74AUP1G18GM-H [NXP]
Low-power 1-of-2 demultiplexer with 3-state deselected output;
| 型号： | 74AUP1G18GM-H |
| 厂家： | 
NXP |
| 描述： | Low-power 1-of-2 demultiplexer with 3-state deselected output 解复用器 |
| 文件： | 总19页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
74AUP1G18
Low-power 1-of-2 demultiplexer with 3-state deselected
output
Rev. 02 — 3 April 2008
Product data sheet
1. General description
The 74AUP1G18 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low
static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF
.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G18 provides a 1-of-2 non-inverting demultiplexer with 3-state output. The
74AUP1G18 buffers the data on input pin (A) and passes it either to output 1Y or 2Y,
depending on whether the state of the select input pin (S) is LOW or HIGH.
2. Features
I Wide supply voltage range from 0.8 V to 3.6 V
I High noise immunity
I Complies with JEDEC standards:
N JESD8-12 (0.8 V to 1.3 V)
N JESD8-11 (0.9 V to 1.65 V)
N JESD8-7 (1.2 V to 1.95 V)
N JESD8-5 (1.8 V to 2.7 V)
N JESD8-B (2.7 V to 3.6 V)
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 5000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101C exceeds 1000 V
I Low static power consumption; ICC = 0.9 µA (maximum)
I Latch-up performance exceeds 100 mA per JESD 78 Class II
I Inputs accept voltages up to 3.6 V
I Low noise overshoot and undershoot < 10 % of VCC
I IOFF circuitry provides partial Power-down mode operation
I Multiple package options
I Specified from −40 °C to +85 °C and −40 °C to +125 °C
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP1G18GW
74AUP1G18GM
−40 °C to +125 °C
−40 °C to +125 °C
SC-88
plastic surface-mounted package; 6 leads
SOT363
XSON6
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 × 1.45 × 0.5 mm
74AUP1G18GF
−40 °C to +125 °C
XSON6
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1 × 1 × 0.5 mm
4. Marking
Table 2.
Marking
Type number
Marking code
74AUP1G18GW
74AUP1G18GM
74AUP1G18GF
pW
pW
pW
5. Functional diagram
1Y
6
S
A
1
3
2Y
4
mnb088
Fig 1. Logic symbol
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
2 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
6. Pinning information
6.1 Pinning
74AUP1G18
74AUP1G18
S
GND
A
1
2
3
6
5
4
1Y
74AUP1G18
1
2
3
6
5
4
S
GND
A
1Y
S
GND
A
1
2
3
6
5
4
1Y
V
CC
V
CC
V
CC
2Y
2Y
2Y
001aad869
001aad870
Transparent top view
Transparent top view
001aae822
Fig 2. Pin configuration SOT363
(SC-88)
Fig 3. Pin configuration SOT886
(XSON6)
Fig 4. Pin configuration SOT891
(XSON6)
6.2 Pin description
Table 3.
Symbol
S
Pin description
Pin
1
Description
data select
ground (0 V)
data input
GND
A
2
3
2Y
4
data output
supply voltage
data output
VCC
1Y
5
6
7. Functional description
Table 4.
Function table[1]
Input
Output
S
L
A
L
1Y
L
2Y
Z
L
H
L
H
Z
Z
H
H
L
H
Z
H
[1] H = HIGH voltage level;
L = LOW voltage level;
Z = high-impedance OFF-state.
