首页 |元器件品牌

08051J1R5BBS [NXP]

Gallium Arsenide pHEMT RF Power Field Effect Transistor;
08051J1R5BBS
型号： 08051J1R5BBS
厂家： NXP    NXP
描述：

Gallium Arsenide pHEMT RF Power Field Effect Transistor
文件： 总25页 (文件大小：1134K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Document Number: MRFG35010AN  
Rev. 4, 8/2013  
Freescale Semiconductor  
Technical Data  
Gallium Arsenide pHEMT  
RF Power Field Effect Transistor  
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized  
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB  
customer premise equipment (CPE) applications.  
MRFG35010ANT1  
Typical Single--Carrier W--CDMA Performance: VDD = 12 Vdc, IDQ = 130 mA,  
3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%  
Probability on CCDF.  
500--5000 MHz, 9 W, 12 V  
POWER FET  
GaAs pHEMT  
Frequency  
(MHz)  
P
(W)  
G
ACPR  
(dBc)  
D
IRL  
(dB)  
out  
ps  
(dB)  
14.5  
13.0  
11.5  
(%)  
24.0  
25.0  
30.0  
750  
2140  
2650  
1
--44.0  
--43.0  
--43.0  
-- 1 5  
-- 1 4  
-- 1 5  
1
1
Features  
9 Watts P1dB @ 3550 MHz, CW  
Excellent Phase Linearity and Group Delay Characteristics  
High Efficiency and High Linearity  
PLD--1.5  
PLASTIC  
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
dBm  
C  
Drain--Source Voltage  
Gate--Source Voltage  
RF Input Power  
V
15  
-- 5  
DSS  
V
GS  
P
33  
in  
Storage Temperature Range  
T
stg  
--65 to +150  
175  
(1)  
Channel Temperature  
T
ch  
C  
Table 2. Thermal Characteristics  
(2)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
6.5  
C/W  
JC  
Case Temperature 77C, 1 W CW  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
Table 4. Moisture Sensitivity Level  
Test Methodology  
2
A
IV  
Rating  
Package Peak Temperature  
Unit  
Per JESD22--A113, IPC/JEDEC J--STD--020  
3
260  
C  
1. For reliable operation, the operating channel temperature should not exceed 150C.  
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
Freescale Semiconductor, Inc., 2006, 2008--2009, 2012--2013. All rights reserved.  
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Saturated Drain Current  
(V = 3.5 Vdc, V = 0 Vdc)  
I
—
2.9  
—
Adc  
DSS  
GSS  
DSO  
DS  
GS  
Off State Leakage Current  
(V = --0.4 Vdc, V = 0 Vdc)  
I
—
—
< 1  
0.1  
100  
1
Adc  
mAdc  
mAdc  
Vdc  
GS  
DS  
Off State Drain Current  
I
(V = 12 Vdc, V = --2.2 Vdc)  
DS  
GS  
Off State Current  
I
—
2
15  
DSX  
(V = 28.5 Vdc, V = --2.5 Vdc)  
DS  
GS  
Gate--Source Cut--off Voltage  
(V = 3.5 Vdc, I = 15 mA)  
V
-- 1 . 2  
-- 1 . 2  
-- 1 . 0  
--0.95  
-- 0 . 7  
-- 0 . 7  
GS(th)  
GS(Q)  
DS  
DS  
Quiescent Gate Voltage  
(V = 12 Vdc, I = 180 mA)  
V
Vdc  
DS  
DQ  
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 12 Vdc, I = 130 mA, P = 1 W Avg., f = 3550 MHz, Single--Carrier  
DD  
DQ  
out  
W--CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.  
PAR = 8.5 dB @ 0.01% Probability on CCDF.  
Power Gain  
G
9
10  
25  
—
—
dB  
%
ps  
D
Drain Efficiency  
η
23  
—
Adjacent Channel Power Ratio  
ACPR  
-- 4 3  
-- 4 0  
dBc  
Typical RF Performance (In Freescale Test Fixture, 50 hm system) V = 12 Vdc, I = 130 mA, f = 3550 MHz  
DD  
DQ  
