74LVC1G66GV [NXP]

Bilateral switch; 双向开关
74LVC1G66GV
型号: 74LVC1G66GV
厂家: NXP    NXP
描述:

Bilateral switch
双向开关

开关 逻辑集成电路 光电二极管 驱动
文件: 总22页 (文件大小:148K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
74LVC1G66  
Bilateral switch  
Product specification  
2004 Apr 13  
Supersedes data of 2002 Nov 15  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
FEATURES  
DESCRIPTION  
Very low ON resistance:  
The 74LVC1G66 is a high-speed Si-gate CMOS device.  
– 7.5 (typical) at VCC = 2.7 V  
– 6.5 (typical) at VCC = 3.3 V  
– 6 (typical) at VCC = 5 V.  
Switch handling capability of 32 mA  
High noise immunity  
The 74LVC1G66 provides an analog switch. The switch  
has two input/output pins (Y and Z) and an active HIGH  
enable input pin (E). When pin E is LOW, the analog  
switch is turned off.  
CMOS low power consumption  
Latch-up performance exceeds 100 mA per  
JESD78 Class II  
Direct interface TTL-levels  
Multiple package options  
ESD protection:  
– HBM EIA/JESD22-A114-B exceeds 2000 V  
– MM EIA/JESD22-A115-A exceeds 200 V.  
Specified from 40 to +85 °C and 40 to +125 °C.  
QUICK REFERENCE DATA  
Ground = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.  
SYMBOL  
tPZH/tPZL  
PARAMETER  
CONDITIONS  
TYPICAL  
UNIT  
turn-ON time E to VOS  
CL = 50 pF; RL = 500 ; VCC = 3 V  
CL = 50 pF; RL = 500 ; VCC = 5 V  
CL = 50 pF; RL = 500 ; VCC = 3 V  
CL = 50 pF; RL = 500 ; VCC = 5 V  
2.5  
1.9  
3.4  
2.5  
2
ns  
ns  
ns  
ns  
tPHZ/tPLZ  
turn-OFF time E to VOS  
CI  
input capacitance  
pF  
pF  
CPD  
power dissipation capacitance  
CL = 50 pF; fi = 10 MHz; VCC = 3.3 V;  
notes 1 and 2  
12.0  
CS  
switch capacitance  
OFF-state  
ON-state  
6.5  
11  
pF  
pF  
Notes  
1. CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi + {(CL + CS) × VCC2 × fo} where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
CS = switch capacitance in pF;  
VCC = supply voltage in Volts;  
2. The condition is VI = GND to VCC  
.
2004 Apr 13  
2
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
FUNCTION TABLE  
See note 1.  
INPUT E  
SWITCH  
L
OFF  
ON  
H
Note  
1. H = HIGH voltage level;  
L = LOW voltage level.  
ORDERING INFORMATION  
TYPE NUMBER  
PACKAGE  
TEMPERATURE  
PINS  
PACKAGE  
MATERIAL  
CODE  
MARKING  
RANGE  
74LVC1G66GW  
74LVC1G66GV  
40 to +125 °C  
40 to +125 °C  
5
5
SC-88A  
SC-74A  
plastic  
plastic  
SOT353  
SOT753  
VL  
V66  
PINNING  
PIN  
1
SYMBOL  
DESCRIPTION  
Y
Z
independent input/output  
independent output/input  
ground (0 V)  
2
3
GND  
E
4
enable input (active HIGH)  
supply voltage  
5
VCC  
handbook, halfpage  
handbook, halfpage  
Y
Z
1
2
3
5
4
V
E
CC  
Y
E
Z
66  
GND  
MNA074  
MNA657  
Fig.1 Pin configuration.  
Fig.2 Logic symbol.  
2004 Apr 13  
3
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
handbook, halfpage  
Z
1
4
handbook, halfpage  
1
2
1
#
Y
E
X1  
MNA076  
V
MNA658  
CC  
Fig.3 IEC logic symbol.  
Fig.4 Logic diagram.  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
1.65  
MAX.  
5.5  
UNIT  
V
VI  
input voltage  
0
5.5  
VCC  
5.5  
+125  
20  
V
VO  
output voltage  
active mode  
0
V
VCC = 0 V; Power-down mode  
0
V
Tamb  
tr, tf  
operating ambient temperature  
input rise and fall times  
40  
0
°C  
VCC = 1.65 to 2.7 V  
VCC = 2.7 to 5.5 V  
ns/V  
ns/V  
0
10  
2004 Apr 13  
4
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).  