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
3 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC
IIK
Parameter
Conditions
Min
−0.5
−50
−0.5
-
Max
+4.6
-
Unit
V
supply voltage
input clamping current
input voltage
VI < 0 V
mA
V
[1]
[1]
VI
+4.6
±50
+4.6
±20
50
IOK
output clamping current VO > VCC or VO < 0 V
mA
V
VO
output voltage
Active mode and Power-down mode
−0.5
-
IO
output current
VO = 0 V to VCC
mA
mA
mA
°C
ICC
supply current
-
IGND
Tstg
Ptot
ground current
−50
−65
-
-
storage temperature
total power dissipation
+150
250
[2]
Tamb = −40 °C to +125 °C
mW
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SC-88 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
Recommended operating conditions
Parameter
Conditions
Min
0.8
0
Max
3.6
Unit
supply voltage
input voltage
output voltage
V
VI
3.6
V
VO
Active mode
0
VCC
3.6
V
Power-down mode; VCC = 0 V
0
V
Tamb
ambient temperature
−40
0
+125
200
°C
ns/V
∆t/∆V
input transition rise and fall rate VCC = 0.8 V to 3.6 V
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
4 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
VIH
HIGH-level input voltage
VCC = 0.8 V
0.70 × VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.65 × VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.30 × VCC
0.35 × VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
V
CC − 0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VI = VIH or VIL
0.75 × VCC
1.11
1.32
2.05
1.9
2.72
2.6
VOL
LOW-level output voltage
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI = VIH or VIL; VO = 0 V to 3.6 V;
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
0.3 × VCC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.1
V
V
V
V
V
V
V
II
input leakage current
µA
µA
IOZ
OFF-state output current
VCC = 0 V to 3.6 V
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
±0.2
±0.2
µA
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
-
-
-
-
0.5
40
µA
µA
V
[1]
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
CI
input capacitance
output capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
VO = GND; VCC = 0 V
-
-
0.8
1.7
-
-
pF
pF
CO
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
5 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = −40 °C to +85 °C
VIH
HIGH-level input voltage
VCC = 0.8 V
0.70 × VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.65 × VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.30 × VCC
0.35 × VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
V
CC − 0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VI = VIH or VIL
0.7 × VCC
1.03
1.30
1.97
1.85
2.67
2.55
VOL
LOW-level output voltage
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI = VIH or VIL; VO = 0 V to 3.6 V;
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
0.3 × VCC
0.37
0.35
0.33
0.45
0.33
0.45
±0.5
±0.5
V
V
V
V
V
V
V
II
input leakage current
µA
µA
IOZ
OFF-state output current
VCC = 0 V to 3.6 V
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
±0.5
±0.6
µA
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
-
-
-
-
0.9
50
µA
µA
V
[1]
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
6 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = −40 °C to +125 °C
VIH
HIGH-level input voltage
VCC = 0.8 V
0.75 × VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.70 × VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.25 × VCC
0.30 × VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
V
CC − 0.11 -
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VI = VIH or VIL
0.6 × VCC
0.93
1.17
1.77
1.67
2.40
2.30
-
-
-
-
-
-
-
VOL
LOW-level output voltage
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI = VIH or VIL; VO = 0 V to 3.6 V;
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11
V
0.33 × VCC
0.41
V
V
0.39
V
0.36
V
0.50
V
0.36
V
0.50
V
II
input leakage current
±0.75
±0.75
µA
µA
IOZ
OFF-state output current
VCC = 0 V to 3.6 V
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
±0.75
±0.75
µA
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
-
-
-
-
1.4
75
µA
µA
V
[1]
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
[1] One input at VCC − 0.6 V, other input at VCC or GND.
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