Output Power, 1 dB Compression Point, CW  
P1dB  
—
9
—
W
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
2
C10 C9  
C14  
C13  
C11  
C12  
C8  
C7  
C15  
C16  
C17  
C18  
C6  
C5  
C19  
R1  
C4  
C20  
C3  
C1  
C2  
C22  
C21  
MRFG35010AN  
Rev. 6  
3500MHz -- 3600MHz  
Figure 1. MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz  
Table 6. MRFG35010ANT1 Test Circuit Component Designations and Values — 3550 MHz  
Part  
C1, C21, C22  
Description  
0.5 pF Chip Capacitors  
Part Number  
08051J0R5BBT  
Manufacturer  
AVX  
C2  
0.2 pF Chip Capacitor  
0.5 pF Chip Capacitor  
6.8 pF Chip Capacitors  
10 pF Chip Capacitors  
100 pF Chip Capacitors  
100 pF Chip Capacitors  
1000 pF Chip Capacitors  
0.1 F Chip Capacitors  
39K pF Chip Capacitors  
10 F, 50 V Chip Capacitors  
50 Chip Resistor  
06035J0R2BBT  
AVX  
C3  
06035J0R5BBT  
AVX  
C4, C19, C20  
C5, C18  
C6, C17  
C7, C16  
C8, C15  
C9, C14  
C10, C13  
C11, C12  
R1  
08051J6R8BBT  
AVX  
ATC100A100JP150XT  
ATC100A101JP150XT  
ATC100B101JP500XT  
ATC100B102JP50XT  
CDR33BX104AKWS  
ATC200B393KP50XT  
GRM55DR61H106KA88B  
P51ETR--ND  
ATC  
ATC  
ATC  
ATC  
Kemet  
ATC  
Murata  
Newark  
Rogers  
PCB  
0.020, = 3.5  
RO4350B  
r
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
3
V
V
DD  
GG  
C11  
C10  
C9  
C8  
C7  
C6  
C5  
C18  
C17  
C16  
C15 C14  
C13 C12  
C4  
C19  
Z9  
Z12  
R1  
RF  
INPUT  
RF  
OUTPUT  
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7 Z8  
Z10 Z11  
Z13  
Z14  
Z15 Z16  
Z17  
C3  
C20  
C1  
C2  
C22  
C21  
Figure 2. MRFG35010ANT1 Test Circuit Schematic — 3550 MHz  
Table 7. MRFG35010ANT1 Test Circuit Microstrips — 3550 MHz  
Microstrip  
Microstrip  
Z9  
Description  
Description  
Z1  
0.045x 0.689Microstrip  
0.045x 0.089Microstrip  
0.020x 0.360Microstrip  
0.045x 0.029Microstrip  
0.045x 0.061Microstrip  
0.045x 0.055Microstrip  
0.300x 0.125Microstrip  
0.146x 0.070Microstrip  
0.025x 0.485Microstrip  
0.400x 0.215Microstrip  
0.025x 0.497Microstrip  
0.025x 0.271Microstrip  
0.025x 0.363Microstrip  
0.025x 0.041Microstrip  
0.045x 0.050Microstrip  
0.045x 0.467Microstrip  
Z2  
Z11  
Z3  
Z12  
Z4  
Z13  
Z5  
Z14  
Z6  
Z15  
Z7  
Z16  
Z8, Z10  
Z17  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
4
TYPICAL CHARACTERISTICS — 3550 MHz  
50  
40  
12  
10  
G
V
= 12 Vdc, I = 130 mA, f = 3550 MHz  
DQ  
T
DD  
8
6
4
2
30  
20  
10  
0
Single--Carrier W--CDMA  
3.84 MHz Channel Bandwidth  
= 0.875 --131.0_  
= 0.849 --145.8_  
S
L
D
10  
15  
20  
25  
30  
35  
40  
P
, OUTPUT POWER (dBm)  
out  
Figure 3. Single--Carrier W--CDMA Power Gain  
and Drain Efficiency versus Output Power  
-- 1 0  
-- 2 0  
-- 3 0  
-- 4 0  
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
-- 3 0  
-- 3 5  
V
= 12 Vdc, I = 130 mA, f = 3550 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
= 0.875 --131.0_, = 0.849 --145.8_  
S
L
IRL  
-- 5 0  
-- 6 0  
ACPR  
15  
20  
25  
30  
35  
40  
P
, OUTPUT POWER (dBm)  
out  
Figure 4. Single--Carrier W--CDMA ACPR and  
Input Return Loss versus Output Power  
NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT.  
