74AUC1G02GW [NXP]

Single 2-input NOR gate; 单路2输入或非门
74AUC1G02GW
型号: 74AUC1G02GW
厂家: NXP    NXP
描述:

Single 2-input NOR gate
单路2输入或非门

栅极 逻辑集成电路 光电二极管
文件: 总12页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
74AUC1G02  
Single 2-input NOR gate  
Preliminary specification  
2002 Nov 12  
File under Integrated Circuits, IC24  
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
FEATURES  
DESCRIPTION  
Wide supply voltage range from 0.8 to 2.7 V  
Performance optimised for VCC = 1.8 V  
High noise immunity  
The 74AUC1G02is a high-performance, low-power,  
low-voltage, Si-gate CMOS device.  
Schmitt-trigger action at all inputs makes the circuit  
tolerant for slower input rise and fall time.  
Complies with JEDEC standard:  
– JESD76 (1.65 to 1.95 V)  
This device is fully specified for partial power-down  
applications using Ioff. The Ioff circuitry disables the output,  
preventing the damaging current backflow through the  
device when it is powered down.  
8 mA output drive (VCC = 1.65 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
The 74AUC1G02 provides the single 2-input NOR  
function.  
ESD protection:  
2000 V Human Body Model (A 114-A)  
200 V Machine Model (A 115-A)  
3.3 V tolerant inputs/outputs  
SC-88A and SC-74A package.  
QUICK REFERENCE DATA  
GND = 0 V; Tamb = 25 °C; input slewrate 1 V/ns.  
SYMBOL  
PARAMETER  
CONDITIONS  
TYPICAL  
UNIT  
tPHL/tPLH propagation delay inputs A and B to  
output Y  
VCC = 0.8 V; CL = 15 pF; RL = 2 kΩ  
VCC = 1.2 V; CL = 15 pF; RL = 2 kΩ  
VCC = 1.5 V; CL = 15 pF; RL = 2 kΩ  
4.6  
1.9  
1.4  
1.5  
ns  
ns  
ns  
ns  
ns  
VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ  
VCC = 2.5 V; CL = 30 pF; RL = 500 1.2  
CI  
input capacitance  
4
pF  
pF  
CPD  
power dissipation capacitance per buffer  
VCC = 1.8 V; notes 1 and 2  
14  
Notes  
1. CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in Volts.  
2. The condition is VI = GND to VCC  
.
2002 Nov 12  
2
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
FUNCTION TABLE  
See note 1.  
INPUT  
OUTPUT  
Y
A
B
L
L
L
H
L
H
L
L
L
H
H
H
Note  
1. H = HIGH voltage level;  
L = LOW voltage level.  
ORDERING INFORMATION  
TYPE NUMBER  
PACKAGE  
TEMPERATURE  
PINS  
PACKAGE MATERIAL  
CODE  
MARKING  
RANGE  
74AUC1G02GW  
74AUC1G02GV  
40 to +85 °C  
40 to +85 °C  
5
5
SC-88A  
SC-74A  
plastic  
plastic  
SOT353  
SOT753  
FB  
F02  
PINNING  
PIN  
1
SYMBOL  
DESCRIPTION  
B
A
data input B  
data input A  
ground (0 V)  
data output Y  
supply voltage  
2
3
GND  
Y
4
5
VCC  
handbook, halfpage  
B
A
1
2
3
5
4
V
Y
CC  
handbook, halfpage  
1
2
B
A
Y
4
02  
GND  
MNA103  
MNA102  
Fig.1 Pin configuration.  
Fig.2 Logic symbol.  
2002 Nov 12  
3
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
handbook, halfpage  
B
1
2
handbook, halfpage  
1  
4
Y
MNA104  
A
MNA105  
Fig.3 IEE/IEC logic symbol.  
Fig.4 Logic diagram.  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
0.8  
MAX.  
UNIT  
2.7  
2.7  
VCC  
2.7  
+85  
20  
V
V
V
V
VI  
input voltage  
0
VO  
output voltage  
active mode  
VCC = 0 V; Power-down mode  
0
0
Tamb  
operating ambient temperature  
input rise and fall times  
40  
0
°C  
tr,tf (t/f)  
ns/V  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).  
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT  
VCC supply voltage 0.5 +3.6  
V
IIK  
input diode current  
input voltage  
VI < 0  
note 1  
50  
mA  
V
VI  
0.5  
+3.6  
±50  
IOK  
VO  
output diode current  
output voltage  
VO > VCC or VO < 0  
mA  
V
active mode; notes 1 and 2  
0.5  
VCC + 0.5  
+3.6  
±60  
Power-down mode; notes 1 and 2 0.5  
V
IO  
output source or sink current  
VCC or GND current  
VO = 0 to VCC  
mA  
mA  
°C  
mW  
ICC, IGND  
Tstg  
±100  
+150  
250  
storage temperature  
65  
PD  
power dissipation per package  
for temperature range from  
40 to +85 °C  
Notes  
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
2. When VCC =0 (Powered-down mode), the output voltage can be 2.7 V in normal operation.  
2002 Nov 12  
4
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
DC CHARACTERISTICS  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
TEST CONDITIONS  
Tamb (°C)  
SYMBOL  
PARAMETER  
40 to +85  
UNIT  
OTHER  
VCC (V)  
0.8  
MIN.  