7 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1] Max
Min
Max
Max
(85 °C) (125 °C)
CL = 5 pF
[2]
[3]
[4]
tpd
ten
tdis
propagation delay A to nY; see Figure 5
VCC = 0.8 V
-
20.4
5.6
3.9
3.1
2.4
2.2
-
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
2.7
2.4
1.8
1.6
1.4
10.6
6.1
4.7
3.6
3.1
2.4
2.2
1.6
1.4
1.2
10.7
6.5
5.3
4.0
3.4
10.7
6.7
5.6
4.2
3.5
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
enable time
S to nY; see Figure 6
VCC = 0.8 V
-
46.1
5.6
4.0
3.3
2.7
2.4
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
S to nY; see Figure 6
VCC = 0.8 V
3.1
2.5
2.1
1.7
1.5
9.7
6.2
5.1
3.9
3.5
2.9
2.2
1.8
1.4
1.2
10.1
6.6
5.5
4.2
3.7
11.1
7.3
6.1
4.6
4.1
disable time
-
12.6
4.7
3.5
3.4
2.5
2.9
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
3.0
2.3
2.3
1.7
2.0
7.5
5.2
4.8
3.6
3.8
2.9
2.2
2.1
1.5
1.8
7.9
5.5
5.1
3.9
4.1
8.7
6.1
5.6
4.3
4.5
CL = 10 pF
[2]
tpd
propagation delay A to nY; see Figure 5
VCC = 0.8 V
-
23.9
6.4
4.5
3.7
3.0
2.7
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
2.9
2.7
2.3
1.9
1.8
12.2
7.1
5.5
4.2
3.9
2.9
2.4
2.1
1.8
1.6
12.3
7.6
6.0
4.6
4.1
12.3
7.9
6.3
4.9
4.3
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
8 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1] Max
Min
Max
Max
(85 °C) (125 °C)
[3]
ten
enable time
S to nY; see Figure 6
VCC = 0.8 V
-
50.1
6.5
4.6
3.9
3.2
2.9
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
S to nY; see Figure 6
VCC = 0.8 V
3.6
2.9
2.5
2.1
2.0
11.1
7.0
5.8
4.6
4.2
3.3
2.6
2.2
1.7
1.6
11.6
7.6
6.3
4.9
4.4
12.8
8.4
6.9
5.4
4.8
[4]
tdis
disable time
-
14.5
5.8
4.4
4.5
3.3
4.1
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
4.1
3.2
3.3
2.4
3.1
8.7
6.1
6.0
4.4
5.2
3.9
3.0
3.2
2.2
3.0
9.1
6.5
6.3
4.7
5.5
10.0
7.2
6.9
5.2
6.1
CL = 15 pF
[2]
[3]
[4]
tpd
ten
tdis
propagation delay A to nY; see Figure 5
VCC = 0.8 V
-
27.4
7.2
5.0
4.2
3.4
3.2
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
3.4
3.2
2.5
2.3
2.2
13.7
7.9
6.3
4.9
4.4
3.2
2.8
2.4
2.2
1.9
13.9
8.7
7.0
5.3
4.8
13.9
9.1
7.4
5.7
5.0
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
enable time
S to nY; see Figure 6
VCC = 0.8 V
-
53.9
7.3
5.2
4.4
3.6
3.4
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
S to nY; see Figure 6
VCC = 0.8 V
4.1
3.3
2.9
2.5
2.3
12.4
7.8
6.4
5.2
4.8
3.6
2.9
2.5
2.1
1.9
12.9
8.4
7.0
5.5
4.9
14.2
9.2
7.7
6.1
5.4
disable time
-
16.3
6.9
5.3
5.6
4.1
5.3
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
5.1
4.0
4.3
3.1
4.2
10.0
7.1
7.3
5.3
6.6
4.9
3.8
4.2
3.0
4.1
10.4
7.4
7.6
5.6
6.9
11.4
8.1
8.4
6.2
7.6
74AUP1G18_2
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Product data sheet
Rev. 02 — 3 April 2008
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74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1] Max
Min
Max
Max
(85 °C) (125 °C)
CL = 30 pF
[2]
[3]
[4]
tpd
ten
tdis
propagation delay A to nY; see Figure 5
VCC = 0.8 V
-
37.8
9.5
6.6
5.5
4.5
4.2
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
4.1
3.7
3.4
3.2
3.1
18.0
10.4
8.3
4.1
3.8
3.3
3.0
2.9
18.5
11.5
9.2
18.9
12.1
9.8
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
6.3
6.8
7.3
VCC = 3.0 V to 3.6 V
5.8
6.6
7.0
enable time
S to nY; see Figure 6
VCC = 0.8 V
-
66.3
9.6
6.8
5.7
4.8
4.5
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
S to nY; see Figure 6
VCC = 0.8 V
5.3
4.4
4.0
3.4
3.2
16.4
10.0
8.2
4.7
3.9
3.4
2.9
2.8
17.0
10.9
8.9
18.7
12.0
9.8
6.6
7.0
7.7
6.1
6.5
7.2
disable time
-
21.8
10.4
8.0
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
8.2
6.5
7.4
5.3
7.6
14.3
10.0
11.0
7.9
8.0
6.3
7.3
5.2
7.4
14.7
10.4
11.3
8.2
16.2
11.4
12.4
9.0
9.0
6.5
9.0
10.7
11.0
12.1
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
10 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1] Max
Min
Max
Max
(85 °C) (125 °C)
CL = 5 pF, 10 pF, 15 pF and 30 pF
CPD power dissipation fi = 1 MHz;
capacitance VI = GND to VCC
[5]
VCC = 0.8 V
-
-
-
-
-
-
2.8
2.9
3.0
3.2
3.7
4.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pF
pF
pF
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
[1] All typical values are measured at nominal VCC
[2] tpd is the same as tPLH and tPHL
[3] ten is the same as tPZH and tPZL
[4] tdis is the same as tPHZ and tPLZ
.
