74LVU04PWDH-T [NXP]
IC LV/LV-A/LVX/H SERIES, HEX 1-INPUT INVERT GATE, PDSO14, PLASTIC, SOT-402-1, TSSOP1-14, Gate;
| 型号： | 74LVU04PWDH-T |
| 厂家： | 
NXP |
| 描述： | IC LV/LV-A/LVX/H SERIES, HEX 1-INPUT INVERT GATE, PDSO14, PLASTIC, SOT-402-1, TSSOP1-14, Gate 栅 输入元件 光电二极管 逻辑集成电路 |
| 文件： | 总14页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
74LVU04
Hex inverter
Product specification
2001 Jan 11
Supersedes data of 2000 Dec 18
Philips
Semiconductors
Philips Semiconductors
Product specification
Hex inverter
74LVU04
FEATURES
• Wide operating voltage: 1.0 to 5.5 V
• Optimized for Low Voltage applications: 1.0 to 3.6 V
DESCRIPTION
The 74LVU04 is a low-voltage, Si-gate CMOS device and is pin
compatible with the 74HCU04.
The 74LVU04 is a general purpose hex inverter. Each of the six
inverters is a single stage with unbuffered outputs.
• Typical V
(output ground bounce) < 0.8 V at V = 3.3 V,
OLP
= 25 °C.
CC
T
amb
• Typical V
(output V undershoot) > 2 V at V = 3.3 V,
OHV
= 25 °C.
OH
CC
T
amb
• Output capability: standard
• I category: SSI
CC
QUICK REFERENCE DATA
GND = 0 V; T
= 25 °C; t = t ≤ 2.5 ns
amb
r f
SYMBOL
/t
PARAMETER
CONDITIONS
TYPICAL
UNIT
Propagation delay
nA to nY
C = 15 pF;
L
CC
t
6
ns
PHL PLH
V
= 3.3 V
C
Input capacitance
3.5
18
pF
pF
I
C
Power dissipation capacitance per gate
Notes 1, 2
PD
NOTES:
1. C is used to determine the dynamic power dissipation (P in µW)
PD
D
2
2
P
= C × V
× f + Σ (C × V
× f ) where:
D
PD
CC
i
L
CC o
f = input frequency in MHz; C = output load capacitance in pF;
i
L
f = output frequency in MHz; V = supply voltage in V;
o
CC
2
Σ (C × V
× f ) = sum of the outputs.
L
CC
o
2. The condition is V = GND to V
I
CC.
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE OUTSIDE NORTH AMERICA
NORTH AMERICA
74LVU04N
PKG. DWG. #
SOT27-1
14-Pin Plastic DIL
–40 to +125 °C
–40 to +125 °C
–40 to +125 °C
–40 to +125 °C
74LVU04N
74LVU04D
74LVU04DB
74LVU04PW
14-Pin Plastic SO
74LVU04D
SOT108-1
SOT337-1
SOT402-1
14-Pin Plastic SSOP Type II
14-Pin Plastic TSSOP Type I
74LVU04DB
74LVU04PWDH
PIN DESCRIPTION
FUNCTION TABLE
PIN NUMBER
SYMBOL
1A – 6A
1Y – 6Y
GND
NAME AND FUNCTION
INPUTS
OUTPUTS
1, 3, 5, 9, 11, 13
Data inputs
nA
nY
H
2, 4, 6, 8, 10, 12
Data outputs
L
7
Ground (0 V)
H
L
14
V
CC
Positive supply voltage
NOTES:
H = HIGH voltage level
L = LOW voltage level
2
2001 Jan 11
853–1918 25393
Philips Semiconductors
Product specification
Hex inverter
74LVU04
PIN CONFIGURATION
LOGIC SYMBOL
1A
1Y
1
14
13
V
2
4
6
8
1
3
1A
2A
3A
4A
5A
6A
1Y
2Y
3Y
4Y
5Y
6Y
CC
2
6A
3
4
5
6
7
2A
12
11
10
9
6Y
5A
5Y
4A
2Y
5
3A
3Y
9
GND
8
4Y
10
12
11
13
SV00396
LOGIC SYMBOL (IEEE/IEC)
1
2
SV00397
1
3
4
1
SCHEMATIC DIAGRAM (ONE INVERTER)
5
6
1
V
V
V
CC
CC
CC
9
8
1
11
10
12
W
W
170
100
1
nA
nY
13
1
SV00398
SV00400
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
MIN
1.0
0
TYP.
MAX
UNIT
V
CC
DC supply voltage
See Note 1
3.3
–
5.5
V
V
V
V
I
Input voltage
V
CC
V
CC
V
O
Output voltage
0
–
–40
–40
–
+85
+125
500
200
100
50
See DC and AC
characteristics
T
Operating ambient temperature range in free air
Input rise and fall times
°C
amb
V
CC
V
CC
V
CC
V
CC
= 1.0 to 2.0 V
= 2.0 to 2.7 V
= 2.7 to 3.6 V
= 3.6 to 5.5 V
–
–
–
–
–
t , t
r
ns/V
f
–
–
NOTE:
1. The LV is guaranteed to function down to V = 1.0 V (input levels GND or V );
CC
CC
DC characteristics are guaranteed from V = 1.2 V to V = 5.5 V.