All data is generated from load pull, not from the test circuit shown.  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
5
TYPICAL CHARACTERISTICS — 3550 MHz  
14  
60  
V
= 12 Vdc, I = 130 mA, f = 3550 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01%  
Probability (CCDF)  
12  
10  
8
50  
40  
G
ps  
30  
20  
10  
0
6
4
2
D
20  
24  
28  
32  
36  
40  
P
, OUTPUT POWER (dBm)  
out  
Figure 5. Single--Carrier W--CDMA Power Gain  
and Drain Efficiency versus Output Power  
-- 1 0  
-- 5  
V
= 12 Vdc, I = 140 mA, f = 3550 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01%  
Probability (CCDF)  
-- 1 0  
-- 1 5  
-- 2 0  
-- 3 0  
IRL  
-- 2 0  
-- 2 5  
-- 3 0  
-- 4 0  
-- 5 0  
-- 6 0  
ACPR  
20  
25  
30  
35  
40  
P
, OUTPUT POWER (dBm)  
out  
Figure 6. Single--Carrier W--CDMA ACPR and  
Input Return Loss versus Output Power  
NOTE: Data is generated from the test circuit shown.  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
6
Z = 25   
o
Z
load  
Z
f = 3550 MHz  
source  
f = 3550 MHz  
V
= 12 Vdc, I = 130 mA, P = 1 W Avg.  
DQ out  
DD  
f
Z
Z
load  
source  
MHz  
3550  
4.0 -- j22.6  
4.5 -- j15.3  
Z
Z
=
=
Test circuit impedance as measured from  
gate to ground.  
source  
Test circuit impedance as measured  
from drain to ground.  
load  
Output  
Matching  
Network  
Device  
Under  
Test  
Input  
Matching  
Network  
Z
Z
source  
load  
Figure 7. Series Equivalent Source and Load Impedance — 3550 MHz  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
7
-- V  
+V  
DD  
GG  
C8 C7  
C12 C11  
C6  
C5  
C13  
C14  
C10  
C9  
C4  
C3  
C15  
C16  
R1  
L1  
L2  
C19  
C1  
C20  
Q1  
R2  
C18  
C17  
C2  
C21  
MRFG35010AN Rev. 2  
700MHz -- 900MHz  
Figure 8. MRFG35010ANT1 Test Circuit Component Layout — 750 MHz  
Table 8. MRFG35010ANT1 Test Circuit Component Designations and Values — 750 MHz  
Part  
Description  
100 pF Chip Capacitors  
Part Number  
ATC600F101JT250XT  
ATC600F100JT250XT  
ATC100A100JP150XT  
ATC100A101JP150XT  
ATC100B101JP500XT  
ATC100B102JP50XT  
CDR33BX104AKWS  
ATC200B393KP500XT  
T491X226K035AT  
Manufacturer  
ATC  
C1, C19  
C2  
10 pF Chip Capacitor  
ATC  
C3, C16  
C4, C15  
C5, C14  
C6, C13  
C7, C12  
C8, C11  
C9, C10  
C17  
10 pF Chip Capacitors  
100 pF Chip Capacitors  
100 pF Chip Capacitors  
1000 pF Chip Capacitors  
0.1 F Chip Capacitors  
39K pF Chip Capacitors  
22 F, 35 V Tantalum Capacitors  
1.8 pF Chip Capacitor  
6.8 pF Chip Capacitor  
22 pF Chip Capacitor  
ATC  
ATC  
ATC  
ATC  
AVX  
ATC  
Kemet  
ATC  
ATC600F1R8BT250XT  
ATC600F6R8BT250XT  
ATC600F220JT250XT  
ATC600F1R0BT250XT  
LL1608--FSL18NJ  
C18  
ATC  
C20  
ATC  
C21  
1 pF Chip Capacitor  
ATC  
L1, L2  
Q1  
18 nH Chip Inductors  
TOKO  
Freescale  
KOA Speer  
Kyocera  
Rogers  
Power FET GaAs Transistor  
51 , 1/10 W Chip Resistor  
4.7 , 1/10 W Chip Resistor  
MRFG35010ANT1  
RM73B1JT510J  
R1  
R2  
CR10--4R7J--T  
PCB  
0.020, = 3.5  
RO4350B  
r
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
8
V
V
GG  
DD  
+
+
C9  
C8  
C7  
C6  
C5  
C14  
C13  
C12  
C11  
C10  
C4  
C15  
C16  
C3  
Z8  
R1  
Z11  
L2  
RF  
INPUT  
L1  
RF  