VCC  
TYP.(1)  
MAX.  
VIH  
HIGH-level input  
voltage  
V
1.1 to 2.3  
2.3 to 2.7  
0.8  
0.65 × VCC  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA  
1.7  
VIL  
LOW-level input  
voltage  
GND  
1.1 to 2.3  
2.3 to 2.7  
0.35 × VCC  
0.7  
VOH  
HIGH-level output VI = VIH or VIL; IO = 100 µA 0.8 to 2.7  
voltage  
VCC 0.1  
VI = VIH or VIL; IO =700 µA 0.8  
0.55  
VI = VIH or VIL; IO =3 mA  
VI = VIH or VIL; IO = 5 mA  
VI = VIH or VIL; IO = 8 mA  
VI = VIH or VIL; IO = 9 mA  
1.1  
1.5  
1.65  
2.3  
VCC 0.3  
VCC 0.4  
VCC 0.45  
1.8  
VOL  
LOW-level output VI = VIH or VIL; IO = 100 µA 0.8 to 2.7  
voltage  
0.2  
VI = VIH or VIL; IO = 700 µA 0.8  
0.25  
VI = VIH or VIL; IO = 3 mA  
VI = VIH or VIL; IO = 5 mA  
VI = VIH or VIL; IO = 8 mA  
VI = VIH or VIL; IO = 9 mA  
VI = VCC or GND  
1.1  
0.3  
0.4  
0.45  
0.6  
±5  
1.5  
1.65  
2.3  
II  
input leakage  
current  
0 to 2.7  
±0.1  
Ioff  
ICC  
power OFF  
leakage current  
VI or VO = 2.7 V  
0
±0.1  
±10  
µA  
µA  
quiescent supply VI = VCC or GND; IO = 0  
current  
0.8 to 2.7  
0.1  
10  
Note  
1. All typical values are at VCC = 1.8 V and Tamb = 25 °C.  
2002 Nov 12  
5
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
AC CHARACTERISTICS  
GND = 0 V; input slewrate 1 V/ns.  
TEST CONDITIONS  
VCC (V) CL(pF) RL(k)  
0.8  
Tamb (°C)  
SYMBOL  
PARAMETER  
40 to +85  
UNIT  
WAVEFORMS  
MIN. TYP. MAX.  
tPHL/tPLH propagation delay  
see  
15  
15  
15  
30  
30  
2
2
4.6  
1.9  
1.4  
1.5  
1.2  
ns  
ns  
ns  
ns  
ns  
inputs A and B to output Y Figs 5 and 6  
1.1 to 1.3  
1.4 to 1.6  
1.65 to 1.95  
2.3 to 2.7  
0.9  
0.5  
0.7  
0.5  
3.2  
2.2  
2.4  
2.1  
2
1
0.5  
AC WAVEFORMS  
V
handbook, halfpage  
A, B input  
I
V
M
GND  
t
t
PHL  
PLH  
V
OH  
V
Y output  
M
MNA611  
V
OL  
INPUT  
VCC  
VM  
0.5 × VCC VCC  
VI  
Slewrate  
0.8 to 2.7 V  
1 V/ns  
VOL and VOH are typical output voltage drop that occur with the output load.  
Fig.5 Inputs A, B to output Y propagation delay times.  
2002 Nov 12  
6
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
V
EXT  
V
CC  
R
L
V
V
O
I
PULSE  
GENERATOR  
D.U.T.  
C
R
R
L
L
T
MNA616  
VEXT  
TPLH/TPHL TPZH/TPHZ TPZL/TPLZ  
VCC  
<1.65 V  
VI  
VCC  
VCC  
VCC  
CL  
RL  
15 pF  
30 pF  
30 pF  
2 kΩ  
open  
GND  
GND  
GND  
2 × VCC  
2 × VCC  
2 × VCC  
1.65 to 1.95 V  
2.3 to 2.7 V  
1 kΩ  
open  
open  
0.5 kΩ  
Definitions for test circuits:  
RL = Load resistor.  
CL = Load capacitance including jig and probe capacitance (see Chapter “AC characteristics”).  
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.  
Fig.6 Load circuitry for switching times.  
