74HC2G17GW_技术文档

74HC2G17; 74HCT2G17

Dual non-inverting Schmitt trigger

Rev. 01 — 6 October 2006

Product data sheet

1. General description

The 74HC2G17; 74HCT2G17 is a high-speed Si-gate CMOS device.

The 74HC2G17; 74HCT2G17 provides two non-inverting Schmitt trigger buffers. They are

capable of transforming slowly changing input signals into sharply deﬁned, jitter-free

output signals.

The inputs switch at different points for positive and negative-going signals. The difference

between the positive voltage V_T+and the negative voltage V_T−is deﬁned as the input

hysteresis voltage V_H.

2. Features

I Wide supply voltage range from 2.0 V to 6.0 V

I Complies with JEDEC standard no. 7A

I High noise immunity

I ESD protection:

N HBM JESD22-A114-D exceeds 2000 V

N MM JESD22-A115-A exceeds 200 V

I Low power dissipation

I Balanced propagation delays

I Unlimited input rise and fall times

I Multiple package options

I Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C

3. Applications

I Wave and pulse shaper for highly noisy environments

I Astable multivibrators

I Monostable multivibrators

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

4. Ordering information

Table 1.

Ordering information

Type number

Package

Temperature range Name

Description

Version

SOT363

SOT457

SOT363

SOT457

74HC2G17GW

74HC2G17GV

74HCT2G17GW

74HCT2G17GV

−40 °C to +125 °C

SC-88

SC-74

SC-88

SC-74

plastic surface-mounted package; 6 leads

plastic surface-mounted package (TSOP6); 6 leads

plastic surface-mounted package; 6 leads

plastic surface-mounted package (TSOP6); 6 leads

5. Marking

Table 2.

Marking

Type number

74HC2G17GW

74HC2G17GV

74HCT2G17GW

74HCT2G17GV

Marking code

HV

TV

6. Functional diagram

1

3

6

4

1

3

1A

2A

1Y

2Y

6

4

mnb067

mnb066

Fig 1. Logic symbol

Fig 2. IEC logic symbol

1A

1Y

2A

2Y

mnb068

Fig 3. Logic diagram

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

2 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

7. Pinning information

7.1 Pinning

74HC2G17

74HCT2G17

1

2

3

6

5

4

1A

GND

2A

1Y

V

CC

2Y

001aaf201

Fig 4. Pin conﬁguration

7.2 Pin description

Table 3.

Symbol

1A

Pin description

1

Description

data input

GND

2A

2

ground (0 V)

data input

3

2Y

4

data output

supply voltage

data output

V_CC

5

1Y

6

8. Functional description

Table 4.

Function table^[1]

Input

nA

L

Output

nY

L

H

[1] H = HIGH voltage level;

L = LOW voltage level.

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

3 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

9. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Max Unit

V_CC

I_IK

supply voltage

−0.5 +7.0

V

[1]

input clamping current

output clamping current

output current

V_I< −0.5 V or V_I> V_CC+ 0.5 V

V_O< −0.5 V or V_O> V_CC+ 0.5 V

V_O= −0.5 V to V_CC+ 0.5 V

-

±20

±25

50

mA

I_OK

I_O

-

I_CC

I_GND

T_stg

P_tot

supply current

-

ground current

-

−50

storage temperature

total power dissipation

−65

+150 °C

250 mW

[2]

-

[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] For SC-88 and SC-74 packages: above 87.5 °C the value of P_totderates linearly with 4.0 mW/K.

10. Recommended operating conditions

Table 6.

Symbol

Recommended operating conditions

Parameter

Conditions

Min

Typ

Max

Unit

Type 74HC2G17

V_CC

V_I

supply voltage

2.0

0

5.0

6.0

V

input voltage

-

V_CC

+125

V

V_O

output voltage

0

-

V

T_amb

ambient temperature

−40

+25

°C

Type 74HCT2G17

V_CC

V_I

supply voltage

4.5

0

5.0

5.5

V

input voltage

-

V_CC

+125

V

V_O

output voltage

0

-

V

T_amb

ambient temperature

−40

+25

°C

11. Static characteristics

Table 7.