OUTPUT  
C20  
R2  
Z1  
Z2  
Z3 Z4  
Z5  
Z6 Z7  
C21  
Z9 Z10  
Z12  
Z13  
Z14  
Z15  
C1  
C19  
C2  
C17  
C18  
Figure 9. MRFG35010ANT1 Test Circuit Schematic — 750 MHz  
Table 9. MRFG35010ANT1 Test Circuit Microstrips — 750 MHz  
Microstrip  
Microstrip  
Z8  
Description  
Description  
Z1  
0.045x 0.633Microstrip  
0.045x 0.044Microstrip  
0.045x 0.422Microstrip  
0.090x 0.030Microstrip  
0.110x 0.050Microstrip  
0.285x 0.200Microstrip  
0.146x 0.070Microstrip  
0.025x 0.155Microstrip  
0.325x 0.255Microstrip  
0.025x 0.168Microstrip  
0.045x 0.080Microstrip  
0.045x 0.600Microstrip  
0.045x 0.089Microstrip  
0.045x 0.400Microstrip  
Z2  
Z10  
Z3  
Z11  
Z4  
Z12  
Z5  
Z13  
Z6  
Z14  
Z7, Z9  
Z15  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
9
TYPICAL CHARACTERISTICS — 750 MHz  
10  
20  
15  
10  
5
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
DD  
DD  
5
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
-- 3 0  
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
500  
1000  
1500  
2000  
2500  
3000  
3500  
500  
1000  
1500  
2000  
2500  
3000  
3500  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 11. Input Return Loss versus Frequency  
Figure 10. Small--Signal Gain versus Frequency  
10  
5
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
DD  
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
-- 3 0  
500  
1000  
1500  
2000  
2500  
3000  
3500  
f, FREQUENCY (MHz)  
Figure 12. Output Return Loss versus Frequency  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
10  
TYPICAL CHARACTERISTICS — 750 MHz  
18  
60  
V
= 12 Vdc, I = 130 mA, f = 750 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01%Probability (CCDF)  
16  
14  
12  
50  
40  
G
ps  
30  
20  
10  
0
10  
8
D
6
20  
25  
30  
, OUTPUT POWER (dBm)  
35  
40  
P
out  
Figure 13. Single--Carrier W--CDMA Power Gain  
and Drain Efficiency versus Output Power  
-- 1 0  
-- 5  
V
= 12 Vdc, I = 130 mA, f = 750 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)  
-- 1 0  
-- 1 5  
-- 2 0  
-- 3 0  
IRL  
-- 2 0  
-- 2 5  
-- 3 0  
-- 4 0  
-- 5 0  
-- 6 0  
ACPR  
20  
25  
30  
35  
40  
P
, OUTPUT POWER (dBm)  
out  
Figure 14. Single--Carrier W--CDMA ACPR and  
Input Return Loss versus Output Power  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
11  
-- V  
+V  
DD  
GG  
C7  
C8  
C12 C11  
C9  
C10  
C13  
C14  
C6  
C5  
C4  
C15  
C16  
C3  
R1  
C17  
C1  
L2  
L1  
Q1  
C2  
RF IN  
RF OUT  
C18  
MRFG35010AN  
Rev. 0  
2100MHz -- 2200MHz  
Figure 15. MRFG35010ANT1 Test Circuit Component Layout — 2140 MHz  
Table 10. MRFG35010ANT1 Test Circuit Component Designations and Values — 2140 MHz  
Part  
Description  
4.7 pF Chip Capacitor  
Part Number  
080514R7BBS  
Manufacturer  
AVX  
C1  
C2  
0.5 pF Chip Capacitor  
10 pF Chip Capacitors  
100 pF Chip Capacitors  
100 pF Chip Capacitors  
1000 pF Chip Capacitors  
0.1 F Chip Capacitors  
39K pF Chip Capacitors  
22 F, 35 V Tantalum Capacitors  
15 pF Chip Capacitor  
1.5 pF Chip Capacitor  
3.9 nH Inductor  
08051J0R5BBS  
AVX  
C3, C16  
C4, C15  
C5, C14  
C6, C13  
C7, C12  
C8, C11  
C9, C10  
