74AUP2G125DC-G [NXP]
Low-power dual buffer/line driver; 3-state;
| 型号： | 74AUP2G125DC-G |
| 厂家： | 
NXP |
| 描述： | Low-power dual buffer/line driver; 3-state 驱动 光电二极管 逻辑集成电路 |
| 文件： | 总21页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
74AUP2G125
Low-power dual buffer/line driver; 3-state
Rev. 06 — 27 November 2009
Product data sheet
1. General description
The 74AUP2G125 provides the dual non-inverting buffer/line driver with 3-state output.
The 3-state output is controlled by the output enable input (nOE). A HIGH level at pin nOE
causes the output to assume a high-impedance OFF-state. This device has the
input-disable feature, which allows floating input signals. The inputs are disabled when the
output enable input nOE) is HIGH.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low
static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2. Features
I Wide supply voltage range from 0.8 V to 3.6 V
I High noise immunity
I Complies with JEDEC standards:
N JESD8-12 (0.8 V to 1.3 V)
N JESD8-11 (0.9 V to 1.65 V)
N JESD8-7 (1.2 V to 1.95 V)
N JESD8-5 (1.8 V to 2.7 V)
N JESD8-B (2.7 V to 3.6 V)
I ESD protection:
N HBM JESD22-A114F Class 3A exceeds 5000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101D exceeds 1000 V
I Low static power consumption; ICC = 0.9 µA (maximum)
I Latch-up performance exceeds 100 mA per JESD78B Class II
I Inputs accept voltages up to 3.6 V
I Low noise overshoot and undershoot < 10 % of VCC
I Input-disable feature allows floating input conditions
I IOFF circuitry provides partial Power-down mode operation
I Multiple package options
I Specified from −40 °C to +85 °C and −40 °C to +125 °C
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP2G125DC
74AUP2G125GT
74AUP2G125GF
74AUP2G125GD
74AUP2G125GM
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
VSSOP8 plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
XSON8
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1 × 1.95 × 0.5 mm
XSON8
extremely thin small outline package; no leads;
SOT1089
8 terminals; body 1.35 × 1 × 0.5 mm
XSON8U plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3 × 2 × 0.5 mm
XQFN8U plastic extremely thin quad flat package; no leads;
SOT902-1
8 terminals; UTLP based; body 1.6 × 1.6 × 0.5 mm
4. Marking
Table 2.
Marking codes
Type number
74AUP2G125DC
74AUP2G125GT
74AUP2G125GF
74AUP2G125GD
74AUP2G125GM
Marking code[1]
p25
p25
aM
p25
p25
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1A
1Y
1OE
2A
1
EN1
2Y
2
2OE
EN2
001aah932
001aah931
Fig 1. Logic symbol
Fig 2. IEC logic symbol
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
2 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
nY
nA
nOE
mna227
Fig 3. Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74AUP2G125
1OE
1A
1
2
3
4
8
7
6
5
V
CC
2OE
1Y
74AUP2G125
2Y
1
2
3
4
8
7
6
5
1OE
1A
V
CC
2OE
GND
2A
2Y
1Y
2A
GND
001aae974
Transparent top view
001aae973
Fig 4. Pin configuration SOT765-1 (VSSOP8)
Fig 5. Pin configuration SOT833-1 and SOT1089
(XSON8)
74AUP2G125
terminal 1
index area
2OE
1
7
6
5
1OE
1A
74AUP2G125
1OE
1A
1
2
3
4
8
7
6
5
V
CC
1Y
2A
2
3
2OE
1Y
2Y
2Y
GND
2A
001aae975
001aaj471
Transparent top view
Transparent top view
Fig 6. Pin configuration SOT996-2 (XSON8U)
Fig 7. Pin configuration SOT902-1 (XQFN8U)
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
3 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
SOT765-1, SOT833-1, SOT996-2 and SOT1089
SOT902-1
1OE, 2OE
1A, 2A
GND
1, 7
2, 5
4
7, 1
6, 3
4
output enable input (active LOW)
data input
ground (0 V)
1Y, 2Y
VCC
6, 3
8
2, 5
8
data output
supply voltage
7. Functional description
Table 4.