CC
CC
3
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
1, 2
ABSOLUTE MAXIMUM RATINGS
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
DC supply voltage
CONDITIONS
RATING
UNIT
V
V
CC
–0.5 to +7.0
±I
DC input diode current
DC output diode current
V < –0.5 or V > V + 0.5 V
20
50
mA
mA
IK
I
I
CC
±I
OK
V
O
< –0.5 or V > V + 0.5 V
O
CC
DC output source or sink current
– standard outputs
±I
O
–0.5 V < V < V + 0.5 V
mA
O
CC
25
DC V or GND current for types with
– standard outputs
CC
±I
±I
,
mA
GND
50
CC
T
stg
Storage temperature range
–65 to +150
°C
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
for temperature range: –40 to +125 °C
above +70 °C derate linearly with 12 mW/K
above +70 °C derate linearly with 8 mW/K
above +60 °C derate linearly with 5.5 mW/K
750
500
400
P
TOT
mW
– plastic shrink mini-pack (SSOP and TSSOP)
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
LIMITS
–40 to +85 °C
–40 to +125 °C
SYMBOL
PARAMETER
TEST CONDITIONS
= 1.2 V
UNIT
1
MIN
1.0
1.6
2.4
TYP
MAX
MIN
1.0
1.6
2.4
MAX
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
= 2.0 V
HIGH level Input
voltage
V
IH
V
= 2.7 to 3.6 V
= 4.5 to 5.5 V
= 1.2 V
0.8*V
0.8*V
CC
CC
0.2
0.4
0.5
0.2
0.4
0.5
= 2.0 V
LOW level Input
voltage
V
IL
V
= 2.7 to 3.6 V
= 4.5 to 5.5 V
0.2*V
0.2*V
CC
CC
= 1.2 V; V = V or V ; –I = 100 µA
1.2
2.0
2.7
3.0
4.5
2.82
4.20
0
I
IH
IL
O
= 2.0 V; V = V or V ; –I = 100 µA
1.8
2.5
1.8
2.5
I
IH
IL
O
HIGH level output
voltage
V
V
= 2.7 V; V = V or V ; –I = 100 µA
V
V
V
V
OH
I
IH
IL
O
= 3.0 V; V = V or V ; –I = 100 µA
2.8
2.8
I
IH
IL
O
= 4.5 V; V = V or V ; –I = 100 µA
4.3
4.3
I
IH
IL
O
= 3.0 V; V = V or V ; –I = 6 mA
2.40
3.60
2.20
3.50
I
IH
IL
O
HIGH level output
voltage
OH
= 4.5 V; V = V or V ; –I = 12 mA
I
IH
IL
O
= 1.2 V; V = V or V ; I = 100 µA
I
IH
IL O
= 2.0 V; V = V or V ; I = 100 µA
0
0.2
0.2
0.2
0.2
I
IH
IL O
LOW level output
V
V
= 2.7 V; V = V or V ; I = 100 µA
0
OL
I
IH
IL O
= 3.0 V; V = V or V ; I = 100 µA
0
0.2
0.2
I
IH
IL O
= 4.5 V; V = V or V ; I = 100 µA
0
0.2
0.2
I
IH
IL O
= 3.0 V; V = V or V I = 6 mA
IL; O
0.25
0.35
0.40
0.55
0.50
0.65
I
IH
LOW level output
voltage
OL
= 4.5 V; V = V or V I = 12 mA
IL; O
I
IH
Input leakage
current
±I
V
= 5.5 V; V = V or GND
1.0
1.0
µA
µA
I
CC
I
CC
Quiescent supply
current
I
V
CC
= 5.5 V; V = V or GND; I = 0
20.0
40.0
CC
I
CC
O
NOTE:
1. All typical values are measured at T
= 25 °C.
amb
4
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
AC CHARACTERISTICS
GND = 0 V; t = t = 2.5 ns; C = 50 pF; R = 500 Ω
r
f
L
L
LIMITS
–40 to +85 °C
CONDITION
(V)
–40 to +125 °C
SYMBOL
PARAMETER
WAVEFORM
UNIT
1
V
CC
MIN
TYP
35
12
9
MAX
MIN
MAX
1.2
2.0
2.7
14
10
8
17
13
10
9
Propagation delay
nA to nY
t
Figure 1
ns
PHL/PLH
2
3.0 to 3.6
4.5 to 5.5
7
7
NOTES:
1. Unless otherwise stated, all typical values are measured at T
= 25 °C
amb
2. Typical values are measured at V = 3.3 V.
CC
AC WAVEFORMS
TYPICAL TRANSFER CHARACTERISTICS
V
V
V
= 1.5 V at V ≥ 2.7 V and ≤ 3.6 V
M
CC
= 0.5 × V at V < 2.7 V and ≥ 4.5 V
and V are the typical output voltage drop that occur with the
M
CC
CC
OL
OH
300
1.2
0.8
0.4
0
V
(V)
output load.
o
I
D
(mA)
V
I
200
100
0
nA INPUT
GND
V
M
t
t
PLH
PHL
V
OH
nY OUTPUT
V
M
V
OL
SV00395
0
0.4
0.8
1.2
V
i
(V)
Figure 1. Input (nA) to output (nY) propagation delays
and output transition times.