Static characteristics for 74HC2G17

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

T_amb= 25 °C

V_OH

Parameter

Conditions

Min

Typ

Max

Unit

HIGH-level output voltage

V_I= V_IHor V_IL

I_O= −20 µA; V_CC= 2.0 V

I_O= −20 µA; V_CC= 4.5 V

I_O= −20 µA; V_CC= 6.0 V

I_O= −4.0 mA; V_CC= 4.5 V

I_O= −5.2 mA; V_CC= 6.0 V

1.9

4.4

5.9

2.0

-

V

4.5

6.0

4.18

5.68

4.32

5.81

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

4 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

Table 7.

Static characteristics for 74HC2G17 …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_OL

LOW-level output voltage

V_I= V_IHor V_IL

I_O= 20 µA; V_CC= 2.0 V

I_O= 20 µA; V_CC= 4.5 V

I_O= 20 µA; V_CC= 6.0 V

I_O= 4.0 mA; V_CC= 4.5 V

I_O= 5.2 mA; V_CC= 6.0 V

V_I= GND or V_CC; V_CC= 6.0 V

V_I= GND or V_CC; I_O= 0 A;

-

0

0.1

V

0

0.1

V

0

0.1

V

0.15

0.26

±0.1

1.0

V

0.16

V

I_I

input leakage current

supply current

-

µA

I_CC

V_CC= 6.0 V

C_I

input capacitance

-

2.0

-

pF

T_amb= −40 °C to +85 °C

V_OHHIGH-level output voltage

V_I= V_IHor V_IL

I_O= −20 µA; V_CC= 2.0 V

I_O= −20 µA; V_CC= 4.5 V

I_O= −20 µA; V_CC= 6.0 V

I_O= −4.0 mA; V_CC= 4.5 V

I_O= −5.2 mA; V_CC= 6.0 V

V_I= V_IHor V_IL

1.9

-

V

4.4

5.9

4.13

5.63

V_OL

LOW-level output voltage

I_O= 20 µA; V_CC= 2.0 V

I_O= 20 µA; V_CC= 4.5 V

I_O= 20 µA; V_CC= 6.0 V

I_O= 4.0 mA; V_CC= 4.5 V

I_O= 5.2 mA; V_CC= 6.0 V

V_I= GND or V_CC; V_CC= 6.0 V

V_I= GND or V_CC; I_O= 0 A;

-

0.1

V

0.1

V

0.1

V

0.33

±1.0

10.0

V

I_I

input leakage current

supply current

µA

I_CC

V_CC= 6.0 V

T_amb= −40 °C to +125 °C

V_OH

HIGH-level output voltage

V_I= V_IHor V_IL

I_O= −20 µA; V_CC= 2.0 V

I_O= −20 µA; V_CC= 4.5 V

I_O= −20 µA; V_CC= 6.0 V

I_O= −4.0 mA; V_CC= 4.5 V

I_O= −5.2 mA; V_CC= 6.0 V

1.9

4.4

5.9

3.7

5.2

-

V

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

5 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

Table 7.

Static characteristics for 74HC2G17 …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_OL

LOW-level output voltage

V_I= V_IHor V_IL

I_O= 20 µA; V_CC= 2.0 V

I_O= 20 µA; V_CC= 4.5 V

I_O= 20 µA; V_CC= 6.0 V

I_O= 4.0 mA; V_CC= 4.5 V

I_O= 5.2 mA; V_CC= 6.0 V

V_I= GND or V_CC; V_CC= 6.0 V

V_I= GND or V_CC; I_O= 0 A;

-

0.1

V

0.1

V

0.1

V

0.4

V

0.4

V

I_I

input leakage current

supply current

±1.0

20.0

µA

I_CC

V_CC= 6.0 V

Table 8.

Static characteristics for 74HCT2G17

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

T_amb= 25 °C

V_OH

Parameter

Conditions

Min

Typ

Max

Unit

HIGH-level output voltage

V_I= V_IHor V_IL; V_CC= 4.5 V

I_O= −20 µA

4.4

4.5

-

V

I_O= −4.0 mA

4.18

4.32

V_OL

LOW-level output voltage

V_I= V_IHor V_IL; V_CC= 4.5 V

I_O= −20 µA

-

0

0.1

V

I_O= −4.0 mA

0.15

0.26

±0.1

1.0

V

I_I

input leakage current

supply current

V_I= GND or V_CC; V_CC= 5.5 V

-

µA

I_CC

V_I= GND or V_CC; I_O= 0 A;

