74HCT3G14DP,125 [NXP]
74HC(T)3G14 - Triple inverting Schmitt trigger TSSOP 8-Pin;型号: | 74HCT3G14DP,125 |
厂家: | NXP |
描述: | 74HC(T)3G14 - Triple inverting Schmitt trigger TSSOP 8-Pin |
文件: | 总18页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
74HC3G14; 74HCT3G14
Triple inverting Schmitt trigger
Rev. 03 — 8 May 2009
Product data sheet
1. General description
The 74HC3G14; 74HCT3G14 is a high-speed Si-gate CMOS device.
The 74HC3G14; 74HCT3G14 provides three inverting buffers with Schmitt trigger inputs
which accept standard input signals. They are capable of transforming slowly changing
input signals into sharply defined, jitter-free output signals.
2. Features
I Wide supply voltage range from 2.0 V to 6.0 V
I High noise immunity
I Low power dissipation
I Balanced propagation delays
I Unlimited input rise and fall times
I Multiple package options
I ESD protection:
N HBM JESD22-A114E exceeds 2000 V
N MM JESD22-A115-A exceeds 200 V
I Specified from −40 °C to +85 °C and −40 °C to +125 °C
3. Applications
I Wave and pulse shaper for highly noisy environments
I Astable multivibrators
I Monostable multivibrators
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74HC3G14DP
74HCT3G14DP
74HC3G14DC
74HCT3G14DC
74HC3G14GD
74HCT3G14GD
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
TSSOP8
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
VSSOP8
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
XSON8U plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3 × 2 × 0.5 mm
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
5. Marking
Table 2.
Marking
Type number
74HC3G14DP
74HCT3G14DP
74HC3G14DC
74HCT3G14DC
74HC3G14GD
74HCT3G14GD
Marking code
H14
T14
H14
T14
H14
T14
6. Functional diagram
1A
3Y
2A
1Y
3A
2Y
A
Y
001aah728
mna025
001aah729
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
(one Schmitt trigger)
7. Pinning information
7.1 Pinning
74HC3G14
74HCT3G14
1A
3Y
1
2
3
4
8
7
6
5
V
CC
74HC3G14
74HCT3G14
1Y
3A
2Y
2A
1
2
3
4
8
7
6
5
1A
3Y
V
CC
1Y
3A
2Y
GND
2A
GND
001aak036
Transparent top view
001aak035
Fig 4. Pin configuration SOT505-2 (TSSOP8) and
SOT765-1 (VSSOP8)
Fig 5. Pin configuration SOT996-2 (XSON8U)
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
2 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
7.2 Pin description
Table 3.
Symbol
1A, 2A, 3A
GND
Pin description
Pin
1, 3, 6
4
Description
data input
ground (0 V)
data output
supply voltage
1Y, 2Y, 3Y
VCC
7, 5, 2
8
8. Functional description
Table 4.
Function table[1]
Input
nA
L
Output
nY
H
H
L
[1] H = HIGH voltage level; L = LOW voltage level.
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Max
+7.0
±20
±20
±25
+50
-
Unit
V
VCC
IIK
supply voltage
−0.5
[1]
[1]
[1]
[1]
[1]
input clamping current
output clamping current
output current
VI < −0.5 V or VI > VCC + 0.5 V
VO < −0.5 V or VO > VCC + 0.5 V
VO = −0.5 V to VCC + 0.5 V
-
mA
mA
mA
mA
mA
°C
IOK
IO
-
-
ICC
IGND
Tstg
Ptot
supply current
-
ground current
−50
−65
-
storage temperature
total power dissipation
+150
300
[2]
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP8 package: above 55 °C the value of Ptot derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110 °C the value of Ptot derates linearly with 8 mW/K.
