for no more than one second. No more than one output shorted at a time.
5.2
Operating Conditions
Warning:
Operation beyond the “Operating Conditions” is not recommended and extended
exposure beyond the “Operating Conditions”may affect device reliability.
Table 10: Extended Temperature Operation (Sheet 1 of 2)
Symbol
Parameter1
Min
Nom
Max
Unit
Note
TA
Operating Temperature
–40
1.7
1.7
1.7
0.90
11.4
-
25
1.8
1.8
1.8
1.80
12.0
-
85
°C
V
VCC
VCC Supply Voltage
1.95
1.95
2.24
1.95
12.6
80
2
2
2
1
1
1
I/O Supply Voltage (90 nm)
I/O Supply Voltage (130 nm)
VPP Voltage Supply (Logic Level)
FactoryProgramming VPP
Maximum VPP Hours
VCCQ
VPP1
VPP2
tPPH
VPP = 12 V
Hours
November 2007
Order Number: 290701-18
Datasheet
21
Numonyx™ Wireless Flash Memory (W18)
Table 10: Extended Temperature Operation (Sheet 2 of 2)
Symbol
Parameter1
Min
Nom
Max
Unit
Note
Main and Parameter Blocks
VPP ≤ VCC
100,000
-
-
-
-
1
1
1
Block
Erase
Cycles
Main Blocks
VPP = 12 V
VPP = 12 V
-
-
1000
2500
Cycles
Parameter Blocks
Notes:
1.
VPP is normally VPP1. VPP can be connected to 11.4 V–12.6 V for 1000 cycles on main blocks at extended temperatures
and 2500 cycles on parameter blocks at extended temperatures.
Contact your Numonyx field representative for VCC/VCCQ operations down to 1.65 V.
2.
Datasheet
22
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
6.0
Electrical Specifications
6.1
DC Current Characteristics
Note:
Specifications are for 130 nm and 90 nm devices unless otherwise stated; the 128 Mbit
density is supported ONLY on 90 nm.
Table 11: DC Current Characteristics (Sheet 1 of 2)
VCCQ= 1.8 V
Symbol
Parameter (1)
32/64-Mbit
128-Mbit
Typ Max
Unit
Test Condition
Note
Typ
Max
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
ILI
Input Load
—
±1
—
±1
µA
µA
8
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
Output
Leakage
ILO
D[15:0]
—
±1
—
±1
130 nm
ICCS
VCC = VCCMax
VCCQ = VCCQMax
CE# = VCC
8
22
8
50
50
50
50
8
—
8
70
—
VCC Standby
µA
9
90 nm
ICCS
RST# =VCCQ
130 nm
ICCAPS
VCC = VCCMax
VCCQ = VCCQMax
CE# = VSSQ
RST# =VCCQ
All other inputs =VCCQ or VSSQ
70
—
APS
µA
10
3
90 nm
ICCAPS
22
—
Asynchronous
Page Mode
f=13 MHz
3
6
4
7
mA
4 Word Read
6
13
14
18
20
16
18
22
25
17
20
25
30
6
13
14
19
20
16
18
22
25
—
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Burst length = 4
8
8
Burst length = 8
Synchronous CLK
= 40 MHz
3
3
10
11
7
11
11
7
Burst length =16
Average
VCC Read
ICCR
Burst length = Continuous
Burst length = 4
10
12
13
8
10
12
13
—
—
—
—
Burst length = 8
Synchronous CLK
= 54 MHz
Burst length = 16
Burst length = Continuous
Burst length = 4
11
14
16
—
Burst length = 8
Average
VCC Read
Synchronous CLK
= 66 MHz
ICCR
3, 4
—
Burst length = 16
—
Burst length = Continuous
VPP = VPP1, Program in Progress
18
8
40
15
18
8
40
15
mA
mA
ICCW
VCC Program
4,5,6
4,5,6
VPP = VPP2, Program in Progress
VPP = VPP1, Block Erase in
Progress
18
8
40
15
18
8
40
15
mA
mA
ICCE
VCC Block Erase
VPP = VPP2, Block Erase in
Progress
November 2007
Order Number: 290701-18
Datasheet
23
Numonyx™ Wireless Flash Memory (W18)
Table 11: DC Current Characteristics (Sheet 2 of 2)
VCCQ= 1.8 V
Symbol
Parameter (1)
32/64-Mbit
128-Mbit
Typ Max
25
Unit
Test Condition
Note
Typ
Max
130nm
ICCWS
CE# = VCC, Program Suspended
8
50
5
µA
µA
µA
µA
VCC Program Suspend
VCC Erase Suspend
7
90nm
ICCWS
22
8
50
50
50
—
5
—
25
—
130nm
ICCES
CE# = VCC, Erase Suspended
7
4
90nm
ICCWS
22
—
V
PP Standby
VPP Program Suspend
VPP Erase Suspend
IPPS
(IPPWS,
0.2
2
5
0.2
2
5
µA
VPP <VCC
IPPES
)
VPP ≤ VCC
IPPR
VPP Read
15
15
µA
0.05
8
0.10
22
0.05
16
0.10
37
VPP = VPP1, Program in Progress
IPPW
VPP Program
mA
5
5
VPP = VPP2, Program in Progress
VPP = VPP1, Erase in Progress
0.05
8
0.10
22
0.05
8
0.10
22
IPPE
VPP Erase
mA
V
PP = VPP2, Erase in Progress
Notes:
1.
2.
3.
All currents are RMS unless noted. Typical values at typical VCC, TA = +25° C.
VCCQ = 1.35 V - 1.8V is available on 130 nm products only.
Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation. See ICCRQ specification
for details.
Sampled, not 100% tested.
VCC read + program current is the sum of VCC read and VCC program currents.
VCC read + erase current is the sum of VCC read and VCC erase currents.
ICCES is specified with device deselected. If device is read while in erase suspend, current is ICCES plus ICCR
If VIN>VCC the input load current increases to 10 µA max.
4.
5.
6.
7.
8.
9.
10.
.
ICCS is the average current measured over any 5 ms time interval 5 μs after a CE# de-assertion.
Refer to section Section 8.2, “Automatic Power Savings (APS)” on page 46 for ICCAPS measurement
details.
6.2
DC Voltage Characteristics
Note:
Specifications are for 130 nm and 90 nm devices unless otherwise stated; the 128 Mbit
density is supported ONLY on 90 nm.
Table 12: DC Voltage Characteristics (Sheet 1 of 2)
VCCQ= 1.8 V
Symbol
Parameter
32/64-Mbit
128-Mbit
Max
Unit
Test Condition
Notes
Min
Max
Min
VIL
Input Low
0
0.4
0
0.4
V
V
2
2
VIH
Input High
VCCQ – 0.4
VCCQ
VCCQ – 0.4
VCCQ
VCC = VCCMin
VCCQ = VCCQMin
IOL = 100 µA
VOL
Output Low
-
0.1
-
0.1
V
Datasheet
24
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 12: DC Voltage Characteristics (Sheet 2 of 2)
VCCQ= 1.8 V
Symbol
Parameter
32/64-Mbit
128-Mbit
Unit
Test Condition
Notes
Min
Max
Min
Max
V
CC = VCCMin
VCCQ = VCCQMin
IOH = –100 µA
VOH
VPPLK
VLKO
Output High
VCCQ – 0.1
-
VCCQ – 0.1
-
V
VPP Lock-Out
-
0.4
-
0.4
V
V
V
V
3
4
VCC Lock (130nm)
1.0
0.7
0.9
-
-
-
1.0
-
-
-
-
V
CC Lock (90nm)
VILKOQ
VCCQ Lock
0.9
Notes:
1.
2.
VCCQ = 1.35 V - 1.8V is available on 130 nm devices only.
IL can undershoot to –1.0 V for durations of 2 ns or less and VIH can overshoot to VCCQ+1.0 V for durations of 2 ns or
V
less.
3.
4.
VPP <= VPPLK inhibits erase and program operations. Don’t use VPPL and VPPH outside their valid ranges.
Block erases, programming and lock-bit configurations are inhibited when VCC<VLKO, and not guaranteed in the range
between VLKOMIN and VCCMIN, and above VCCMAX.
November 2007
Order Number: 290701-18
Datasheet
25
Numonyx™ Wireless Flash Memory (W18)
7.0
AC Characteristics
Table 13: Read Operations — 90 nm (Sheet 1 of 2)
VCCQ
=
1.7 V – 1.95 V
#
Symbol
Parameter (1,2)
Unit
Notes
Min
Max
Asynchronous Specifications
R1
tAVAV
tAVQV
tELQV
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
Read Cycle Time
60
-
-
60
60
20
150
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7,8
7,8
7,8
4
R2
Address to Output Valid
CE# Low to Output Valid
OE# Low to Output Valid
RST# High to Output Valid
CE# Low to Output Low-Z
OE# Low to Output Low-Z
CE# High to Output High-Z
OE# High to Output High-Z
CE# (OE#) High to Output Low-Z
CE# Pulse Width High
R3
-
R4
-
R5
-
R6
0
0
-
5
4,5
5
R7
-
R8
14
14
-
R9
-
4,5
4,5
6
R10
R11
R12
R13
0
14
-
tEHEL
tELTV
tEHTZ
-
CE# Low to WAIT Valid
11
11
6
CE# High to WAIT High-Z
-
5,6
Latching Specifications
R101
R102
R103
R104
R105
R106
R108
tAVVH
tELVH
tVLQV
tVLVH
tVHVL
tVHAX
tAPA
Address Setup to ADV# High
CE# Low to ADV# High
7
10
-
-
-
ns
ns
ns
ns
ns
ns
ns
ADV# Low to Output Valid
ADV# Pulse Width Low
60
-
7,8
3
7
ADV# Pulse Width High
7
-
Address Hold from ADV# High
Page Address Access Time
7
-
-
20
Clock Specifications
R200
R201
R202
R203
fCLK
CLK Frequency
-
15
3.5
-
66
-
MHz
ns
tCLK
CLK Period
tCH/L
tCHCL
CLK High or Low Time
CLK Fall or Rise Time
-
ns
3
ns
Datasheet
26
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 13: Read Operations — 90 nm (Sheet 2 of 2)
VCCQ
=
1.7 V – 1.95 V
#
Symbol
Parameter (1,2)
Unit
Notes
Min
Max
Synchronous Specifications
R301
R302
R303
R304
R305
R306
R307
tAVCH
tVLCH
tELCH
tCHQV
tCHQX
tCHAX
tCHTV
Address Valid Setup to CLK
7
7
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
ADV# Low Setup to CLK
CE# Low Setup to CLK
CLK to Output Valid
-
11
-
8
Output Hold from CLK
Address Hold from CLK
CLK to WAIT Valid
3
7
-
-
3
8
11
Notes:
1.
See Figure 20, “AC Input/Output Reference Waveform” on page 44 for timing measurements and
maximum allowable input slew rate.
2.
3.
4.
5.
6.
7.
AC specifications assume the data bus voltage is less than or equal to VCCQ when a read operation is initiated.
Address hold in synchronous-burst mode is defined as tCHAX or tVHAX, whichever timing specification is satisfied first.
OE# may be delayed by up to tELQV– tGLQV after the falling edge of CE# without impact to tELQV
.
Sampled, not 100% tested.
Applies only to subsequent synchronous reads.
During the initial access of a synchronous burst read, data from the first word may begin to be driven onto the data bus as
early as the first clock edge after tAVQV
.
8.
All the preceding specifications apply to all densities.
Table 14: Read Operations — 130 nm (Sheet 1 of 2)
VCCQ
=
1.7 V – 2.24 V
#
Parameter (1,2)
Unit
Notes
-60
Min
Max
Asynchronous Specifications
R1
tAVAV
tAVQV
tELQV
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
Read Cycle Time
60
-
-
60
60
20
150
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7,8
7,8
7,8
4
R2
Address to Output Valid
CE# Low to Output Valid
OE# Low to Output Valid
RST# High to Output Valid
CE# Low to Output Low-Z
OE# Low to Output Low-Z
CE# High to Output High-Z
OE# High to Output High-Z
CE# (OE#) High to Output Low-Z
CE# Pulse Width High
R3
-
R4
-
R5
-
R6
0
0
-
5
4,5
5
R7
-
R8
14
14
-
R9
-
4,5
4,5
6
R10
R11
R12
R13
0
-
tEHEL
tELTV
tEHTZ
14
11
-
CE# Low to WAIT Valid
-
5,6
6
CE# High to WAIT High-Z
14
Latching Specifications
November 2007
Order Number: 290701-18
Datasheet
27
Numonyx™ Wireless Flash Memory (W18)
Table 14: Read Operations — 130 nm (Sheet 2 of 2)
VCCQ
=
1.7 V – 2.24 V
#
Parameter (1,2)
Unit
Notes
-60
Min
Max
R101
tAVVH
tELVH
tVLQV
tVLVH
tVHVL
tVHAX
tAPA
Address Setup to ADV# High
7
10
-
-
-
ns
ns
ns
ns
ns
ns
ns
R102
R103
R104
R105
R106
R108
CE# Low to ADV# High
ADV# Low to Output Valid
ADV# Pulse Width Low
60
-
7,8
3
7
ADV# Pulse Width High
Address Hold from ADV# High
Page Address Access Time
7
-
7
-
-
20
Clock Specifications
R200
R201
R202
R203
fCLK
CLK Frequency
-
15
3.5
-
66
-
MHz
ns
tCLK
CLK Period
tCH/L
tCHCL
CLK High or Low Time
CLK Fall or Rise Time
-
ns
3
ns
Synchronous Specifications
R301
R302
R303
R304
R305
R306
R307
tAVCH
tVLCH
tELCH
tCHQV
tCHQX
tCHAX
tCHTV
Address Valid Setup to CLK
ADV# Low Setup to CLK
CE# Low Setup to CLK
CLK to Output Valid
7
7
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
-
11
-
8
Output Hold from CLK
Address Hold from CLK
CLK to WAIT Valid
3
7
-
-
3
8
11
Note: For all numbered note references in this table, refer to the notes in Table 13, “Read Operations — 90 nm” on
page 26.
Datasheet
28
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 6: Asynchronous Read Operation Waveform
R1
VIH
Valid
Address [A]
Address
VIL
R2
VIH
CE# [E]
VIL
R3
R8
R9
VIH
VIL
R4
OE# [G]
R7
VIH
VIL
WE# [W]
WAIT [T]
VOH
VOL
High Z
High Z
Note 1
VOH
VOL
High Z
Valid
Output
Data [D/Q]
RST# [P]
R5
R10
VIH
VIL
Notes:
1.
2.
WAIT shown asserted (RCR[10]=0)
ADV# assumed to be driven to VIL in this waveform
November 2007
Order Number: 290701-18
Datasheet
29
Numonyx™ Wireless Flash Memory (W18)
Figure 7: Latched Asynchronous Read Operation Waveform
R1
VIH
VIL
Valid
Address
Valid
Address
A[MAX:2] [A]
A[1:0] [A]
VIH
VIL
Valid
Address
Valid
Address
R2
R101
R104
R102
R105
VIH
R106
R103
ADV# [V]
CE# [E]
VIL
VIH
VIL
R3
R6
R4
R8
R9
VIH
VIL
OE# [G]
WE# [W]
Data [Q]
RST# [P]
R7
VIH
VIL
VOH
VOL
High Z
Valid
Output
R5
R10
VIH
VIL
Datasheet
30
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 8: Page-Mode Read Operation Waveform
R1
VIH
Valid
A[MAX:2] [A]
Address
VIL
R2
VIH
Valid
Valid
Valid
Valid
A[1:0] [A]
Address
Address
Address
Address
VIL
R101
R105
VIH
R106
R103
ADV# [V]
CE# [E]
OE# [G]
VIL
R104
R102
VIH
VIL
R3
R6
R4
R8
R9
VIH
VIL
R7
VIH
WE# [W]
WAIT [T]
VIL
VOH
High Z
High Z
R108
Note 1
VOL
VOH
VOL
High Z
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Data [D/Q]
RST# [P]
R5
R10
VIH
VIL
Note: WAIT shown asserted (RCR[10] = 0).
November 2007
Order Number: 290701-18
Datasheet
31
Numonyx™ Wireless Flash Memory (W18)
Figure 9: Single Synchronous Read-Array Operation Waveform
R13
R12
Notes:
1.
Section 14.2, “First Access Latency Count (RCR[13:11])” on page 79 describes how to insert clock
cycles during the initial access.
2.
3.
WAIT (shown asserted; RCR[10]=0) can be configured to assert either during, or one data cycle before, valid data.
This waveform illustrates the case in which an x-word burst is initiated to the main array and it is terminated by a CE# de-
assertion after the first word in the burst. If this access had been done to Status, ID, or Query reads, the asserted (low)
WAIT signal would have remained asserted (low) as long as CE# is asserted (low).
Datasheet
32
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 10: Synchronous 4-Word Burst Read Operation Waveform
R11
R13
R12
Notes:
1.
Section 14.2, “First Access Latency Count (RCR[13:11])” on page 79 describes how to insert clock
cycles during the initial access.
2.
WAIT (shown asserted; RCR[10] = 0) can be configured to assert either during, or one data cycle before, valid data.
November 2007
Order Number: 290701-18
Datasheet
33
Numonyx™ Wireless Flash Memory (W18)
Figure 11: WAIT Functionality for EOWL (End-of-Word Line) Condition Waveform
R12
Notes:
1.
Section 14.2, “First Access Latency Count (RCR[13:11])” on page 79 describes how to insert clock
cycles during the initial access.
2.
WAIT (shown asserted; RCR[10]=0) can be configured to assert either during, or one data cycle before, valid data
(assumed wait delay of two clocks, for example).
Datasheet
34
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 12: WAIT Signal in Synchronous Non-Read Array Operation Waveform
R13
R12
Notes:
1.
Section 14.2, “First Access Latency Count (RCR[13:11])” on page 79 describes how to insert clock
cycles during the initial access.
WAIT shown asserted (RCR[10]=0).
2.
November 2007
Order Number: 290701-18
Datasheet
35
Numonyx™ Wireless Flash Memory (W18)
Figure 13: Burst Suspend
R304
R305
R305
R305
CLK
R1
R2
Address [A]
R101
R105
R106
ADV#
CE# [E]
OE# [G]
R3
R8
R9
R4
R9
R4
R13
R12
WAIT [T]
WE# [W]
R7
R6
R304
Q1
R304
Q2
DATA [D/Q]
Q0
Q1
Note: During Burst Suspend, Clock signal can be held high or low.