SYMBOL  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
0.5  
MAX.  
+6.5  
UNIT  
VCC  
IIK  
V
input diode current  
input voltage  
VI < 0  
note 1  
50  
mA  
V
VI  
0.5  
0.5  
0.5  
+6.5  
VO  
output voltage  
active mode; notes 1 and 2  
Power-down mode; notes 1 and 2  
VO = 0 to VCC  
VCC + 0.5  
+6.5  
V
V
IOS  
maximum switch current  
VCC or GND current  
storage temperature  
power dissipation  
±50  
mA  
mA  
°C  
mW  
ICC, IGND  
Tstg  
±100  
+150  
250  
65  
Ptot  
Tamb = 40 to +125 °C; note 2  
Notes  
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.  
DC CHARACTERISTICS  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
TEST CONDITIONS  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
OTHER  
VCC (V)  
Tamb = 40 to +85 °C; note 1  
VIH HIGH-level input voltage  
1.65 to 1.95 0.65 × VCC  
V
V
V
V
V
V
V
V
µA  
2.3 to 2.7  
2.7 to 3.6  
4.5 to 5.5  
1.65 to 1.95  
2.3 to 2.7  
2.7 to 3.6  
4.5 to 5.5  
1.7  
2.0  
0.7 × VCC  
VIL  
LOW-level input voltage  
0.35 × VCC  
0.7  
0.8  
0.3 × VCC  
±5  
ILI  
IS  
input leakage current  
(control pin)  
VI = 5.5 V or GND 5.5  
±0.1  
analog switch OFF-state  
current  
VI = VIH or VIL;  
|VS| = VCC GND;  
see Fig.5  
5.5  
5.5  
±0.1  
±0.1  
0.1  
±5  
±5  
10  
µA  
µA  
µA  
analog switch ON-state  
current  
VI = VIH or VIL;  
|VS| = VCC GND;  
see Fig.6  
ICC  
quiescent supply current  
VI = VCC or GND; 5.5  
VS = GND or VCC  
;
IO = 0  
2004 Apr 13  
5
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
TEST CONDITIONS  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
500  
UNIT  
OTHER  
VCC (V)  
ICC  
additional quiescent supply VI = VCC 0.6 V;  
5.5  
5
µA  
current per control pin  
VS = GND or VCC  
;
IO = 0  
RON(peak)  
ON-resistance (peak)  
VS = GND to VCC;  
VI = VIH; see Fig.7  
IS = 4 mA  
1.65 to 1.95  
2.3 to 2.7  
2.7  
35  
100  
30  
25  
20  
15  
IS = 8 mA  
14  
IS = 12 mA  
IS = 24 mA  
IS = 32 mA  
11.5  
8.5  
6.5  
3.0 to 3.6  
4.5 to 5.5  
RON(rail)  
ON-resistance (rail)  
VS = GND;  
VI = VIH; see Fig.7  
IS = 4 mA  
IS = 8 mA  
IS = 12 mA  
IS = 24 mA  
IS = 32 mA  
1.65 to 1.95  
2.3 to 2.7  
2.7  
10  
8.5  
7.5  
6.5  
6
30  
20  
18  
15  
10  
3.0 to 3.6  
4.5 to 5.5  
VS = VCC;VI = VIH;  
see Fig.7  
IS = 4 mA  
IS = 8 mA  
IS = 12 mA  
IS = 24 mA  
IS = 32 mA  
1.65 to 1.95  
2.3 to 2.7  
2.7  
12  
8.5  
7.5  
6.5  
6
30  
20  
18  
15  
10  
3.0 to 3.6  
4.5 to 5.5  
RON(flatness) ON-resistance (flatness)  
VS = GND to VCC  
;
VI = VIH;  
see Figs 9 to 13  
IS = 4 mA  
IS = 8 mA  
IS = 12 mA  
IS = 24 mA  
IS = 32 mA  
1.65 to 1.95  
2.3 to 2.7  
2.7  
100(2)  
17(2)  
10(2)  
5(2)  
3.0 to 3.6  
4.5 to 5.5  
3(2)  
2004 Apr 13  
6
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