C17  
ATC100A100JP150XT  
ATC100A101JP150XT  
ATC100B101JP500XT  
ATC100B102JP50XT  
CDR33BX104AKWS  
ATC200B393KP500XT  
T491X226K035AT  
08051J150GBS  
ATC  
ATC  
ATC  
ATC  
AVX  
ATC  
Kemet  
AVX  
C18  
08051J1R5BBS  
AVX  
L1  
LL1608--FH3N9S  
LL1608--FH8N2S  
MRFG35010ANT1  
ERJ--6GEYJ750V  
RO4350B  
TOKO  
TOKO  
Freescale  
Panasonic  
Rogers  
L2  
8.2 nH Inductor  
Q1  
Power FET GaAs Transistor  
75 , 1/8 W Chip Resistor  
R1  
PCB  
0.020, = 3.5  
r
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
12  
V
V
GG  
DD  
+
+
C9  
C8  
C7  
C6  
C5  
C14  
C13  
C12  
C11  
C10  
C4  
C15  
C16  
C3  
R1  
Z8  
L2  
L1  
RF  
INPUT  
RF  
OUTPUT  
Z1  
Z2  
Z3  
C2  
Z5  
Z6  
Z7  
Z9  
Z10  
Z12 Z13  
Z14  
Z4  
Z11  
C1  
C19  
C18  
Figure 16. MRFG35010ANT1 Test Circuit Schematic — 2140 MHz  
Table 11. MRFG35010ANT1 Test Circuit Microstrips — 2140 MHz  
Microstrip  
Microstrip  
Z7, Z9  
Z8  
Description  
Description  
Z1, Z14  
Z2  
0.045x 0.295Microstrip  
0.045x 0.224Microstrip  
0.045x 0.515Microstrip  
0.105x 0.045Microstrip  
0.045x 0.023Microstrip  
0.450x 0.312Microstrip  
0.146x 0.070Microstrip  
0.045x 0.098Microstrip  
0.200x 0.040Microstrip  
0.260x 0.020Microstrip  
0.200x 0.632Microstrip  
0.045x 0.420Microstrip  
Z3  
Z10  
Z4  
Z11  
Z5  
Z12  
Z6  
Z13  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
13  
TYPICAL CHARACTERISTICS — 2140 MHz  
10  
20  
15  
10  
5
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
DD  
DD  
5
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
-- 3 0  
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
500  
1000  
1500  
2000  
2500  
3000  
3500  
500  
1000  
1500  
2000  
2500  
3000  
3500  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 18. Input Return Loss versus Frequency  
Figure 17. Small--Signal Gain versus Frequency  
10  
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
DD  
5
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
-- 3 0  
500  
1000  
1500  
2000  
2500  
3000  
3500  
f, FREQUENCY (MHz)  
Figure 19. Output Return Loss versus Frequency  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
14  
TYPICAL CHARACTERISTICS — 2140 MHZ  
18  
60  
V
= 12 Vdc, I = 130 mA, f = 2140 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz  
Channel Bandwidth  
16  
14  
12  
50  
40  
Input Signal PAR = 8.5 dB @ 0.01%  
Probability (CCDF)  
G
ps  
30  
20  
10  
0
10  
8
D
6
20  
25  
30  
, OUTPUT POWER (dBm)  
35  
40  
P
out  
Figure 20. Single--Carrier W--CDMA Power Gain  
and Drain Efficiency versus Output Power  
--  
-- 5  
-- 1 0  
V
= 12 Vdc, I = 140 mA, f = 2140 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)  
-- 1 0  
-- 1 5  
-- 2 0  
-- 3 0  
IRL  
-- 2 0  
-- 2 5  
-- 3 0  
-- 4 0  
-- 5 0  
-- 6 0  
ACPR  
20  
25  
30  
35  
40  
P
, OUTPUT POWER (dBm)  
out  
Figure 21. Single--Carrier W--CDMA ACPR and  
Input Return Loss versus Output Power  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
15  
-- V  
+V  
DD  
GG  
C7  
C8  
C12 C11  
C9  
C10  
C13  
C14  
C6  
C5  
C4  
C15  
C16  
C3  
R1  
C17 C21  
RF OUT  
C18 L1  
L2  
C1  
Q1  
C2*  
C20  
C19  