7.1
AC Write Characteristics
Table 15: AC Write Characteristics — 90 nm (Sheet 1 of 2)
VCCQ
=
1.7 V – 1.95 V
#
Sym
Parameter (1,2)
Unit
Notes
Min
Max
W1
W2
tPHWL (tPHEL
)
RST# High Recovery to WE# (CE#) Low
CE# (WE#) Setup to WE# (CE#) Low
WE# (CE#) Write Pulse Width Low
Data Setup to WE# (CE#) High
Address Setup to WE# (CE#) High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
150
0
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
4
tELWL (tWLEL
)
W3
tWLWH (tELEH
)
40
40
40
0
W4
t
DVWH (tDVEH
)
W5
t
AVWH (tAVEH
)
W6
tWHEH (tEHWH)
W7
t
WHDX (tEHDX
)
)
)
0
W8
t
WHAX (tEHAX
tWHWL (tEHEL
tVPWH (tVPEH
tQVVL
0
W9
20
200
0
5,6,7
3
W10
W11
W12
)
VPP Setup to WE# (CE#) High
VPP Hold from Valid SRD
3,8
3,8
tQVBL
WP# Hold from Valid SRD
0
Datasheet
36
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 15: AC Write Characteristics — 90 nm (Sheet 2 of 2)
VCCQ
=
1.7 V – 1.95 V
#
Sym
Parameter (1,2)
Unit
Notes
Min
Max
W13
W14
W16
W18
W19
W20
W21
W22
W27
W28
tBHWH (tBHEH
)
WP# Setup to WE# (CE#) High
Write Recovery before Read
WE# High to Valid Data
WE# High to Address Valid
WE# High to CLK Valid
WE# High to ADV# High
ADV# High to WE# Low
CLK to WE# Low
200
-
ns
ns
ns
ns
ns
ns
ns
ns
3
tWHGL (tEHGL
tWHQV
tWHAV
)
0
-
tAVQV +20
-
-
3,6,10
3,9,10
3,10
3,10
11
0
tWHCV
12
12
-
tWHVH
tVHWL
-
<21
<21
tCHWL
11
tWHEL
WE# High to CE# Low
WE# High to ADV# Low
0
0
tWHVL
Notes:
1.
2.
3.
4.
Write timing characteristics during erase suspend are the same as during write-only operations.
A write operation can be terminated with either CE# or WE#.
Sampled, not 100% tested.
Write pulse width low (tWLWH or tELEH) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high
(whichever occurs first). Hence, tWLWH = tELEH = tWLEH = tELWH
Write pulse width high (tWHWL or tEHEL) is defined from CE# or WE# high (whichever is first) to CE# or WE# low
(whichever is last). Hence, tWLWH = tEHEL = tWHEL = tEHWL
.
5.
6.
.
System designers should take this into account and may insert a software No-Op instruction to delay the first read after
issuing a command.
7.
For commands other than resume commands.
VPP should be held at VPP1 or VPP2 until block erase or program success is determined.
Applicable during asynchronous reads following a write.
tWHCH/L OR tWHVH must be met when transitioning from a write cycle to a synchronous burst read. tWHCH/L and tWHVH both
refer to the address latching event (either the rising/falling clock edge or the rising ADV# edge, whichever occurs first).
The specifications tVHWL and tCHWL can be ignored if there is no clock toggling during the write bus cycle.
8.
9.
10.
11.
Table 16: AC Write Characteristics — 130 nm (Sheet 1 of 2)
VCCQ
=
1.7 V – 2.24 V
#
Sym
Parameter (1,2)
Unit
Notes
-60
Min
Max
W1
W2
t
PHWL (tPHEL
)
)
RST# High Recovery to WE# (CE#) Low
CE# (WE#) Setup to WE# (CE#) Low
WE# (CE#) Write Pulse Width Low
Data Setup to WE# (CE#) High
Address Setup to WE# (CE#) High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
150
0
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
4
t
ELWL (tWLEL
W3
tWLWH (tELEH
tDVWH (tDVEH
AVWH (tAVEH
WHEH (tEHWH
)
40
40
40
0
W4
)
W5
t
)
W6
t
)
)
W7
tWHDX (tEHDX
tWHAX (tEHAX
tWHWL (tEHEL
tVPWH (tVPEH
tQVVL
0
W8
)
)
0
W9
20
200
0
5,6,7
3
W10
W11
W12
)
VPP Setup to WE# (CE#) High
VPP Hold from Valid SRD
3,8
3,8
tQVBL
WP# Hold from Valid SRD
0
November 2007
Order Number: 290701-18
Datasheet
37
Numonyx™ Wireless Flash Memory (W18)
Table 16: AC Write Characteristics — 130 nm (Sheet 2 of 2)
VCCQ
=
1.7 V – 2.24 V
(1,2)
#
Sym
Parameter
Unit
Notes
-60
Min
Max
W13
W14
W16
W18
W19
W20
tBHWH (tBHEH
)
WP# Setup to WE# (CE#) High
Write Recovery before Read
WE# High to Valid Data
200
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
3
t
WHGL (tEHGL
)
0
tWHQV
tWHAV
tWHCV
tWHVH
tAVQV +20
3,6,10
3,9,10
3,10
WE# High to Address Valid
WE# High to CLK Valid
0
12
12
WE# High to ADV# High
3,10
Notes: For all numbered note references in this table, refer to the notes in Table 15, “AC Write Characteristics — 90
nm” on page 36.
Datasheet
38
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 14: Write Operations Waveform
VIH
CLK [C]
VIL
W19
Note 1
Note 2
W5
Note 3
Note 4
W18
Note 5
VIH
VIL
Valid
Address
Valid
Address
Valid
Address
Address [A]
R101
R105
VIH
R106
W8
ADV# [V]
VIL
R104
W2
W20
VIH
VIL
Note 6
CE# (WE#) [E(W)]
OE# [G]
W6
VIH
VIL
W3
W14
W9
VIH
VIL
Note 6
WE# (CE#) [W(E)]
Data [Q]
W1
W7
W16
VIH
VIL
Valid
SRD
Data In
Data In
W4
VIH
VIL
RST# [P]
W12
W11
W13
W10
VIH
VIL
WP# [B]
VPPH
VPPLK
VIL
VPP [V]
Notes:
1.
2.
3.
4.
5.
6.
7.
VCC power-up and standby.
Write Program or Erase Setup command.
Write valid address and data (for program) or Erase Confirm command.
Automated program/erase delay.
Read Status Register data (SRD) to determine program/erase operation completion.
OE# and CE# must be asserted and WE# must be deasserted for read operations.
CLK is ignored. (but may be kept active/toggling)
November 2007
Order Number: 290701-18
Datasheet
39
Numonyx™ Wireless Flash Memory (W18)
Figure 15: Asynchronous Read to Write Operation Waveform
R1
R2
W5
W8
Address [A]
CE# [E}
R3
R8
R4
R9
OE# [G]
W3
W2
W6
WE# [W]
R7
R6
W7
R10
W4
Data [D/Q]
RST# [P]
Q
D
R5
Figure 16: Asynchronous Write to Read Operation
W5
W8
R1
Address [A]
CE# [E}
W2
W6
R10
W3
W18
WE# [W]
OE# [G]
W14
R4
W7
R2
R3
R9
W4
R8
Data [D/Q]
RST# [P]
D
Q
W1
Datasheet
40
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 17: Synchronous Read to Write Operation
Latency Count
R301
R302
R306
CLK[C]
R2
W5
R101
W18
Address [A]
R105
R106
R102
R104
W20
AD V# [V]
R303
R3
R11
W6
CE# [E]
R4
R8
OE# [G]
W15
W19
W9
W8
W3
W2
WE#
R12
R307
R304
WAIT [T]
R13
R7
R305
W7
Data [D/Q]
Q
D
D
November 2007
Order Number: 290701-18
Datasheet
41
Numonyx™ Wireless Flash Memory (W18)
Figure 18: Synchronous Write To Read Operation
Latency Count
R2
R302
R301
CLK
W5
W8
R306
R106
Address [A]
ADV#
W20
R104
W6
R303
W2
R11
CE# [E}
W18
W19
W3
WE# [W]
OE# [G]
WAIT [T]
R4
R12
R307
W7
R304
R304
R305
W4
R3
Data [D/Q]
RST# [P]
D
Q
Q
W1
7.2
Erase and Program Times
Note:
Specifications are for 130 nm and 90 nm devices unless otherwise stated.
Table 17: Erase and Program Times (Sheet 1 of 2)
VPP1
VPP2
Operation
Symbol
Parameter
Description (1)
Notes
Unit
Typ
Max
Typ
Max
Erasing and Suspending
W500
Erase Time
tERS/PB
tERS/MB
tSUSP/P
tSUSP/E
4-Kword Parameter Block
32-Kword Main Block
Program Suspend
2,3
2,3
2
0.3
0.7
5
2.5
4
0.25
0.4
5
2.5
4
s
s
W501
W600
10
20
10
20
µs
µs
Suspend
Latency
W601
Erase Suspend
2
5
5
Programming
W200
tPROG/W
tPROG/PB
tPROG/MB
Single Word
2
12
0.05
0.4
150
.23
1.8
8
130
0.07
0.6
µs
s
Program
Time
W201
4-Kword Parameter Block
32-Kword Main Block
2,3
2,3
0.03
0.24
W202
s
Enhanced Factory Programming (5)
Datasheet
42
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 17: Erase and Program Times (Sheet 2 of 2)
VPP1
VPP2
Operation
Symbol
Parameter
Description (1)
Notes
Unit
Typ
Max
Typ
Max
W400
W401
W402
W403
W404
W405
tEFP/W
Single Word
4
N/A
N/A
N/A
-
N/A
-
3.1
15
16
-
µs
ms
ms
µs
Program
tEFP/PB
tEFP/MB
tEFP/SETUP
tEFP/TRAN
tEFP/VERIFY
4-Kword Parameter Block
32-Kword Main Block
EFP Setup
2,3
2,3
-
120
-
-
N/A
N/A
N/A
5
Operation
Latency
Program to Verify Transition
Verify
N/A
N/A
2.7
1.7
5.6
130
µs
µs
Notes:
1.
Unless noted otherwise, all parameters are measured at TA = +25 °C and nominal voltages, and they are sampled, not
100% tested.
2.
3.
4.
Excludes external system-level overhead.
Exact results may vary based on system overhead.
W400-Typ is the calculated delay for a single programming pulse. W400-Max includes the delay when programming
within a new word-line.
5.
Some EFP performance degradation may occur if block cycling exceeds 10.
7.3
Reset Specifications
Note:
Specifications are for 130 nm and 90 nm devices unless otherwise stated.
Table 18: Reset Specifications
#
Symbol
tPLPH
Parameter (1)
Notes
Min
Max
Unit
P1
RST# Low to Reset during Read
RST# Low to Reset during Block Erase
RST# Low to Reset during Program
VCC Power Valid to Reset
1, 2, 3, 4
1, 3, 4, 5
1, 3, 4, 5
1,3,4,5,6
100
-
-
ns
µs
µs
µs
20
10
-
P2
P3
tPLRH
-
tVCCPH
60
Notes:
1.
2.
3.
4.
5.
6.
These specifications are valid for all product versions (packages and speeds).
The device may reset if tPLPH< tPLPHMin, but this is not guaranteed.
Not applicable if RST# is tied to VCC.
Sampled, but not 100% tested.
If RST# is tied to VCC, the device is not ready until tVCCPH occurs after when VCC ≥ VCCMin.
If RST# is tied to any supply/signal with VCCQ voltage levels, the RST# input voltage must not exceed VCC until VCC
VCCMin.
≥
November 2007
Order Number: 290701-18
Datasheet
43
Numonyx™ Wireless Flash Memory (W18)
Figure 19: Reset Operations Waveforms
P1
P2
P2
P3
R5
VIH
VIL
(
A) Reset during
RST# [P]
RST# [P]
RST# [P]
VCC
read mode
Abort
Complete
R5
(B) Reset during
VIH
VIL
program or block erase
P1
≤ P2
Abort
Complete
R5
(C) Reset during
VIH
VIL
program or block erase
P1
≥ P2
VCC
0V
(D) VCC Power-up to
RST# high
7.4
AC I/O Test Conditions
Figure 20: AC Input/Output Reference Waveform
VCCQ
Test Points
Input
VCCQ/2
VCCQ/2
Output
0V
Note: Input timing begins, and output timing ends, at VCCQ/2. Input rise and fall times (10% to 90%) < 5 ns. Worst case speed
conditions are when VCC = VCCMin.
Figure 21: Transient Equivalent Testing Load Circuit
VCCQ
R1
Device
Under Test
Out
CL
R2
Note: See Table 18 on page 43 for component values.
Datasheet
44
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 19: Test Configuration Component Values for Worst Case Speed Conditions
Test Configuration
CL (pF)
R1 (kΩ)
R2 (kΩ)
VCCQMin (1.7 V) Standard Test
30
16.7
16.7
Note: CL includes jig capacitance.
Figure 22: Clock Input AC Waveform
R201
VIH
CLK [C]
VIL
R202
R203
7.5
Device Capacitance
TA = +25 °C, f = 1 MHz
Table 20: Capacitance
Symbol
Parameter§
Typ
Max
Unit
Condition
CIN
COUT
CCE
Input Capacitance
Output Capacitance
CE# Input Capacitance
6
8
8
pF
pF
pF
VIN = 0.0 V
VOUT = 0.0 V
VIN = 0.0 V
12
12
10
§Sampled, not 100% tested.
November 2007
Order Number: 290701-18
Datasheet
45
Numonyx™ Wireless Flash Memory (W18)
8.0
Power and Reset Specifications
Numonyx™ Wireless Flash Memory (W18) devices have a layered approach to power
savings that can significantly reduce overall system power consumption. The APS
feature reduces power consumption when the device is selected but idle. If CE# is
deasserted, the memory enters its standby mode, where current consumption is even
lower. Asserting RST# provides current savings similar to standby mode. The
combination of these features can minimize memory power consumption, and
therefore, overall system power consumption.
8.1
8.2
Active Power
With CE# at VIL and RST# at VIH, the device is in the active mode. Refer to Section 6.1,
“DC Current Characteristics” on page 23, for ICC values. When the device is in “active”
state, it consumes the most power from the system. Minimizing device active current
therefore reduces system power consumption, especially in battery-powered
applications.
Automatic Power Savings (APS)
Automatic Power Saving (APS) provides low-power operation during a read’s active
state. During APS mode, ICCAPS is the average current measured over any 5 ms time
interval 5 µs after the following events happen:
• There is no internal sense activity;
• CE# is asserted;
• The address lines are quiescent, and at VSSQ or VCCQ
.
OE# may be asserted during APS.
8.3
Standby Power
With CE# at VIH and the device in read mode, the flash memory is in standby mode,
which disables most device circuitry and substantially reduces power consumption.
Outputs are placed in a high-impedance state independent of the OE# signal state. If
CE# transitions to VIH during erase or program operations, the device continues the
operation and consumes corresponding active power until the operation is complete.
ICCS is the average current measured over any 5 ms time interval 5 µs after a CE# de-
assertion.
8.4
Power-Up/Down Characteristics
The device is protected against accidental block erasure or programming during power
transitions. Power supply sequencing is not required if VCC, VCCQ, and VPP are
connected together; so it doesn’t matter whether VPP or VCC powers-up first. If VCCQ
and/or VPP are not connected to the system supply, then VCC should attain VCCMIN
before applying VCCQ and VPP. Device inputs should not be driven before supply
voltage = VCCMIN. Power supply transitions should only occur when RST# is low.
8.4.1
System Reset and RST#
The use of RST# during system reset is important with automated program/erase
devices because the system expects to read from the flash memory when it comes out
of reset. If a CPU reset occurs without a flash memory reset, proper CPU initialization
Datasheet
46
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
will not occur because the flash memory may be providing status information instead of
array data. To allow proper CPU/flash initialization at system reset, connect RST# to
the system CPU RESET# signal.
System designers must guard against spurious writes when VCC voltages are above
VLKO. Because both WE# and CE# must be low for a command write, driving either
signal to VIH inhibits writes to the device. The CUI architecture provides additional
protection because alteration of memory contents can only occur after successful
completion of the two-step command sequences. The device is also disabled until RST#
is brought to VIH, regardless of its control input states. By holding the device in reset
(RST# connected to system PowerGood) during power-up/down, invalid bus conditions
during power-up can be masked, providing yet another level of memory protection.
8.4.2
8.5
VCC, VPP, and RST# Transitions
The CUI latches commands issued by system software and is not altered by VPP or CE#
transitions or WSM actions. Read-array mode is its power-up default state after exit
from reset mode or after VCC transitions above VLKO (Lockout voltage). After
completing program or block erase operations (even after VPP transitions below VPPLK),
the Read Array command must reset the CUI to read-array mode if flash memory array
access is desired.
Power Supply Decoupling
When the device is accessed, many internal conditions change. Circuits are enabled to
charge pumps and switch voltages. This internal activity produces transient noise. To
minimize the effect of this transient noise, device decoupling capacitors are required.
Transient current magnitudes depend on the device outputs’ capacitive and inductive
loading. Two-line control and proper decoupling capacitor selection suppresses these
transient voltage peaks. Each flash device should have a 0.1 µF ceramic capacitor
connected between each power (VCC, VCCQ, VPP), and ground (VSS, VSSQ) signal.
High-frequency, inherently low-inductance capacitors should be as close as possible to
package signals.
November 2007
Order Number: 290701-18
Datasheet
47
Numonyx™ Wireless Flash Memory (W18)
9.0
Bus Operations Overview
This section provides an overview of device bus operations. The Numonyx™ Wireless
Flash Memory (W18) family includes an on-chip WSM to manage block erase and
program algorithms. Its Command User Interface (CUI) allows minimal processor
overhead with RAM-like interface timings. Device commands are written to the CUI
using standard microprocessor timings.
9.1
Bus Operations
Bus cycles to/from the W18 device conform to standard microprocessor bus operations.
Table 21 summarizes the bus operations and the logic levels that must be applied to
the device’s control signal inputs.
Table 21: Bus Operations Summary
DQ[15:0
]
Bus Operation
RST#
CLK
ADV#
CE#
OE#
WE#
WAIT
Notes
Asynchronous
Synchronous
Burst Suspend
VIH
VIH
VIH
VIH
VIH
VIH
VIL
X
L
L
L
L
L
L
H
H
H
L
Output
Output
Output
Input
Asserted
Driven
Read
Write
Running
1
Halted
X
L
L
H
H
H
X
X
Active
Asserted
Asserted
High-Z
X
X
X
X
L
2
3
Output Disable
Standby
Reset
X
X
X
L
H
X
X
High-Z
High-Z
High-Z
H
X
3
High-Z
3,4
Notes:
1.
2.
WAIT is only valid during synchronous array-read operations.