For XSON8U package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
3 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
74HC3G14
74HCT3G14
Unit
Min
2.0
0
Typ
5.0
-
Max
6.0
Min
4.5
0
Typ
5.0
-
Max
5.5
VCC
VI
supply voltage
input voltage
V
V
V
VCC
VCC
+125
VCC
VCC
VO
output voltage
ambient temperature
0
-
0
-
Tamb
−40
+25
−40
+25
+125 °C
11. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max
Min
Max
Min
Max
74HC3G14
VOH
HIGH-level
VI = VT+ or VT−
output voltage
IO = −20 µA; VCC = 2.0 V
IO = −20 µA; VCC = 4.5 V
IO = −20 µA; VCC = 6.0 V
IO = −4.0 mA; VCC = 4.5 V
IO = −5.2 mA; VCC = 6.0 V
VI = VT+ or VT−
1.9
4.4
5.9
2.0
4.5
6.0
-
-
-
-
-
1.9
4.4
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
5.9
4.18 4.32
5.68 5.81
4.13
5.63
VOL
LOW-level
output voltage
IO = 20 µA; VCC = 2.0 V
IO = 20 µA; VCC = 4.5 V
IO = 20 µA; VCC = 6.0 V
IO = 4.0 mA; VCC = 4.5 V
IO = 5.2 mA; VCC = 6.0 V
-
-
-
-
-
-
0
0
0
0.1
0.1
0.1
-
-
-
-
-
-
0.1
0.1
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
±1.0
V
V
0.1
V
0.15 0.26
0.16 0.26
0.33
0.33
±1.0
V
V
II
input leakage VI = VCC or GND; VCC = 6.0 V
current
-
±0.1
1.0
-
µA
ICC
CI
supply current per input pin; VCC = 6.0 V;
VI = VCC or GND; IO = 0 A;
-
-
-
-
-
10
-
-
-
20
-
µA
input
2.0
pF
capacitance
74HCT3G14
VOH
VOL
II
HIGH-level
output voltage
VI = VT+ or VT−
IO = −20 µA; VCC = 4.5 V
IO = −4.0 mA; VCC = 4.5 V
VI = VIH or VIL
4.4
4.5
-
-
4.4
-
-
4.4
3.7
-
-
V
V
4.18 4.32
4.13
LOW-level
output voltage
IO = 20 µA; VCC = 4.5 V
IO = 4.0 mA; VCC = 4.5 V
-
-
-
0
0.1
-
-
-
0.1
-
-
-
0.1
0.4
V
0.15 0.26
±0.1
0.33
±1.0
V
input leakage VI = VCC or GND; VCC = 5.5 V
current
-
±1.0
µA
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
4 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max
Min
Max
Min
Max
ICC
supply current per input pin; VCC = 5.5 V;
VI = VCC or GND; IO = 0 A;
-
-
1.0
-
10
-
20
µA
µA
∆ICC
additional
per input;
-
-
300
-
-
375
-
-
-
410
-
supply current VCC = 4.5 V to 5.5 V;
VI = VCC − 2.1 V; IO = 0 A
CI
input
-
2.0
-
pF
capacitance
Table 8.
Transfer characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 11.
Symbol Parameter
Conditions
25 °C
Typ Max
−40 °C to +125 °C
Unit
Min
Min
Max
Max
(85 °C) (125 °C)
74HC3G14
VT+
VT−
VH
positive-going
threshold voltage
see Figure 6, Figure 7
VCC = 2.0 V
1.00 1.18 1.50 1.00
2.30 2.60 3.15 2.30
3.00 3.46 4.20 3.00
1.50
3.15
4.20
1.50
3.15
4.20
V
V
V
VCC = 4.5 V
VCC = 6.0 V
negative-going
threshold voltage
see Figure 6, Figure 7
VCC = 2.0 V
0.30 0.60 0.90 0.30
1.13 1.47 2.00 1.13
1.50 2.06 2.60 1.50
0.90
2.00
2.60
0.90
2.00
2.60
V
V
V
VCC = 4.5 V
VCC = 6.0 V
hysteresis voltage
(VT+ − VT−); see Figure 6,
Figure 7 and Figure 9
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
0.30 0.60 1.00 0.30
0.60 1.13 1.40 0.60
0.80 1.40 1.70 0.80
1.00
1.40
1.70
1.00
1.40
1.70
V
V
V
74HCT3G14
VT+
VT−
VH
positive-going
threshold voltage
see Figure 6, Figure 7
VCC = 4.5 V
1.20 1.58 1.90 1.20
1.40 1.78 2.10 1.40
1.90
2.10
1.90
2.10
V
V
VCC = 5.5 V
negative-going
threshold voltage
see Figure 6, Figure 7
VCC = 4.5 V
0.50 0.87 1.20 0.50
0.60 1.11 1.40 0.60
1.20
1.40
1.20
1.40
V
V
VCC = 5.5 V
hysteresis voltage
(VT+ − VT−); see Figure 6,
Figure 7 and Figure 8
VCC = 4.5 V
VCC = 5.5 V
0.40 0.71
0.40 0.67
-
-
0.40
0.40
-
-
-
-
V
V
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
5 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
11.1 Waveforms transfer characteristics
V
O
V
T+
V
I
V
H
V
T−
V
I
V
V
O
H
V
V
T+
T−
mna207
mna208
mna032
Fig 6. Transfer characteristic
Fig 7. Definition of VT+, VT− and VH
mna031
2.0
3.0
I
CC
I
CC
(mA)
(mA)
2.0
1.0
1.0
0
0
0
2.5
5.0
0
3.0
6.0
V (V)
I
V (V)
I
a. VCC = 4.5 V.