V

_CC= 5.5 V

V_I= V_CC− 2.1 V;

_CC= 4.5 V to 5.5 V; I_O= 0 A

∆I_CC

additional supply current

input capacitance

-

300

-

µA

V

C_I

2.0

pF

T_amb= −40 °C to +85 °C

V_OHHIGH-level output voltage

V_I= V_IHor V_IL; V_CC= 4.5 V

I_O= −20 µA

4.4

-

V

I_O= −4.0 mA

4.13

V_OL

LOW-level output voltage

V_I= V_IHor V_IL; V_CC= 4.5 V

I_O= −20 µA

-

0.1

V

I_O= −4.0 mA

0.33

±1.0

10.0

V

I_I

input leakage current

supply current

V_I= GND or V_CC; V_CC= 5.5 V

µA

I_CC

V_I= GND or V_CC; I_O= 0 A;

V_CC= 5.5 V

∆I_CC

additional supply current

V_I= V_CC− 2.1 V;

-

375

µA

V_CC= 4.5 V to 5.5 V; I_O= 0 A

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

6 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

Table 8.

Static characteristics for 74HCT2G17 …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

T_amb= −40 °C to +125 °C

V_OHHIGH-level output voltage

Parameter

Conditions

Min

Typ

Max

Unit

V_I= V_IHor V_IL; V_CC= 4.5 V

I_O= −20 µA

4.4

3.7

-

V

I_O= −4.0 mA

V_OL

LOW-level output voltage

V_I= V_IHor V_IL; V_CC= 4.5 V

I_O= −20 µA

-

0.1

V

I_O= −4.0 mA

0.4

V

I_I

input leakage current

supply current

V_I= GND or V_CC; V_CC= 5.5 V

±1.0

20.0

µA

I_CC

V_I= GND or V_CC; I_O= 0 A;

V

_CC= 5.5 V

V_I= V_CC− 2.1 V;

_CC= 4.5 V to 5.5 V; I_O= 0 A

∆I_CC

additional supply current

-

410

µA

V

12. Dynamic characteristics

Table 9.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.

Symbol Parameter

Conditions

25 °C

Typ Max

−40 °C to +125 °C

Unit

Min

Max

(85 °C) (125 °C)

74HC2G17

[1]

[2]

[3]

t_pd

propagation delay

nA to nY; see Figure 5

V_CC= 2.0 V; C_L= 50 pF

V_CC= 4.5 V; C_L= 50 pF

V_CC= 6.0 V; C_L= 50 pF

nY; see Figure 5

-

36

12

10

115

22

-

140

27

175

34

ns

18

22

28

t_t

transition time

V_CC= 2.0 V; C_L= 50 pF

V_CC= 4.5 V; C_L= 50 pF

V_CC= 6.0 V; C_L= 50 pF

V_I= GND to V_CC

-

20

7

75

15

13

-

95

19

16

-

110

22

19

-

ns

pF

5

C_PD

power dissipation

capacitance

10

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

7 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

Table 9.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.

Symbol Parameter

Conditions

25 °C

−40 °C to +125 °C

Unit

Min

Typ Max

Min

Max

(85 °C) (125 °C)

74HCT2G17

[1]

[2]

[3]

t_pd

propagation delay

nA to nY; see Figure 5

V_CC= 4.5 V; C_L= 50 pF

nY; see Figure 5

-

21

29

-

36

45

ns

t_t

transition time

V_CC= 4.5 V; C_L= 50 pF

V_I= GND to V_CC− 1.5 V

-

6

15

-

19

-

22

-

ns

C_PD

power dissipation

capacitance

10

pF

[1] t_pdis the same as t_PLHand t_PHL

[2] t_tis the same as t_TLHand t_THL

[3] C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i× N + Σ(C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF;

V_CC= supply voltage in V;

N = number of inputs switching;

Σ(C_L× V_CC²× f_o) = sum of the outputs.

13. Waveforms

V

I

nA input

GND

V

M

t

PLH

PHL

V

OH

90 %

nY output

10 %

V

OL

t

TLH

THL

001aaf302

Measurement points are given in Table 10.

V_OLand V_OHare typical voltage output drop that occur with the output load.