Refer to the Table 23, “Bus Cycle Definitions” on page 52 for valid DQ[15:0] during a write
operation.
3.
4.
X = Don’t Care (H or L).
RST# must be at VSS ± 0.2 V to meet the maximum specified power-down current.
9.1.1
Reads
Device read operations are performed by placing the desired address on A[22:0] and
asserting CE# and OE#. ADV# must be low, and WE# and RST# must be high. All read
operations are independent of the voltage level on VPP.
CE#-low selects the device and enables its internal circuits. OE#-low or WE#-low
determine whether DQ[15:0] are outputs or inputs, respectively. OE# and WE# must
not be low at the same time - indeterminate device operation will result.
In asynchronous-page mode, the rising edge of ADV# can be used to latch the address.
If only asynchronous read mode is used, ADV# can be tied to ground. CLK is not used
in asynchronous-page mode and should be tied high.
In synchronous-burst mode, ADV# is used to latch the initial address - either on the
rising edge of ADV# or the rising (or falling) edge of CLK with ADV# low, whichever
occurs first. CLK is used in synchronous-burst mode to increment the internal address
counter, and to output read data on DQ[15:0].
Each device partition can be placed in any of several read states:
• Read Array: Returns flash array data from the addressed location.
• Read Identifier (ID): Returns manufacturer ID and device ID codes, block lock
status, and protection register data. Read Identifier information can be accessed
from any 4-Mbit partition base address.
Datasheet
48
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
• CFI Query: Returns Common Flash Interface (CFI) information. CFI information
can be accessed starting at 4-Mbit partition base addresses.
• Read Status Register: Returns Status Register (SR) data from the addressed
partition.
The appropriate CUI command must be written to the partition in order to place it in
the desired read state (see Table 22, “Command Codes and Descriptions” on page 51).
Non-array read operations (Read ID, CFI Query, and Read Status Register) execute as
single synchronous or asynchronous read cycles. WAIT is asserted throughout non-
array read operations.
9.1.2
Writes
Device write operations are performed by placing the desired address on A[22:0] and
asserting CE# and WE#. OE# and RST# must be high. Data to be written at the
desired address is placed on DQ[15:0]. ADV# must be held low throughout the write
cycle or it can be toggled to latch the address. If ADV# is held low, the address and
data are latched on the rising edge of WE#. CLK is not used during write operations,
and is ignored; it can be either free-running or halted at VIL or VIH. All write operations
are asynchronous.
Table 22, “Command Codes and Descriptions” on page 51 shows the available device
commands. Appendix A, “Write State Machine States” on page 86 provides information
on moving between different device operations by using CUI commands.
9.1.3
9.1.4
Output Disable
When OE# is deasserted, device outputs DQ[15:0] are disabled and placed in a high-
impedance (High-Z) state.
Burst Suspend
The Burst Suspend feature allows the system to temporarily suspend a synchronous-
burst read operation. This can be useful if the system needs to access another device
on the same address and data bus as the flash during a burst-read operation.
Synchronous-burst accesses can be suspended during the initial latency (before data is
received) or after the device has output data. When a burst access is suspended,
internal array sensing continues and any previously latched internal data is retained.
Burst Suspend occurs when CE# is asserted, the current address has been latched
(either ADV# rising edge or valid CLK edge), CLK is halted, and OE# is deasserted. CLK
can be halted when it is at VIH or VIL. To resume the burst access, OE# is reasserted
and CLK is restarted. Subsequent CLK edges resume the burst sequence where it left
off.
Within the device, CE# gates WAIT. Therefore, during Burst Suspend WAIT is still
driven. This can cause contention with another device attempting to control the
system’s READY signal during a Burst Suspend. Systems using the Burst Suspend
feature should not connect the device’s WAIT signal directly to the system’s READY
signal. Refer to Figure 13, “Burst Suspend” on page 36.
November 2007
Order Number: 290701-18
Datasheet
49
Numonyx™ Wireless Flash Memory (W18)
9.1.5
9.1.6
Standby
De-asserting CE# deselects the device and places it in standby mode, substantially
reducing device power consumption. In standby mode, outputs are placed in a high-
impedance state independent of OE#. If deselected during a program or erase
algorithm, the device shall consume active power until the program or erase operation
completes.
Reset
The device enters a reset mode when RST# is asserted. In reset mode, internal
circuitry is turned off and outputs are placed in a high-impedance state.
After returning from reset, a time tPHQV is required until outputs are valid, and a delay
(tPHWV) is required before a write sequence can be initiated. After this wake-up
interval, normal operation is restored. The device defaults to read-array mode, the
Status Register is set to 80h, and the Configuration Register defaults to asynchronous
page-mode reads.
If RST# is asserted during an erase or program operation, the operation aborts and the
memory contents at the aborted block or address are invalid. See Figure 19, “Reset
Operations Waveforms” on page 44 for detailed information regarding reset timings.
Like any automated device, it is important to assert RST# during system reset. When
the system comes out of reset, the processor expects to read from the flash memory
array. Automated flash memories provide status information when read during program
or erase operations. If a CPU reset occurs with no flash memory reset, proper CPU
initialization may not occur because the flash memory may be providing status
information instead of array data. Numonyx flash memories allow proper CPU
initialization following a system reset through the use of the RST# input. In this
application, RST# is controlled by the same CPU reset signal.
9.2
Device Commands
The device’s on-chip WSM manages erase and program algorithms. This local CPU
(WSM) controls the device’s in-system read, program, and erase operations. Bus cycles
to or from the flash memory conform to standard microprocessor bus cycles. RST#,
CE#, OE#, WE#, and ADV# control signals dictate data flow into and out of the device.
WAIT informs the CPU of valid data during burst reads. Table 21, “Bus Operations
Summary” on page 48 summarizes bus operations.
Device operations are selected by writing specific commands into the device’s CUI.
Table 22, “Command Codes and Descriptions” on page 51 lists all possible command
codes and descriptions. Table 23, “Bus Cycle Definitions” on page 52 lists command
definitions. Because commands are partition-specific, it is important to issue write
commands within the target address range.
Datasheet
50
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 22: Command Codes and Descriptions (Sheet 1 of 2)
Device
Command
Operation
Code
Description
FFh
Read Array
Places selected partition in Read Array mode.
Places selected partition in Status Register read mode. After issuing this
command, reading from the partition outputs SR data on DQ[15:0]. A partition
automatically enters this mode after issuing the Program or Erase command.
Read Status
Register
70h
Places the selected partition in Read ID mode. Device reads from partition
addresses output manufacturer/device codes, Configuration Register data, block
lock status, or protection register data on DQ[15:0].
Read
90h
98h
50h
Read
Identifier
Puts the addressed partition in CFI Query mode. Device reads from the partition
addresses output CFI information on DQ[7:0].
CFI Query
The WSM can set the Status Register’s block lock (SR[1]), VPP (SR[3]), program
(SR[4]), and erase (SR[5]) status bits, but it cannot clear them. SR[5:3,1] can
only be cleared by a device reset or through the Clear Status Register command.
Clear Status
Register
This preferred program command’s first cycle prepares the CUI for a program
operation. The second cycle latches address and data, and executes the WSM
program algorithm at this location. Status register updates occur when CE# or
OE# is toggled. A Read Array command is required to read array data after
programming.
Word Program
Setup
40h
Alternate
Setup
10h
30h
D0h
20h
Equivalent to a Program Setup command (40h).
Program
This program command activates EFP mode. The first write cycle sets up the
command. If the second cycle is an EFP Confirm command (D0h), subsequent
writes provide program data. All other commands are ignored after EFP mode
begins.
EFP Setup
If the first command was EFP Setup (30h), the CUI latches the address and data,
and prepares the device for EFP mode.
EFP Confirm
Erase Setup
This command prepares the CUI for Block Erase. The device erases the block
addressed by the Erase Confirm command. If the next command is not Erase
Confirm, the CUI sets Status Register bits SR[5:4] to indicate command
sequence error and places the partition in the read Status Register mode.
Erase
If the first command was Erase Setup (20h), the CUI latches address and data,
and erases the block indicated by the erase confirm cycle address. During
D0h
B0h
Erase Confirm program or erase, the partition responds only to Read Status Register, Program
Suspend, and Erase Suspend commands. CE# or OE# toggle updates Status
Register data.
This command, issued at any device address, suspends the currently executing
Program
program or erase operation. Status register data indicates the operation was
Suspend or
successfully suspended if SR[2] (program suspend) or SR[6] (erase suspend)
and SR[7] are set. The WSM remains in the suspended state regardless of
Erase
Suspend
Suspend
control signal states (except RST#).
Suspend
Resume
This command, issued at any device address, resumes the suspended program
or erase operation.
D0h
60h
01h
D0h
2Fh
This command prepares the CUI lock configuration. If the next command is not
Lock Block, Unlock Block, or Lock-Down, the CUI sets SR[5:4] to indicate
command sequence error.
Lock Setup
Lock Block
Unlock Block
Lock-Down
If the previous command was Lock Setup (60h), the CUI locks the addressed
block.
Block Locking
If the previous command was Lock Setup (60h), the CUI latches the address and
unlocks the addressed block. If previously locked-down, the operation has no
effect.
If the previous command was Lock Setup (60h), the CUI latches the address and
locks-down the addressed block.
November 2007
Order Number: 290701-18
Datasheet
51
Numonyx™ Wireless Flash Memory (W18)
Table 22: Command Codes and Descriptions (Sheet 2 of 2)
Device
Command
Operation
Code
Description
This command prepares the CUI for a protection register program operation. The
second cycle latches address and data, and starts the WSM’s protection register
program or lock algorithm. Toggling CE# or OE# updates the flash Status
Register data. To read array data after programming, issue a Read Array
command.
Protection
Program
Setup
Protection
C0h
This command prepares the CUI for device configuration. If Set Configuration
Register is not the next command, the CUI sets SR[5:4] to indicate command
sequence error.
Configuration
Setup
60h
03h
Configuration
Set
If the previous command was Configuration Setup (60h), the CUI latches the
address and writes the data from A[15:0] into the configuration register.
Subsequent read operations access array data.
Configuration
Register
Note: Do not use unassigned commands. Numonyx reserves the right to redefine these codes for future functions.
Table 23: Bus Cycle Definitions
First Bus Cycle
Second Bus Cycle
Bus
Operation
Command
Cycles
Oper
Addr1
Data2,3
Oper
Addr1
Data2,3
Read
Address
Array
Data
Read Array/Reset
≥1
Write
PnA
FFh
Read
Read Identifier
CFI Query
≥ 2
≥ 2
2
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
PnA
PnA
PnA
XX
90h
98h
Read
Read
Read
PBA+IA
PBA+QA
PnA
IC
QD
Read
Read Status Register
Clear Status Register
Block Erase
70h
SRD
1
50h
2
BA
20h
Write
Write
Write
BA
WA
WA
D0h
WD
Word Program
EFP
2
WA
WA
XX
40h/10h
30h
Program
and
Erase
>2
1
D0h
Program/Erase Suspend
Program/Erase Resume
Lock Block
B0h
1
XX
D0h
60h
2
BA
Write
Write
Write
BA
BA
BA
01h
D0h
2Fh
Lock
Unlock Block
2
BA
60h
Lock-Down Block
2
BA
60h
Datasheet
52
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 23: Bus Cycle Definitions
First Bus Cycle
Addr1
Second Bus Cycle
Bus
Cycles
Operation
Command
Oper
Data2,3
Oper
Addr1
Data2,3
Protection Program
2
2
2
Write
PA
LPA
CD
C0h
Write
Write
Write
PA
PD
FFFDh
03h
Protection
Lock Protection Program
Set Configuration Register
Write
Write
C0h
60h
LPA
CD
Configuration
Notes:
1.
First-cycle command addresses should be the same as the operation’s target address. Examples: the first-cycle address
for the Read Identifier command should be the same as the Identification code address (IA); the first-cycle address for
the Word Program command should be the same as the word address (WA) to be programmed; the first-cycle address
for the Erase/Program Suspend command should be the same as the address within the block to be suspended; etc.
XX = Any valid address within the device.
IA = Identification code address.
BA = Block Address. Any address within a specific block.
LPA = Lock Protection Address is obtained from the CFI (through the CFI Query command). The Numonyx Wireless
Flash Memory (W18) family’s LPA is at 0080h.
PA = User programmable 4-word protection address.
PnA = Any address within a specific partition.
PBA = Partition Base Address. The very first address of a particular partition.
QA = CFI code address.
WA = Word address of memory location to be written.
SRD = Status register data.
WD = Data to be written at location WA.
2.
IC = Identifier code data.
PD = User programmable 4-word protection data.
QD = Query code data on DQ[7:0].
CD = Configuration register code data presented on device addresses A[15:0]. A[MAX:16] address bits can select any
partition. See Table 31, “Read Configuration Register Descriptions” on page 78 for Configuration
Register bits descriptions.
Commands other than those shown above are reserved by Numonyx for future device implementations and should not
be used.
3.
9.3
Command Sequencing
When issuing a 2-cycle write sequence to the flash device, a read operation is allowed
to occur between the two write cycles. The setup phase of a 2-cycle write sequence
places the addressed partition into read-status mode, so if the same partition is read
before the second “confirm” write cycle is issued, Status Register data will be returned.
Reads from other partitions, however, can return actual array data assuming the
addressed partition is already in read-array mode. Figure 23 and Figure 24 illustrate
these two conditions.
November 2007
Order Number: 290701-18
Datasheet
53
Numonyx™ Wireless Flash Memory (W18)
Figure 23: Normal Write and Read Cycles
Address [A]
WE# [W]
OE# [G]
Partition A
Partition A
Partition A
Data [Q]
20h
Block Erase Setup
D0h
Block Erase Confirm
FFh
Read Array
Figure 24: Interleaving a 2-Cycle Write Sequence with an Array Read
Address [A]
WE# [W]
OE# [G]
Partition B
Partition A
Partition B
Partition A
Data [Q]
FFh
Read Array
20h
Erase Setup
Array Data
Bus Read
D0h
Erase Confirm
By contrast, a write bus cycle may not interrupt a 2-cycle write sequence. Doing so
causes a command sequence error to appear in the Status Register. Figure 25
illustrates a command sequence error.
Figure 25: Improper Command Sequencing
Address [A]
Partition X
Partition Y
Partition X
Partition X
WE# [W]
OE# [G]
Data [D/Q]
20h
FFh
D0h
SR Data
Datasheet
54
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
10.0
Read Operations
The device supports two read modes - asynchronous page and synchronous burst
mode. Asynchronous page mode is the default read mode after device power-up or a
reset. The Read Configuration Register (RCR) must be configured to enable
synchronous burst reads of the flash memory array (see Section 14.0, “Set Read
Configuration Register” on page 78).
Each partition of the device can be in any of four read states: Read Array, Read
Identifier, Read Status or CFI Query. Upon power-up, or after a reset, all partitions of
the device default to the Read Array state. To change a partition’s read state, the
appropriate read command must be written to the device (see Section 9.2, “Device
Commands” on page 50).
The following sections describe device read modes and read states in detail.
10.1
Asynchronous Page Read Mode
Following a device power-up or reset, asynchronous page mode is the default read
mode and all partitions are set to Read Array. However, to perform array reads after
any other device operation (e.g. write operation), the Read Array command must be
issued in order to read from the flash memory array.
Note:
Asynchronous page-mode reads can only be performed when Read Configuration
Register bit RCR[15] is set (see Section 14.0, “Set Read Configuration Register” on
page 78).
To perform an asynchronous page mode read, an address is driven onto A[MAX:0], and
CE#, OE# and ADV# are asserted. WE# and RST# must be deasserted. WAIT is
asserted during asynchronous page mode. ADV# can be driven high to latch the
address, or it must be held low throughout the read cycle. CLK is not used for
asynchronous page-mode reads, and is ignored. If only asynchronous reads are to be
performed, CLK should be tied to a valid VIH level, WAIT signal can be floated and
ADV# must be tied to ground. Array data is driven onto DQ[15:0] after an initial access
time tAVQV delay. (see Section 7.0, “AC Characteristics” on page 26).
In asynchronous page mode, four data words are “sensed” simultaneously from the flash
memory array and loaded into an internal page buffer. The buffer word corresponding
to the initial address on A[MAX:0] is driven onto DQ[15:0] after the initial access delay.
Address bits A[MAX:2] select the 4-word page. Address bits A[1:0] determine which
word of the 4-word page is output from the data buffer at any given time.
10.2
Synchronous Burst Read Mode
Read Configuration Register bits RCR[15:0] must be set before synchronous burst
operation can be performed. Synchronous burst mode can be performed for both array
and non-array reads such as Read ID, Read Status or Read Query (See for details).
Synchronous burst mode outputs 4, 8, 16, or . To perform a synchronous burst- read, an
initial address is driven onto A[MAX:0], and CE# and OE# are asserted. WE# and
RST# must be deasserted. ADV# is asserted, and then deasserted to latch the address.
Alternately, ADV# can remain asserted throughout the burst access, in which case the
address is latched on the next valid CLK edge after ADV# is asserted. See Section 14.0,
“Set Read Configuration Register” on page 78
During synchronous array and non-array read modes, the first word is output from the
data buffer on the next valid CLK edge after the initial access latency delay (see Section
14.2, “First Access Latency Count (RCR[13:11])” on page 79). Subsequent data is
November 2007
Order Number: 290701-18
Datasheet
55
Numonyx™ Wireless Flash Memory (W18)
output on valid CLK edges following a minimum delay. However, for a synchronous non-
array read, the same word of data will be output on successive clock edges until the
burst length requirements are satisfied. See During synchronous read operations, WAIT
indicates invalid data when asserted, and valid data when deasserted with respect to a
valid clock edge. See Section 7.0, “AC Characteristics” on page 26 for additional details.
10.3
Read Array
The Read Array command places (or resets) the partition in read-array mode and is
used to read data from the flash memory array. Upon initial device power-up, or after
reset (RST# transitions from VIL to VIH), all partitions default to asynchronous read-
array mode. To read array data from the flash device, first write the Read Array
command (FFh) to the CUI and specify the desired word address. Then read from that
address. If a partition is already in read-array mode, issuing the Read Array command
is not required to read from that partition.
If the Read Array command is written to a partition that is erasing or programming, the
device presents invalid data on the bus until the program or erase operation completes.
After the program or erase finishes in that partition, valid array data can then be read.
If an Erase Suspend or Program Suspend command suspends the WSM, a subsequent
Read Array command places the addressed partition in read-array mode. The Read
Array command functions independently of VPP.
