74AHC00D,112 [NXP]

74AHC(T)00 - Quad 2-input NAND gate SOIC 14-Pin;
74AHC00D,112
型号: 74AHC00D,112
厂家: NXP    NXP
描述:

74AHC(T)00 - Quad 2-input NAND gate SOIC 14-Pin

PC 光电二极管 逻辑集成电路
文件: 总14页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
74AHC00; 74AHCT00  
Quad 2-input NAND gate  
Rev. 04 — 28 April 2008  
Product data sheet  
1. General description  
The 74AHC00; 74AHCT00 is a high-speed Si-gate CMOS device and is pin compatible  
with Low-power Schottky TTL (LSTTL). It is specified in compliance with JEDEC  
standard No. JESD7-A.  
The 74AHC00; 74AHCT00 provides the quad 2-input NAND function.  
2. Features  
I Balanced propagation delays  
I All inputs have Schmitt-trigger actions  
I Inputs accept voltages higher than VCC  
I Input levels:  
N For 74AHC00: CMOS level  
N For 74AHCT00: TTL level  
I ESD protection:  
N HBM EIA/JESD22-A114E exceeds 2000 V  
N MM EIA/JESD22-A115-A exceeds 200 V  
N CDM EIA/JESD22-C101C exceeds 1000 V  
I Multiple package options  
I Specified from 40 °C to +85 °C and from 40 °C to +125 °C  
3. Ordering information  
Table 1.  
Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74AHC00  
74AHC00D  
40 °C to +125 °C  
40 °C to +125 °C  
40 °C to +125 °C  
SO14  
plastic small outline package; 14 leads;  
body width 3.9 mm  
SOT108-1  
SOT402-1  
SOT762-1  
74AHC00PW  
74AHC00BQ  
TSSOP14  
plastic thin shrink small outline package; 14 leads;  
body width 4.4 mm  
DHVQFN14 plastic dual in-line compatible thermal enhanced very  
thin quad flat package; no leads; 14 terminals;  
body 2.5 × 3 × 0.85 mm  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
Table 1.  
Ordering information …continued  
Type number  
Package  
Temperature range Name  
Description  
Version  
74AHCT00  
74AHCT00D  
40 °C to +125 °C  
40 °C to +125 °C  
40 °C to +125 °C  
SO14  
plastic small outline package; 14 leads;  
body width 3.9 mm  
SOT108-1  
SOT402-1  
SOT762-1  
74AHCT00PW  
74AHCT00BQ  
TSSOP14  
plastic thin shrink small outline package; 14 leads;  
body width 4.4 mm  
DHVQFN14 plastic dual in-line compatible thermal enhanced very  
thin quad flat package; no leads; 14 terminals;  
body 2.5 × 3 × 0.85 mm  
4. Functional diagram  
1
3
&
&
&
1
2
1A  
1B  
2
1Y  
2Y  
3Y  
3
6
8
4
5
4
5
2A  
2B  
6
9
9
3A  
8
10 3B  
10  
A
B
12 4A  
13 4B  
12  
13  
4Y 11  
Y
11  
&
mna211  
mna212  
mna246  
Fig 1. Logic symbol  
Fig 2. IEC logic symbol  
Fig 3. Logic diagram (one gate)  
5. Pinning information  
5.1 Pinning  
terminal 1  
index area  
2
3
4
5
6
13  
12  
11  
10  
9
1B  
4B  
4A  
4Y  
3B  
3A  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
1A  
1B  
V
CC  
1Y  
2A  
2B  
2Y  
4B  
4A  
4Y  
3B  
3A  
3Y  
00  
1Y  
2A  
00  
(1)  
GND  
2B  
2Y  
8
GND  
001aac939  
001aac938  
Transparent top view  
(1) The die substrate is attached to this pad using  
conductive die attach material. It can not be used as a  
supply pin or input.  
Fig 4. Pin configuration SO14 and TSSOP14  
Fig 5. Pin configuration DHVQFN14  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
2 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
5.2 Pin description  
Table 2.  
Symbol  
1A  
Pin description  
Pin  
1
Description  
data input  
1B  
2
data input  
1Y  
3
data output  
data input  
2A  
4
2B  
5
data input  
2Y  
6
data output  
ground (0 V)  
data output  
data input  
GND  
3Y  
7
8
3A  
9
3B  
10  
11  
12  
13  
14  
data input  
4Y  
data output  
data input  
4A  
4B  
data input  
VCC  
supply voltage  
6. Functional description  
Table 3.  
Function selection[1]  
Input  
nA  
L
Output  
nB  
X
nY  
H
X
L
H
H
H
L
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
3 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
7. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
0.5  
0.5  
20  
20  
25  
-
Max  
+7.0  
+7.0  
-
Unit  
V
VCC  
VI  
supply voltage  
input voltage  
V
[1]  
[1]  
IIK  
input clamping current  
output clamping current  
output current  
VI < 0.5 V  
mA  
mA  
mA  
mA  
mA  
°C  
IOK  
IO  
VO < 0.5 V or VO > VCC + 0.5 V  
VO = 0.5 V to (VCC + 0.5 V)  
+20  
+25  
+75  
-
ICC  
IGND  
Tstg  
Ptot  
supply current  
ground current  
75  
65  
-
storage temperature  
total power dissipation  
+150  
500  
[2]  
Tamb = 40 °C to +125 °C  
mW  
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] For SO14 packages: above 70 °C the value of Ptot derates linearly at 8 mW/K.  
For TSSOP14 packages: above 60 °C the value of Ptot derates linearly at 5.5 mW/K.  
For DHVQFN14 packages: above 60 °C the value of Ptot derates linearly at 4.5 mW/K.  
8. Recommended operating conditions  
Table 5.  
Symbol  
74AHC00  
VCC  
Operating conditions  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
supply voltage  
input voltage  
2.0  
5.0  
5.5  
V
VI  
0
-
5.5  
V
VO  
output voltage  
ambient temperature  
0
-
VCC  
+125  
100  
20  
V
Tamb  
40  
+25  
°C  
ns/V  
ns/V  
t/V  
input transition rise and fall rate VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
-
-
-
-
74AHCT00  
VCC  
supply voltage  
4.5  
0
5.0  
5.5  
V
VI  
input voltage  
-
5.5  
V
VO  
output voltage  
0
-
VCC  
+125  
20  
V
Tamb  
t/V  
ambient temperature  
40  
-
+25  
-
°C  
ns/V  
input transition rise and fall rate VCC = 4.5 V to 5.5 V  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
4 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
9. Static characteristics  
Table 6.  
Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
25 °C  
40 °C to +85 °C 40 °C to +125 °C Unit  
Min Typ Max  
Min  
Max  
Min  
Max  
74AHC00  
VIH  
HIGH-level input VCC = 2.0 V  
1.5  
-
-
-
-
-
-
-
-
1.5  
-
-
1.5  
-
-
V
V
V
V
V
V
voltage  
VCC = 3.0 V  
2.1  
2.1  
2.1  
VCC = 5.5 V  
3.85  
-
3.85  
-
3.85  
-
VIL  
LOW-level input VCC = 2.0 V  
-
-
-
0.5  
0.9  
1.65  
-
-
-
0.5  
0.9  
1.65  
-
-
-
0.5  
0.9  
1.65  
voltage  
VCC = 3.0 V  
VCC = 5.5 V  
VOH  
HIGH-level  
VI = VIH or VIL  
output voltage  
IO = 50 µA; VCC = 2.0 V  
IO = 50 µA; VCC = 3.0 V  
IO = 50 µA; VCC = 4.5 V  
1.9 2.0  
2.9 3.0  
4.4 4.5  
-
-
-
-
-
1.9  
2.9  
-
-
-
-
-
1.9  
2.9  
-
-
-
-
-
V
V
V
V
V
4.4  
4.4  
IO = 4.0 mA; VCC = 3.0 V 2.58  
IO = 8.0 mA; VCC = 4.5 V 3.94  
-
-
2.48  
3.80  
2.40  
3.70  
VOL  
LOW-level output VI = VIH or VIL  
voltage  
IO = 50 µA; VCC = 2.0 V  
-
-
-
-
-
-
0
0
0
-
0.1  
0.1  
-
-
-
-
-
-
0.1  
0.1  
-
-
-
-
-
-
0.1  
0.1  
V
IO = 50 µA; VCC = 3.0 V  
IO = 50 µA; VCC = 4.5 V  
IO = 4.0 mA; VCC = 3.0 V  
IO = 8.0 mA; VCC = 4.5 V  
VI = 5.5 V or GND;  
V
0.1  
0.1  
0.1  
V
0.36  
0.36  
0.1  
0.44  
0.44  
1.0  
0.55  
0.55  
2.0  
V
-
V
II  
input leakage  
current  
-
µA  
V
CC = 0 V to 5.5 V  
VI = VCC or GND; IO = 0 A;  
CC = 5.5 V  
input capacitance VI = VCC or GND  
ICC  
CI  
supply current  
-
-
-
2.0  
10  
-
-
20  
10  
-
-
40  
10  
µA  
V
3.0  
pF  
74AHCT00  
VIH  
HIGH-level input VCC = 4.5 V to 5.5 V  
voltage  
2.0  
-
-
-
-
2.0  
-
-
2.0  
-
-
V
V
VIL  
LOW-level input VCC = 4.5 V to 5.5 V  
voltage  
0.8  
0.8  
0.8  
VOH  
HIGH-level  
VI = VIH or VIL; VCC = 4.5 V  
output voltage  
IO = 50 µA  
4.4 4.5  
-
-
4.4  
-
-
4.4  
-
-
V
V
IO = 8.0 mA  
3.94  
-
3.80  
3.70  
VOL  
LOW-level output VI = VIH or VIL; VCC = 4.5 V  
voltage  
IO = 50 µA  
-
-
-
0
-
0.1  
0.36  
0.1  
-
-
-
0.1  
0.44  
1.0  
-
-
-
0.1  
0.55  
2.0  
V
IO = 8.0 mA  
V
II  
input leakage  
current  
VI = 5.5 V or GND;  
CC = 0 V to 5.5 V  
-
µA  
V
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