RF IN  
MRFG35010AN  
Rev. 0  
2600MHz -- 2700MHz  
Note: Component number C2* is labeled on board but not placed.  
Figure 22. MRFG35010ANT1 Test Circuit Component Layout — 2650 MHz  
Table 12. MRFG35010ANT1 Test Circuit Component Designations and Values — 2650 MHz  
Part  
Description  
4.7 pF Chip Capacitor  
Part Number  
080514R7BBS  
Manufacturer  
C1  
AVX  
C2  
Component Not Placed  
10 pF Chip Capacitors  
100 pF Chip Capacitors  
100 pF Chip Capacitors  
1000 pF Chip Capacitors  
0.1 F Chip Capacitors  
39K pF Chip Capacitors  
22 F, 35 V Tantalum Capacitors  
15 pF Chip Capacitor  
0.5 pF Chip Capacitor  
1.5 pF Chip Capacitor  
1 pF Chip Capacitor  
C3, C16  
C4, C15  
C5, C14  
C6, C13  
C7, C12  
C8, C11  
C9, C10  
C17  
ATC100A100JP150XT  
ATC100A101JP150XT  
ATC100B101JP500XT  
ATC100B102JP50XT  
CDR33BX104AKWS  
ATC200B393KP500XT  
T491X226K035AT  
08051J150GBS  
ATC  
ATC  
ATC  
ATC  
AVX  
ATC  
Kemet  
AVX  
C18  
08051J0R5BBS  
AVX  
C19  
08051J1R5BBS  
AVX  
C20  
08051J1R0BBS  
AVX  
C21  
0.4 pF Chip Capacitor  
5.6 nH Inductor  
08051J0R4BBS  
AVX  
L1  
LL1608--FH5N6S  
LL1608--FH6N8S  
MRFG35010ANT1  
ERJ--6GEYJ750V  
RO4350B  
TOKO  
TOKO  
Freescale  
Panasonic  
Rogers  
L2  
6.8 nH Inductor  
Q1  
Power FET GaAs Transistor  
75 , 1/8 W Chip Resistor  
R1  
PCB  
0.020, = 3.5  
r
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
16  
V
V
GG  
DD  
+
+
C9  
C8  
C7  
C6  
C5  
C14  
C13  
C12  
C11  
C10  
C4  
C15  
C16  
C3  
R1  
Z9  
L2  
L1  
RF  
INPUT  
RF  
OUTPUT  
Z1  
Z2  
Z3  
Z4  
C19  
Z6 Z7  
Z8  
Z10  
Z11  
Z13 Z14  
Z15  
Z16  
Z17  
Z5  
Z12  
C1  
C17  
C18  
C20  
C21  
Figure 23. MRFG35010ANT1 Test Circuit Schematic — 2650 MHz  
Table 13. MRFG35010ANT1 Test Circuit Microstrips — 2650 MHz  
Microstrip  
Microstrip  
Z9  
Description  
Description  
Z1  
0.045x 0.295Microstrip  
0.045x 0.385Microstrip  
0.045x 0.077Microstrip  
0.045x 0.273Microstrip  
0.105x 0.045Microstrip  
0.045x 0.023Microstrip  
0.450x 0.312Microstrip  
0.146x 0.070Microstrip  
0.045x 0.098Microstrip  
0.200x 0.040Microstrip  
0.260x 0.020Microstrip  
0.200x 0.632Microstrip  
0.045x 0.348Microstrip  
0.045x 0.075Microstrip  
0.045x 0.150Microstrip  
0.045x 0.152Microstrip  
Z2  
Z11  
Z3  
Z12  
Z4  
Z13  
Z5  
Z14  
Z6  
Z15  
Z7  
Z16  
Z8, Z10  
Z17  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
17  
TYPICAL CHARACTERISTICS — 2650 MHz  
10  
20  
15  
10  
5
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
DD  
DD  
5
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
-- 3 0  
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
500  
1000  
1500  
2000  
2500  
3000  
3500  
500  
1000  
1500  
2000  
2500  
3000  
3500  
f, FREQUENCY (MHz)  
f, FREQUENCY (MHz)  
Figure 25. Input Return Loss versus Frequency  
Figure 24. Small--Signal Gain versus Frequency  
10  
5
V
= 12 Vdc, I = 130 mA, 25C  
DQ  
DD  
0
-- 5  
-- 1 0  
-- 1 5  
-- 2 0  
-- 2 5  
-- 3 0  
500  
1000  
1500  
2000  
2500  
3000  
3500  
f, FREQUENCY (MHz)  
Figure 26. Output Return Loss versus Frequency  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
18  
