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08051J0R5BS [NXP]

RF LDMOS Integrated Power Amplifier;

08051J0R5BS


元器件型号：	08051J0R5BS
生产厂家：	NXP Semiconductors
描述和应用：	RF LDMOS Integrated Power Amplifier
PDF文件：	总12页 (文件大小：726K)
下载文档：	下载PDF数据表文档文件
型号参数：08051J0R5BS参数

08051J0R9BBT

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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27 FREESCALE

08051J0R9QBTTR

Film Capacitor, Silicon Dioxide And Nitride, 100V, 3.3333% +Tol, 3.3333% -Tol, -/+30ppm/Cel TC, 0.0000009uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT

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1 AVX

08051J1R0BBT

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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16 FREESCALE

08051J1R0BS

RF LDMOS Integrated Power Amplifier

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2 NXP

08051J1R2BBT

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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15 FREESCALE

08051J2R1BBTTR

Film Capacitor, Silicon Dioxide And Nitride, 100V, 4.7619% +Tol, 4.7619% -Tol, -/+30ppm/Cel TC, 0.0000021uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT

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0 AVX

08051J2R1CBTTR

Film Capacitor, Silicon Dioxide And Nitride, 100V, 11.9048% +Tol, 11.9048% -Tol, -/+30ppm/Cel TC, 0.0000021uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT

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0 AVX

08051J2R2BS

RF LDMOS Integrated Power Amplifier

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2 NXP

08051J2R2CBTTR

Film Capacitor, Silicon Dioxide And Nitride, 100V, 11.3636% +Tol, 11.3636% -Tol, -/+30ppm/Cel TC, 0.0000022uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT

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1 AVX

08051J2R3ABTTR

Film Capacitor, Silicon Dioxide And Nitride, 100V, 2.1739% +Tol, 2.1739% -Tol, -/+30ppm/Cel TC, 0.0000023uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT

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0 AVX

08051J3R9BBT

Gallium Arsenide PHEMT RF Power Field Effect Transistor

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35 FREESCALE

08051J4R4BBTTR

Film Capacitor, Silicon Dioxide And Nitride, 100V, 2.2727% +Tol, 2.2727% -Tol, -/+30ppm/Cel TC, 0.0000044uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT

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0 AVX

08051J4R4CBTTR

Film Capacitor, Silicon Dioxide And Nitride, 100V, 5.6818% +Tol, 5.6818% -Tol, -/+30ppm/Cel TC, 0.0000044uF, Surface Mount, 0805, CHIP, ROHS COMPLIANT

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0 AVX

08051J4R7AASTR

Thin-Film Technology

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20 AVX

08051J4R7AATTR

Thin-Film Technology

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25 AVX

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