5 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
Table 6.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
25 °C  
40 °C to +85 °C 40 °C to +125 °C Unit  
Min Typ Max  
Min  
Max  
Min  
Max  
ICC  
supply current  
VI = VCC or GND; IO = 0 A;  
-
-
2.0  
-
20  
-
40  
µA  
VCC = 5.5 V  
ICC  
additional supply per input pin;  
-
-
1.35  
-
-
1.5  
10  
-
-
1.5  
10  
mA  
current  
VI = VCC 2.1 V;  
other pins at VCC or GND;  
IO = 0 A; VCC = 4.5 V to 5.5 V  
CI  
input capacitance VI = VCC or GND  
-
3.0  
10  
pF  
10. Dynamic characteristics  
Table 7.  
Dynamic characteristics  
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.  
Symbol Parameter  
Conditions  
25 °C  
40 °C to +85 °C 40 °C to +125 °C Unit  
Min Typ[1] Max  
Min  
Max  
Min  
Max  
74AHC00  
[2]  
tpd  
propagation  
delay  
nA, nB to nY; see Figure 6  
VCC = 3.0 V to 3.6 V  
CL = 15 pF  
-
-
4.5  
7.9  
1.0  
1.0  
9.5  
1.0  
1.0  
10.0  
14.5  
ns  
ns  
CL = 50 pF  
6.0 11.4  
13.0  
VCC = 4.5 V to 5.5 V  
CL = 15 pF  
-
-
-
3.2  
4.5  
7.0  
5.5  
7.5  
-
1.0  
1.0  
-
6.5  
8.5  
-
1.0  
1.0  
-
7.0  
9.5  
-
ns  
ns  
pF  
CL = 50 pF  
[3]  
[2]  
CPD  
power  
CL = 50 pF; fi = 1 MHz;  
VI = GND to VCC  
dissipation  
capacitance  
74AHCT00  
tpd  
propagation  
nA, nB to nY; see Figure 6  
VCC = 4.5 V to 5.5 V  
CL = 15 pF  
delay  
-
-
-
3.3  
4.5  
7.0  
6.9  
7.9  
-
1.0  
1.0  
-
8.0  
9.0  
-
1.0  
1.0  
-
9.0  
10.0  
-
ns  
ns  
pF  
CL = 50 pF  
[3]  
CPD  
power  
CL = 50 pF; fi = 1 MHz;  
VI = GND to VCC  
dissipation  
capacitance  
[1] Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V).  
[2] tpd is the same as tPLH and tPHL  
.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
Σ(CL × VCC2 × fo) = sum of the outputs.  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
6 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
11. Waveforms  
V
I
V
nA, nB input  
GND  
M
t
t
PLH  
PHL  
V
OH  
V
nY output  
M
V
OL  
001aah088  
Measurement points are given in Table 8.  
VOL and VOH are typical voltage output levels that occur with the output load.  
Fig 6. Input to output propagation delays  
Table 8.  
Type  
Measurement points  
Input  
VM  
Output  
VM  
74AHC00  
0.5 × VCC  
1.5 V  
0.5 × VCC  
0.5 × VCC  
74AHCT00  
t
W
V
I
90 %  
negative  
pulse  
V
V
V
V
M
M
10 %  
GND  
t
t
r
f
t
t
f
r
V
I
90 %  
positive  
pulse  
M
M
10 %  
GND  
t
W
V
CC  
V
V
O
I
G
DUT  
R
T
C
L
001aah768  
Test data is given in Table 9.  
Definitions test circuit:  
RT = termination resistance should be equal to output impedance Zo of the pulse generator.  
CL = load capacitance including jig and probe capacitance.  
Fig 7. Load circuitry for measuring switching times  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
7 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
Table 9.  
Type  
Test data  
Input  
VI  
Load  
Test  
tr, tf  
CL  
74AHC00  
VCC  
3.0 V  
3.0 ns  
3.0 ns  
15 pF, 50 pF  
15 pF, 50 pF  
tPLH, tPHL  
tPLH, tPHL  
74AHCT00  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
8 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
12. Package outline  
SO14: plastic small outline package; 14 leads; body width 3.9 mm  
SOT108-1  
D
E
A
X
v
c
y
H
M
A
E
Z
8
14  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
7
e
detail X  
w
M
b
p
0
2.5  
scale  
5 mm  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
8.75  
8.55  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.75  
1.27  
0.05  
1.05  
0.25  
0.01  
0.25  
0.1  
0.25  
0.01  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.35  
0.014 0.0075 0.34  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches  
0.041  
0.01 0.004  
0.069  
Note  