10.4
Read Identifier
The Read Identifier mode outputs the manufacturer/device identifier, block lock status,
protection register codes, and Configuration Register data. The identifier information is
contained within a separate memory space on the device and can be accessed along
the 4-Mbit partition address range supplied by the Read Identifier command (90h)
address. Reads from addresses in Table 24 retrieve ID information. Issuing a Read
Identifier command to a partition that is programming or erasing places that partition’s
outputs in read ID mode while the partition continues to program or erase in the
background.
Table 24: Device Identification Codes (Sheet 1 of 2)
Address1
Item
Data
Description
Base
Offset
Manufacturer ID
Device ID
Partition
00h
0089h
8862h
Numonyx
32-Mbit, Top Parameter Device
32-Mbit, Bottom Parameter Device
64-Mbit, Top Parameter Device
64-Mbit, Bottom Parameter Device
128-Mbit, Top Parameter Device
128-Mbit, Bottom Parameter Device
Block is unlocked
8863h
8864h
Partition
Block
01h
8865h
8866h
8867h
D0 = 0
D0 = 1
D1 = 0
D1 = 1
Register Data
Block Lock Status(2)
02h
Block is locked
Block is not locked-down
Block Lock-Down Status(2)
Configuration Register
Block
02h
05h
Block is locked down
Partition
Datasheet
56
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 24: Device Identification Codes (Sheet 2 of 2)
Address1
Item
Data
Description
Base
Offset
Protection Register Lock Status
Protection Register
Notes:
Partition
80h
Lock Data
Multiple reads required to read the
entire 128-bit Protection Register.
Partition
81h - 88h
Register Data
1.
The address is constructed from a base address plus an offset. For example, to read the Block Lock Status for block
number 38 in a BPD, set the address to the BBA (0F8000h) plus the offset (02h), i.e. 0F8002h. Then examine bit 0 of
the data to determine if the block is locked.
2.
See Section 13.1.4, “Block Lock Status” on page 73 for valid lock status.
10.5
CFI Query
This device contains a separate CFI query database that acts as an “on-chip datasheet.”
The CFI information within this device can be accessed by issuing the Read Query
command and supplying a specific address. The address is constructed from the base
address of a partition plus a particular offset corresponding to the desired CFI field.
Appendix B, “Common Flash Interface (CFI)” on page 89 shows accessible CFI fields
and their address offsets.
Issuing the Read Query command to a partition that is programming or erasing puts
that partition in read query mode while the partition continues to program or erase in
the background.
10.6
Read Status Register
The device’s Status Register displays program and erase operation status. A partition’s
status can be read after writing the Read Status Register command to any location
within the partition’s address range. Read-status mode is the default read mode
following a Program, Erase, or Lock Block command sequence. Subsequent single reads
from that partition will return its status until another valid command is written.
The read-status mode supports single synchronous and single asynchronous reads
only; it doesn’t support burst reads. The first falling edge of OE# or CE# latches and
updates Status Register data. The operation doesn’t affect other partitions’ modes.
Because the Status Register is 8 bits wide, only DQ [7:0] contains valid Status Register
data; DQ [15:8] contains zeros. See Table 25, “Status Register Definitions” on page 57
and Table 26, “Status Register Descriptions” on page 58.
Each 4-Mbit partition contains its own Status Register. Bits SR[6:0] are unique to each
partition, but SR[7], the Device WSM Status (DWS) bit, pertains to the entire device.
SR[7] provides program and erase status of the entire device. By contrast, the Partition
WSM Status (PWS) bit, SR[0], provides program and erase status of the addressed
partition only. Status register bits SR[6:1] present information about partition-specific
program, erase, suspend, VPP, and block-lock states. Table 27, “Status Register Device
WSM and Partition Write Status Description” on page 58 presents descriptions of DWS
(SR[7]) and PWS (SR[0]) combinations.
Table 25: Status Register Definitions
DWS
7
ESS
6
ES
5
PS
4
VPPS
3
PSS
2
DPS
1
PWS
0
November 2007
Order Number: 290701-18
Datasheet
57
Numonyx™ Wireless Flash Memory (W18)
Table 26: Status Register Descriptions
Bit
Name
State
Description
SR[7] indicates erase or program completion in the
device. SR[6:1] are invalid while SR[7] = 0. See
Table 27 for valid SR[7] and SR[0] combinations.
DWS
0 = Device WSM is Busy
1 = Device WSM is Ready
7
Device WSM Status
After issuing an Erase Suspend command, the WSM
halts and sets SR[7] and SR[6]. SR[6] remains set
until the device receives an Erase Resume command.
ESS
0 = Erase in progress/completed
6
Erase Suspend Status 1 = Erase suspended
ES
0 = Erase successful
1 = Erase error
SR[5] is set if an attempted erase failed. A Command
Sequence Error is indicated when SR[7,5:4] are set.
5
4
Erase Status
PS
0 = Program successful
1 = Program error
SR[4] is set if the WSM failed to program a word.
Program Status
The WSM indicates the VPP level after program or erase
completes. SR[3] does not provide continuous VPP
VPPS
VPP Status
0 = VPP OK
1 = VPP low detect, operation aborted
3
2
1
feedback and isn’t guaranteed when VPP ≠ VPP1/2
.
PSS
After receiving a Program Suspend command, the
WSM halts execution and sets SR[7] and SR[2]. They
remain set until a Resume command is received.
0 = Program in progress/completed
1 = Program suspended
Program Suspend
Status
0 = Unlocked
1 = Aborted erase/program attempt on
locked block
If an erase or program operation is attempted to a
locked block (if WP# = VIL), the WSM sets SR[1] and
aborts the operation.
DPS
Device Protect Status
Addressed partition is erasing or programming. In EFP
mode, SR[0] indicates that a data-stream word has
finished programming or verifying depending on the
particular EFP phase. See Table 27 for valid SR[7]
and SR[0] combinations.
0 = This partition is busy, but only if
SR[7]=0
Partition Write Status 1 = Another partition is busy, but only
if SR[7]=0
PWS
0
Table 27: Status Register Device WSM and Partition Write Status Description
DWS
(SR[7])
PWS
(SR[0])
Description
The addressed partition is performing a program/erase operation.
EFP: device has finished programming or verifying data, or is ready for data.
0
0
0
1
A partition other than the one currently addressed is performing a program/erase operation.
EFP: the device is either programming or verifying data.
No program/erase operation is in progress in any partition. Erase and Program suspend bits (SR[6,2])
indicate whether other partitions are suspended.
EFP: the device has exited EFP mode.
1
1
0
1
Won’t occur in standard program or erase modes.
EFP: this combination does not occur.
10.7
Clear Status Register
The Clear Status Register command clears the Status Register and leaves all partition
output states unchanged. The WSM can set all Status Register bits and clear bits
SR[7:6,2,0]. Because bits SR[5,4,3,1] indicate various error conditions, they can only
be cleared by the Clear Status Register command. By allowing system software to reset
these bits, several operations (such as cumulatively programming several addresses or
erasing multiple blocks in sequence) can be performed before reading the Status
Register to determine error occurrence. If an error is detected, the Status Register
must be cleared before beginning another command or sequence. Device reset (RST#
= VIL) also clears the Status Register. This command functions independently of VPP.
Datasheet
58
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
11.0
Program Operations
11.1
Word Program
When the Word Program command is issued, the WSM executes a sequence of
internally timed events to program a word at the desired address and verify that the
bits are sufficiently programmed. Programming the flash array changes specifically
addressed bits to 0; 1 bits do not change the memory cell contents.
Programming can occur in only one partition at a time. All other partitions must be in
either a read mode or erase suspend mode. Only one partition can be in erase suspend
mode at a time.
The Status Register can be examined for program progress by reading any address
within the partition that is busy programming. However, while most Status Register bits
are partition-specific, the Device WSM Status bit, SR[7], is device-specific; that is, if
the Status Register is read from any other partition, SR[7] indicates program status of
the entire device. This permits the system CPU to monitor program progress while
reading the status of other partitions.
CE# or OE# toggle (during polling) updates the Status Register. Several commands can
be issued to a partition that is programming: Read Status Register, Program Suspend,
Read Identifier, and Read Query. The Read Array command can also be issued, but the
read data is indeterminate.
After programming completes, three Status Register bits can signify various possible
error conditions. SR[4] indicates a program failure if set. If SR[3] is set, the WSM
couldn’t execute the Word Program command because VPP was outside acceptable
limits. If SR[1] is set, the program was aborted because the WSM attempted to
program a locked block.
After the Status Register data is examined, clear it with the Clear Status Register
command before a new command is issued. The partition remains in Status Register
mode until another command is written to that partition. Any command can be issued
after the Status Register indicates program completion.
If CE# is deasserted while the device is programming, the devices will not enter
standby mode until the program operation completes.
November 2007
Order Number: 290701-18
Datasheet
59
Numonyx™ Wireless Flash Memory (W18)
Figure 26: Word Program Flowchart
WORD PROGRAM PROCEDURE
Bus
Operation
Start
Command
Comments
Program Data = 40h
Write
Write
Read
Setup
Addr = Location to program (WA)
Write 40h,
Word Address
Data = Data to program (WD)
Addr = Location to program (WA)
Data
Write Data
Word Address
Read SRD
Toggle CE# or OE# to update SRD
Suspend
Program
Loop
Read Status
Register
Check SR[7]
1 = WSM ready
0 = WSM busy
Standby
No
Yes
Suspend
Program
0
SR[7] =
1
Repeat for subsequent programming operations.
Full status register check can be done after each program or
after a sequence of program operations.
Full Program
Status Check
(if desired)
Program
Complete
FULL PROGRAM STATUS CHECK PROCEDURE
Read Status
Register
Bus
Command
Operation
Comments
Check SR[3]
1 = VPP error
Standby
Standby
VPP Range
Error
1
1
1
SR[3] =
0
Check SR[4]
1 = Data program error
Check SR[1]
Program
Error
SR[4] =
0
Standby
1 = Attempted program to locked block
Program aborted
SR[3] MUST be cleared before the WSM will allow further
program attempts
Device
Protect Error
SR[1] =
0
Only the Clear Staus Register command clears SR[4:3,1].
If an error is detected, clear the status register before
attempting a program retry or other error recovery.
Program
Successful
11.2
Factory Programming
The standard factory programming mode uses the same commands and algorithm as
the Word Program mode (40h/10h). When VPP is at VPP1, program and erase currents
are drawn through VCC. If VPP is driven by a logic signal, VPP1 must remain above the
VPP1Min value to perform in-system flash modifications. When VPP is connected to a
12 V power supply, the device draws program and erase current directly from VPP. This
eliminates the need for an external switching transistor to control the VPP voltage.
Figure 35, “Examples of VPP Power Supply Configurations” on page 77 shows examples
of flash power supply usage in various configurations.
Datasheet
60
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
The 12-V VPP mode enhances programming performance during the short time period
typically found in manufacturing processes; however, it is not intended for extended
use.12 V may be applied to VPP during program and erase operations as specified in
Section 5.0, “Maximum Ratings and Operating Conditions” on page 21. VPP may be
connected to 12 V for a total of tPPH hours maximum. Stressing the device beyond
these limits may cause permanent damage.
11.3
Enhanced Factory Program (EFP)
EFP substantially improves device programming performance through a number of
enhancements to the conventional 12 Volt word program algorithm. EFP's more
efficient WSM algorithm eliminates the traditional overhead delays of the conventional
word program mode in both the host programming system and the flash device.
Changes to the conventional word programming flowchart and internal WSM routine
were developed because of today's beat-rate-sensitive manufacturing environments; a
balance between programming speed and cycling performance was attained.
The host programmer writes data to the device and checks the Status Register to
determine when the data has completed programming. This modification essentially
cuts write bus cycles in half. Following each internal program pulse, the WSM
increments the device's address to the next physical location. Now, programming
equipment can sequentially stream program data throughout an entire block without
having to setup and present each new address. In combination, these enhancements
reduce much of the host programmer overhead, enabling more of a data streaming
approach to device programming.
EFP further speeds up programming by performing internal code verification. With this,
PROM programmers can rely on the device to verify that it has been programmed
properly. From the device side, EFP streamlines internal overhead by eliminating the
delays previously associated to switch voltages between programming and verify levels
at each memory-word location.
EFP consists of four phases: setup, program, verify and exit. Refer to Figure 27,
“Enhanced Factory Program Flowchart” on page 64 for a detailed graphical
representation of how to implement EFP.
11.3.1
EFP Requirements and Considerations
Ambient temperature: TA = 25 °C ± 5 °C
VCC within specified operating range
EFP Requirements
VPP within specified VPP2 range
Target block unlocked
Block cycling below 100 erase cycles 1
RWW not supported2
EFP Considerations
EFP programs one block at a time
EFP cannot be suspended
Notes:
1.
Recommended for optimum performance. Some degradation in performance may occur if this limit is
exceeded, but the internal algorithm will continue to work properly.
2.
Code or data cannot be read from another partition during EFP.
November 2007
Order Number: 290701-18
Datasheet
61
Numonyx™ Wireless Flash Memory (W18)
11.3.2
Setup
After receiving the EFP Setup (30h) and EFP Confirm (D0h) command sequence, SR[7]
transitions from a 1 to a 0 indicating that the WSM is busy with EFP algorithm startup.
A delay before checking SR[7] is required to allow the WSM time to perform all of its
setups and checks (VPP level and block lock status). If an error is detected, Status
Register bits SR[4], SR[3], and/or SR[1] are set and EFP operation terminates.
Note:
After the EFP Setup and Confirm command sequence, reads from the device
automatically output Status Register data. Do not issue the Read Status Register
command; it will be interpreted as data to program at WA0.
11.3.3
Program
After setup completion, the host programming system must check SR[0] to determine
“data-stream ready" status (SR[0]=0). Each subsequent write after this is a program-
data write to the flash array. Each cell within the memory word to be programmed to 0
receives one WSM pulse; additional pulses, if required, occur in the verify phase.
SR[0]=1 indicates that the WSM is busy applying the program pulse.
The host programmer must poll the device's Status Register for the "program done"
state after each data-stream write. SR[0]=0 indicates that the appropriate cell(s)
within the accessed memory location have received their single WSM program pulse,
and that the device is now ready for the next word. Although the host may check full
status for errors at any time, it is only necessary on a block basis, after EFP exit.
Addresses must remain within the target block. Supplying an address outside the
target block immediately terminates the program phase; the WSM then enters the EFP
verify phase.
The address can either hold constant or it can increment. The device compares the
incoming address to that stored from the setup phase (WA0); if they match, the WSM
programs the new data word at the next sequential memory location. If they differ, the
WSM jumps to the new address location.
The program phase concludes when the host programming system writes to a different
block address, and data supplied must be FFFFh. Upon program phase completion, the
device enters the EFP verify phase.
11.3.4
Verify
A high percentage of the flash bits program on the first WSM pulse. However, for those
cells that do not completely program on their first attempt, EFP internal verification
identifies them and applies additional pulses as required.
The verify phase is identical in flow to the program phase, except that instead of
programming incoming data, the WSM compares the verify-stream data to that which
was previously programmed into the block. If the data compares correctly, the host
programmer proceeds to the next word. If not, the host waits while the WSM applies an
additional pulse(s).
The host programmer must reset its initial verify-word address to the same starting
location supplied during the program phase. It then reissues each data word in the
same order as during the program phase. Like programming, the host may write each
subsequent data word to WA0 or it may increment up through the block addresses.
The verification phase concludes when the interfacing programmer writes to a different
block address; data supplied must be FFFFh. Upon completion of the verify phase, the
device enters the EFP exit phase.
Datasheet
62
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
11.3.5
Exit
SR[7]=1 indicates that the device has returned to normal operating conditions. A full
status check should be performed at this time to ensure the entire block programmed
successfully. After EFP exit, any valid CUI command can be issued.
November 2007
Order Number: 290701-18
Datasheet
63
Numonyx™ Wireless Flash Memory (W18)
Figure 27: Enhanced Factory Program Flowchart
EFP Setup
EFP Program
EFP Verify
EFP Exit
Read
Status Register
Read
Status Register
Read
Status Register
Start
VPP = 12V
Unlock Block
SR[0]=1=N
SR[0]=1=N
SR[7]=0=N
Data Stream
Ready?
Verify Stream
Ready?
EFP
Exited?
SR[0] =0=Y
SR[0] =0=Y
SR[7]=1=Y
Write 30h
Address = WA
0
Write Data
Address = WA
Write Data
Address = WA
Full Status Check
Procedure
0
0
Write D0h
Address = WA
0
Read
Status Register
Read
Status Register
Operation
Complete
EFP setup time
Program
Done?
Verify
Done?
Read
Status Register
SR[0]=0=Y
SR[0]=0=Y
N
N
Last
Data?
Last
Data?
EFP Setup
Done?
Y
Y
SR[7]=1=N
Check VPP & Lock
errors (SR[3,1])
Write FFFFh
Write FFFFh
Address ≠ BBA
Address
≠
BBA
Exit
EFP Setup
EFP Program
EFP Verify
Bus
State
Bus
State
Bus
State
Comments
Comments
Comments
Read
Status Register
Check SR[0]
Read
Status Register
Verify Check SR[0]
Unlock VPP = 12V
Block Unlock block
Write
Data
Standby Stream 0 = Ready for data
Ready? 1 = Not ready for data
Standby Stream 0 = Ready for verify
Ready? 1 = Not ready for verify
EFP
Data = 30h
Write
Write
Setup Address = WA
0
EFP
Data = D0h
Write
Data = Data to program
Write
Data = Word to verify
Confirm Address = WA
(note 1)
Address = WA
(note 2)
Address = WA
0
0
0
Read
Status Register
Read
Status Register
Standby
Read
EFP setup time
Check SR[0]
0 = Program done
1 = Program not done
Check SR[0]
0 = Verify done
1 = Verify not done
Program
Done?
Standby Verify
(note 3) Done?
Status Register
Check SR[7]
Standby
EFP
Standby Setup 0 = EFP ready
Done? 1 = EFP not ready
Last
Device automatically
Last
Device automatically
Standby
Standby
Data? increments address.
Data? increments address.
If SR[7] = 1:
Error
Exit Data = FFFFh
Write Program Address not within same
Phase BBA
Exit Data = FFFFh
Verify Address not within same
Phase BBA
Check SR[3,1]
Standby Condition
SR[3] = 1 = VPP error
Check
Write
SR[1] = 1 = locked block
EFP Exit
Status Register
1. WA0 = first Word Address to be programmed within the target block. The BBA (Block Base
Read
Address) must remain constant throughout the program phase data stream; WA can be held
constant at the first address location, or it can be written to sequence up through the addresses
within the block. Writing to a BBA not equal to that of the block currently being written to
terminates the EFP program phase, and instructs the device to enter the EFP verify phase.
2. For proper verification to occur, the verify data stream must be presented to the device in the
same sequence as that of the program phase data stream. Writing to a BBA not equal tWo A
terminates the EFP verify phase, and instructs the device to exit EFP.