Fig 5. The data input (nA) to output (nY) propagation delays and output transition times

Table 10. Measurement points

Type

Input

V_M

Output

V_M

V_I

t_r= t_f

74HC2G17

0.5V_CC

1.3 V

GND to V_CC

GND to 3.0 V

6.0 ns

0.5V_CC

1.3 V

74HCT2G17

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

8 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

V

CC

V

R

= 1 kΩ

I

O

L

PULSE

GENERATOR

open

D.U.T

R

C

50 pF

T

L

mgk563

Test data is given in Table 11.

Deﬁnitions test circuit:

R_L= Load resistance.

C_L= Load capacitance including jig and probe capacitance.

R_T= Termination resistance should be equal to output impedance Z_oof the pulse generator.

Fig 6. Load circuitry for switching times

Table 11. Test data

Type

Input

Test

V_I

t_r, t_f

6 ns

t_PHL, t_PLH

open

74HC2G17

GND to V_CC

GND to 3.0 V

74HCT2G17

open

14. Transfer characteristics

Table 12. Transfer characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.

Symbol Parameter

Conditions

25 °C

−40 °C to +125 °C

Unit

Min

Typ Max

Min

Max

(85 °C) (125 °C)

74HC2G17

V_T+

V_T−

V_H

positive-going

threshold voltage

see Figure 7, Figure 8

V_CC= 2.0 V

1.00 1.18 1.50 1.00

2.30 2.60 3.15 2.30

3.00 3.46 4.20 3.00

1.50

3.15

4.20

1.50

3.15

4.20

V

V_CC= 4.5 V

V_CC= 6.0 V

negative-going

threshold voltage

see Figure 7, Figure 8

V_CC= 2.0 V

0.30 0.60 0.90 0.30

1.13 1.47 2.00 1.13

1.50 2.06 2.60 1.50

0.90

2.00

2.60

0.90

2.00

2.60

V

V_CC= 4.5 V

V_CC= 6.0 V

hysteresis voltage

V_T+− V_T−; see Figure 7,

Figure 8 and Figure 9

V_CC= 2.0 V

0.30 0.60 1.00 0.30

0.60 1.13 1.40 0.60

0.80 1.40 1.70 0.80

1.00

1.40

1.70

1.00

1.40

1.70

V

V_CC= 4.5 V

V_CC= 6.0 V

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

9 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

Table 12. Transfer characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.

Symbol Parameter

Conditions

25 °C

−40 °C to +125 °C

Unit

Min

Typ Max

Min

Max

(85 °C) (125 °C)

74HCT2G17

V_T+

V_T−

V_H

positive-going

threshold voltage

see Figure 7 and Figure 8

V_CC= 4.5 V

1.20 1.58 1.90 1.20

1.40 1.78 2.10 1.40

1.90

2.10

1.90

2.10

V

V_CC= 5.5 V

negative-going

threshold voltage

see Figure 7 and Figure 8

V_CC= 4.5 V

0.50 0.87 1.20 0.50

0.60 1.11 1.40 0.60

1.20

1.40

1.20

1.40

V

V_CC= 5.5 V

hysteresis voltage

V_T+− V_T−; see Figure 7,

Figure 8 and Figure 10

V_CC= 4.5 V

0.40 0.71

0.40 0.67

-

0.40

-

V

V_CC= 5.5 V

15. Waveforms transfer characteristics

V

T+

V

O

V

I

V

H

V

T−

V

O

V

I

mnb155

V

H

V

T+

T−

mnb154

V_T+and V_T-limits at 70 % and 20 %.

Fig 7. Transfer characteristic

Fig 8. Deﬁnition of V_T+, V_T-and V_H

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

10 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

mna029

mna028

1.0

100

I

CC

(mA)

I

CC

(µA)

0.8

0.6

0.4

0.2

0

50

0

2.5

5.0

0

1.0

2.0

V (V)

I

V (V)

I

a. V_CC= 2.0 V

b. V_CC= 4.5 V

mna030

1.6

I

CC

(mA)

0.8

0

3.0

6.0

V (V)

I

c.

V_CC= 6.0 V

Fig 9. Typical 74HC2G17 transfer characteristics

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

11 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

mna031

mna032

2.0

3.0

I

CC

I

CC

(mA)

2.0

1.0

0

2.5

5.0

0

3.0

6.0

V (V)

I

V (V)

I

a. V_CC= 4.5 V.

b. V_CC= 5.5 V.