TEST CONDITIONS  
OTHER VCC (V)  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
Tamb = 40 to +125 °C  
VIH  
HIGH-level input voltage  
1.65 to 1.95 0.65 × VCC  
V
V
V
V
V
V
V
V
µA  
2.3 to 2.7  
2.7 to 3.6  
4.5 to 5.5  
1.65 to 1.95  
2.3 to 2.7  
2.7 to 3.6  
4.5 to 5.5  
1.7  
2.0  
0.7 × VCC  
VIL  
LOW-level input voltage  
0.35 × VCC  
0.7  
0.8  
0.3 × VCC  
100  
ILI  
IS  
input leakage current  
(control pin)  
VI = 5.5 V or GND 5.5  
analog switch OFF-state  
current  
VI = VIH or VIL;  
|VS| = VCC GND;  
see Fig.5  
5.5  
5.5  
200  
200  
200  
5000  
µA  
µA  
µA  
µA  
analog switch ON-state  
current  
VI = VIH or VIL;  
|VS| = VCC GND;  
see Fig.6  
ICC  
quiescent supply current  
VI = VCC or GND; 5.5  
VS = GND or VCC  
;
IO = 0  
ICC  
additional quiescent supply VI = VCC 0.6 V;  
5.5  
current per control pin  
VS = GND or VCC  
IO = 0  
;
RON(peak)  
ON-resistance (peak)  
VS = GND to VCC;  
VI = VIH; see Fig.7  
IS = 4 mA  
1.65 to 1.95  
2.3 to 2.7  
2.7  
150  
45  
38  
30  
23  
IS = 8 mA  
IS = 12 mA  
IS = 24 mA  
IS = 32 mA  
3.0 to 3.6  
4.5 to 5.5  
2004 Apr 13  
7
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
TEST CONDITIONS  
OTHER VCC (V)  
VS = GND;  
SYMBOL  
PARAMETER  
ON-resistance (rail)  
MIN.  
TYP.  
MAX.  
UNIT  
RON(rail)  
VI = VIH; see Fig.7  
IS = 4 mA  
1.65 to 1.95  
2.3 to 2.7  
2.7  
45  
30  
27  
23  
15  
IS = 8 mA  
IS = 12 mA  
IS = 24 mA  
IS = 32 mA  
3.0 to 3.6  
4.5 to 5.5  
VS = VCC;VI = VIH;  
see Fig.7  
IS = 4 mA  
IS = 8 mA  
IS = 12 mA  
IS = 24 mA  
IS = 32 mA  
1.65 to 1.95  
2.3 to 2.7  
2.7  
45  
30  
27  
23  
15  
3.0 to 3.6  
4.5 to 5.5  
Notes  
1. All typical values are measured at Tamb = 25 °C.  
2. RON flatness over operating temperature range (Tamb = 40 to +85 °C).  
E
E
V
V
IL  
IH  
Y
Z
Y
Z
A
A
A
A
V = V  
or GND  
CC  
V = V  
or GND  
V
= GND or V  
V
(open circuit)  
GND  
I
I
CC  
O
CC  
O
GND  
MNA660  
MNA661  
Fig.5 Test circuit for measuring OFF-state current.  
Fig.6 Test circuit for measuring ON-state current.  
2004 Apr 13  
8
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
001aaa707  
40  
R
ON  
()  
(1)  
30  
20  
10  
0
E
V
IH  
V
(2)  
(3)  
Y
Z
(4)  
(5)  
V
= GND to V  
I
S
S
CC  
0
1
2
3
4
5
GND  
V (V)  
I
MNA659  
GND  
(1) VCC = 1.8 V.  
(2) VCC = 2.5 V.  
(3) VCC = 2.7 V.  
(4) VCC = 3.3 V.  
(5) VCC = 5.0 V.  
Measured at Tamb = 25 °C.  
Fig.7 Test circuit for measuring ON-resistance  
(RON).  
Fig.8 Typical ON-resistance (RON) as a function  
of input voltage (VS) for VS = GND to VCC  
.
001aaa712  
001aaa708  
80  
16  
R
()  
ON  
R
ON  
()  
60  
12  
(1)  
(2)  
40  
20  
0
8
4
0
(3)  
(4)  
(1)  
(2)  
(3)  
(4)  
0
1
2
3
4
5
0
1
2
3
4
5
V (V)  
I
V (V)  
I
(1) Tamb = +125 °C.  