3. Bits that did not fully program with the single WSM pulse of the EFP program phase receive
additional program-pulse attempts during the EFP verify phase. The device will report any
program failure by setting SR[4]=1; this check can be performed during the full status check afte
EFP has been exited for that block, and will indicate any error within the entire data stream.
Check SR[7]
EFP
Standby
0 = Exit not finished
Exited?
1 = Exit completed
Repeat for subsequent operations.
After EFP exit, a Full Status Check can
determine if any program error occurred.
See the Full Status Check procedure in the
Word Program flowchart.
Datasheet
64
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
12.0
Program and Erase Operations
12.1
Program/Erase Suspend and Resume
The Program Suspend and Erase Suspend commands halt an in-progress program or
erase operation. The command can be issued at any device address. The partition
corresponding to the command’s address remains in its previous state. A suspend
command allows data to be accessed from memory locations other than the one being
programmed or the block being erased.
A program operation can be suspended only to perform a read operation. An erase
operation can be suspended to perform either a program or a read operation within any
block, except the block that is erase suspended. A program command nested within a
suspended erase can subsequently be suspended to read yet another location. Once a
program or erase process starts, the Suspend command requests that the WSM
suspend the program or erase sequence at predetermined points in the algorithm. The
partition that is actually suspended continues to output Status Register data after the
Suspend command is written. An operation is suspended when status bits SR[7] and
SR[6] and/or SR[2] are set.
To read data from blocks within the partition (other than an erase-suspended block),
you can write a Read Array command. Block erase cannot resume until the program
operations initiated during erase suspend are complete. Read Array, Read Status
Register, Read Identifier (ID), Read Query, and Program Resume are valid commands
during Program or Erase Suspend. Additionally, Clear Status Register, Program,
Program Suspend, Erase Resume, Lock Block, Unlock Block, and Lock-Down Block are
valid commands during erase suspend.
To read data from a block in a partition that is not programming or erasing, the
operation does not need to be suspended. If the other partition is already in Read
Array, ID, or Query mode, issuing a valid address returns corresponding data. If the
other partition is not in a read mode, one of the read commands must be issued to the
partition before data can be read.
During a suspend, CE# = VIH places the device in standby state, which reduces active
current. VPP must remain at its program level and WP# must remain unchanged while
in suspend mode.
A resume command instructs the WSM to continue programming or erasing and clears
Status Register bits SR[2] (or SR[6]) and SR[7]. The Resume command can be written
to any partition. When read at the partition that is programming or erasing, the device
outputs data corresponding to the partition’s last mode. If Status Register error bits are
set, the Status Register can be cleared before issuing the next instruction. RST# must
remain at VIH. See Figure 28, “Program Suspend / Resume Flowchart” on page 66, and
Figure 29, “Erase Suspend / Resume Flowchart” on page 67.
If a suspended partition was placed in Read Array, Read Status Register, ID, or Query
mode during the suspend, the device remains in that mode and outputs data
corresponding to that mode after the program or erase operation is resumed. After
resuming a suspended operation, issue the read command appropriate to the read
operation. To read status after resuming a suspended operation, issue a Read Status
Register command (70h) to return the suspended partition to status mode.
November 2007
Order Number: 290701-18
Datasheet
65
Numonyx™ Wireless Flash Memory (W18)
Figure 28: Program Suspend / Resume Flowchart
PROGRAM SUSPEND / RESUME PROCEDURE
Bus
Operation
Start
Command
Comments
Program Data = B0h
Suspend Addr = Block to suspend (BA)
Program Suspend
Write B0h
Any Address
Write
Write
Read
Status
Data = 70h
Addr = Same partition
Read Status
Write 70h
Same Partition
Status register data
Toggle CE# or OE# to update Status
register
Addr = Suspended block (BA)
Read
Read Status
Register
Check SR.7
Standby
Standby
1 = WSM ready
0 = WSM busy
0
0
SR.7 =
1
Check SR.2
1 = Program suspended
0 = Program completed
Program
Completed
SR.2 =
Data = FFh
Addr = Any address within the
suspended partition
1
Read
Array
Write
Read
Write
Read Array
Write FFh
Susp Partition
Read array data from block other than
the one being programmed
Read Array
Data
Program Data = D0h
Resume Addr = Suspended block (BA)
If the suspended partition was placed in Read Array mode:
Done
No
Reading
Return partition to Status mode:
Read
Write
Data = 70h
Yes
Status
Addr = Same partition
Program Resume
Read Array
Write FFh
Write D0h
Any Address
Pgm'd Partition
Program
Resumed
Read Array
Data
Read Status
Write 70h
Same Partition
PGM_SUS.WMF
Datasheet
66
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 29: Erase Suspend / Resume Flowchart
ERASE SUSPEND / RESUME PROCEDURE
Bus
Operation
Start
Command
Comments
Erase
Data = B0h
Erase Suspend
Write B0h
Any Address
Write
Write
Suspend Addr = Any address
Read
Status
Data = 70h
Addr = Same partition
Read
Status
Write 70h
Same Partition
Status register data. Toggle CE# or
OE# to update Status register
Addr = Same partition
Read
Read Status
Register
Check SR.7
Standby
1 = WSM ready
0 = WSM busy
0
0
SR.7 =
1
Check SR.6
1 = Erase suspended
0 = Erase completed
Standby
Write
Erase
Completed
SR.6 =
1
Read Array Data = FFh or 40h
or Program Addr = Block to program or read
Read or
Write
Read array or program data from/to
block other than the one being erased
Read
Program
Read or
Program?
Read Array
Data
Program
Loop
Program Data = D0h
Resume Addr = Any address
No
Write
If the suspended partition was placed in
Read Array mode or a Program Loop:
Done?
Yes
Return partition to Status mode:
Data = 70h
Addr = Same partition
Read
Status
Erase Resume
Read
Array
Write
Write D0h
Any Address
Write FFh
Erased Partition
Read Array
Data
Erase Resumed
Read
Status
Write 70h
ERAS_SUS.WMF
Same Partition
12.2
Block Erase
The 2-cycle block erase command sequence, consisting of Erase Setup (20h) and Erase
Confirm (D0h), initiates one block erase at the addressed block. Only one partition can
be in an erase mode at a time; other partitions must be in a read mode. The Erase
Confirm command internally latches the address of the block to be erased. Erase forces
all bits within the block to 1. SR[7] is cleared while the erase executes.
After writing the Erase Confirm command, the selected partition is placed in read
Status Register mode and reads performed to that partition return the current status
data. The address given during the Erase Confirm command does not need to be the
same address used in the Erase Setup command. So, if the Erase Confirm command is
given to partition B, then the selected block in partition B will be erased even if the
Erase Setup command was to partition A.
November 2007
Order Number: 290701-18
Datasheet
67
Numonyx™ Wireless Flash Memory (W18)
The 2-cycle erase sequence cannot be interrupted with a bus write operation. For
example, an Erase Setup command must be immediately followed by the Erase Confirm
command in order to execute properly. If a different command is issued between the
setup and confirm commands, the partition is placed in read-status mode, the Status
Register signals a command sequence error, and all subsequent erase commands to
that partition are ignored until the Status Register is cleared.
The CPU can detect block erase completion by analyzing SR[7] of that partition. If an
error bit (SR[5,3,1]) was flagged, the Status Register can be cleared by issuing the
Clear Status Register command before attempting the next operation. The partition
remains in read-status mode until another command is written to its CUI. Any CUI
instruction can follow after erasing completes. The CUI can be set to read-array mode
to prevent inadvertent Status Register reads.
Datasheet
68
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 30: Block Erase Flowchart
BLOCK ERASE PROCEDURE
Bus
Start
Command
Operation
Comments
Block
Erase
Setup
Data = 20h
Addr = Block to be erased (BA)
Write
Write
Read
Write 20h
Block Address
Erase
Data = D0h
Confirm Addr = Block to be erased (BA)
Write D0h and
Block Address
Read SRD
Toggle CE# or OE# to update SRD
Suspend
Erase
Loop
Read Status
Register
Check SR[7]
1 = WSM ready
0 = WSM busy
Standby
No
Suspend
Erase
0
Yes
SR[7] =
1
Repeat for subsequent block erasures.
Full status register check can be done after each block erase
or after a sequence of block erasures.
Full Erase
Status Check
(if desired)
Block Erase
Complete
FULL ERASE STATUS CHECK PROCEDURE
Read Status
Register
Bus
Command
Operation
Comments
Check SR[3]
1 = VPP error
Standby
Standby
Standby
VPP Range
Error
1
1
1
1
SR[3] =
0
Check SR[5:4]
Both 1 = Command sequence error
Command
Sequence Error
Check SR[5]
1 = Block erase error
SR[5:4] =
0
Check SR[1]
Standby
1 = Attempted erase of locked block
Erase aborted
Block Erase
Error
SR[5] =
0
SR[3,1] must be cleared before the WSM will allow further
erase attempts.
Erase of
Locked Block
Aborted
SR[1] =
0
Only the Clear Status Register command clears SR[5:3,1].
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
Block Erase
Successful
12.3
Read-While-Write and Read-While-Erase
The Numonyx™ Wireless Flash Memory (W18) supports flexible multi-partition dual-
operation architecture. By dividing the flash memory into many separate partitions, the
device can read from one partition while programing or erasing in another partition;
hence the terms, RWW and RWE. Both of these features greatly enhance data storage
performance.
November 2007
Order Number: 290701-18
Datasheet
69
Numonyx™ Wireless Flash Memory (W18)
The product does not support simultaneous program and erase operations. Attempting
to perform operations such as these results in a command sequence error. Only one
partition can be programming or erasing while another partition is reading. However,
one partition may be in erase suspend mode while a second partition is performing a
program operation, and yet another partition is executing a read command. Table 22,
“Command Codes and Descriptions” on page 51 describes the command codes
available for all functions.
Datasheet
70
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
13.0
Security Modes
The Numonyx Wireless Flash Memory (W18) offers both hardware and software
security features to protect the flash data. The software security feature is used by
executing the Lock Block command. The hardware security feature is used by executing
the Lock-Down Block command and by asserting the WP# signal.
Refer to Figure 31, “Block Locking State Diagram” on page 72 for a state diagram of
the flash security features. Also see Figure 32, “Locking Operations Flowchart” on
page 74.
13.1
Block Lock Operations
Individual instant block locking protects code and data by allowing any block to be
locked or unlocked with no latency. This locking scheme offers two levels of protection.
The first allows software-only control of block locking (useful for frequently changed
data blocks), while the second requires hardware interaction before locking can be
changed (protects infrequently changed code blocks).
The following sections discuss the locking system operation. The term “state [abc]”
specifies locking states; for example, “state [001],” where a = WP# value, b = block
lock-down status bit
D1, and c = Block Lock Status Register bit D0. Figure 31, “Block Locking State
Diagram” on page 72 defines possible locking states.
The following summarizes the locking functionality.
• All blocks power-up in a locked state.
• Unlock commands can unlock these blocks, and lock commands can lock them
again.
• The Lock-Down command locks a block and prevents it from being unlocked when
WP# is asserted.
— Locked-down blocks can be unlocked or locked with commands as long as WP#
is deasserted.
— The lock-down status bit is cleared only when the device is reset or powered-
down.
Block lock registers are not affected by the VPP level. They may be modified and read
even if VPP ≤ VPPLK
.
Each block’s locking status can be set to locked, unlocked, and lock-down, as described
in the following sections. See Figure 32, “Locking Operations Flowchart” on page 74.
November 2007
Order Number: 290701-18
Datasheet
71
Numonyx™ Wireless Flash Memory (W18)
Figure 31: Block Locking State Diagram
Locked-
Hardware
Locked5
[011]
Locked
Down4,5
Power-Up/Reset
[011]
[X01]
WP# Hardware Control
Software
Locked
Unlocked
Unlocked
[111]
[110]
[X00]
Software Block Lock (0x60/0x01) or Software Block Unlock (0x60/0xD0)
Software Block Lock-Down (0x60/0x2F)
WP# hardware control
Notes:
1. [a,b,c] represents [WP#, D1, D0]. X = Don’t Care.
2. D1 indicates block Lock-down status. D1 = ‘0’, Lock-down has not been issued to
this block. D1 = ‘1’, Lock-down has been issued to this block.
3. D0 indicates block lock status. D0 = ‘0’, block is unlocked. D0 = ‘1’, block is locked.
4. Locked-down = Hardware + Software locked.
5. [011] states should be tracked by system software to determine difference between
Hardware Locked and Locked-Down states.
13.1.1
13.1.2
13.1.3
Lock
All blocks default to locked (state [x01]) after initial power-up or reset. Locked blocks
are fully protected from alteration. Attempted program or erase operations to a locked
block will return an error in SR[1]. Unlocked blocks can be locked by using the Lock
Block command sequence. Similarly, a locked block’s status can be changed to
unlocked or lock-down using the appropriate software commands.
Unlock
Unlocked blocks (states [x00] and [110]) can be programmed or erased. All unlocked
blocks return to the locked state when the device is reset or powered-down. An
unlocked block’s status can be changed to the locked or locked-down state using the
appropriate software commands. A locked block can be unlocked by writing the Unlock
Block command sequence if the block is not locked-down.
Lock-Down
Locked-down blocks (state [011]) offer the user an additional level of write protection
beyond that of a regular locked block. A block that is locked-down cannot have it’s
state changed by software if WP# is asserted. A locked or unlocked block can be
locked-down by writing the Lock-Down Block command sequence. If a block was set to
locked-down, then later changed to unlocked, a Lock-Down command should be issued
prior asserting WP# will put that block back to the locked-down state. When WP# is
deasserted, locked-down blocks are changed to the locked state and can then be
unlocked by the Unlock Block command.
Datasheet
72
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
13.1.4
Block Lock Status
Every block’s lock status can be read in read identifier mode. To enter this mode, issue
the Read Identifier command to the device. Subsequent reads at BBA + 02h will output
that block’s lock status. For example, to read the block lock status of block 10, the
address sent to the device should be 50002h (for a top-parameter device). The lowest
two data bits of the read data, DQ1 and DQ0, represent the lock status. DQ0 indicates
the block lock status. It is set by the Lock Block command and cleared by the Block
Unlock command. It is also set when entering the lock-down state. DQ1 indicates lock-
down status and is set by the Lock-Down command. The lock-down status bit cannot be
cleared by software–only by device reset or power-down. See Table 28.
Table 28: Write Protection Truth Table
VPP
WP#
RST#
Write Protection
Device inaccessible
X
VIL
X
X
X
VIL
VIH
VIH
VIH
Word program and block erase prohibited
All lock-down blocks locked
VIL
VIH
X
All lock-down blocks can be unlocked
13.1.5
Lock During Erase Suspend
Block lock configurations can be performed during an erase suspend operation by using
the standard locking command sequences to unlock, lock, or lock-down a block. This
feature is useful when another block requires immediate updating.
To change block locking during an erase operation, first write the Erase Suspend
command. After checking SR[6] to determine the erase operation has suspended, write
the desired lock command sequence to a block; the lock status will be changed. After
completing lock, unlock, read, or program operations, resume the erase operation with
the Erase Resume command (D0h).
If a block is locked or locked-down during a suspended erase of the same block, the
locking status bits change immediately. When the erase operation is resumed, it will
complete normally.
Locking operations cannot occur during program suspend. Appendix A, “Write State
Machine States” on page 86 shows valid commands during erase suspend.
13.1.6
Status Register Error Checking
Using nested locking or program command sequences during erase suspend can
introduce ambiguity into Status Register results.
Because locking changes require 2-cycle command sequences, for example, 60h
followed by 01h to lock a block, following the Configuration Setup command (60h) with
an invalid command produces a command sequence error (SR[5:4]=11b). If a Lock
Block command error occurs during erase suspend, the device sets SR[4] and SR[5] to
1 even after the erase is resumed. When erase is complete, possible errors during the
erase cannot be detected from the Status Register because of the previous locking
command error. A similar situation occurs if a program operation error is nested within
an erase suspend.
November 2007
Order Number: 290701-18
Datasheet
73
Numonyx™ Wireless Flash Memory (W18)
13.1.7
WP# Lock-Down Control
The Write Protect signal, WP#, adds an additional layer of block security. WP# only
affects blocks that once had the Lock-Down command written to them. After the lock-
down status bit is set for a block, asserting WP# forces that block into the lock-down
state [011] and prevents it from being unlocked. After WP# is deasserted, the block’s
state reverts to locked [111] and software commands can then unlock the block (for
erase or program operations) and subsequently re-lock it. Only device reset or power-
down can clear the lock-down status bit and render WP# ineffective.
Figure 32: Locking Operations Flowchart
LOCKING OPERATIONS PROCEDURE
Start
Bus
Operation
Command
Comments
Write 60h
Block Address
Lock
Setup
Data = 60h
Addr = Block to lock/unlock/lock-down (BA)
Write
Write
Write 01,D0,2Fh
Block Address
Lock,
Unlock, or
Lockdown
Data = 01h (Lock block)
D0h (Unlock block)
2Fh (Lockdown block)
Confirm Addr = Block to lock/unlock/lock-down (BA)
Write 90h
BBA + 02h
Write
Read ID Data = 90h
(Optional)
Plane
Addr = BBA + 02h
Read Block Lock
Status
Read
(Optional)
Block Lock Block Lock status data
Status Addr = BBA + 02h
Locking
Change?
No
Confirm locking change on DQ[1:0].
(See Block Locking State Transitions Table
for valid combinations.)
Standby
(Optional)
Yes
Read
Array
Data = FFh
Addr = Any address in same partition
Write
Write FFh
Partition Address
Lock Change
Complete
13.2
Protection Register
The Numonyx Wireless Flash Memory (W18) includes a 128-bit Protection Register. This
protection register is used to increase system security and for identification purposes.
The protection register value can match the flash component to the system’s CPU or
ASIC to prevent device substitution.
The lower 64 bits within the protection register are programmed by Numonyx with a
unique number in each flash device. The upper 64 OTP bits within the protection
register are left for the customer to program. Once programmed, the customer
segment can be locked to prevent further programming.
Note:
The individual bits of the user segment of the protection register are OTP, not the
register in total. The user may program each OTP bit individually, one at a time, if
desired. After the protection register is locked, however, the entire user segment is
locked and no more user bits can be programmed.
Datasheet
74
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
The protection register shares some of the same internal flash resources as the
parameter partition. Therefore, RWW is only allowed between the protection register
and main partitions. Table 29 describes the operations allowed in the protection
register, parameter partition, and main partition during RWW and RWE.
