933184920235 [NXP]
DIODE UHF BAND, 16.5 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode;
| 型号： | 933184920235 |
| 厂家： | 
NXP |
| 描述： | DIODE UHF BAND, 16.5 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode 光电二极管 |
| 文件： | 总4页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
BBY31
UHF variable capacitance diode
1996 May 03
Product specification
Supersedes data of November 1993
Philips Semiconductors
Product specification
UHF variable capacitance diode
BBY31
FEATURES
• Excellent linearity
• Small plastic SMD package
• C28: 1.9 pF; ratio: 8.3.
handbookpa2ge
1
APPLICATIONS
2
n.c.
1
• Electronic tuning in UHF television
tuners
3
• VCO.
3
MAM170
DESCRIPTION
The BBY31 is a variable capacitance
diode, fabricated in planar
Marking code: S1.
technology, and encapsulated in the
SOT23 small plastic SMD package.
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
30
UNIT
VR
IF
continuous reverse voltage
continuous forward current
storage temperature
V
−
−
20
mA
°C
Tstg
Tj
+150
+125
−55
−55
operating junction temperature
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
reverse current
CONDITIONS
VR = 28 V; see Fig.3
MIN.
TYP. MAX. UNIT
IR
−
−
−
−
−
nA
nA
Ω
10
200
1.2
−
VR = 28 V; Tj = 85 °C; see Fig.3
f = 470 MHz; note 1
−
rs
diode series resistance
diode capacitance
−
Cd
VR = 1 V; f = 1 MHz; see Figs 2 and 4
16.5
−
pF
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4 1.6
f = 1 MHz
2
capacitance ratio
−
8.3
−
Cd (1V)
--------------------
Cd (28V)
Note
1. VR is the value at which Cd = 9 pF.
1996 May 03
2
Philips Semiconductors
Product specification
UHF variable capacitance diode
BBY31
GRAPHICAL DATA
MBE874
20
C
d
(pF)
16
12
8
4
0
10
−1
2
1
10
V
(V)
10
R
f = 1 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MLC816
MLC815
3
10
3
10
handbook, halfpage
handbook, halfpage
TC
d
(K )
I
R
−1
(nA)
4
2
10
10
5
10
10
0
1
2
50
100
10
1
10
10
o
V
(V)
T
( C)
R
j
Fig.4 Temperature coefficient of diode
Fig.3 Reverse current as a function of junction
temperature; maximum values.
capacitance as a function of reverse
voltage; typical values.
1996 May 03
3
Philips Semiconductors
Product specification
UHF variable capacitance diode
BBY31
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
3
1.1
max
0.48
0.38
0.1 M
A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.5 SOT23.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03
4
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