2002 Nov 12  
7
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
PACKAGE OUTLINE  
Plastic surface mounted package; 5 leads  
SOT353  
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
(2)  
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SC-88A  
97-02-28  
SOT353  
2002 Nov 12  
8
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
Plastic surface mounted package; 5 leads  
SOT753  
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
c
L
p
1
2
3
detail X  
e
b
p
w
M B  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.100  
0.013  
0.40  
0.25  
1.1  
0.9  
0.26  
0.10  
3.1  
2.7  
1.7  
1.3  
3.0  
2.5  
0.6  
0.2  
0.33  
0.23  
mm  
0.95  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
SOT753  
SC-74A  
02-04-16  
2002 Nov 12  
9
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
SOLDERING  
If wave soldering is used the following conditions must be  
observed for optimal results:  
Introduction to soldering surface mount packages  
Use a double-wave soldering method comprising a  
turbulent wave with high upward pressure followed by  
a smooth laminar wave.  
This text gives a very brief insight to a complex  
technology. A more in-depth account of soldering ICs can  
be found in our “Data Handbook IC26; Integrated Circuit  
Packages” (document order number 9398 652 90011).  
For packages with leads on two sides and a pitch (e):  
– larger than or equal to 1.27 mm, the footprint  
longitudinal axis is preferred to be parallel to the  
transport direction of the printed-circuit board;  
There is no soldering method that is ideal for all surface  
mount IC packages. Wave soldering can still be used for  
certain surface mount ICs, but it is not suitable for fine  
pitch SMDs. In these situations reflow soldering is  
recommended.  
– smaller than 1.27 mm, the footprint longitudinal axis  
must be parallel to the transport direction of the  
printed-circuit board.  
Reflow soldering  
The footprint must incorporate solder thieves at the  
downstream end.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling  
or pressure-syringe dispensing before package  
placement.  
For packages with leads on four sides, the footprint  
must be placed at a 45° angle to the transport direction  
of the printed-circuit board. The footprint must  
incorporate solder thieves downstream and at the side  
corners.  
Several methods exist for reflowing; for example,  
convection or convection/infrared heating in a conveyor  
type oven. Throughput times (preheating, soldering and  
cooling) vary between 100 and 200 seconds depending  
on heating method.  
During placement and before soldering, the package  
must be fixed with a droplet of adhesive. The adhesive  
can be applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Typical reflow peak temperatures range from  
215 to 250 °C. The top-surface temperature of the  
packages should preferable be kept below 220 °C for  
thick/large packages, and below 235 °C for small/thin  
packages.  
Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Manual soldering  
Wave soldering  
Fix the component by first soldering two  
diagonally-opposite end leads. Use a low voltage (24 V or  
less) soldering iron applied to the flat part of the lead.  
Contact time must be limited to 10 seconds at up to  
300 °C.  
Conventional single wave soldering is not recommended  
for surface mount devices (SMDs) or printed-circuit  
boards with a high component density, as solder bridging  
and non-wetting can present major problems.  
When using a dedicated tool, all other leads can be  
soldered in one operation within 2 to 5 seconds between  
270 and 320 °C.  
To overcome these problems the double-wave soldering  
method was specifically developed.  
2002 Nov 12  
10  
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
Suitability of surface mount IC packages for wave and reflow soldering methods  
SOLDERING METHOD  
PACKAGE  
WAVE  
not suitable  
REFLOW(1)  
BGA, HBGA, LFBGA, SQFP, TFBGA  
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS  
PLCC(3), SO, SOJ  
suitable  
suitable  
suitable  
not suitable(2)  
suitable  
LQFP, QFP, TQFP  
not recommended(3)(4) suitable  
not recommended(5)  
suitable  
SSOP, TSSOP, VSO  
Notes  
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum  
temperature (with respect to time) and body size of the package, there is a risk that internal or external package  
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the  
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.  
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink  
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).  
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.  
The package footprint must incorporate solder thieves downstream and at the side corners.  
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;  
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.  
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is  
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.  
2002 Nov 12  
11  
Philips Semiconductors  
Preliminary specification  
Single 2-input NOR gate  
74AUC1G02  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS  
STATUS  
DEFINITIONS (1)  
Objective specification  
Development This data sheet contains the design target or goal specifications for  
product development. Specification may change in any manner without  
notice.  
Preliminary specification Qualification  
This data sheet contains preliminary data, and supplementary data will be  
published at a later date. Philips Semiconductors reserves the right to  
make changes at any time without notice in order to improve design and  
supply the best possible product.  
Product specification  
Production  
This data sheet contains final specifications. Philips Semiconductors  
reserves the right to make changes at any time without notice in order to  
improve design and supply the best possible product.  
Note  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury.  
Philips Semiconductors customers using or selling these  
products for use in such applications do so at their own  
risk and agree to fully indemnify Philips Semiconductors  
for any damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in  
the Characteristics sections of the specification is not  
implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or  
title under any patent, copyright, or mask work right to  
these products, and makes no representations or  
warranties that these products are free from patent,  
copyright, or mask work right infringement, unless  
otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will  
be suitable for the specified use without further testing or  
modification.  
2002 Nov 12  
12  

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