TYPICAL CHARACTERISTICS — 2650 MHZ  
18  
60  
V
= 12 Vdc, I = 130 mA, f = 2650 MHz  
DQ  
DD  
Single--Carrier W--CDMA  
3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01%  
Probability (CCDF)  
16  
14  
12  
50  
40  
30  
20  
10  
0
G
ps  
10  
8
D
6
20  
25  
30  
, OUTPUT POWER (dBm)  
35  
40  
P
out  
Figure 27. Single--Carrier W--CDMA Power Gain  
and Drain Efficiency versus Output Power  
-- 1 0  
-- 5  
V
= 12 Vdc, I = 140 mA, f = 2650 MHz  
DQ  
DD  
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth  
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)  
-- 1 0  
-- 1 5  
-- 2 0  
-- 3 0  
IRL  
-- 2 0  
-- 2 5  
-- 3 0  
-- 4 0  
-- 5 0  
-- 6 0  
ACPR  
20  
25  
30  
35  
40  
P
, OUTPUT POWER (dBm)  
out  
Figure 28. Single--Carrier W--CDMA ACPR and  
Input Return Loss versus Output Power  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
19  
0.146  
3.71  
0.095  
2.41  
0.115  
2.92  
0.115  
2.92  
0.020  
0.51  
inches  
mm  
Figure 29. PLD--1.5 Solder Footprint  
M10A  
N B  
YYWW  
Figure 30. Product Marking  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
20  
PACKAGE DIMENSIONS  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
21  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
22  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
23  
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS  
Refer to the following documents, software and tools to aid your design process.  
Application Notes  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
Software  
.s2p File  
RF High Power Model  
Development Tools  
Printed Circuit Boards  
Reference Designs  
W--CDMA Reference Design for 2.4--2.5 GHz, 900 mW MRFG35010ANT1 Device  
725--760 MHz, 1.0 W AVG., 12 V LTE Amplifier Lineup Reference Design  
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the  
Software & Tools tab on the part’s Product Summary page to download the respective tool.  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
1
May 2006  
Dec. 2008  
Initial Release of Data Sheet  
Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum  
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1  
Added Table 3, ESD Protection Characteristics, p. 1; renumbered subsequent tables  
2
3
June 2009  
Dec. 2012  
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing  
process as described in Product and Process Change Notification number, PCN13516, p. 1  
Added Typical Performance table, p. 1  
Table 3, ESD Protection Characteristics, removed the word ”Minimum” after the ESD class rating. ESD  
ratings are characterized during new product development but are not 100% tested during production. ESD  
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive  
devices, p. 1.  
Added Figs. 8, 15 and 22, Test Circuit Component Layout — 750 MHz, 2140 MHz and 2650 MHz, and  
Tables 8, 10 and 12, Test Circuit Component Designations and Values — 750 MHz, 2140 MHz and  
2650 MHz, p. 8, 12 and 16  
Added Figs. 9, 16 and 23, Test Circuit Schematic — 750 MHz, 2140 MHz and 2650 MHz, and Tables 9, 11  
and 13, Test Circuit Microstrips — 750 MHz, 2140 MHz and 2650 MHz, p. 9, 13 and 17  