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-19  
SOT108-1  
076E06  
MS-012  
Fig 8. Package outline SOT108-1 (SO14)  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
9 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm  
SOT402-1  
D
E
A
X
c
y
H
v
M
A
E
Z
8
14  
Q
(A )  
3
A
2
A
A
1
pin 1 index  
θ
L
p
L
1
7
detail X  
w
M
b
p
e
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(2)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
Z
θ
1
2
3
p
E
p
max.  
8o  
0o  
0.15  
0.05  
0.95  
0.80  
0.30  
0.19  
0.2  
0.1  
5.1  
4.9  
4.5  
4.3  
6.6  
6.2  
0.75  
0.50  
0.4  
0.3  
0.72  
0.38  
mm  
1.1  
0.65  
0.25  
1
0.2  
0.13  
0.1  
Notes  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-18  
SOT402-1  
MO-153  
Fig 9. Package outline SOT402-1 (TSSOP14)  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
10 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;  
14 terminals; body 2.5 x 3 x 0.85 mm  
SOT762-1  
B
A
D
A
A
1
E
c
detail X  
terminal 1  
index area  
C
terminal 1  
index area  
e
1
y
y
e
b
v
M
C
C
A
B
C
1
w
M
2
6
L
1
7
8
E
h
e
14  
13  
9
D
h
X
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
A
(1)  
(1)  
UNIT  
A
1
b
c
E
e
e
1
y
D
D
E
L
v
w
y
h
h
1
max.  
0.05 0.30  
0.00 0.18  
3.1  
2.9  
1.65  
1.35  
2.6  
2.4  
1.15  
0.85  
0.5  
0.3  
mm  
0.05  
0.1  
1
0.2  
0.5  
2
0.1  
0.05  
Note  
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
02-10-17  
03-01-27  
SOT762-1  
- - -  
MO-241  
- - -  
Fig 10. Package outline SOT762-1 (DHVQFN14)  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
11 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
13. Abbreviations  
Table 10. Abbreviations  
Acronym  
CDM  
CMOS  
DUT  
Description  
Charge Device Model  
Complementary Metal-Oxide Semiconductor  
Device Under Test  
ESD  
ElectroStatic Discharge  
HBM  
Human Body Model  
LSTTL  
MM  
Low-power Schottky Transistor-Transistor Logic  
Machine Model  
TTL  
Transistor-Transistor Logic  
14. Revision history  
Table 11. Revision history  
Document ID  
Release date  
20080428  
Data sheet status  
Change notice  
Supersedes  
74AHC_AHCT00_4  
Modifications:  
Product data sheet  
-
74AHC_AHCT00_3  
Table 6: the conditions for input leakage current have been changed.  
74AHC_AHCT00_3  
74AHC_AHCT00_2  
74AHC_AHCT00_1  
20080108  
19990923  
19981209  
Product data sheet  
Product specification  
Product specification  
-
-
-
74AHC_AHCT00_2  
74AHC_AHCT00_1  
-
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
12 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
15. Legal information  
15.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
15.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
15.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
15.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
16. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
74AHC_AHCT00_4  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 04 — 28 April 2008  
13 of 14  
74AHC00; 74AHCT00  
NXP Semiconductors  
Quad 2-input NAND gate  
17. Contents  
1
2
3
4
General description . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 1  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2  
5
5.1  
5.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3  
6
Functional description . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Recommended operating conditions. . . . . . . . 4  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6  
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12  
7
8
9
10  
11  
12  
13  
14  
15  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
15.1  
15.2  
15.3  
15.4  
16  
17  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 28 April 2008  
Document identifier: 74AHC_AHCT00_4  