V
I
D
O
V
= 1.2 V; I = 0 V.
O
CC
SV00401
Figure 2.
5
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
TYPICAL TRANSFER CHARACTERISTICS (Continued)
5
4
3
2
1
0
2.0
1.6
1.2
0.8
0.4
R
= 560 kW
bias
V
CC
I
V
(V)
o
D
(mA)
0.47 mF
100 mF
input
output
A
i
o ~
Vi ~
(f = 1 kHz)
GND
SV00323
0
Figure 5. Test set-up for measuring forward transconductance
0
0.4
0.8
1.2
1.6
2.0
g
fs
= di /dv at v is constant (see also graph Figure 6).
O
i
O
V (V)
i
V
I
O
D
40
V
= 2.0 V; I = 0 V.
CC
O
SV00402
Figure 3.
30
fs
g
(mA/V)
3.0
18
12
6
V
o
I
D
(mA)
20
(V)
2.0
1.0
10
0
0
1
2
3
4
V
(V)
CC
SV00405
0
0
Figure 6. Typical forward transconductance
as a function of the supply voltage V at T = 25 °C.
0
1.0
V
2.0
I
3.0
V (V)
i
g
fs
CC
amb
V
O
D
= 3.0 V; I = 0 V.
O
CC
SV00403
Figure 4.
6
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
APPLICATION INFORMATION
Some applications for the 74LVU04 are:
• Linear amplifier (see Figure 7)
• In crystal oscillator designs (see Figure 8)
• Astable multivibrator (see Figure 9)
R
2
R
1
V
CC
R
1 mF
R
1
2
U04
U04
C
2
C
1
Z
L
out
GND
Note:
C
C
R
R
= 47 pF (typ.)
= 22 pF (typ.)
1
2
1
2
= 1 to 10 MW (typ.)
optimum value depends on the frequency and required stability against
Note:
changes in V or average minimum I (I is typically
CC
CC CC
Z
> 10kΩ; A = 20 (typical)
L
OL
2 mA at V = 3 V and f = 1 MHz).
CC
A
OL
SV00408
A
+ –
;V
u
OMax(P*P)
– 1.5 V centered
R
R
1
2
1 )
(1 ) A
)
V
CC
≈
OL
Figure 8. Crystal oscillator configuration.
1
at
/ V
2 CC
3 kΩ < R1, R2 < 1 MΩ
Typical unity gain bandwidth product is 5 MHz.
C , see Figure10
OPTIMUM VALUE FOR R
2
l
R
FREQUENCY
(MHz)
2
Optimum
A
A
= open loop amplification
OL
(kW)
= voltage amplification
u
SV00404
2.0
8.0
Minimum required I
Minimum influence due to change in V
CC
3
6
CC
Figure 7. LVU04 used as a linear amplifier.
1.0
4.7
Minimum I
CC
Minimum influence by V
CC
CC
CC
EXTERNAL COMPONENTS FOR RESONATOR
(f < 1 MHz)
0.5
2.0
Minimum I
CC
10
Minimum influence by V
FREQUENCY
R (MW)
1
R (kW)
2
C (pF)
1
C (pF)
2
0.5
1.0
Minimum I
CC
Minimum influence by V
(kHz)
14
10 .. 15.9
16 .. 24.9
25 .. 54.9
55 .. 129.9
130 .. 199.9
200 .. 349.9
2.2
2.2
2.2
2.2
2.2
2.2
2.2
220
220
100
100
47
56
56
56
47
47
47
47
20
10
10
5
> 14
Replace R by C with a typical value of 35 pF
2 3
5
47
5
350 .. 600
47
5
WHERE:
All values given are typical and must be used as an initial set-up.
7
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
80
70
60
50
40
30
20
10
U04
U04
input
capacitance
(pF)
1
R
R
C
S
2
Note:
3
1
T
1
f +
[
2.2 RC
R
S
[ 2 x R
The average I (mA) is approximately
CC
3.5 + 0.05 x f (MHz) x C (pF) at V = 3.0 V.
CC
0
SV00406
0
1
2
3
input voltage (V)
Figure 9. LVU04 used as an astable multivibrator.
Note:
1.
2.
3.
V
V
V
= 1.2 V.
= 2.0 V.
= 3.0 V.
CC
CC
CC
SV00407
Figure 10. Typical input capacitance
as function of input voltage.
Note for Application Information
All values given are typical unless otherwise specified.
8
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1
9
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
10
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm
SOT337-1
11
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm
SOT402-1
12
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
NOTES
13
2001 Jan 11
Philips Semiconductors
Product specification
Hex inverter
74LVU04
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
Production
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Product
specification
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 2001
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 01-01
Document order number:
9397 750 07912
Philips
Semiconductors
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