Table 29: Simultaneous Operations Allowed with the Protection Register
Parameter
Partition
Array Data
Protection
Register
Main
Partitions
Description
While programming or erasing in a main partition, the protection register can
be read from any other partition. Reading the parameter partition data is not
allowed if the protection register is being read from addresses within the
parameter partition.
See
Description
Read
Write/Erase
Write/Erase
Write/Erase
While programming or erasing in a main partition, read operations are allowed
in the parameter partition. Accessing the protection registers from parameter
partition addresses is not allowed.
See
Description
Read
Read
While programming or erasing in a main partition, read operations are allowed
in the parameter partition. Accessing the protection registers in a partition that
is different from the one being programmed or erased, and also different from
the parameter partition, is allowed.
Read
Write
While programming the protection register, reads are only allowed in the other
main partitions. Access to the parameter partition is not allowed. This is
because programming of the protection register can only occur in the
parameter partition, so it will exist in status mode.
No Access
Allowed
Read
Read
While programming or erasing the parameter partition, reads of the protection
registers are not allowed in any partition. Reads in other main partitions are
supported.
No Access
Allowed
Write/Erase
13.2.1
13.2.2
Reading the Protection Register
Writing the Read Identifier command allows the protection register data to be read 16
bits at a time from addresses shown in Table 24, “Device Identification Codes” on
page 56. The protection register is read from the Read Identifier command and can be
read in any partition.Writing the Read Array command returns the device to read-array
mode.
Programing the Protection Register
The Protection Program command should be issued only at the parameter (top or
bottom) partition followed by the data to be programmed at the specified location. It
programs the upper 64 bits of the protection register 16 bits at a time. Table 24,
“Device Identification Codes” on page 56 shows allowable addresses. See also
Figure 33, “Protection Register Programming Flowchart” on page 76. Issuing a
Protection Program command outside the register’s address space results in a Status
Register error (SR[4]=1).
13.2.3
Locking the Protection Register
PR-LK.0 is programmed to 0 by Numonyx to protect the unique device number. PR-LK.1
can be programmed by the user to lock the user portion (upper 64 bits) of the
protection register (See Figure 34, “Protection Register Locking). This bit is set using
the Protection Program command to program “FFFDh” into PR-LK.
After PR-LK register bits are programmed (locked), the protection register’s stored
values can’t be changed. Protection Program commands written to a locked section
result in a Status Register error (SR[4]=1, SR[5]=1).
November 2007
Order Number: 290701-18
Datasheet
75
Numonyx™ Wireless Flash Memory (W18)
Figure 33: Protection Register Programming Flowchart
PROTECTION REGISTER PROGRAMMINGPROCEDURE
Bus
Operation
Start
Command
Comments
Protection
Program
Setup
Data = C0h
Addr = Protection address
Write
Write
Read
Write C0h
Addr=Prot addr
Protection Data = Data to program
Program Addr = Protection address
Write Protect.
Register
Address / Data
Read SRD
Toggle CE# or OE# to update SRD
Read Status
Register
Check SR[7]
1 = WSM Ready
0 = WSM Busy
Standby
No
SR[7] = 1?
Yes
Protection Program operations addresses must be within the
protection register address space. Addresses outside this
space will return an error.
Repeat for subsequent programming operations.
Full Status
Check
(if desired)
Full status register check can be done after each program or
after a sequence of program operations.
Program
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read SRD
SR[4:3] =
Command
Comments
SR[1] SR[3] SR[4]
Standby
Standby
Standby
0
0
1
0
1
1
VPP Error
1,1
1,0
1,1
VPP Range Error
Protection register
program error
1
0
1
Register locked;
SR[4,1] =
SR[4,1] =
Programming Error
Operation aborted
SR[3] MUST be cleared before the WSM will allow further
program attempts.
Locked-Register
Program Aborted
Only the Clear Staus Register command clears SR[4:3,1].
If an error is detected, clear the status register before
attempting a program retry or other error recovery.
Program
Successful
Datasheet
76
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 34: Protection Register Locking
0x88
User-Programmable
0x85
0x84
Intel Factory-Programmed
PR Lock Register 0
0x81
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0x80
13.3
VPP Protection
The Numonyx™ Wireless Flash Memory (W18) provides in-system program and erase
at VPP1. For factory programming, it also includes a low-cost, backward-compatible
12 V programming feature.(Section 11.2, “Factory Programming” on page 60) The EFP
feature can also be used to greatly improve factory program performance as explained
in Section 11.3, “Enhanced Factory Program (EFP)” on page 61.
In addition to the flexible block locking, holding the VPP programming voltage low can
provide absolute hardware write protection of all flash-device blocks. If VPP is below
V
PPLK, program or erase operations result in an error displayed in SR[3]. (See
Figure 35.)
Figure 35: Examples of VPP Power Supply Configurations
System supply
VCC
System supply
VCC
VPP
12 V supply
VPP
Prot# (logic signal)
≤
Ω
10K
•
•
•
•
12 V fast programming
Absolute write protection with VPP VPPLK
Low-voltage programming
Absolute write protection via logic signal
≤
System supply
VCC
(Note 1)
System supply
VCC
VPP
VPP
12 V supply
•
•
Low voltage and 12 V fast programming
Low-voltage programming
Note: If the VCC supply can sink adequate current, you can use an appropriately valued resistor.
November 2007
Order Number: 290701-18
Datasheet
77
Numonyx™ Wireless Flash Memory (W18)
14.0
Set Read Configuration Register
The Set Read Configuration Register (RCR) command sets the burst order, frequency
configuration, burst length, and other parameters.
A two-bus cycle command sequence initiates this operation. The Read Configuration
Register data is placed on the lower 16 bits of the address bus (A[15:0]) during both
bus cycles. The Set Read Configuration Register command is written along with the
configuration data (on the address bus). This is followed by a second write that
confirms the operation and again presents the Read Configuration Register data on the
address bus. The Read Configuration Register data is latched on the rising edge of
ADV#, CE#, or WE# (whichever occurs first). This command functions independently of
the applied VPP voltage. After executing this command, the device returns to read-array
mode. The Read Configuration Register’s contents can be examined by writing the Read
Identifier command and then reading location 05h. See Table 30 and Table 31.
Table 30: Read Configuration Register Summary
First Access Latency
Count
Burst Length
RM
15
R
LC2
13
LC1
12
LC0
11
WT
10
DOC
9
WC
8
BS
7
CC
6
R
5
R
4
BW
3
BL2
BL1
1
BL0
14
2
0
Table 31: Read Configuration Register Descriptions (Sheet 1 of 2)
Bit
Name
Description1
Notes
RM
Read Mode
0 = Synchronous Burst Reads Enabled
15
14
2
5
1 = Asynchronous Reads Enabled (Default)
Reserved
R
001 = Reserved
010 = Code 2
011 = Code 3
100 = Code 4
101 = Code 5
111 = Reserved (Default)
LC[2:0]
13-11
6
First Access Latency Count
WT
0 = WAIT signal is asserted low
1 = WAIT signal is asserted high (Default)
10
9
3
6
6
WAIT Signal Polarity
DOC
0 = Hold Data for One Clock
1 = Hold Data for Two Clock (Default)
Data Output Configuration
0 = WAIT Asserted During Delay
1 = WAIT Asserted One Data Cycle before Delay (Default)
8
WC WAIT Configuration
BS
7
1 = Linear Burst Order (Default)
Burst Sequence
CC
0 = Burst Starts and Data Output on Falling Clock Edge
1 = Burst Starts and Data Output on Rising Clock Edge (Default)
6
Clock Configuration
5
4
R
R
Reserved
Reserved
5
5
Datasheet
78
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 31: Read Configuration Register Descriptions (Sheet 2 of 2)
Bit
Name
Description1
Notes
BW
Burst Wrap
0 = Wrap bursts within burst length set by CR[2:0]
1 = Don’t wrap accesses within burst length set by CR[2:0].(Default)
3
001 = 4-Word Burst
010 = 8-Word Burst
BL[2:0]
2-0
4
011 = 16-Word Burst
111 = Continuous Burst (Default)
Burst Length
Notes:
1.
2.
Undocumented combinations of bits are reserved by Numonyx for future implementations.
Synchronous and page read mode configurations affect reads from main blocks and parameter blocks. Status Register
and configuration reads support single read cycles. RCR[15]=1 disables configuration set by RCR[14:0].
Data is not ready when WAIT is asserted.
3.
4.
5.
6.
Set the synchronous burst length. In asynchronous page mode, the page size equals four words.
Set all reserved Read Configuration Register bits to zero.
Setting the Read Configuration Register for synchronous burst-mode with a latency count of 2 (RCR[13:11] = 010),
data hold for 2 clocks (RCR[9] = 1), and WAIT asserted one data cycle before delay (RCR[8] =1) is not supported.
14.1
Read Mode (RCR[15])
All partitions support two high-performance read configurations: synchronous burst
mode and asynchronous page mode (default). RCR[15] sets the read configuration to
one of these modes.
Status register, query, and identifier modes support only asynchronous and single-
synchronous read operations.
14.2
First Access Latency Count (RCR[13:11])
The First Access Latency Count (RCR[13:11]) configuration tells the device how many
clocks must elapse from ADV# de-assertion (VIH) before the first data word should be
driven onto its data pins. The input clock frequency determines this value. See
Table 31, “Read Configuration Register Descriptions” on page 78 for latency values.
Figure 36 shows data output latency from ADV# assertion for different latencies. Refer
to Section , “” on page 80 for Latency Code Settings.
Figure 36: First Access Latency Configuration
CLK [C]
Valid
Address
Address [A]
ADV# [V]
Code 2
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
D[15:0] [Q]
D[15:0] [Q]
D[15:0] [Q]
D[15:0] [Q]
Code 3
Code 4
Code 5
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Note: Other First Access Latency Configuration settings are reserved.
)
November 2007
Order Number: 290701-18
Datasheet
79
Numonyx™ Wireless Flash Memory (W18)
Figure 37: Word Boundary
Word 0 - 3
Word 4 - 7
Word 8 - B
Word C - F
0 1 2 3 4 5 6 7 8 9 A B C D E F
16 Word Boundary
4 Word Boundary
Note: The 16-word boundary is the end of the device sense word-line.
14.2.1
Latency Count Settings
Table 32: Latency Count Setting for VCCQ = 1.7 V - 1.95 V (90 nm)
VCCQ = 1.7 - 1.95 V
Unit
tAVQV/tCHQV (60ns/11ns)
Latency Count Settings
Frequency Support
2*
3
4, 5
—
< 40
< 61
< 66
MHz
Note: RCR bits[9:8] must be set to 0 for latency count of 2.
Table 33: Latency Count Setting for VCCQ = 1.7 V - 2.24 V (130 nm)
VCCQ = 1.7 - 2.24 V
Unit
t
AVQV/tCHQV (60ns/11ns)
Latency Count Settings
Frequency Support
2
3
4, 5
—
< 40
< 61
< 66
MHz
Datasheet
80
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 38: Example: Latency Count Setting at 3
tADD-DELAY
tDATA
2rd
0st
1nd
3th
4th
CLK (C)
CE# (E)
ADV# (V)
AMAX-0 (A)
Valid Address
High Z
Code 3
Valid
Output
Valid
Output
DQ15-0 (D/Q)
R103
14.3
14.4
WAIT Signal Polarity (RCR[10])
If the WAIT bit is cleared (RCR[10]=0), then WAIT is configured to be asserted low.
This means that a 0 on the WAIT signal indicates that data is not ready and the data
bus contains invalid data. Conversely, if RCR[10] is set, then WAIT is asserted high. In
either case, if WAIT is deasserted, then data is ready and valid. WAIT is asserted during
asynchronous page mode reads.
WAIT Signal Function
The WAIT signal indicates data valid when the device is operating in synchronous mode
(RCR[15]=0), and when addressing a partition that is currently in read-array mode.
The WAIT signal is only “deasserted” when data is valid on the bus.
When the device is operating in synchronous non-read-array mode, such as read
status, read ID, or read query, WAIT is set to an “asserted” state as determined by
RCR[10]. See Figure 12, “WAIT Signal in Synchronous Non-Read Array Operation
Waveform” on page 35.
When the device is operating in asynchronous page mode or asynchronous single word
read mode, WAIT is set to an “asserted” state as determined by RCR[10]. See Figure 8,
“Page-Mode Read Operation Waveform” on page 31, and Figure 6, “Asynchronous Read
Operation Waveform” on page 29.
From a system perspective, the WAIT signal is in the asserted state (based on
RCR[10]) when the device is operating in synchronous non-read-array mode (such as
Read ID, Read Query, or Read Status), or if the device is operating in asynchronous
mode (RCR[15]=1). In these cases, the system software should ignore (mask) the
WAIT signal, because it does not convey any useful information about the validity of
what is appearing on the data bus.
November 2007
Order Number: 290701-18
Datasheet
81
Numonyx™ Wireless Flash Memory (W18)
Table 34: WAIT Signal Conditions
CONDITION
WAIT
CE# = VIH
CE# = VIL
Tri-State
Active
OE#
No-Effect
Active
Synchronous Array Read
Synchronous Non-Array Read
All Asynchronous Read and all Write
Asserted
Asserted
14.5
Data Hold (RCR[9])
The Data Output Configuration (DOC) bit (RCR[9]) determines whether a data word
remains valid on the data bus for one or two clock cycles. The processor’s minimum
data set-up time and the flash memory’s clock-to-data output delay determine whether
one or two clocks are needed.
A DOC set at 1-clock data hold corresponds to a 1-clock data cycle; a DOC set at 2-
clock data hold corresponds to a 2-clock data cycle. The setting of this configuration bit
depends on the system and CPU characteristics. For clarification, see Figure 39, “Data
Output Configuration with WAIT Signal Delay” on page 83.
A method for determining this configuration setting is shown below.
To set the device at 1-clock data hold for subsequent reads, the following condition
must be satisfied:
tCHQV (ns) + tDATA (ns) ≤ One CLK Period (ns)
As an example, use a clock frequency of 66 MHz and a clock period of 15 ns. Assume
the data output hold time is one clock. Apply this data to the formula above for the
subsequent reads:
11 ns + 4 ns ≤ 15 ns
This equation is satisfied, and data output will be available and valid at every clock
period. If tDATA is long, hold for two cycles.
During page-mode reads, the initial access time can be determined by the formula:
tADD-DELAY (ns) + tDATA (ns) + tAVQV (ns)
Subsequent reads in page mode are defined by:
tAPA (ns) + tDATA (ns)
(minimum time)
Datasheet
82
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 39: Data Output Configuration with WAIT Signal Delay
CLK [C]
WAIT (CR.8 = 1)
Note 1
Note 1
tCHQV
WAIT (CR.8 = 0)
1 CLK
Data Hold
Valid
Output
Valid
Output
Valid
Output
DQ15-0 [Q]
WAIT (CR.8 = 0)
tCHTL/H
Note 1
Note 1
tCHQV
WAIT (CR.8 = 1)
2 CLK
Valid
Output
Valid
Output
DQ15-0 [Q]
Data Hold
Note: WAIT shown asserted high (RCR[10]=1).
14.6
WAIT Delay (RCR[8])
The WAIT configuration bit (RCR[8]) controls WAIT signal delay behavior for all
synchronous read-array modes. Its setting depends on the system and CPU
characteristics. The WAIT can be asserted either during, or one data cycle before, a
valid output.
In synchronous linear read array (no-wrap mode RCR[3]=1) of 4-, 8-, 16-, or
continuous-word burst mode, an output delay may occur when a burst sequence
crosses its first device-row boundary (16-word boundary). If the burst start address is
4-word boundary aligned, the delay does not occur. If the start address is misaligned to
a 4-word boundary, the delay occurs once per burst-mode read sequence. The WAIT
signal informs the system of this delay.
14.7
Burst Sequence (RCR[7])
The burst sequence specifies the synchronous-burst mode data order (see Table 35,
“Sequence and Burst Length” on page 84). When operating in a linear burst mode,
either 4-, 8-, or 16-word burst length with the burst wrap bit (RCR[3]) set, or in
continuous burst mode, the device may incur an output delay when the burst sequence
crosses the first 16-word boundary. (See Figure 37, “Word Boundary” on page 80 for
word boundary description.) This depends on the starting address. If the starting
address is aligned to a 4-word boundary, there is no delay. If the starting address is the
end of a 4-word boundary, the output delay is one clock cycle less than the First Access
Latency Count; this is the worst-case delay. The delay takes place only once, and only
if the burst sequence crosses a 16-word boundary. The WAIT pin informs the system of
this delay. For timing diagrams of WAIT functionality, see these figures:
• Figure 9, “Single Synchronous Read-Array Operation Waveform” on page 32
• Figure 10, “Synchronous 4-Word Burst Read Operation Waveform” on page 33
• Figure 11, “WAIT Functionality for EOWL (End-of-Word Line) Condition Waveform”
on page 34
November 2007
Order Number: 290701-18
Datasheet
83
Numonyx™ Wireless Flash Memory (W18)
Table 35: Sequence and Burst Length
Burst Addressing Sequence (Decimal)
4-Word Burst
RCR[2:0]=001b
8-Word Burst
RCR[2:0]=010b
16-Word Burst
RCR[2:0]=011b
Continuous Burst
RCR[2:0]=111b
Linear
Linear
Linear
Linear
0
1
2
3
4
5
6
7
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2...14-15
1-2-3...14-15-0
2-3-4...15-0-1
0-1-2-3-4-5-6-...
1-2-3-4-5-6-7-...
2-3-4-5-6-7-8-...
3-4-5-6-7-8-9-...
4-5-6-7-8-9-10...
5-6-7-8-9-10-11...
6-7-8-9-10-11-12-...
7-8-9-10-11-12-13...
3-4-5...15-0-1-2
4-5-6...15-0-1-2-3
5-6-7...15-0-1...4
6-7-8...15-0-1...5
7-8-9...15-0-1...6
14
15
0
14-15-0-1...13
15-0-1-2-3...14
0-1-2...14-15
1-2-3...15-16
2-3-4...16-17
3-4-5...17-18
4-5-6...18-19
5-6-7...19-20
6-7-8...20-21
7-8-9...21-22
14-15-16-17-18-19-20-...
15-16-17-18-19-...
0-1-2-3
1-2-3-4
2-3-4-5
3-4-5-6
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-8
0-1-2-3-4-5-6-...
1-2-3-4-5-6-7-...
2-3-4-5-6-7-8-...
3-4-5-6-7-8-9-...
4-5-6-7-8-9-10...
5-6-7-8-9-10-11...
6-7-8-9-10-11-12-...
7-8-9-10-11-12-13...
