600F3R0BT250XT [NXP]
RF Power LDMOS Transistor;
| 型号： | 600F3R0BT250XT |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistor |
| 文件： | 总9页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3V07H600--42N
Rev. 0, 08/2020
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 112 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 616 to
870 MHz.
A3V07H600--42N
717–768 MHz
616–870 MHz, 112 W Avg., 48 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQA = 900 mA, VGSB = VGSC = 1.0 Vdc(1), Pout = 112 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.(2)
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
717 MHz
742 MHz
768 MHz
(dB)
16.9
17.0
17.1
(%)
52.8
51.3
51.8
8.0
8.1
7.7
–30.7
–32.0
–32.4
616–870 MHz(3)
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
DQA = 900 mA, VGSB = VGSC = 1.1 Vdc(1), Pout = 112 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
OM--1230--6L
PLASTIC
I
G
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
616 MHz
632 MHz
650 MHz
717 MHz
732 MHz
750 MHz
840 MHz
850 MHz
860 MHz
870 MHz
(dB)
18.2
18.5
18.7
19.1
19.1
19.2
19.1
18.7
18.4
18.0
Carrier
45.4
47.1
47.7
44.4
43.4
42.9
44.9
43.9
42.8
41.7
7.7
7.7
7.8
8.3
8.5
8.5
8.1
8.1
8.0
7.8
–32.4
–31.9
–31.0
–36.2
–38.3
–39.5
–33.3
–32.7
–32.6
–32.4
RF /V
RF /V
outA DSA
1
2
3
6
5
4
inA GSA
RF /V
inB GSB
RF /V
outB DSB
Peaking 1
Peaking 2
RF /V
inC GSC
RF /V
outC DSC
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
1. V
= V
= peaking bias voltage.
GSC
GSB
2. All data measured in fixture with device soldered to heatsink.
3. Fixture designed with a wideband match.
Features
Advanced high performance in--package Doherty
Greater negative gate--source voltage range for improved Class C
operation
Designed for digital predistortion error correction systems
2020 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +105
–6.0, +10
55, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.28
C/W
JC
Case Temperature 88C, 112 W Avg., W--CDMA, 48 Vdc, I
= 900 mA,
DQA
V
= 1.0 Vdc, 742 MHz
GSB
Table 3. ESD Protection Characteristics
Test Methodology
Class
2
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C3
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 105 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 55 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 10 Vdc, V = 0 Vdc)
I
1
GS
DS
(4)
On Characteristics — Sides A, B and C
Gate Threshold Voltage
V
V
1.0
2.0
0.1
1.8
2.4
0.3
2.5
3.0
0.5
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 194 Adc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 900 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.9 Adc)
V
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
A3V07H600--42N
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= V
Max
Unit
(1)
Functional Tests (In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 900 mA, V
= 1.0 Vdc,
DD
DQA
GSB
GSC
P
= 112 W Avg., f = 717 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
15.7
43.0
57.0
—
16.9
49.5
19.0
—
dB
%
ps
D
Drain Efficiency
P
@ 3 dB Compression Point, CW
P3dB
59.0
—
dB
dBc
out
Adjacent Channel Power Ratio
ACPR
–34.8
–28.0
Wideband Ruggedness (In NXP Doherty Test Fixture, 50 ohm system) I
= 900 mA, V
= V
= 1.0 Vdc, f = 742 MHz, Additive White
GSC
DQA
GSB
Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 300 MHz at 55 Vdc, 229 W Avg. Modulated Output Power
(3 dB Input Overdrive from 112 W Avg. Modulated Output Power)
No Device Degradation
Typical Performance (In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 900 mA, V
= V
= 1.0 Vdc, 717–768 MHz
GSC
DD
DQA
GSB
Bandwidth
(2)
P
@ 3 dB Compression Point
P3dB
—
—
794
–16
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 717–768 MHz frequency range)
VBW Resonance Point
VBW
—
105
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 51 MHz Bandwidth @ P = 112 W Avg.
G
—
—
0.12
—
—
dB
out
F
Gain Variation over Temperature
G
0.001
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.014
—
dB/C
(–40C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
A3V07H600--42NR6
1. Part internally input matched.
OM--1230--6L
2. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A3V07H600--42N
RF Device Data
NXP Semiconductors
3
V
GGA
V
DDA
C14
C18
C12
C23
C11
C22
C13
C32
A3V07H600-42N
Rev. NB1
D126014
C8
R2
C29
C39
C25
C24
C35
C36
R1
C1
C5
C2
C3
C4
C28
C40
C37
Z1
C38
cut out
area
C31
C6
C27
C30
C7
C33
C34
C26
R3
C16
C15
C10
C9
C20
C21
C17
C19
V
GGB
V
DDB
aaa--038657
Figure 2. A3V07H600--42N Production Test Circuit Component Layout
Table 7. A3V07H600--42N Production Test Circuit Component Designations and Values
Part
Description
100 pF Chip Capacitor
Part Number
600F101JT250XT
Manufacturer
ATC
C1, C5, C10, C11, C12, C15, C32
C2, C33
C3
4.7 pF Chip Capacitor
600F4R7BT250XT
600F3R3BT250XT
600F3R0BT250XT
600F6R8BT250XT
C3225X7S1H106K
C4532X7S2A475M
C5750X7S2A106M
MCGPR100V227M16X26
GRM319R72A103KA01D
GRM319R72A104KA01D
600F5R6BT250XT
600F120JT250XT
600F150JT250XT
600F101JT250XT
600F8R2BT250XT
600F2R2BT250XT
600F3R9BT250XT
600F4R3BT250XT
C8A50Z4
ATC
3.3 pF Chip Capacitor
ATC
C4
3 pF Chip Capacitor
ATC
C6, C7
C8, C9
C13, C16
C14, C17
C18, C19
C20, C23
C21, C22
C24, C29, C31, C34
C25
6.8 pF Chip Capacitor
ATC
10 F Chip Capacitor
TDK
4.7 F Chip Capacitor
TDK
10 F Chip Capacitor
TDK
220 F, 100 V Electrolytic Capacitor
0.01 F Chip Capacitor
0.1 F Chip Capacitor
Multicomp
Murata
Murata
ATC
5.6 pF Chip Capacitor
12 pF Chip Capacitor
ATC
C26, C27
C28, C40
C30
15 pF Chip Capacitor
ATC
100 pF Chip Capacitor
8.2 pF Chip Capacitor
ATC
ATC
C35, C37
C36, C38
C39
2.2 pF Chip Capacitor
ATC
3.9 pF Chip Capacitor
ATC
4.3 pF Chip Capacitor
ATC
R1
50 , 10 W Termination Chip Resistor
3.9 , 1/4 W Chip Resistor
700–900 MHz, 90, 2 dB Asymmetric Coupler
Anaren
Vishay
RN2 Technologies
MTL
R2, R3
Z1
CRCW12063R90FKEA
CMX09A1P5
PCB
RO4360, 0.020, = 6.4
D126014
r
A3V07H600--42N
RF Device Data
NXP Semiconductors
4
PACKAGE INFORMATION
A3V07H600--42N
RF Device Data
NXP Semiconductors
5
A3V07H600--42N
RF Device Data
NXP Semiconductors
6
A3V07H600--42N
RF Device Data
NXP Semiconductors
7
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
Electromigration MTTF Calculator
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2020
Initial release of data sheet
A3V07H600--42N
RF Device Data
NXP Semiconductors
8
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E 2020 NXP B.V.
Document Number: A3V07H600--42N
Rev. 0, 08/2020
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