.
.
.
[5] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
12. Waveforms
V
I
V
V
M
A input
M
GND
t
t
PLH
PHL
V
OH
V
V
M
nY output
M
V
OL
mnb089
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.
Fig 5. The data input (A) to output (nY) propagation delays
Table 9.
Measurement points
Supply voltage
VCC
Output
VM
Input
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 × VCC
0.5 × VCC
VCC
≤ 3.0 ns
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
11 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
V
I
S input
V
M
t
GND
t
PLZ
PZL
V
CC
nY output
LOW-to-OFF
OFF-to-LOW
V
M
V
X
V
OL
t
t
PZH
PHZ
V
OH
V
Y
nY output
V
HIGH-to-OFF
OFF-to-HIGH
M
GND
output
enabled
output
enabled
output
disabled
mnb090
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.
Fig 6. Enable and disable times
Table 10. Measurement points
Supply voltage
VCC
Input
Output
VM
VM
VX
VY
0.8 V to 1.6 V
1.65 V to 2.7 V
3.0 V to 3.6 V
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
VOL + 0.1 V
V
V
V
OH − 0.1 V
VOL + 0.15 V
VOL + 0.3 V
OH − 0.15 V
OH − 0.3 V
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
12 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
V
V
EXT
CC
5 kΩ
V
V
O
I
G
DUT
R
T
C
L
R
L
001aac521
Test data is given in Table 11.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 7. Load circuitry for switching times
Table 11. Test data
Supply voltage
VCC
Load
CL
VEXT
[1]
RL
tPLH, tPHL
open
tPZH, tPHZ
tPZL, tPLZ
0.8 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ
GND
2 × VCC
[1] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
13 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
13. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig 8. Package outline SOT363 (SC-88)
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
14 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L
1
e
6
5
4
e
1
e
1
6×
(2)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.25
0.17
1.5
1.4
1.05
0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
04-07-15
04-07-22
SOT886
MO-252
Fig 9. Package outline SOT886 (XSON6)
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
15 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm
SOT891
b
1
2
3
4×
(1)
L
L
1
e
6
5
4
e
1
e
1
6×
(1)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.20 1.05 1.05
0.12 0.95 0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.55 0.35
Note
1. Can be visible in some manufacturing processes.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
05-04-06
07-05-15
SOT891
Fig 10. Package outline SOT891 (XSON6)
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
16 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
14. Abbreviations
Table 12. Abbreviations
Acronym
CDM
CMOS
DUT
Description
Charged Device Model
Complementary Metal-Oxide Semiconductor
Device Under Test
ESD
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
TTL
Transistor-Transistor Logic
15. Revision history
Table 13. Revision history
Document ID
74AUP1G18_2
Modifications:
Release date
20080403
Data sheet status
Change notice
Supersedes
Product data sheet
-
74AUP1G18_1
• Section 2 “Features”:
Changed: ESD HBM voltage from 4000 V to 5000 V.
• Section 10 “Static characteristics”:
Changed: input capacitance.
• Section 11 “Dynamic characteristics”:
Changed: propagation delays, enable times, disable times and typical power dissipation
capacitance.
74AUP1G18_1
20061013
Product data sheet
-
-
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
17 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
16.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
74AUP1G18_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 3 April 2008
18 of 19
74AUP1G18
NXP Semiconductors
Low-power 1-of-2 demultiplexer with 3-state deselected output
18. Contents
1
2
3
4
5
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
8
9
10
11
12
13
14
15
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 April 2008
Document identifier: 74AUP1G18_2
相关型号：
74AUP1G18GW,125
74AUP1G18 - Low-power 1-of-2 demultiplexer with 3-state deselected output TSSOP 6-Pin
NXP
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