1
2
2-3-4-5-6-7-8-9
3
3-4-5-6-7-8-9-10
4-5-6-7-8-9-10-11
5-6-7-8-9-10-11-12
6-7-8-9-10-11-12-13
7-8-9-10-11-12-13-14
4
5
6
7
14
15
14-15...28-29
15-16...29-30
14-15-16-17-18-19-20-...
15-16-17-18-19-20-21-...
14.8
14.9
Clock Edge (RCR[6])
Configuring the valid clock edge enables a flexible memory interface to a wide range of
burst CPUs. Clock configuration sets the device to start a burst cycle, output data, and
assert WAIT on the clock’s rising or falling edge.
Burst Wrap (RCR[3])
The burst wrap bit determines whether 4-, 8-, or 16-word burst accesses wrap within
the burst-length boundary or whether they cross word-length boundaries to perform
linear accesses. No-wrap mode (RCR[3]=1) enables WAIT to hold off the system
processor, as it does in the continuous burst mode, until valid data is available. In no-
wrap mode (RCR[3]=0), the device operates similarly to continuous linear burst mode
but consumes less power during 4-, 8-, or 16-word bursts.
For example, if RCR[3]=0 (wrap mode) and RCR[2:0] = 1h (4-word burst), possible
linear burst sequences are 0-1-2-3, 1-2-3-0, 2-3-0-1, 3-0-1-2.
Datasheet
84
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
If RCR[3]=1 (no-wrap mode) and RCR[2:0] = 1h (4-word burst length), then possible
linear burst sequences are 0-1-2-3, 1-2-3-4, 2-3-4-5, and 3-4-5-6. RCR[3]=1 not only
enables limited non-aligned sequential bursts, but also reduces power by minimizing
the number of internal read operations.
Setting RCR[2:0] bits for continuous linear burst mode (7h) also achieves the above 4-
word burst sequences. However, significantly more power may be consumed. The 1-2-
3-4 sequence, for example, consumes power during the initial access, again during the
internal pipeline lookup as the processor reads word 2, and possibly again, depending
on system timing, near the end of the sequence as the device pipelines the next 4-word
sequence. RCR[3]=1 while in 4-word burst mode (no-wrap mode) reduces this excess
power consumption.
14.10
Burst Length (RCR[2:0])
The Burst Length bit (BL[2:0]) selects the number of words the device outputs in
synchronous read access of the flash memory array. The burst lengths are 4-word, 8-
word, 16-word, and continuous word.
Continuous-burst accesses are linear only, and do not wrap within any word length
boundaries (see Table 35, “Sequence and Burst Length” on page 84). When a burst
cycle begins, the device outputs synchronous burst data until it reaches the end of the
“burstable” address space.
November 2007
Order Number: 290701-18
Datasheet
85
Numonyx™ Wireless Flash Memory (W18)
Appendix A Write State Machine States
This table shows the command state transitions based on incoming commands. Only
one partition can be actively programming or erasing at a time.
Figure 40: Write State Machine — Next State Table (Sheet 1 of 2)
C h iN e x t S ta te a ft e r C o m m a n d In p u t
E n h a n c e d
F a c to ry
P g m
B E C o n firm ,
C le a r
P r o g ra m
E ra s e
/
R e a d
A rr a y (3
P r o g ra m
E r a s e
S e tu p (4
P /E R e s u m e ,
U L B
R e a d
R e a d
S ta tu s
R e g is te r( 6
C u r r e n t C h ip
S t a t e ( 8 )
)
,5
)
,5 )
S e tu p ( 4
S ta tu s
ID /Q u e r y
)
S u s p e n d
)
(9 )
S e tu p (4
C o n fir m
(F F H )
R e a d y
(1 0 H /4 0 H )
(2 0 H )
(3 0 H )
(D 0 H )
( B 0 H )
( 7 0 H )
(5 0 H )
( 9 0 H , 9 8 H )
P r o g ra m
S e tu p
E ra s e
S e tu p
E F P
R e a d y
R e a d y
S e tu p
L o c k /C R S e tu p
O T P
R e a d y ( L o c k E r ro r)
R e a d y
R e a d y (L o c k E rr o r )
S e tu p
B u s y
O T P B u s y
S e tu p
B u s y
P r o g ra m B u s y
P ro g r a m
P r o g ra m B u s y
P r o g ra m S u s p e n d
R e a d y ( E rr o r )
E r a s e B u s y
P g m S u s p
P r o g ra m B u s y
P ro g r a m S u s p e n d
R e a d y (E r ro r)
E ra s e B u s y
S u s p e n d
S e tu p
B u s y
P g m B u s y
E ra s e B u s y
E r a s e S u s p
E ra s e
P g m in
E ra s e
S u s p e n d
E r a s e
E ra s e S u s p e n d
E ra s e B u s y
E ra s e S u s p e n d
S u s p e n d
S u s p S e tu p
S e tu p
B u s y
P r o g ra m in E r a s e S u s p e n d B u s y
P g m S u s p in
E r a s e S u s p
P ro g r a m in
P r o g ra m in E r a s e S u s p e n d B u s y
P ro g r a m in E ra s e S u s p e n d B u s y
E ra s e S u s p e n d
P g m in E r a s e
S u s p B u s y
S u s p e n d
P r o g ra m S u s p e n d in E r a s e S u s p e n d
P ro g r a m S u s p e n d in E ra s e S u s p e n d
L o c k /C R S e tu p in E r a s e
S u s p e n d
E ra s e S u s p e n d
(L o c k E rro r)
E r a s e S u s p e n d (L o c k E rr o r )
R e a d y ( E rr o r )
E ra s e S u s p
S e tu p
E F P B u s y
R e a d y (E r ro r)
E n h a n c e d
F a c to r y
E F P B u s y (7
V e r i(7
)
E F P B u s y
E F P V e rify
P ro g r a m
)
O u tp u t N e x t S t a t e a f t e r C o m m a n d In p u t
P g m S e tu p ,
E ra s e S e tu p ,
O T P S e tu p ,
P g m in E ra s e S u s p S e tu p ,
E F P S e tu p ,
S ta tu s
E F P B u s y ,
V e r ify B u s y
L o c k /C R S e tu p ,
S ta tu s
L o c k /C R S e tu p in E r a s e S u s p
O T P B u s y
S ta tu s
R e a d y ,
P g m B u s y ,
O
u tp u t
A rr a y (3
P g m S u s p e n d ,
E ra s e B u s y ,
)
S ta tu s
O u tp u t d o e s n o t c h a n g e
S ta tu s
d o e s n o t
c h a n g e
ID /Q u e r y
E ra s e S u s p e n d ,
P g m In E ra s e S u s p B u s y ,
P g m S u s p In E r a s e S u s p
Datasheet
86
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Figure 40: Write State Machine — Next State Table (Sheet 2 of 2)
C h i N e x t S t a t e a f t e r C o m m a n d In p u t
L o c k ,
n lo c k ,
L o c k -
E n h a n c e d
F a c t P g m
L o c k
Ille g a l
c o m m a n d s o r
U
O
T P
D
B
o w
n
W
rite
C
R
( 9
W
S M
B
lo c k
C u r r e n t C h ip
S t a t e ( 8 )
)
)
S e tu p ( 5
C
o n fir m
O p e r a tio n
L o c k -d o w n ,
)
lo c k
E x it ( b lk a d d
( 9
)
)
C o n fi rm
E F P d a ta ( 2
( 9
)
< >
W A 0 )
C
R
s e tu p ( 5
( 6 0 H )
C
o n fir m
C o m p le te s
(C 0 H )
(0 1 H
)
(2 F H
)
(0 3 H
)
(X X X X H )
( o th e r c o d e s )
L o c k /C R
S e tu p
O
T P
R e a d y
L o c k /C
R e a d y
S
e tu p
N
/A
R
S
e tu p
R
e a d y (L o c k E rr o r )
R
e a d y
R
e a d y
R
e a d y
R e a d y ( L o c k E r ro r)
S
e tu p
O T P B u s y
O
T P
B u s y
R
R
e a d y
S
e tu p
P
P
ro g ra m B u s y
ro g ra m B u s y
N
/A
P ro g r a m
B u s y
e a d y
S
S
u s p e n d
P
ro g ra m S u s p e n d
e a d y ( E r ro r)
E r a s e B u s y
N
/A
S
e tu p
R
B u s y
E r a s e B u s y
R
e a d y
E ra s e
L o c k /C R
S e tu p in
u s p e n d
E r a s e S u s p e n d
N
/A
E r a s e S u s p
S
e tu p
P
P
ro g r a m in
ro g r a m in
E
E
ra s e
ra s e
S
S
u s p e n d
u s p e n d
B
B
u s y
u s y
E ra s e
P ro g r a m in
E ra s e S u s p e n d
B u s y
S
u s p e n d
S
u s p e n d
P ro g r a m S u s p e n d in E ra s e S u s p e n d
L o c k /C
R S e tu p in E r a s e
E r a s e S u s p e n d
(L o c k E r ro r )
E r a s e S u s p
E ra s e S u s p
E ra s e S u s p
E r a s e S u s p e n d (L o c k E rr o r )
N
/A
S u s p e n d
S
e tu p
R
e a d y ( E r ro r)
E n h a n c e d
F a c to r y
)
)
E
F P
B
( 7
E F P
B
( 7
E F P B u s y
E F P V e rify
E F P V e rify
P ro g r a m
)
)
( 7
E F P V e r( 7
R
e a d y
R e a d y
V e r
B
O u t p u t N e x t S t a t e a f te r C o m m a n d In p u t
P g m S e tu p ,
E ra s e S e tu p ,
O
T P S e tu p ,
P g m in E ra s e S u s p S e tu p ,
E F P S e tu p ,
S ta tu s
E F P B u s y ,
V e r ify B u s y
L o c k /C
L o c k /C
R
R
S
S
e tu p ,
S ta tu s
A r ra y
S ta tu s
O
u tp u t d o e s
e tu p in E r a s e S u s p
n o t c h a n g e
O
T P B u s y
R e a d y ,
P g m B u s y ,
O
u tp u t d o e s
P g m S u s p e n d ,
E ra s e B u s y ,
S ta tu s
O
u tp u t d o e s n o t c h a n g e
A rr a y
n o t c h a n g e
E ra s e S u s p e n d ,
P g m In E ra s e
S u s p B u s y ,
P g m S u s p In E r a s e S u s p
Notes:
1.
The output state shows the type of data that appears at the outputs if the partition address is the same as the command
address.
A partition can be placed in Read Array, Read Status or Read ID/CFI, depending on the command issued.
Each partition stays in its last output state (Array, ID/CFI or Status) until a new command changes it. The next WSM state
does not depend on the partition's output state.
For example, if partition #1's output state is Read Array and partition #4's output state is Read Status, every read from
partition #4 (without issuing a new command) outputs the Status register.
Illegal commands are those not defined in the command set.
2.
November 2007
Order Number: 290701-18
Datasheet
87
Numonyx™ Wireless Flash Memory (W18)
3.
4.
All partitions default to Read Array mode at power-up. A Read Array command issued to a busy partition results in
undermined data when a partition address is read.
Both cycles of 2 cycles commands should be issued to the same partition address. If they are issued to different partitions,
the second write determines the active partition. Both partitions will output status information when read.
If the WSM is active, both cycles of a 2 cycle command are ignored. This differs from previous Numonyx devices.
The Clear Status command clears Status Register error bits except when the WSM is running (Pgm Busy, Erase Busy, Pgm
Busy In Erase Suspend, OTP Busy, EFP modes) or suspended (Erase Suspend, Pgm Suspend, Pgm Suspend In Erase
Suspend).
5.
6.
7.
EFP writes are allowed only when Status Register bit SR.0 = 0. EFP is busy if Block Address = address at EFP Confirm
command. Any other commands are treated as data.
8.
9.
The "current state" is that of the WSM, not the partition.
Confirm commands (Lock Block, Unlock Block, Lock-down Block, Configuration Register) perform the operation and then
move to the Ready State.
10.
In Erase suspend, the only valid two cycle commands are "Program Word", "Lock/Unlock/Lockdown Block", and "CR
Write". Both cycles of other two cycle commands ("OEM CAM program & confirm", "Program OTP & confirm", "EFP Setup &
confirm", "Erase setup & confirm") will be ignored. In Program suspend or Program suspend in Erase suspend, both cycles
of all two cycle commands will be ignored.
Datasheet
88
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Appendix B Common Flash Interface (CFI)
This appendix defines the data structure or “database” returned by the Common Flash
Interface (CFI) Query command. System software should parse this structure to gain
critical information such as block size, density, x8/x16, and electrical specifications.
Once this information has been obtained, the software will know which command sets
to use to enable flash writes, block erases, and otherwise control the flash component.
The Query is part of an overall specification for multiple command set and control
interface descriptions called Common Flash Interface, or CFI.
B.1
Query Structure Output
The Query database allows system software to obtain information for controlling the
flash device. This section describes the device’s CFI-compliant interface that allows
access to Query data.
Query data are presented on the lowest-order data outputs (DQ0-7) only. The
numerical offset value is the address relative to the maximum bus width supported by
the device. On this family of devices, the Query table device starting address is a 10h,
which is a word address for x16 devices.
For a word-wide (x16) device, the first two Query-structure bytes, ASCII “Q” and “R,”
appear on the low byte at word addresses 10h and 11h. This CFI-compliant device
outputs 00h data on upper bytes. The device outputs ASCII “Q” in the low byte (DQ0-7
)
and 00h in the high byte (DQ8-15).
At Query addresses containing two or more bytes of information, the least significant
data byte is presented at the lower address, and the most significant data byte is
presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal
notation, so the “h” suffix has been dropped. In addition, since the upper byte of word-
wide devices is always “00h,” the leading “00” has been dropped from the table
notation and only the lower byte value is shown. Any x16 device outputs can be
assumed to have 00h on the upper byte in this mode.
Table 36: Summary of Query Structure Output as a Function of Device and Mode
Hex
Offset
Hex
Code
ASCII
Value
Device
00010
00011
00012
51
52
59
“Q”
“R”
“Y”
Device Addresses
November 2007
Order Number: 290701-18
Datasheet
89
Numonyx™ Wireless Flash Memory (W18)
Table 37: Example of Query Structure Output of x16 Device
Word Addressing
Hex Code
Byte Addressing
Hex Code
Offset
Value
Offset
Value
AX - A0
AX - A0
D16 - D0
D7 - D0
00010h
00011h
00012h
00013h
00014h
00015h
00016h
00017h
00018h
0051
0052
0059
P IDLO
P IDHI
PLO
“Q”
“R”
00010h
00011h
00012h
00013h
00014h
00015h
00016h
00017h
00018h
51
52
“Q”
“R”
“Y”
59
“Y”
P rVendor
ID #
P IDLO
P IDLO
P IDHI
...
P rVendor
ID #
ID #
...
P rVendor
TblAdr
AltVendor
ID #
PHI
A IDLO
A IDHI
...
...
...
...
B.2
Query Structure Overview
The Query command causes the flash component to display the Common Flash
Interface (CFI) Query structure or “database.” The structure sub-sections and address
locations are summarized below.
Table 38: Query Structure
Description(1)
Manufacturer Code
Offset
00000h
00001h
(BA+2)h(2)
Sub-Section Name
Device Code
Block Status register
Block-specific information
00004-Fh Reserved
Reserved for vendor-specific information
Command set ID and vendor data offset
Device timing & voltage information
Flash device layout
00010h
0001Bh
00027h
CFI query identification string
System interface information
Device geometry definition
Vendor-defined additional information specific
to the Primary Vendor Algorithm
P(3)
Primary Intel-specific Extended Query Table
Notes:
1.
Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a function of
device bus width and mode.
2.
3.
BA = Block Address beginning location (i.e., 08000h is block 1’s beginning location when the block size is 32K-word).
Offset 15 defines “P” which points to the Primary Numonyx-specific Extended Query Table.
B.3
Block Status Register
The Block Status Register indicates whether an erase operation completed successfully
or whether a given block is locked or can be accessed for flash program/erase
operations.
Block Erase Status (BSR.1) allows system software to determine the success of the last
block erase operation. BSR.1 can be used just after power-up to verify that the VCC
supply was not accidentally removed during an erase operation.
Datasheet
90
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 39: Block Status Register
Offset
Length
Description
Block Lock Status Register
BSR.0 Block lock status
0 = Unlocked
Add.
Value
(BA+2)h(1)
1
BA+2 --00 or --01
BA+2 (bit 0): 0 or 1
1 = Locked
BSR.1 Block lock-down status
0 = Not locked down
1 = Locked down
BA+2 (bit 1): 0 or 1
BA+2 (bit 2–7): 0
BSR 2–7: Reserved for future use
Notes:
1.
BA = Block Address beginning location (i.e., 08000h is block 1’s beginning location when the block size is 32K-word).
B.4
CFI Query Identification String
The Identification String provides verification that the component supports the
Common Flash Interface specification. It also indicates the specification version and
supported vendor-specified command set(s).
November 2007
Order Number: 290701-18
Datasheet
91
Numonyx™ Wireless Flash Memory (W18)
Table 40: CFI Identification
Hex
Code
Offset
Length
Description
Addr.
Value
10:
11:
12:
--51
--52
--59
“Q”
“R”
“Y”
10h
3
Query-unique ASCII string “QRY”
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specific algorithms.
13:
14:
--03
--00
13h
15h
17h
19h
2
2
2
2
—
—
—
—
15:
16:
--39
--00
Extended Query Table primary algorithm address
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists.
17:
18:
--00
--00
Secondary algorithm Extended Query Table address.
0000h means none exists.
19:
1A:
--00
--00
Table 41: System Interface Information
Hex
Code
Offset
Length
Description
Add.
Value
1Bh
1
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--17 1.7V
--19 1.9V
--B4 11.4V
--C6 12.6V
--04 16μs
1Ch
1Dh
1Eh
1
1
1
V
V
V
CC logic supply maximum program/erase voltage
1C:
1D:
1E:
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
PP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
PP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
“n” such that typical single word program time-out = 2n μ-sec
“n” such that typical max. buffer write time-out = 2n μ-sec
“n” such that typical block erase time-out = 2n m-sec
1Fh
20h
21h
22h
23h
24h
25h
26h
1
1
1
1
1
1
1
1
1F:
20:
21:
22:
23:
24:
25:
26:
--00
--0A
--00
NA
1s
NA
“n” such that typical full chip erase time-out = 2n m-sec
“n” such that maximum word program time-out = 2n times typical
“n” such that maximum buffer write time-out = 2n times typical
“n” such that maximum block erase time-out = 2n times typical
“n” such that maximum chip erase time-out = 2n times typical
--04 256μs
--00
--03
--00
NA
8s
NA
Datasheet
92
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
B.5
Device Geometry Definition
Table 42: Device Geometry Definition
Offset
27h
Length
Description
Code
See table below
1
“n” such that device size = 2n in number of bytes
Flash device interface code assignment:
27:
28:
"n" such that n+1 specifies the bit field that represents the flash
device width capabilities as described in the table:
7
6
5
4
3
x64
11
2
x32
10
1
x16
9
0
x8
8
28h
2
—
15
—
—
14
—
—
13
—
—
12
—
--01
x16
0
—
—
—
—
29:
2A:
2B:
2C:
--00
--00
--00
“n” such that maximum number of bytes in write buffer = 2n
2Ah
2Ch
2
1
Number of erase block regions (x) within device:
1. x = 0 means no erase blocking; the device erases in bulk
2. x specifies the number of device regions with one or
more contiguous same-size erase blocks.
