2N5064,112 [NXP]
2N5064;
| 型号： | 2N5064,112 |
| 厂家： | 
NXP |
| 描述： | 2N5064 栅 栅极 |
| 文件： | 总4页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Thyristor
sensitive gate
2N5064
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated sensitive gate
SYMBOL PARAMETER
MAX. UNIT
thyristor in
a
plastic envelope,
intended for use in general purpose
switching and phase control
applications. This device is intended
to be interfaced directly to
microcontrollers, logic integreated
circuits and other low power gate
trigger circuits.
VDRM
VRRM
IT(AV)
,
Repetitive peak off-state voltages
200
V
Average on-state current
RMS on-state current
0.5
0.8
10
A
A
A
IT(RMS)
ITSM
Non-repetitive peak on-state current
PINNING - TO92 variant
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
anode
a
k
2
gate
3
cathode
g
3
2 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VDRM, VRRM Repetitive peak off-state
voltages
-
200
V
IT(AV)
Average on-state current half sine wave
Tc ≤ 67 ˚C
-
-
-
-
0.51
0.255
0.8
A
A
A
A
Tc ≤ 102 ˚C
all conduction angles
IT(RMS)
ITRM
RMS on-state current
Repetitive peak on-state
current
8
ITSM
Non-repetitive peak
on-state current
half sine wave; Ta = 25 ˚C prior to surge;
-
10
A
t = 8.3 ms
t = 8.3 ms
I2t
IGM
I2t for fusing
-
0.4
1
5
5
0.1
0.01
150
125
A2s
A
V
V
W
W
˚C
˚C
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
Ta = 25˚C, tp = 300µs; f = 120 Hz
-
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
-
-
Ta = 25˚C
Ta = 25˚C, over any 16 ms period
-
-
-65
-65
October 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Thyristor
sensitive gate
2N5064
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-c
Thermal resistance
junction to case
see note:1
-
-
75
K/W
Rth j-a
Thermal resistance
junction to ambient
-
200
-
K/W
STATIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current
Tc = 25 ˚C
-
-
-
-
200
350
µA
µA
Tc = -65 ˚C
VD = VDRM(max); RL = 100 Ω; gate open
circuit
VD = 12 V; RGK = 1 kΩ
VD = 12 V; RGK = 1 kΩ
IT = 1.2 A peak; tp = 300 µs; δ ≤ 0.01
Tj = 25 ˚C
Tj = -65 ˚C
Tj = 125 ˚C
VD = VDRM(max); RL = 100 Ω; gate open
circuit
IL
IH
VT
VGT
Latching current
Holding current
On-state voltage
Gate trigger voltage
-
-
-
-
-
-
-
6
5
1.7
0.8
1.2
-
mA
mA
V
-
-
-
V
-
V
0.1
V
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max)
Tj = 25 ˚C
Tj = 125 ˚C
-
-
-
-
10
50
µA
µA
DYNAMIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 kΩ
ITM = 2 A; VD = VDRM(max); IG = 10 mA;
dIG/dt = 0.1 A/µs
VDM = 67% VDRM(max); Tj = 125 ˚C;
ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
-
-
-
25
2
-
-
-
V/µs
µs
off-state voltage
Gate controlled turn-on
time
tgt
tq
Circuit commutated
turn-off time
100
µs
1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of
a metal clamp over the curved surface.
October 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristor
sensitive gate
2N5064
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
2.54
0.66
0.56
1.6
4.2 max
4.8 max
5.2 max
2.5 max
12.7 min
0.48
0.40
0.40
min
3 2 1
Fig.1. TO92; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
October 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristor
sensitive gate
2N5064
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
4
Rev 1.200
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