(2) Tamb = +85 °C.  
(3) Tamb = +25 °C.  
(4) Tamb = 40 °C.  
(1) Tamb = +125 °C.  
(2) Tamb = +85 °C.  
(3) Tamb = +25 °C.  
(4) Tamb = 40 °C.  
Fig.9 RON for VCC = 1.8 V.  
Fig.10 RON for VCC = 2.5 V.  
2004 Apr 13  
9
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
001aaa709  
001aaa710  
16  
16  
R
ON  
R
ON  
()  
()  
12  
12  
(1)  
(2)  
(1)  
8
4
0
8
4
0
(2)  
(3)  
(4)  
(3)  
(4)  
0
1
2
3
4
5
0
1
2
3
4
5
V (V)  
I
V (V)  
I
(1) Tamb = +125 °C.  
(2) Tamb = +85 °C.  
(3) Tamb = +25 °C.  
(4) Tamb = 40 °C.  
(1) Tamb = +125 °C.  
(2) Tamb = +85 °C.  
(3) Tamb = +25 °C.  
(4) Tamb = 40 °C.  
Fig.11 RON for VCC = 2.7 V.  
Fig.12 RON for VCC = 3.3 V.  
001aaa711  
16  
R
ON  
()  
12  
8
4
0
(1)  
(2)  
(3)  
(4)  
0
1
2
3
4
5
V (V)  
I
(1) Tamb = +125 °C.  
(2) Tamb = +85 °C.  
(3) Tamb = +25 °C.  
(4) Tamb = 40 °C.  
Fig.13 RON for VCC = 5.0 V.  
2004 Apr 13  
10  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
AC CHARACTERISTICS  
TEST CONDITIONS  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
WAVEFORMS  
VCC (V)  
Tamb = 40 to +85 °C; note 1  
tPHL/tPLH  
propagation delay Y to Z see Figs 14 and 16  
or Z to Y  
1.65 to 1.95  
2.3 to 2.7  
2.7  
1
1
1
1
1
1
1
1
1
1
0.8  
2
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
0.4  
0.4  
0.3  
0.2  
5.3  
3.0  
2.6  
2.5  
1.9  
4.2  
2.4  
3.6  
3.4  
2.5  
1.2  
1
3.0 to 3.6  
4.5 to 5.5  
1.65 to 1.95  
2.3 to 2.7  
2.7  
0.8  
0.6  
12  
6.5  
6
tPZH/tPZL  
turn-ON time E to VOS  
see Figs 15 and 16  
see Figs 15 and 16  
3.0 to 3.6  
4.5 to 5.5  
1.65 to 1.95  
2.3 to 2.7  
2.7  
5
4.2  
10  
6.9  
7.5  
6.5  
5
tPHZ/tPLZ  
turn-OFF time E to VOS  
3.0 to 3.6  
4.5 to 5.5  
Tamb = 40 to +125 °C  
tPHL/tPLH  
tPZH/tPZL  
tPHZ/tPLZ  
propagation delay Y to Z see Figs 14 and 16  
or Z to Y  
1.65 to 1.95  
2.3 to 2.7  
2.7  
1
1
1
1
1
1
1
1
1
1
3
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
2
1.5  
1.5  
1
3.0 to 3.6  
4.5 to 5.5  
1.65 to 1.95  
2.3 to 2.7  
2.7  
turn-ON time E to VOS  
see Figs 15 and 16  
see Figs 15 and 16  
15.5  
8.5  
8
3.0 to 3.6  
4.5 to 5.5  
1.65 to 1.95  
2.3 to 2.7  
2.7  
6.5  
5.5  
13  
9
turn-OFF time E to VOS  
9.5  
8.5  
6.5  
3.0 to 3.6  
4.5 to 5.5  
Note  
1. All typical values are measured at Tamb = 25 °C.  
2004 Apr 13  
11  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
AC WAVEFORMS  
V
handbook, halfpage  
Y or Z  
I
V
M
GND  
t
t
PHL  
PLH  
V
OH  
V
Z or Y  
M
V
OL  
MNA667  
INPUT  
tr = tf  
VCC  
VM  
VI  
1.65 to 1.95 V 0.5 × VCC VCC  
2.0 ns  
2.0 ns  
2.5 ns  
2.5 ns  
2.5 ns  
2.3 to 2.7 V  
2.7 V  
0.5 × VCC VCC  
1.5 V  
1.5 V  
2.7 V  
2.7 V  
3.0 to 3.6 V  
4.5 to 5.5 V  
0.5 × VCC VCC  
VOL and VOH are typical output voltage drop that occur with the output load.  