b. VCC = 5.5 V.
Fig 8. Typical 74HCT3G14 transfer characteristics
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
6 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
mna029
mna028
1.0
100
I
CC
(mA)
I
CC
(µA)
0.8
0.6
0.4
0.2
0
50
0
0
2.5
5.0
0
1.0
2.0
V (V)
I
V (V)
I
a. VCC = 2.0 V
b. VCC = 4.5 V
mna030
1.6
I
CC
(mA)
0.8
0
0
3.0
6.0
V (V)
I
c.
VCC = 6.0 V
Fig 9. Typical 74HC3G14 transfer characteristics
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
7 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
12. Dynamic characteristics
Table 9.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 11.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ Max
Min
Max
Max
(85 °C) (125 °C)
74HC3G14
[1]
[2]
[3]
tpd
propagation delay
nA to nY; see Figure 10
VCC = 2.0 V
-
-
-
53
16
13
125
25
-
-
-
155
31
190
38
ns
ns
ns
VCC = 4.5 V
VCC = 6.0 V
21
26
32
tt
transition time
nY; see Figure 10
VCC = 2.0 V
-
-
-
-
20
7
75
15
13
-
-
-
-
-
95
19
16
-
110
22
19
-
ns
ns
ns
pF
VCC = 4.5 V
VCC = 6.0 V
5
CPD
power dissipation
capacitance
VI = GND to VCC
10
74HCT3G14
tpd propagation delay
[1]
[2]
[3]
nA to nY; see Figure 10
VCC = 4.5 V
-
21
32
-
40
48
ns
tt
transition time
nY; see Figure 10
VCC = 4.5 V
-
-
6
15
-
-
-
19
-
22
-
ns
CPD
power dissipation
capacitance
VI = GND to VCC − 1.5 V
10
pF
[1] tpd is the same as tPLH and tPHL
[2] tt is the same as tTLH and tTHL
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
8 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
13. Waveforms
V
I
V
M
V
M
nA input
GND
t
t
PHL
PLH
V
OH
90 %
V
M
V
M
nY output
10 %
V
OL
t
t
TLH
THL
mna722
Measurement points are given in Table 10.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 10. The data input (nA) to output (nY) propagation delays and output transition times
Table 10. Measurement points
Type
Input
VM
Output
VM
74HC3G14
0.5VCC
1.3 V
0.5VCC
1.3 V
74HCT3G14
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
9 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
t
W
V
I
90 %
negative
pulse
V
V
V
M
M
10 %
0 V
t
t
r
f
t
t
f
r
V
I
90 %
positive
pulse
V
M
M
10 %
0 V
t
W
V
V
CC
CC
V
V
O
I
R
L
S1
G
open
DUT
R
T
C
L
001aad983
Test data is given in Table 11.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
Fig 11. Test circuit for measuring switching times
Table 11. Test data
Type
Input
Load
CL
S1 position
tPHL, tPLH
open
VI
tr, tf
RL
74HC3G14
GND to VCC
GND to 3.0 V
≤ 6 ns
≤ 6 ns
50 pF
50 pF
1 kΩ
1 kΩ
74HCT3G14
open
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
10 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
14. Application information
The slow input rise and fall times cause additional power dissipation, which can be
calculated using the following formula:
Padd = fi × (tr × ∆ICC(AV) + tf × ∆ICC(AV)) × VCC where:
Padd = additional power dissipation (µW);
fi = input frequency (MHz);
tr = input rise time (ns); 10 % to 90 %;
tf = input fall time (ns); 90 % to 10 %;
∆ICC(AV) = average additional supply current (µA).
