933347740215 [NXP]
TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal;
| 型号： | 933347740215 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT93
PNP 5 GHz wideband transistor
November 1992
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
DESCRIPTION
PINNING
PIN
PNP transistor in a plastic SOT23
envelope.
DESCRIPTION
Code: X1p
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
1
2
3
base
page
3
emitter
collector
1
2
Top view
MSB003
Fig.1 SOT23.
NPN complements are BFR93 and
BFR93A.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
Ic
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
CONDITIONS
TYP. MAX. UNIT
open emitter
open base
−
−
−
−
5
−15
−12
−35
300
−
V
V
mA
mW
GHz
Ptot
fT
up to Ts = 95 °C; note 1
IC = −30 mA; VCE = −5 V; f = 500 MHz;
Tj = 25 °C
Cre
feedback capacitance
IC = −2 mA; VCE = −5 V; f = 1 MHz
1
−
−
pF
dB
GUM
maximum unilateral power gain IC = −30 mA; VCE = −5 V; f = 500 MHz;
Tamb = 25 °C
16.5
F
noise figure
IC = −10 mA; VCE = −5 V; f = 500 MHz;
Tamb = 25 °C
2.4
−
−
dB
Vo
output voltage
dim = −60 dB; IC = −30 mA;
VCE = −5 V; RL = 75 Ω;
f(p+q−r) = 493.25 MHz
300
mV
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
−15
UNIT
−
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
open base
−12
−2
open collector
−35
−50
300
150
175
mA
mA
mW
°C
ICM
Ptot
Tstg
Tj
f > 1 MHz
up to Ts = 95 °C; note 1
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 70 °C; (note 1)
260 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −5 V
MIN.
TYP.
MAX. UNIT
ICBO
hFE
fT
collector cut-off current
DC current gain
−
−
−50
−
nA
IC = −30 mA; VCE = −5 V
20
50
5
transition frequency
IC = −30 mA; VCE = −5 V;
−
−
GHz
f = 500 MHz
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
Ic = ic = 0; VEB = −0.5 V; f = 1 MHz
IC = −2 mA; VCE = −5 V; f = 1 MHz
−
−
−
−
0.95
1.8
1
−
−
−
−
pF
pF
pF
dB
Ce
Cre
GUM
maximum unilateral power gain IC = −30 mA; VCE = −5 V;
16.5
(note 1)
f = 500 MHz; Tamb = 25 °C
F
noise figure
IC = −10 mA; VCE = −5 V;
f = 500 MHz; Tamb = 25 °C
−
−
2.4
−
−
dB
Vo
output voltage
see Fig.2 and note 2
300
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
2. dim = −60 dB (DIN 45004B); IC = −30 mA; VCE = −5 V; RL = 75 Ω;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q−r) = 493.25 MHz.
November 1992
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
MEA382
60
handbook, halfpage
24 V
handbook, halfpage
h
FE
560 Ω
L3
L1
390 Ω
1.2 kΩ
240 Ω
40
20
680 pF
L2
680 pF
output
75 Ω
680 pF
input
75 Ω
DUT
16 Ω
MEA383
10
0
10
20
30
40
–I (mA)
C
L2 = L3 = 5 µH Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
VCE = −5 V; Tj = 25 °C.
Fig.2 Intermodulation distortion test circuit.
Fig.3 DC current gain as a function of collector
current.
MEA925
MEA381
2.0
6
handbook, halfpage
handbook, halfpage
C
c
(pF)
f
T
(GHz)
1.6
4
1.2
0.8
0.4
0
2
0
0
4
8
12
16
20
0
10
20
30
40
–I (mA)
(V)
C
V
CB
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
VCE = −5 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Collector capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
November 1992
5
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
MEA923
MEA924
5
8
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
4
6
3
2
4
2
0
1
0
–1
0
10
20
30
40
50
(mA)
10
1
10
f (GHz)
I
C
VCE = −5 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C.
IC = −2 mA; VCE = −5 V; Zs = opt.; Tamb = 25 °C.
Fig.6 Minimum noise figure as a function of
collector current.
Fig.7 Minimum noise figure as a function of
frequency.
November 1992
6
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
November 1992
7
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1992
8
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