Fig.14 The input (VS) to output (VO) propagation delays.  
2004 Apr 13  
12  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
V
I
E
V
M
t
GND  
t
PLZ  
PZL  
V
CC  
output  
Y or Z  
LOW-to-OFF  
OFF-to-LOW  
V
M
V
X
V
OL  
t
t
PZH  
PHZ  
V
OH  
V
output  
Y
Y or Z  
HIGH-to-OFF  
OFF-to-HIGH  
V
M
GND  
switch  
enabled  
switch  
enabled  
switch  
disabled  
MNA668  
INPUT  
tr = tf  
VCC  
VM  
VI  
1.65 to 1.95 V  
2.3 to 2.7 V  
2.7 V  
0.5 × VCC VCC  
0.5 × VCC VCC  
2.0 ns  
2.0 ns  
2.5 ns  
2.5 ns  
2.5 ns  
VX = VOL + 0.3 V at VCC 2.7 V;  
X = VOL + 0.1 x VCC at VCC < 2.7 V;  
V
1.5 V  
1.5 V  
2.7 V  
2.7 V  
VY = VOH 0.3 V at VCC 2.7 V;  
VY = VOH 0.1 x VCC at VCC < 2.7 V.  
3.0 to 3.6 V  
4.5 to 5.5 V  
0.5 × VCC VCC  
VOL and VOH are typical output voltage drop that occur with the output load.  
Fig.15 The turn-on and turn-off times.  
2004 Apr 13  
13  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
V
EXT  
V
CC  
R
L
V
V
O
I
PULSE  
GENERATOR  
D.U.T.  
C
R
R
L
L
T
MNA616  
VEXT  
VCC  
VI  
CL  
RL  
tPLH/tPHL  
tPZH/tPHZ  
GND  
tPZL/tPLZ  
1.65 to 1.95 V  
2.3 to 2.7 V  
2.7 V  
VCC  
VCC  
30 pF  
30 pF  
50 pF  
50 pF  
50 pF  
1 kΩ  
open  
open  
open  
open  
open  
2 × VCC  
2 × VCC  
6 V  
500 Ω  
500 Ω  
500 Ω  
500 Ω  
GND  
2.7 V  
2.7 V  
VCC  
GND  
3.0 to 3.6 V  
4.5 to 5.5 V  
GND  
6 V  
GND  
2 × VCC  
Definitions for test circuit:  
RL = Load resistor.  
CL = Load capacitance including jig and probe capacitance.  
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.  
Fig.16 Load circuitry for switching times.  
2004 Apr 13  
14  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
ADDITIONAL AC CHARACTERISTICS  
At recommended conditions and all typical values are measured at Tamb = 25 °C.  
SYMBOL  
dsin  
PARAMETER  
TEST CONDITIONS  
V
CC (V)  
TYP.  
