74AHC1G04 [NXP]
Inverter; 逆变器
| 型号： | 74AHC1G04 |
| 厂家： | 
NXP |
| 描述： | Inverter |
| 文件： | 总16页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74AHC1G04; 74AHCT1G04
Inverter
Product specification
2003 Sep 04
Supersedes data of 2002 May 27
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
FEATURES
DESCRIPTION
• Symmetrical output impedance
• High noise immunity
The 74AHC1G04/74AHCT1G04 are high-speed Si-gate
CMOS devices.
The 74AHC1G04/74AHCT1G04 provides the inverting
buffer.
• ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
• Low power dissipation
• Balanced propagation delays
• Very small 5-pin package
• Specified from −40 to +85 °C and −40 to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
TYPICAL
SYMBOL
PARAMETER
CONDITIONS
UNIT
ns
74AHC1G04 74AHCT1G04
tPHL/tPLH propagation delay input A to output Y CL = 15 pF; VCC = 5 V
3.1
1.5
15
3.4
1.5
16
CI
input capacitance
pF
pF
CPD
power dissipation capacitance
CL = 50 pF; f = 1 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
∑(CL × VCC2 × fo) = sum of outputs.
2. The condition is VI = GND to VCC
.
2003 Sep 04
2
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
FUNCTION TABLE
See note 1.
INPUT
A
OUTPUT
Y
L
H
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING AND PACKAGE INFORMATION
PACKAGES
PACKAGE MATERIAL
TYPE NUMBER
TEMPERATURE
PINS
CODE
MARKING
RANGE
74AHC1G04GW
74AHCT1G04GW
74AHC1G04GV
74AHCT1G04GV
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
5
5
5
5
SC-88A
SC-88A
SC-74A
SC-74A
plastic
plastic
plastic
plastic
SOT353
SOT353
SOT753
SOT753
AC
CC
A04
C04
PINNING
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
n.c.
A
not connected
data input A
GND
Y
ground (0 V)
data output Y
supply voltage
VCC
handbook, halfpage
n.c.
1
2
3
5
4
V
Y
CC
handbook, halfpage
2
A
Y
4
A
04
GND
MNA108
MNA107
Fig.1 Pin configuration.
Fig.2 Logic symbol.
2003 Sep 04
3
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
handbook, halfpage
2
1
4
handbook, halfpage
Y
A
MNA110
MNA109
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
74AHC1G04
74AHCT1G04
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0
0
5.0
−
5.5
5.5
VCC
4.5
0
5.0
−
5.5
5.5
VCC
V
V
V
VI
input voltage
VO
output voltage
0
−
0
−
Tamb
operating ambient
temperature
see DC and AC
characteristics per device
−40
+25
+125 −40
+25
+125 °C
tr, tf (∆t/∆f) input rise and fall times VCC = 3.3 ±0.3 V
CC = 5 ±0.5 V
−
−
−
−
100
20
−
−
−
−
−
ns/V
ns/V
V
20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage
−0.5 +7.0
−0.5 +7.0
V
VI
input voltage
V
IIK
IOK
IO
input diode current
output diode current
output source or sink current
VCC or GND current
storage temperature
power dissipation
VI < −0.5 V
−
−20
±20
±25
±75
mA
mA
mA
mA
VO < −0.5 or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V
−
−
ICC, IGND
−
Tstg
PD
−65
−
+150 °C
250 mW
Tamb = −40 to +125 °C
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2003 Sep 04
4
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
DC CHARACTERISTICS
Type 74AHC1G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX. UNIT
OTHER
VCC (V)
Tamb = 25 °C
VIH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
1.5
−
−
−
−
−
−
−
V
V
V
V
V
V
2.1
3.85
−
−
−
VIL
LOW-level input
voltage
0.5
0.9
1.65
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
2.0
3.0
4.5
3.0
4.5
1.9
2.0
3.0
4.5
−
−
−
−
−
−
V
V
V
V
V
2.9
4.4
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
2.58
3.94
−
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
0
0
0
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.36
0.36
0.1
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0
5.5
−
−
−
10
10
µA
input capacitance
−
1.5
pF
2003 Sep 04
5
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
TEST CONDITIONS
OTHER
SYMBOL
PARAMETER
MIN.
TYP.
MAX. UNIT
V
CC (V)
Tamb = −40 to +85 °C
VIH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
1.5
−
−
−
−
−
−
−
V
V
V
V
V
V
2.1
3.85
−
−
−
VIL
LOW-level input
voltage
0.5
0.9
1.65
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
2.0
3.0
4.5
3.0
4.5
1.9
2.9
4.4
2.48
3.8
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.44
0.44
1.0
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0
5.5
−
−
−
−
10
10
µA
input capacitance
−
pF
2003 Sep 04
6
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
TEST CONDITIONS
OTHER
SYMBOL
PARAMETER
MIN.
TYP.