Function table[1]
Input
nOE
L
Output
nA
L
nY
L
L
H
H
Z
H
X
[1] H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC
IIK
Parameter
Conditions
Min
−0.5
−50
−0.5
−50
−0.5
-
Max
+4.6
-
Unit
V
supply voltage
input clamping current
input voltage
VI < 0 V
mA
V
[1]
[1]
VI
+4.6
-
IOK
output clamping current VO < 0 V
mA
V
VO
output voltage
Active mode and Power-down mode
+4.6
±20
50
IO
output current
VO = 0 V to VCC
mA
mA
mA
°C
ICC
supply current
-
IGND
Tstg
Ptot
ground current
−50
−65
-
-
storage temperature
total power dissipation
+150
250
[2]
Tamb = −40 °C to +125 °C
mW
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For VSSOP8 packages: above 110 °C the value of Ptot derates linearly with 8.0 mW/K.
For XSON8, XSON8U and XQFN8U packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
4 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
9. Recommended operating conditions
Table 6.
Symbol
VCC
Operating conditions
Parameter
Conditions
Min
0.8
0
Max
3.6
Unit
V
supply voltage
input voltage
VI
3.6
V
VO
output voltage
Active mode
0
VCC
3.6
V
Power-down mode; VCC = 0 V
0
V
Tamb
ambient temperature
−40
0
+125
200
°C
ns/V
∆t/∆V
input transition rise and fall rate
VCC = 0.8 V to 3.6 V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
VIH
HIGH-level input voltage
VCC = 0.8 V
0.70 × VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.65 × VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.30 × VCC
0.35 × VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
V
CC − 0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VI = VIH or VIL
0.75 × VCC
1.11
1.32
2.05
1.9
2.72
2.6
VOL
LOW-level output voltage
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
V
V
V
V
V
V
V
0.3 × VCC
0.31
0.31
0.31
0.44
0.31
0.44
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
5 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
±0.1
±0.1
Unit
µA
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
-
-
IOZ
OFF-state output current
VI = VIH or VIL; VO = 0 V to 3.6 V;
µA
VCC = 0 V to 3.6 V
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
±0.2
±0.2
µA
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
-
-
-
-
-
-
-
-
0.5
40
110
1
µA
µA
µA
µA
V
[1]
[1]
[2]
∆ICC
additional supply current
data input; VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
nOE input; VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
all inputs; VI = GND to 3.6 V;
nOE = GND; VCC = 0.8 V to 3.6 V
CI
input capacitance
output capacitance
VI = GND or VCC; VCC = 0 V to 3.6 V
output enabled; VO = GND; VCC = 0 V
-
-
-
0.8
1.4
1.3
-
-
-
pF
pF
pF
CO
output disabled; VO = GND or VCC
CC = 0 V to 3.6 V
;
V
Tamb = −40 °C to +85 °C
VIH HIGH-level input voltage
VCC = 0.8 V
0.70 × VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.65 × VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.30 × VCC
0.35 × VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
V
CC − 0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.7 × VCC
1.03
1.30
1.97
1.85
2.67
2.55
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
6 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI = VIH or VIL; VO = 0 V to 3.6 V;
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
0.3 × VCC
0.37
0.35
0.33
0.45
0.33
0.45
±0.5
±0.5
V
V
V
V
V
V
V
II
input leakage current
µA
µA
IOZ
OFF-state output current
VCC = 0 V to 3.6 V
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
±0.5
±0.6
µA
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
-
-
-
-
-
-
-
-
0.9
50
120
1
µA
µA
µA
µA
V
[1]
[1]
[2]
∆ICC
additional supply current
data input; VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
nOE input; VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
all inputs; VI = GND to 3.6 V;
nOE = GND; VCC = 0.8 V to 3.6 V
Tamb = −40 °C to +125 °C
VIH HIGH-level input voltage
VCC = 0.8 V
0.75 × VCC
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 0.8 V
0.70 × VCC
-
1.6
-
2.0
-
VIL
LOW-level input voltage
-
-
-
-
0.25 × VCC
0.30 × VCC
0.7
VCC = 0.9 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
0.9
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
V
CC − 0.11 -
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
0.6 × VCC
0.93
1.17
1.77
1.67
2.40
2.30
-
-
-
-
-
-
-
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
7 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI = VIH or VIL; VO = 0 V to 3.6 V;
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11
V
0.33 × VCC
0.41
V
V
0.39
V
0.36
V
0.50
V
0.36
V
0.50
V
II
input leakage current
±0.75
±0.75
µA
µA
IOZ
OFF-state output current
VCC = 0 V to 3.6 V
IOFF
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
±0.75
±0.75
µA
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
CC = 0 V to 0.2 V
V
ICC
supply current
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
-
-
-
-
-
-
-
-
1.4
75
180
1
µA
µA
µA
µA
V
[1]
[1]
[2]
∆ICC
additional supply current
data input; VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
nOE input; VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
V
all inputs; VI = GND to 3.6 V;
nOE = GND; VCC = 0.8 V to 3.6 V
[1] One input at VCC − 0.6 V, other input at VCC or GND.
