1N916T/R [NXP]
DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode;
| 型号： | 1N916T/R |
| 厂家： | 
NXP |
| 描述： | DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 二极管 |
| 文件： | 总7页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
1N914; 1N916
High-speed diodes
1996 Sep 03
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The 1N914; 1N916 are high-speed switching diodes fabricated in planar
tecshnology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages. s
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 100 V
handbook, halfpage
k
a
• Repetitive peak forward current:
MAM246
max. 225 mA.
The diodes are type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
75
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
IF
see Fig.2; note 1
75
mA
mA
IFRM
IFSM
225
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
4
1
A
A
−
0.5
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
250
+200
175
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
mV
VF
IR
IF = 10 mA; see Fig.3
see Fig.5
−
1000
reverse current
VR = 20 V
−
−
−
25
5
nA
µA
µA
VR = 75 V
VR = 20 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
50
Cd
diode capacitance
1N914
−
−
4
2
pF
pF
1N916
trr
reverse recovery time
1N914
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
−
−
8
4
ns
ns
reverse recovery time
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
VALUE
240
UNIT
Rth j-tp
Rth j-a
K/W
K/W
500
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
GRAPHICAL DATA
MGD289
MBG464
100
600
handbook, halfpage
I
F
(mA)
I
F
(mA)
400
(1)
(2)
(3)
50
200
0
0
0
0
100
200
o
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
MGD006
MGD004
3
10
1.2
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.0
2
10
(1)
(2)
(3)
10
0.8
0.6
1
−1
10
−2
10
0.4
0
0
100
200
o
10
20
T ( C)
V
(V)
j
R
(1) VR = 75 V; maximum values.
(2) VR = 75 V; typical values.
(3) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
5
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
1996 Sep 03
Philips Semiconductors
Product specification
High-speed diodes
1N914; 1N916
PACKAGE OUTLINE
0.56
max
1.85
max
4.25
max
MLA428 - 1
25.4 min
25.4 min
Dimensions in mm.
Fig.9 SOD27 (DO-35).
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03
7
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