相关型号:

74AHC00D-Q100

AHC/VHC/H/U/V SERIES, QUAD 2-INPUT NAND GATE, PDSO14, 3.90 MM, PLASTIC, MS-012, SOT108-1, SOP-14
NXP

74AHC00D-Q100

Quad 2-input NAND gate
NEXPERIA

74AHC00D-T

IC AHC/VHC/H/U/V SERIES, QUAD 2-INPUT NAND GATE, PDSO14, 3.90 MM, PLASTIC, MS-012, SOT108-1, SOP-14, Gate
NXP

74AHC00PW

Quad 2-input NAND gate
NXP

74AHC00PW

Quad 2-input NAND gateProduction
NEXPERIA

74AHC00PW,118

74AHC(T)00 - Quad 2-input NAND gate TSSOP 14-Pin
NXP

74AHC00PW-Q100

AHC/VHC/H/U/V SERIES, QUAD 2-INPUT NAND GATE, PDSO14, 4.40 MM, PLASTIC, MO-153, SOT402-1, TSSOP-14
NXP

74AHC00PW-Q100

Quad 2-input NAND gate
NEXPERIA

74AHC00PW-T

IC AHC/VHC/H/U/V SERIES, QUAD 2-INPUT NAND GATE, PDSO14, 4.40 MM, PLASTIC, MO-153, SOT402-1, TSSOP-14, Gate
NXP

74AHC00PW/T3

IC AHC/VHC/H/U/V SERIES, QUAD 2-INPUT NAND GATE, PDSO14, 4.40 MM, PLASTIC, MO-153, SOT402-1, TSSOP-14, Gate
NXP

74AHC00PWDH

Quad 2-input NAND gate
NXP

74AHC00S14-13

NAND Gate, AHC/VHC/H/U/V Series, 4-Func, 2-Input, CMOS, PDSO14, GREEN, SOP-14
DIODES