See table below
3. Symmetrically blocked partitions have one blocking region
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
4
4
4
2Dh
31h
35h
2D:
2E:
2F:
30:
31:
32:
33:
34:
35:
36:
37:
38:
See table below
See table below
See table below
Erase Block Region 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
Reserved for future erase block region information
32 Mbit
64 Mbit
128 Mbit
–B –T
Address
–B
--16
--01
--00
--00
--00
--02
--07
--00
--20
--00
--3E
--00
--00
--01
--00
--00
--00
--00
–T
–B
–T
27:
28:
29:
2A:
2B:
2C:
2D:
2E:
2F:
30:
31:
32:
33:
34:
35:
36:
37:
38:
--16
--01
--00
--00
--00
--02
--3E
--00
--00
--01
--07
--00
--20
--00
--00
--00
--00
--00
--17
--01
--00
--00
--00
--02
--07
--00
--20
--00
--7E
--00
--00
--01
--00
--00
--00
--00
--17
--01
--00
--00
--00
--02
--7E
--00
--00
--01
--07
--00
--20
--00
--00
--00
--00
--00
--18
--01
--00
--00
--00
--02
--07
--00
--20
--00
--FE
--00
--00
--01
--00
--00
--00
--00
--18
--01
--00
--00
--00
--02
--FE
--00
--00
--01
--07
--00
--20
--00
--00
--00
--00
--00
November 2007
Order Number: 290701-18
Datasheet
93
Numonyx™ Wireless Flash Memory (W18)
B.6
Numonyx-Specific Extended Query Table
Table 43: Primary Vendor-Specific Extended Query
Offset(1)
P = 39h
Hex
Length
Description
(Optional flash features and commands)
Primary extended query table
Add. Code Value
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
(P+5)h
(P+6)h
(P+7)h
(P+8)h
3
39:
3A:
3B:
3C:
3D:
3E:
3F:
40:
41:
--50
--52
--49
--31
--33
--E6
--03
--00
--00
"P"
"R"
"I"
"1"
"3"
Unique ASCII string “PRI“
1
1
4
Major version number, ASCII
Minor version number, ASCII
Optional feature and command support (1=yes, 0=no)
bits 10–31 are reserved; undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of Optional features follows at
the end of the bit–30 field.
bit 0 Chip erase supported
bit 1 Suspend erase supported
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
bit 5 Instant individual block locking supported
bit 6 Protection bits supported
bit 7 Pagemode read supported
bit 0 = 0
No
Yes
Yes
No
bit 1 = 1
bit 2 = 1
bit 3 = 0
bit 4 = 0
bit 5 = 1
bit 6 = 1
bit 7 = 1
bit 8 = 1
bit 9 = 1
No
Yes
Yes
Yes
Yes
Yes
bit 8 Synchronous read supported
bit 9 Simultaneous operations supported
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
(P+9)h
1
2
42:
--01
bits 1–7 reserved; undefined bits are “0”
bit 0 Program supported after erase suspend
Block status register mask
bits 2–15 are Reserved; undefined bits are “0”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
bit 0 = 1
Yes
(P+A)h
(P+B)h
43:
44:
--03
--00
bit 0 = 1
bit 1 = 1
Yes
Yes
(P+C)h
(P+D)h
1
1
V
CC logic supply highest performance program/erase voltage
45:
--18 1.8V
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
VPP optimum program/erase supply voltage
46:
--C0 12.0V
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
Datasheet
94
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 44: Protection Register Information
Offset
P = 39h
Description
(Optional Flash Features and Commands)
Hex
Code
Length
Add.
Value
Number of Protectuib Register fields in JEDEC ID space.
“00h” indicates that 256 protection fields are available.
(P + E)h
1
47:
--01
1
Protection Field 1: Protection Description
This field describes user-available One Time Programmable (OTP)
Protection Register bytes, Some are pre-programmed with device-
unique serial numbers. Others are user-programmable. Bits are 0-15
point to the Protection Register lock byte, the section’s first byte. The
following bytes are factory pre-programmed and user-programmable:
(P + E)h
48:
49:
4A:
4B:
--80
--00
--03
--03
80h
00h
• bits 0-7 = Lock/bytes JEDEC-plane physical low
address
(P + 10)h
(P + 11)h
(P + 12)h
4
8 byte
8 byte
• bites 8-15 = Lock/bytes JEDEC-plane physical high
address
• bits 16-23 = “n” such that 2n = factory pre-
programmed bytes
• bits 24-31 = “n” such that 2n = user-programmable bytes
Table 45: Burst Read Information for Non-muxed Device
Offset(1)
P = 39h
Hex
Add. Code Value
Length
Description
(Optional flash features and commands)
(P+13)h
1
Page Mode Read capability
4C:
--03 8 byte
bits 0–7 = “n” such that 2n HEX value represents the number of
read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
Synchronous mode read capability configuration 1
Bits 3–7 = Reserved
(P+14)h
(P+15)h
1
1
4D:
4E:
--04
--01
4
4
bits 0–2 “n” such that 2n+1 HEX value represents the
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A value
of 07h indicates that the device is capable of continuous
linear bursts that will output data until the internal burst
counter reaches the end of the device’s burstable address
space. This field’s 3-bit value can be written directly to the
Read Configuration Register bits 0–2 if the device is
configured for its maximum word width. See offset 28h for
word width to determine the burst data output width.
Synchronous mode read capability configuration 2
Synchronous mode read capability configuration 3
Synchronous mode read capability configuration 4
(P+16)h
(P+17)h
(P+18)h
1
1
1
4F:
50:
51:
--02
--03
--07 Cont
8
16
November 2007
Order Number: 290701-18
Datasheet
95
Numonyx™ Wireless Flash Memory (W18)
Table 46: Partition and Erase-block Region Information
Offset(1)
P = 39h
See table below
Address
Description
Bot
Top
Bottom
Top
(Optional flash features and commands)
Len
(P+19)h (P+19)h Number of device hardware-partition regions within the device.
x = 0: a single hardware partition device (no fields follow).
x specifies the number of device partition regions containing
one or more contiguous erase block regions.
1
52:
52:
Datasheet
96
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 47: Partition Region 1 Information
Offset(1)
P = 39h
See table below
Address
Description
Bot
53:
54:
55:
Top
53:
54:
55:
Bottom
(P+1A)h (P+1A)h
(P+1B)h (P+1B)h
Top
(Optional flash features and commands)
Number of identical partitions within the partition region
Len
2
(P+1C)h (P+1C)h Number of program or erase operations allowed in a partition
bits 0–3 = number of simultaneous Program operations
1
1
bits 4–7 = number of simultaneous Erase operations
(P+1D)h (P+1D)h Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Program mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
(P+1E)h (P+1E)h Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Erase mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
(P+1F)h (P+1F)h Types of erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in bulk
x = number of erase block regions w/ contiguous same-size
erase blocks. Symmetrically blocked partitions have one
blocking region. Partition size = (Type 1 blocks)x(Type 1
block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+
(Type n blocks)x(Type n block sizes)
56:
57:
58:
56:
57:
58:
1
1
(P+20)h (P+20)h Partition Region 1 Erase Block Type 1 Information
4
59:
5A:
5B:
5C:
5D:
5E:
5F:
59:
5A:
5B:
5C:
5D:
5E:
5F:
(P+21)h (P+21)h
(P+22)h (P+22)h
(P+23)h (P+23)h
(P+24)h (P+24)h
(P+25)h (P+25)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
Partition 1 (Erase Block Type 1)
Minimum block erase cycles x 1000
2
1
(P+26)h (P+26)h Partition 1 (erase block Type 1) bits per cell; internal ECC
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
(P+27)h (P+27)h Partition 1 (erase block Type 1) page mode and synchronous
mode capabilities defined in Table 10.
1
4
60:
60:
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
(P+28)h
(P+29)h
(P+2A)h
(P+2B)h
(P+2C)h
(P+2D)h
(P+2E)h
Partition Region 1 Erase Block Type 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(bottom parameter device only)
Partition 1 (Erase block Type 2)
Minimum block erase cycles x 1000
61:
62:
63:
64:
65:
66:
67:
2
1
Partition 1 (Erase block Type 2) bits per cell
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
(P+2F)h
Partition 1 (Erase block Type 2) pagemode and synchronous
mode capabilities defined in Table 10
1
68:
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
November 2007
Order Number: 290701-18
Datasheet
97
Numonyx™ Wireless Flash Memory (W18)
Table 48: Partition and Erase Block Region Information
Address
32 Mbit
64Mbit
128Mbit
–B
–T
–B
–T
–B
–T
52:
53:
54:
55:
56:
57:
58:
59:
5A:
5B:
5C:
5D:
5E:
5F:
60:
61:
62:
63:
64:
65:
66:
67:
68:
69:
6A:
6B:
6C:
6D:
6E:
6F:
70:
71:
72:
73:
74:
75:
76:
--02
--01
--00
--11
--00
--00
--02
--07
--00
--20
--00
--64
--00
--01
--03
--06
--00
--00
--01
--64
--00
--01
--03
--07
--00
--11
--00
--00
--01
--07
--00
--00
--01
--64
--00
--01
--03
--02
--07
--00
--11
--00
--00
--01
--07
--00
--00
--01
--64
--00
--01
--03
--01
--00
--11
--00
--00
--02
--06
--00
--00
--01
--64
--00
--01
--03
--07
--00
--20
--00
--64
--00
--01
--03
--02
--01
--00
--11
--00
--00
--02
--07
--00
--20
--00
--64
--00
--01
--03
--06
--00
--00
--01
--64
--00
--01
--03
--0F
--00
--11
--00
--00
--01
--07
--00
--00
--01
--64
--00
--01
--03
--02
--0F
--00
--11
--00
--00
--01
--07
--00
--00
--01
--64
--00
--01
--03
--01
--00
--11
--00
--00
--02
--06
--00
--00
--01
--64
--00
--01
--03
--07
--00
--20
--00
--64
--00
--01
--03
--02
--01
--00
--11
--00
--00
--02
--07
--00
--20
--00
--64
--00
--01
--03
--06
--00
--00
--01
--64
--00
--01
--03
--1F
--00
--11
--00
--00
--01
--07
--00
--00
--01
--64
--00
--01
--03
--02
--1F
--00
--11
--00
--00
--01
--07
--00
--00
--01
--64
--00
--01
--03
--01
--00
--11
--00
--00
--02
--06
--00
--00
--01
--64
--00
--01
--03
--07
--00
--20
--00
--64
--00
--01
--03
Notes:
1.
2.
3.
4.
The variable P is a pointer which is defined at CFI offset 15h.
TPD - Top parameter device; BPD - Bottom parameter device.
Partition: Each partition is 4-Mbit in size. It can contain main blocks OR a combination of both main and parameter blocks.
Partition Region: Symmetrical partitions form a partition region. There are two partition regions: A contains all the
partitions that are made up of main blocks only; B contains the partition made up of the parameter and the main blocks.
Datasheet
98
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Appendix C Ordering Information
To order samples, obtain datasheets or inquire about any stack combination, please
contact your local Numonyx representative.
Table 49: 38F Type Stacked Components
PF
38F
5070
M0
Y
0
B
0
Product Die/
Density
Configuration
Voltage/NOR
Flash CE#
Configuration
Parameter /
Mux
Configuration
Package
Designator
Product Line
Designator
NOR Flash
Product Family
Ballout
Identifier
Device
Details
Char 1 = Flash
die #1
V =
0 =
No parameter
SeparateChip blocks; Non-
1.8 V Core
and I/O;
First character
applies to Flash
die #1
Char 2 = Flash
die #2
B =
x16D
Enable per
die
Mux I/O
interface
Ballout
Char 3 =
RAM die #1
PF =
0 =
Second character
applies to Flash
die #2
SCSP, RoHS
(See
Original
released
version of
this
(See
(See
Table 54,
Table 5
Stacked
Table 53,
5,
NOR Flash + Char 4 =
RD =
“Voltage / “Paramete
NOR Flash r / Mux
“Ballout
Decoder
” on
RAM
RAM die #2
SCSP,
Leaded
(See Table 52,
“NOR Flash
Family
product
CE#
Configurati
Configurati on
(See
page 10
2 for
on
Decoder”
Decoder” on
page 101 for
details)
Table 51,
“38F / 48F
Density
Decoder”
on
Decoder”
on
on
details)
page 101
for details)
page 101
for details)
page 100
for details)
November 2007
Order Number: 290701-18
Datasheet
99
Numonyx™ Wireless Flash Memory (W18)
Table 50: 48F Type Stacked Components
PC
48F
4400
P0
V
B
0
0
Product Die/
Density
Configuration
Voltage/NOR
Flash CE#
Configuration
Parameter /
Mux
Configuration
Package
Designator
Product Line
Designator
NOR Flash
Product Family
Ballout
Identifier
Device
Details
PC =
Char 1 = Flash
die #1
Easy BGA,
RoHS
V =
B =
1.8 V Core
and 3 V I/O;
Virtual Chip
Enable
Char 2 = Flash
die #2
First character
applies to Flash
dies #1 and #2
RC =
Easy BGA,
Leaded
Bottom
0 =
Discrete
Ballout
parameter;
Non-Mux I/O
interface
Char 3 = Flash
die #3
0 =
Second character
applies to Flash
dies #3 and #4
Original
released
version of
this
JS =
TSOP, RoHS
(See
(See
(See
Table 53,
“Voltage /
NOR Flash
CE#
Table 5
Stacked
NOR Flash
only
Table 54,
“Paramete
r / Mux
Configurati
on
Char 4 = Flash
die #4
5,
“Ballout
Decoder
” on
TE =
TSOP,
Leaded
(See Table 52,
“NOR Flash
Family
product
Configurati
on
(See
page 10
2 for
Table 51,
“38F / 48F
Density
Decoder”
on
Decoder”
on
Decoder” on
page 101 for
details)
Decoder”
on
details)
PF =
page 101
for details)
page 101
for details)
SCSP, RoHS
page 100
for details)
RD =
SCSP,
Leaded
Table 51: 38F / 48F Density Decoder
Code
Flash Density
RAM Density
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
No Die
No Die
4-Mbit
32-Mbit
64-Mbit
128-Mbit
256-Mbit
512-Mbit
1-Gbit
8-Mbit
16-Mbit
32-Mbit
64-Mbit
128-Mbit
256-Mbit
512-Mbit
1-Gbit
2-Gbit
4-Gbit
8-Gbit
16-Gbit
32-Gbit
64-Gbit
128-Gbit
256-Gbit
512-Gbit
2-Gbit
4-Gbit
8-Gbit
16-Gbit
32-Gbit
64-Gbit
Datasheet
100
November 2007
Order Number: 290701-18
Numonyx™ Wireless Flash Memory (W18)
Table 52: NOR Flash Family Decoder
Code
Family
Marketing Name
C
C3
Numonyx Advanced+ Boot Block Flash Memory
Numonyx Embedded Flash Memory
Numonyx StrataFlash® Wireless Memory
Numonyx StrataFlash® Cellular Memory
Numonyx StrataFalsh® Embedded Memory
Numonyx Wireless Flash Memory
No Die
J3v.D
J
L
L18 / L30
M18
M
P
P30 / P33
W18 / W30
-
W
0(zero)
Table 53: Voltage / NOR Flash CE# Configuration Decoder
I/O Voltage
Code
Core Voltage (Volt)
CE# Configuration
Seperate Chip Enable per die
(Volt)
Z
3.0
1.8
3.0
3.0
1.8
3.0
3.0
1.8
3.0
1.8
1.8
3.0
1.8
1.8
3.0
1.8
1.8
3.0
Seperate Chip Enable per die
Seperate Chip Enable per die
Virtual Chip Enable
Virtual Chip Enable
Virtual Chip Enable
Virtual Address
Y
X
V
U
T
R
Q
P
Virtual Address
Virtual Address
Table 54: Parameter / Mux Configuration Decoder
Code, Mux
Identification
Number of Flash Die
Bus Width
Flash Die 1
Flash Die 2
Flash Die 3
Flash Die 4
0 = Non Mux
1 = AD Mux1
2= AAD Mux
Any
NA
Notation used for stacks that contain no parameter blocks
3 =Full" AD
Mux2
1
2
3
4
2
4
Bottom
Bottom
Bottom
Bottom
Bottom
Bottom
-
-
-
Top
-
-
B = Non Mux
C = AD Mux
F = "Full" Ad
Mux
X16
X32
Bottom
Top
Top
Bottom
-
-
Top
-
Bottom
Bottom
Top
Top
November 2007
Order Number: 290701-18
Datasheet
101
Numonyx™ Wireless Flash Memory (W18)
Table 54: Parameter / Mux Configuration Decoder
Code, Mux
Identification
Number of Flash Die
Bus Width
Flash Die 1
Flash Die 2
Flash Die 3
Flash Die 4
1
2
3
4
2
4
Top
-
-
-
-
-
-
Top
Top
Top
Top
Top
Bottom
Top
T = Non Mux
U = AD Mux
X16
Bottom
Top
W = "Full" Ad
Mux
Bottom
Top
Bottom
-
-
X32
Top
Bottom
Bottom
1. Only Flash is Muxed and RAM is non-Muxed
2. Both Flash and RAM are AD-Muxed
Table 55: Ballout Decoder
Code
Ballout Definition
0 (Zero)
SDiscrete ballout (Easay BGA and TSOP)
B
x16D ballout, 105 ball (x16 NOR + NAND + DRAM Share Bus)
x16C ballout, 107 ball (x16 NOR + NAND + PSRAM Share Bus)
QUAD/+ ballout, 88 ball (x16 NOR + PSRAM Share Bus)
x32SH ballout, 106 ball (x32 NOR only Share Bus)
C
Q
U
V
x16SB ballout, 165 ball (x16 NOR / NAND + x16 DRAM Split Bus
x48D ballout, 165 ball (x16/x32 NOR + NAND + DRAM Split Bus
W
Datasheet
102
November 2007
Order Number: 290701-18
相关型号：
©2020 ICPDF网 联系我们和版权申明