Fig 10. Typical 74HCT2G17 transfer characteristics

16. Application information

The slow input rise and fall times cause additional power dissipation, this can be

calculated using the following formula:

P_add= f_i× (t_r× ∆I_CC(AV)+ t_f× ∆I_CC(AV)) × V_CCwhere:

P_add= additional power dissipation (µW);

f_i= input frequency (MHz);

t_r= input rise time (ns); 10 % to 90 %;

t_f= input fall time (ns); 90 % to 10 %;

∆I_CC(AV)= average additional supply current (µA).

∆I_CC(AV)differs with positive or negative input transitions, as shown in Figure 11 and

Figure 12.

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

12 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

mna036

200

∆I

CC(AV)

(mA)

150

100

50

positive-going

edge

negative-going

edge

0

2.0

4.0

6.0

V

(V)

CC

Fig 11. ∆I_CC(AV)as a function of V_CCfor 74HC2G17; linear change of V_Ibetween 0.1V_CCto 0.9V_CC

mna058

200

∆I

CC(AV)

(µA)

150

100

50

positive-going

edge

negative-going

edge

0

2

4

6

V

(V)

CC

Fig 12. ∆I_CC(AV)as a function of V_CCfor 74HCT2G17; linear change of V_Ibetween 0.1V_CCto 0.9V_CC

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

13 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

17. Package outline

Plastic surface-mounted package; 6 leads

SOT363

D

B

E

A

X

y

H

v

M

A

E

6

5

4

Q

pin 1

index

A

1

2

3

c

e

1

b

p

L

p

w

M B

e

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

b

c

D

E

e

H

L

Q

v

w

y

p

1

E

max

0.30

0.20

1.1

0.8

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.25

0.15

mm

0.1

1.3

0.65

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

04-11-08

06-03-16

SOT363

SC-88

Fig 13. Package outline SOT363 (SC-88)

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

14 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

Plastic surface-mounted package (TSOP6); 6 leads

SOT457

D

B

E

A

X

y

H

v

M

A

E

6

5

4

Q

pin 1

index

A

1

c

1

2

3

L

p

e

b

p

w

M B

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

b

c

D

E

e

H

L

Q

v

w

y

p

1

p

E

0.1

0.013

0.40

0.25

1.1

0.9

0.26

0.10

3.1

2.7

1.7

1.3

3.0

2.5

0.6

0.2

0.33

0.23

mm

0.95

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

05-11-07

06-03-16

SOT457

SC-74

Fig 14. Package outline SOT457 (SC-74)

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

15 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

18. Abbreviations

Table 13. Abbreviations

Acronym

CMOS

ESD

Description

Complementary Metal Oxide Semiconductor

ElectroStatic Discharge

Human Body Model

HBM

MM

Machine Model

DUT

Device Under Test

19. Revision history

Table 14. Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

74HC_HCT2G17_1 20061006

Product data sheet

-

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

16 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

20. Legal information

20.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

malfunction of a NXP Semiconductors product can reasonably be expected to

20.2 Deﬁnitions

result in personal injury, death or severe property or environmental damage.

NXP Semiconductors accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or applications and therefore

such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

20.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

20.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

21. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

74HC_HCT2G17_1

Product data sheet

Rev. 01 — 6 October 2006

17 of 18

74HC2G17; 74HCT2G17

NXP Semiconductors

Dual non-inverting Schmitt trigger

22. Contents

1

2

3

4

5

6

General description . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

7

7.1

7.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

8

Functional description . . . . . . . . . . . . . . . . . . . 3

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

Recommended operating conditions. . . . . . . . 4

Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Transfer characteristics. . . . . . . . . . . . . . . . . . . 9

Waveforms transfer characteristics. . . . . . . . 10

Application information. . . . . . . . . . . . . . . . . . 12

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16

9

10

11

12

13

14

15

16

17

18

19

20

Legal information. . . . . . . . . . . . . . . . . . . . . . . 17

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17

20.1

20.2

20.3

20.4

21

22

Contact information. . . . . . . . . . . . . . . . . . . . . 17

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 October 2006

Document identifier: 74HC_HCT2G17_1


型号：	74HC2G17GW
厂家：	NXP
描述：	Dual non-inverting Schmitt trigger 双非反相施密特触发器触发器逻辑集成电路光电二极管
文件：	总18页 (文件大小：96K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

74HC2G17GW [NXP]

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