∆ICC(AV) differs with positive or negative input transitions, as shown in Figure 12 and
Figure 13.
An example of a relaxation circuit using the 74HC3G14/74HCT3G14 is shown
in Figure 14.
mna036
200
∆I
CC(AV)
(µA)
150
100
50
positive-going
edge
negative-going
edge
0
0
2.0
4.0
6.0
V
(V)
CC
linear change of VI between 0.1VCC to 0.9VCC
.
Fig 12. ∆ICC(AV) as a function of VCC for 74HC3G14
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
11 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
mna058
200
∆I
CC(AV)
(µA)
150
100
50
positive-going
edge
negative-going
edge
0
0
2
4
6
V
(V)
CC
linear change of VI between 0.1VCC to 0.9VCC
.
Fig 13. ∆ICC(AV) as a function of VCC for 74HCT3G14
R
C
mna035
1
T
1
For 74HC3G14: f =
≈
--- ---------------------
0.8 × RC
1
T
1
For 74HCT3G14: f =
≈
--- ------------------------
0.67 × RC
Fig 14. Relaxation oscillator
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
12 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
15. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A
X
c
H
v
M
y
A
E
Z
5
8
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
max.
0.15
0.00
0.95
0.75
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
4.1
3.9
0.47
0.33
0.70
0.35
8°
0°
mm
1.1
0.65
0.25
0.5
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-01-16
SOT505-2
- - -
Fig 15. Package outline SOT505-2 (TSSOP8)
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
13 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.5
0.12
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
Fig 16. Package outline SOT765-1 (VSSOP8)
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
14 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
XSON8U: plastic extremely thin small outline package; no leads;
8 terminals; UTLP based; body 3 x 2 x 0.5 mm
SOT996-2
D
B
A
E
A
A
1
detail X
terminal 1
index area
e
1
C
M
M
v
C A
C
B
b
e
L
1
y
y
w
C
1
1
4
L
2
L
8
5
X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
1
b
D
E
e
e
1
L
L
L
v
w
y
y
1
1
2
max
0.05 0.35
0.00 0.15
2.1
1.9
3.1
2.9
0.5
0.3
0.15
0.05
0.6
0.4
mm
0.5
0.5
1.5
0.1
0.05 0.05
0.1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
- - -
JEDEC
JEITA
07-12-18
07-12-21
SOT996-2
- - -
Fig 17. Package outline SOT996-2 (XSON8U)
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
15 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
16. Abbreviations
Table 12. Abbreviations
Acronym
CMOS
DUT
Description
Complementary Metal Oxide Semiconductor
Device Under Test
ESD
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
17. Revision history
Table 13. Revision history
Document ID
Release date
20090508
Data sheet status
Change notice
Supersedes
74HC_HCT3G14_3
Modifications:
Product data sheet
-
74HC_HCT3G14_2
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Added type number 74HC3G14GD and 74HCT3G14GD (XSON8U package)
74HC_HCT3G14_2
74HC_HCT3G14_1
20031104
Product specification
-
74HC_HCT3G14_1
20020723
Product specification
-
-
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
16 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
18.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
74HC_HCT3G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 May 2009
17 of 18
74HC3G14; 74HCT3G14
NXP Semiconductors
Triple inverting Schmitt trigger
20. Contents
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 1
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
8
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Waveforms transfer characteristics. . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Application information. . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
9
10
11
11.1
12
13
14
15
16
17
18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
18.1
18.2
18.3
18.4
19
20
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 May 2009
Document identifier: 74HC_HCT3G14_3
相关型号:
74HCT3G14DP-Q100
IC HCT SERIES, TRIPLE 1-INPUT INVERT GATE, PDSO8, 3 MM, PLASTIC, SOT505-2, TSSOP-8, Gate
NXP
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