1N5817T/R [NXP]
1A, 20V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N5817T/R |
| 厂家： | 
NXP |
| 描述： | 1A, 20V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2 二极管 |
| 文件： | 总9页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
page
1N5817; 1N5818; 1N5819
Schottky barrier diodes
1996 May 03
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
FEATURES
DESCRIPTION
• Low switching losses
• Fast recovery time
• Guard ring protected
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar
technology, and encapsulated in SOD81 hermetically sealed glass packages
incorporating ImplotecTM(1) technology.
• Hermetically sealed leaded glass
(1) Implotec is a trademark of Philips.
package.
APPLICATIONS
k
a
handbook, 4 columns
• Low power, switched-mode power
supplies
MAM218
• Rectifying
Fig.1 Simplified outline (SOD81) and symbol.
• Polarity protection.
1996 May 03
2
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
1N5817
20
V
V
V
−
−
−
1N5818
30
40
1N5819
VRSM
VRRM
VRWM
non-repetitive peak reverse voltage
1N5817
24
36
48
V
V
V
−
−
−
1N5818
1N5819
repetitive peak reverse voltage
1N5817
20
30
40
V
V
V
−
−
−
1N5818
1N5819
crest working reverse voltage
1N5817
1N5818
1N5819
20
30
40
1
V
V
V
A
−
−
−
−
IF(AV)
IFSM
Tamb = 55 °C; Rth j-a = 100 K/W;
average forward current
note 1; VR(equiv) = 0.2 V; note 2
non-repetitive peak forward current
t = 8.3 ms half sine wave;
JEDEC method;
25
A
−
Tj = Tj max prior to surge: VR = 0
Tstg
Tj
storage temperature
junction temperature
+175
125
°C
°C
−65
−
Notes
1. Refer to SOD81 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
1996 May 03
3
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
ELECTRICAL CHARACTERISTICS
T
amb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
VF
VF
see Fig.2
1N5817
IF = 0.1 A
IF = 1 A
320
−
−
−
−
−
−
mV
450
750
mV
mV
IF = 3 A
forward voltage
1N5818
see Fig.2
IF = 0.1 A
330
550
875
−
−
−
−
−
−
mV
mV
mV
IF = 1 A
IF = 3 A
forward voltage
1N5819
see Fig.2
IF = 0.1 A
340
600
900
1
−
−
−
−
−
−
−
−
−
−
mV
mV
mV
mA
mA
IF = 1 A
IF = 3 A
IR
reverse current
VR = VRRMmax; note 1
VR = VRRMmax; Tj = 100 °C
VR = 4 V; f = 1 MHz
10
Cd
diode capacitance
1N5817
80
50
50
pF
pF
pF
−
−
−
−
−
−
1N5818
1N5819
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
K/W
Rth j-a
thermal resistance from junction to ambient
100
Note
1. Refer to SOD81 standard mounting conditions.
1996 May 03
4
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
GRAPHICAL DATA
MBE634
5
handbook, halfpage
I
F
o
(A)
o
T = 125
j
C
25
C
4
3
2
1
0
0
0.5
V
(V)
1
F
Fig.2 Typical forward voltage.
MBE642
1
2.5
2
1.57
a = 3
1.42
1
P
F(AV)
(W)
0.5
0
0
0.5
1
1.5
2
I
(A)
F(AV)
Fig.3 1N817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
1996 May 03
5
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
MBE641
1
a = 3
2.5
2 1.57
1.42
1
P
F(AV)
(W)
0.5
0
0
0.5
1
1.5
2
I
(A)
F(AV)
Fig.4 1N5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
MBE643
1
a = 3
2.5
2 1.57
1.42
1
P
F(AV)
(W)
0.5
0
0
0.5
1
1.5
2
I
(A)
F(AV)
Fig.5 1N5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
1996 May 03
6
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
MBG434
MBG435
200
0.20
handbook, halfpage
handbook, halfpage
T
j
( C)
P
R
o
V
V
(W)
RWM
RWM
δ = 0.2
V
δ = 0.5
R
V
RWM
150
100
0.15
δ = 0.2
0.10
0.05
V
V
R
RWM
δ = 0.5
50
0
0
0
0
10
20
10
20
V
(V)
V
(V)
R
R
Fig.6 1N5817. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
Fig.7 1N5817. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
MBG432
MBG437
200
0.20
handbook, halfpage
handbook, halfpage
P
T
j
( C)
R
V
V
o
(W)
0.15
RWM
δ = 0.5
RWM
V
R
δ = 0.2
150
100
50
V
RWM
δ = 0.2
0.10
0.05
0
V
V
R
RWM
δ = 0.5
0
0
10
20
30
0
10
20
30
V
(V)
V
(V)
R
R
Fig.8 1N5818. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
Fig.9 1N5818. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
1996 May 03
7
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
MBG436
MBG433
200
0.20
handbook, halfpage
handbook, halfpage
P
T
j
( C)
R
V
V
o
(W)
RWM
δ = 0.5
RWM
δ = 0.2
V
R
150
100
0.15
V
RWM
δ = 0.2
0.10
0.05
V
R
V
RWM
δ = 0.5
50
0
0
0
0
10
20
30
40
10
20
30
40
(V)
V
(V)
V
R
R
Fig.10 1N5819. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
Fig.11 1N5819. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
1996 May 03
8
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
PACKAGE OUTLINE
5 max
0.81
max
2.15
max
MBC051
28 min
3.8 max
28 min
Dimensions in mm.
Fig.12 SOD81.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03
9
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TYSEMI
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