933022910143 [NXP]
DIODE 0.5 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode;
| 型号： | 933022910143 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.5 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode 二极管 |
| 文件： | 总7页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAX18
General purpose diode
1996 Sep 18
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
General purpose diode
BAX18
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BAX18 is a general purpose diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 75 V
handbook, halfpage
k
a
• Repetitive peak reverse voltage:
max. 75 V
MAM246
• Repetitive peak forward current:
max. 2 A.
The diode is type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• Rectifier applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
75
75
V
V
IF
see Fig.2; note 1
500
mA
mA
IFRM
IFSM
2000
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
−
−
55
15
A
t = 100 µs
t = 10 ms
A
−
9
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
450
+200
200
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 18
2
Philips Semiconductors
Product specification
General purpose diode
BAX18
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 300 mA
−
−
1.0
1.5
V
V
IF = 2 A; Tj = 150 °C
see Fig.5
IR
reverse current
VR = 75 V
−
−
−
−
5
100
35
µA
µA
pF
ns
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
50
measured at IR = 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
240
375
K/W
K/W
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 18
3
Philips Semiconductors
Product specification
General purpose diode
BAX18
GRAPHICAL DATA
MBG455
MBG467
500
3
handbook, halfpage
handbook, halfpage
I
F
I
(mA)
F
(A)
400
(1) (2)
(3) (4)
2
300
200
100
0
1
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 150 °C; maximum values.
(4) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG702
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 18
4
Philips Semiconductors
Product specification
General purpose diode
BAX18
MBG697
4
10
I
R
(µA)
3
10
2
10
10
1
−1
10
−2
10
0
100
o
200
T ( C)
j
VR = 75 V.
Solid line; maximum values. Dotted line; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD003
40
handbook, halfpage
C
d
(pF)
30
20
10
0
0
10
20
30
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 18
5
Philips Semiconductors
Product specification
General purpose diode
BAX18
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
1996 Sep 18
6
Philips Semiconductors
Product specification
General purpose diode
BAX18
PACKAGE OUTLINE
o
0.56
max
1.85
max
4.25
max
MLA428 - 1
25.4 min
25.4 min
Dimensions in mm.
Fig.8 SOD27 (DO-35).
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
7
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