Added Figs. 10, 17 and 24, Small--Signal Gain versus Frequency — 750 MHz, 2140 MHz and 2650 MHz,  
Figs. 11, 18 and 25, Input Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, and  
Figs. 12, 19 and 26, Output Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, p. 10,  
14 and 18  
Added Figs. 13, 20 and 27, Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output  
Power — 750 MHz, 2140 MHz and 2650 MHz, and Figs. 14, 21 and 28, Single--Carrier W--CDMA ACPR  
and Input Return Loss versus Output Power — 750 MHz, 2140 MHz and 2650 MHz, p. 11, 15 and 19  
4
Aug. 2013  
Modified data sheet to reflect tape and reel changes for PLD--1.5 package devices as described in Product  
and Process Change Notification number, PCN14498, p. 1  
Updated Fig. 1, MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz, to current test circuit  
component layout for MRFG35010ANT1 part, p. 3  
MRFG35010ANT1  
RF Device Data  
Freescale Semiconductor, Inc.  
24  
Information in this document is provided solely to enable system and software  
implementers to use Freescale products. There are no express or implied copyright  
licenses granted hereunder to design or fabricate any integrated circuits based on the  
information in this document.  
How to Reach Us:  
Home Page:  
freescale.com  
Web Support:  
freescale.com/support  
Freescale reserves the right to make changes without further notice to any products  
herein. Freescale makes no warranty, representation, or guarantee regarding the  
suitability of its products for any particular purpose, nor does Freescale assume any  
liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation consequential or incidental  
damages. “Typical” parameters that may be provided in Freescale data sheets and/or  
specifications can and do vary in different applications, and actual performance may  
vary over time. All operating parameters, including “typicals,” must be validated for  
each customer application by customer’s technical experts. Freescale does not convey  
any license under its patent rights nor the rights of others. Freescale sells products  
pursuant to standard terms and conditions of sale, which can be found at the following  
address: freescale.com/SalesTermsandConditions.  
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,  
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their  
respective owners.  
E 2006, 2008--2009, 2012--2013 Freescale Semiconductor, Inc.  
Document Number: MRFG35010AN  
Rev. 4, 8/2013  

相关型号：

08051J1R5BBTTR

 Thin Film Capacitor
KYOCERA AVX

08051J1R5BBTTR\500

 Thin Film Capacitor
KYOCERA AVX

08051J1R5CBTTR

 Thin Film Capacitor
KYOCERA AVX

08051J1R5CBTTR\500

 Thin Film Capacitor
KYOCERA AVX

08051J1R5PBTTR

 Thin Film Capacitor
KYOCERA AVX

08051J1R5PBTTR\500

 Thin Film Capacitor
KYOCERA AVX

08051J1R5QBTTR

 Thin Film Capacitor
KYOCERA AVX

08051J1R5QBTTR\500

 Thin Film Capacitor
KYOCERA AVX

08051J1R5ZBTTR

 Thin Film Capacitor
KYOCERA AVX

08051J1R5ZBTTR\500

 Thin Film Capacitor
KYOCERA AVX

08051J1R6ABTTR

 Thin Film Capacitor
KYOCERA AVX

08051J1R6ABTTR\500

 Thin Film Capacitor
KYOCERA AVX
©2020 ICPDF网 联系我们和版权申明