[2] To show ICC remains very low when the input-disable feature is enabled.
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Typ[1] Max Min
Max Max
(85 °C) (125 °C)
Unit
Min
CL = 5 pF
[2]
tpd
propagation delay nA to nY; see Figure 8
VCC = 0.8 V
-
20.6
5.5
3.9
3.2
2.6
2.4
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
2.8
2.2
1.9
1.6
1.4
10.5 2.5
11.7
7.3
6.1
4.3
3.9
12.9
8.1
6.7
4.9
4.4
VCC = 1.4 V to 1.6 V
6.1
4.8
3.6
3.1
2.0
1.7
1.4
1.2
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
8 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1] Max Min
Max
Max
(85 °C) (125 °C)
[3]
ten
enable time
nOE to nY; see Figure 9
VCC = 0.8 V
-
69.9
6.1
4.2
3.4
2.6
2.4
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
nOE to nY; see Figure 9
VCC = 0.8 V
3.1
2.5
2.1
1.8
1.7
11.8 2.9
13.9
7.7
6.2
4.5
3.5
15.4
8.3
6.8
5.0
3.9
6.6
5.1
3.7
3.1
2.3
2.0
1.7
1.7
[4]
tdis
disable time
-
14.3
4.3
3.2
3.0
2.2
2.5
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
2.7
2.1
2.0
1.4
1.7
6.5
4.4
4.3
2.9
3.2
2.7
2.1
2.0
1.4
1.7
7.3
5.1
5.0
3.3
3.4
8.2
5.7
5.7
4.1
3.9
CL = 10 pF
[2]
[3]
[4]
tpd
ten
tdis
propagation delay nA to nY; see Figure 8
VCC = 0.8 V
-
24.0
6.4
4.5
3.8
3.2
3.0
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
3.2
2.1
1.9
2.1
1.8
12.3 3.0
13.8
8.5
6.8
5.3
4.6
15.2
9.4
7.6
5.9
5.2
VCC = 1.4 V to 1.6 V
7.3
5.5
4.2
3.8
1.9
1.7
1.6
1.6
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
enable time
nOE to nY; see Figure 9
VCC = 0.8 V
-
73.7
6.9
4.8
3.9
3.2
3.0
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
nOE to nY; see Figure 9
VCC = 0.8 V
3.6
2.3
2.0
1.8
1.7
13.5 3.4
15.8
8.6
6.8
5.3
4.3
17.5
9.4
7.4
5.9
4.8
7.7
5.8
4.3
3.9
2.2
1.9
1.7
1.7
disable time
-
32.7
5.4
4.1
4.2
3.0
3.8
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
3.4
2.2
2.2
1.7
2.1
7.9
5.5
5.6
3.8
4.8
3.4
2.2
1.9
1.7
1.7
8.8
6.2
6.3
4.5
5.0
9.9
7.1
7.1
5.1
5.6
74AUP2G125_6
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Product data sheet
Rev. 06 — 27 November 2009
9 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1] Max Min
Max
Max
(85 °C) (125 °C)
CL = 15 pF
[2]
[3]
[4]
tpd
ten
tdis
propagation delay nA to nY; see Figure 8
VCC = 0.8 V
-
27.4
7.2
5.1
4.3
3.7
3.5
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
3.6
3.0
2.2
2.0
2.0
14.1 3.3
15.8
9.8
7.9
6.0
5.4
17.5
10.9
8.8
6.7
6.1
VCC = 1.4 V to 1.6 V
8.1
6.3
4.9
4.4
2.5
2.0
1.8
1.8
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
enable time
nOE to nY; see Figure 9
VCC = 0.8 V
-
77.5
7.7
5.3
4.4
3.6
3.5
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
nOE to nY; see Figure 9
VCC = 0.8 V
4.0
3.0
2.3
2.1
2.0
15.2 3.7
17.6
9.8
7.7
6.1
4.9
19.6
10.7
8.5
6.8
5.5
8.4
6.5
5.0
4.4
2.5
2.1
2.0
1.9
disable time
-
60.8
6.5
5.0
5.3
3.8
5.0
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
4.3
3.0
3.0
2.1
2.9
9.2
6.5
7.0
4.9
6.2
3.7
2.5
2.1
2.0
1.9
10.3
7.4
7.4
5.1
6.6
11.6
8.4
8.9
6.4
7.4
CL = 30 pF
tpd
[2]