MAX. UNIT
V
CC (V)
Tamb = −40 to +125 °C
VIH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
1.5
−
−
−
−
−
−
−
V
V
V
V
V
V
2.1
3.85
−
−
−
VIL
LOW-level input
voltage
0.5
0.9
1.65
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
2.0
3.0
4.5
3.0
4.5
1.9
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
2.9
4.4
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
2.40
3.70
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.55
0.55
2.0
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0
5.5
−
−
−
−
40
10
µA
input capacitance
−
pF
2003 Sep 04
7
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
Type 74AHCT1G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
OTHER
VCC (V)
Tamb = 25 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
V
V
−
0.8
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
4.5
−
−
V
V
IO = −8.0 mA
3.94
−
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
0
−
−
−
−
0.1
V
IO = 8.0 mA
0.36
0.1
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0
µA
µA
mA
ICC
∆ICC
quiescent supply current
1.0
additional quiescent supply VI = 3.4 V; other inputs at
1.35
current per input pin
VCC or GND; IO = 0
CI
input capacitance
−
1.5
10
pF
Tamb = −40 to +85 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
V
V
−
0.8
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
3.8
−
−
−
−
V
V
IO = −8.0 mA
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
−
−
−
−
−
0.1
0.44
1.0
10
V
IO = 8.0 mA
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0
µA
µA
mA
ICC
∆ICC
quiescent supply current
additional quiescent supply VI = 3.4 V; other inputs at
1.5
current per input pin
VCC or GND; IO = 0
CI
input capacitance
−
−
−
10
pF
2003 Sep 04
8
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
TEST CONDITIONS
OTHER
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
VCC (V)
Tamb = −40 to +125 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
V
V
−
0.8
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
−
−
−
−
V
V
IO = −8.0 mA
3.70
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
−
−
−
−
−
0.1
0.55
2.0
40
V
IO = 8.0 mA
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0
µA
µA
mA
ICC
∆ICC
quiescent supply current
additional quiescent supply VI = 3.4 V; other inputs at
1.5
current per input pin
VCC or GND; IO = 0
CI
input capacitance
−
−
−
10
pF
2003 Sep 04
9
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
AC CHARACTERISTICS
Type 74AHC1G04
GND = 0 V; tr = tf ≤ 3.0 ns.
TEST CONDITIONS
WAVEFORMS CL (pF)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
VCC (V)
T
amb = 25 °C
tPHL/tPLH propagation delay input A to
output Y
see Figs 5 and 6 15
3.0 to 3.6
3.3
−
−
−
−
−
−
−
−
−
7.1
−
ns
ns
ns
ns
4.3
−
4.5 to 5.5
5
5.5
−
3.1
−
50
3.0 to 3.6
3.3
10.6 ns
6.1
−
−
ns
ns
ns
4.5 to 5.5
5
7.5
−
4.5
T
amb = −40 to +85 °C
tPHL/tPLH
propagation delay input A to
output Y
see Figs 5 and 6 15
50
3.0 to 3.6 1.0
4.5 to 5.5 1.0
3.0 to 3.6 1.0
4.5 to 5.5 1.0
−
−
−
−
8.5
6.5
12
ns
ns
ns
ns
8.5
Tamb = −40 to +125 °C
tPHL/tPLH
propagation delay input A to
output Y
see Figs 5 and 6 15
50
3.0 to 3.6 1.0
4.5 to 5.5 1.0
3.0 to 3.6 1.0
4.5 to 5.5 1.0
−
−
−
−
11.0 ns
7.0 ns
14.5 ns
9.5 ns
2003 Sep 04
10
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
Type 74AHCT1G04
GND = 0 V; tr = tf ≤ 3.0 ns.
TEST CONDITIONS
WAVEFORMS CL (pF)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
VCC (V)
T
amb = 25 °C
tPHL/tPLH propagation delay input A to
output Y
see Figs 5 and 6 15
50
4.5 to 5.5
−
−
−
−
−
6.7
−
ns
ns
ns
ns
5
3.4
−
4.5 to 5.5
5
7.7
−
4.9
T
amb = −40 to +85 °
tPHL/tPLH
propagation delay input A to
output Y
see Figs 5 and 6 15
50
4.5 to 5.5 1.0
4.5 to 5.5 1.0
−
−
7.5
8.5
ns
ns
T
amb = −40 to +125 °C
tPHL/tPLH
propagation delay input A to
output Y
see Figs 5 and 6 15
50
4.5 to 5.5 1.0
4.5 to 5.5 1.0
−
−
8.5
ns
10.0 ns
2003 Sep 04
11
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
AC WAVEFORMS
handbook, halfpage
A input
V
M
t
t
PHL
PLH
Y output
V
M
MNA111
VI INPUT
VM
VM
TYPE
REQUIREMENTS INPUT OUTPUT
74AHC1G04
GND to VCC
50% VCC 50% VCC
1.5 V 50% VCC
74AHCT1G04
GND to 3.0 V
Fig.5 Input (A) to output (Y) propagation delays.
V
handbook, halfpage
CC
V
V
O
I
PULSE
GENERATOR
D.U.T.
C
R
L
T
MNA101
Definitions for test circuit:
CL = load capacitance including jig and probe capacitance (see Chapter “AC characteristics”).
RT = termination resistance should be equal to the output impedance Z0 of the pulse generator.
Fig.6 Load circuitry for switching times.
12
2003 Sep 04
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
PACKAGE OUTLINES
Plastic surface mounted package; 5 leads
SOT353
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
(2)
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-88A
97-02-28
SOT353
2003 Sep 04
13
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
Plastic surface mounted package; 5 leads
SOT753
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
c
L
p
1
2
3
detail X
e
b
p
w
M B
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.100
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
SOT753
SC-74A
02-04-16
2003 Sep 04
14
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
DATA SHEET STATUS
DATA SHEET
LEVEL
PRODUCT
STATUS(2)(3)
DEFINITION
STATUS(1)
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 04
15
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Printed in The Netherlands
R44/06/pp16
Date of release: 2003 Sep 04
Document order number: 9397 750 11919
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