0.032  
UNIT  
sine-wave distortion  
RL = 10 k; CL = 50 pF;  
fi = 1 kHz; see Fig.18  
1.65  
2.3  
3
%
%
%
%
%
%
%
%
0.008  
0.006  
0.001  
0.068  
0.009  
0.008  
0.006  
135  
4.5  
1.65  
2.3  
3
RL = 10 k; CL = 50 pF;  
fi = 10 kHz; see Fig.18  
4.5  
1.65  
2.3  
3
fON(res)  
switch ON signal frequency  
response  
RL = 600 ; CL = 50 pF;  
fi = 1 MHz; see Fig.17; note 1  
MHz  
MHz  
MHz  
MHz  
MHz  
MHz  
MHz  
MHz  
dB  
145  
150  
4.5  
1.65  
2.3  
3
155  
RL = 50 ; CL = 5 pF;  
fi = 1 MHz; see Fig.17; note 1  
>500  
>500  
>500  
>500  
46  
4.5  
1.65  
2.3  
3
αOFF(ft)  
switch OFF signal  
feed-through attenuation  
RL = 600 ; CL = 50 pF;  
fi = 1 MHz; see Fig.19; note 2  
46  
dB  
46  
dB  
4.5  
1.65  
2.3  
3
46  
dB  
RL = 0 ; CL = 50 pF;  
fi = 1 MHz; see Fig.19; note 2  
37  
dB  
37  
dB  
37  
dB  
4.5  
1.65  
2.3  
3
37  
dB  
Vct  
crosstalk (control input to  
signal output)  
RL = 600 ; CL = 50 pF;  
fi = 1 MHz; tr = tf = 2 ns;  
see Fig.20  
69  
mV  
mV  
mV  
mV  
MHz  
MHz  
MHz  
MHz  
pF  
87  
156  
4.5  
1.65  
2.3  
3
302  
fmax  
frequency response (3 dB)  
RL = 50 ; CL = 10 pF;  
see Fig.17; note 1  
200  
350  
410  
4.5  
2.5  
3.3  
5.0  
440  
CPD  
power dissipation capacitance CL = 50 pF; fi = 10 MHz  
9.8  
12.0  
17.3  
pF  
pF  
Q
charge injection  
CL = 0.1 nF; Vgen = 0 V;  
Rgen = 0 ; fi = 1 MHz;  
1.65 to 5.5 0.05  
pC  
RL = 1 M; see Fig.21; note 3  
2004 Apr 13  
15  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
Notes  
1. Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads 3 dB.  
2. Adjust fi voltage to obtain 0 dBm level at input.  
3. Guaranteed by design.  
E
V
IH  
0.1 µF  
Y/Z  
Z/Y  
V
O
f
R
50 Ω  
C
dB  
in  
L
L
channel  
ON  
1/2V  
CC  
MNA669  
Fig.17 Test circuit for measuring the frequency response when switch is ON.  
2004 Apr 13  
16  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
E
V
IH  
10 µF  
Y/Z  
Z/Y  
V
O
DISTORTION  
METER  
f
600 Ω  
R
C
L
in  
L
channel  
ON  
1/2V  
CC  
MNA670  
VCC  
VI  
1.65 V  
2.3 V  
3 V  
1.4 V (p-p)  
2 V (p-p)  
2.5 V (p-p)  
4 V (p-p)  
4 V  
Fig.18 Test circuit for measuring sine-wave distortion.  
E
V
IL  
0.1 µF  
Y/Z  
Z/Y  
V
O
f
R
R
L
50 Ω  
1/2V  
C
dB  
in  
L
L
channel  
ON  
1/2V  
CC  
CC  
MNA671  
Fig.19 Test circuit for measuring feed-through when switch is OFF.  
17  
2004 Apr 13  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
E
Y/Z  
in  
Z/Y  
V
O
R
R
600 Ω  
C
L
L
50 Ω  
600 Ω  
50 pF  
1/2V  
1/2V  
CC  
CC  
MNA672  
Fig.20 Crosstalk.  
E
R
gen  
Y/Z  
Z/Y  
V
O
logic  
input  
1
MΩ  
0.1  
nF  
V
R
C
L
gen  
L
MNA674  
logic  
input (E)  
off  
on  
off  
V
V  
out  
O
MNA675  
Q = (Vout) × (CL)  
Fig.21 Charge injection test.  
18  
2004 Apr 13  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
PACKAGE OUTLINES  
Plastic surface mounted package; 5 leads  
SOT353  
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
(2)  
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SC-88A  
97-02-28  
SOT353  
2004 Apr 13  
19  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
Plastic surface mounted package; 5 leads  
SOT753  
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
c
L
p
1
2
3
detail X  
e
b
p
w
M B  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
A
1
b
c
D
E
e
H
L
Q
v
w
y
p
p
E
0.100  
0.013  
0.40  
0.25  
1.1  
0.9  
0.26  
0.10  
3.1  
2.7  
1.7  
1.3  
3.0  
2.5  
0.6  
0.2  
0.33  
0.23  
mm  
0.95  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
SOT753  
SC-74A  
02-04-16  
2004 Apr 13  
20  
Philips Semiconductors  
Product specification  
Bilateral switch  
74LVC1G66  
DATA SHEET STATUS  
DATA SHEET  
LEVEL  
PRODUCT  
STATUS(2)(3)  
DEFINITION  
STATUS(1)  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Apr 13  
21  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R20/04/pp22  
Date of release: 2004 Apr 13  
Document order number: 9397 750 13018  

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