propagation delay nA to nY; see Figure 8
VCC = 0.8 V
-
37.4
9.5
6.7
5.6
4.8
4.6
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
4.8
4.0
2.9
2.7
2.7
19.0 4.4
10.8 3.0
21.6
13.0
10.3
7.8
7.5
24.0
14.5
11.5
8.7
8.3
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
8.4
6.3
5.8
2.6
2.5
2.5
VCC = 3.0 V to 3.6 V
[3]
ten
enable time
nOE to nY; see Figure 9
VCC = 0.8 V
-
88.9
9.9
6.8
5.6
4.8
4.6
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
5.2
4.0
3.0
2.7
2.7
19.8 4.8
10.8 3.1
22.8
12.6
10.2
7.8
6.9
25.3
14.1
11.3
8.8
7.7
8.5
6.5
6.0
2.8
2.6
2.6
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
10 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1] Max Min
Max
Max
(85 °C) (125 °C)
[4]
tdis
disable time
nOE to nY; see Figure 9
VCC = 0.8 V
-
49.9
9.9
7.7
8.7
6.2
8.7
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
6.0
4.4
5.1
3.6
5.2
13.3 4.8
9.6 3.1
11.1 2.8
7.6 2.6
10.5 2.6
14.8
10.8
12.4
8.6
16.5
12.1
13.8
9.6
10.8
13.1
CL = 5 pF, 10 pF, 15 pF and 30 pF
[5]
CPD power dissipation output enabled; fi = 1 MHz;
capacitance
VI = GND to VCC
VCC = 0.8 V
-
-
-
-
-
-
2.7
2.8
2.9
3.0
3.6
4.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pF
pF
pF
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
[1] All typical values are measured at nominal VCC
[2] tpd is the same as tPLH and tPHL
[3] ten is the same as tPZH and tPZL
[4] tdis is the same as tPHZ and tPLZ
.
.
.
.
[5] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
11 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
12. Waveforms
V
I
V
nA input
M
GND
t
t
PHL
PLH
V
OH
V
nY output
M
V
OL
mna230
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 8. The data input (nA) to output (nY) propagation delays
Table 9.
Measurement points
Supply voltage
VCC
Output
VM
Input
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 × VCC
0.5 × VCC
VCC
≤ 3.0 ns
V
I
nOE input
V
M
GND
t
t
PZL
PLZ
V
CC
output
LOW-to-OFF
OFF-to-LOW
V
M
V
X
V
OL
t
t
PHZ
PZH
V
OH
V
Y
output
HIGH-to-OFF
OFF-to-HIGH
V
M
GND
outputs
enabled
outputs
enabled
outputs
disabled
mna362
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 9. Enable and disable times
Table 10. Measurement points
Supply voltage
VCC
Input
Output
VM
VM
VX
VY
0.8 V to 1.6 V
1.65 V to 2.7 V
3.0 V to 3.6 V
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
VOL + 0.1 V
VOL + 0.15 V
VOL + 0.3 V
VOH − 0.1 V
VOH − 0.15 V
VOH − 0.3 V
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
12 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
V
V
EXT
CC
5 kΩ
V
V
O
I
G
DUT
R
T
C
L
R
L
001aac521
Test data is given in Table 11.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 10. Load circuitry for switching times
Table 11. Test data
Supply voltage
VCC
Load
VEXT
[1]
CL
RL
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
0.8 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF
5 kΩ or 1 MΩ open
GND
2 × VCC
[1] For measuring enable and disable times RL = 5 kΩ.
For measuring propagation delays, set-up and hold times, and pulse width, RL = 1 MΩ.
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
13 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
13. Package outline
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.5
0.12
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
Fig 11. Package outline SOT765-1 (VSSOP8)
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
14 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm
SOT833-1
b
1
2
3
4
4×
(2)
L
L
1
e
8
7
6
5
e
1
e
1
e
1
8×
(2)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
1
L
L
1
max max
0.25
0.17
2.0
1.9
1.05
0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
- - -
07-11-14
07-12-07
SOT833-1
- - -
MO-252
Fig 12. Package outline SOT833-1 (XSON8)
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
15 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.35 x 1 x 0.5 mm
SOT1089
E
terminal 1
index area
D
A
A
1
detail X
(2)
(4×)
e
b
(2)
(8×)
L
4
5
e
1
1
8
terminal 1
index area
b
1
X
0
0.5
1 mm
scale
Dimensions
Unit
(1)
A
A
b
b
1
D
E
e
e
1
L
1
max 0.5 0.04 0.35 0.40 1.40 1.05
0.20
0.30 0.35 1.35 1.00 0.55 0.35 0.15
0.27 0.32 1.30 0.95 0.12
mm nom
min
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
sot1089_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-04-10
09-10-22
SOT1089
MO-252
Fig 13. Package outline SOT1089 (XSON8)
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
16 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
XSON8U: plastic extremely thin small outline package; no leads;
8 terminals; UTLP based; body 3 x 2 x 0.5 mm
SOT996-2
D
B
A
E
A
A
1
detail X
terminal 1
index area
e
1
C
M
M
v
C A
C
B
b
e
L
1
y
y
w
C
1
1
4
L
2
L
8
5
X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
1
b
D
E
e
e
1
L
L
L
v
w
y
y
1
1
2
max
0.05 0.35
0.00 0.15
2.1
1.9
3.1
2.9
0.5
0.3
0.15
0.05
0.6
0.4
mm
0.5
0.5
1.5
0.1
0.05 0.05
0.1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
- - -
JEDEC
JEITA
07-12-18
07-12-21
SOT996-2
- - -
Fig 14. Package outline SOT996-2 (XSON8U)
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
17 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
XQFN8U: plastic extremely thin quad flat package; no leads;
8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm
SOT902-1
D
B
A
terminal 1
index area
E
A
A
1
detail X
e
L
1
e
C
y
C
1
y
L
M
M
v
C A
C
B
4
w
5
6
7
3
2
metal area
not for soldering
e
1
b
e
1
1
terminal 1
index area
8
X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
1
b
D
E
e
e
1
L
L
v
w
y
y
1
1
max
0.05 0.25 1.65 1.65
0.00 0.15 1.55 1.55
0.35 0.15
0.25 0.05
mm
0.5
0.55
0.5
0.1
0.05 0.05 0.05
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
MO-255
JEITA
05-11-25
07-11-14
SOT902-1
- - -
- - -
Fig 15. Package outline SOT902-1 (XQFN8U)
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
18 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
14. Abbreviations
Table 12. Abbreviations
Acronym
CDM
Description
Charged Device Model
Complementary Metal-Oxide Semiconductor
Device Under Test
CMOS
DUT
ESD
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
15. Revision history
Table 13. Revision history
Document ID
Release date
20091127
Data sheet status
Change notice
Supersedes
74AUP2G125_6
Modifications:
Product data sheet
-
74AUP2G125_5
• Added type number 74AUP2G125GF (XSON8 package)
74AUP2G125_5
74AUP2G125_4
74AUP2G125_3
74AUP2G125_2
74AUP2G125_1
20090202
20090122
20080409
20070419
20061017
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
-
-
-
-
-
74AUP2G125_4
74AUP2G125_3
74AUP2G125_2
74AUP2G125_1
-
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
19 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
74AUP2G125_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 27 November 2009
20 of 21
74AUP2G125
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
18. Contents
1
2
3
4
5
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
7
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19
8
9
10
11
12
13
14
15
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 November 2009
Document identifier: 74AUP2G125_6
相关型号：
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