933379080113 [NXP]
DIODE 5.6 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regulator Diode;型号: | 933379080113 |
厂家: | NXP |
描述: | DIODE 5.6 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regulator Diode 测试 二极管 |
文件: | 总7页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
1N5225B to 1N5267B
Voltage regulator diodes
1996 Apr 26
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
Voltage regulator diodes
1N5225B to 1N5267B
FEATURES
DESCRIPTION
• Total power dissipation:
max. 500 mW
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
• Tolerance series: ±5%
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
• Working voltage range:
nom. 3.0 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, halfpage
k
a
MAM239
APPLICATIONS
• Low-power voltage stabilizers or
voltage references.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
mA
IF
continuous forward current
non-repetitive peak reverse current
−
250
IZSM
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 50 °C; lead length max.;
−
400
mW
note 1
Lead length 8 mm; note 2
−
−
500
40
mW
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
tp = 8.3 ms; square wave;
−
10
W
Tj ≤ 55 °C prior to surge
Tstg
Tj
storage temperature
junction temperature
−65
−65
+200
+200
°C
°C
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature ≤ 75 °C.
ELECTRICAL CHARACTERISTICS
Table 1
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 200 mA; see Fig.4
MAX.
UNIT
VF
1.1
V
1996 Apr 26
2
Per type
Tj = 25 °C; unless otherwise specified.
WORKING DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP. REVERSE CURRENT
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
VOLTAGE RESISTANCE
SZ (%/K)
at IZ
Cd (pF)
at REVERSE
VOLTAGE
VZ (V)(1)
at IZtest
rdif (Ω)
(2)
TYPE No.
at IZtest
tp = 100 µs; Tamb = 25 °C
IR (µA)
VR
(V)
NOM.
MAX.
MAX.
MAX.
MAX.
MAX.
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
−0.075
−0.070
−0.065
−0.060
±0.055
±0.030
±0.030
+0.038
+0.038
+0.045
+0.050
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
450
450
450
450
450
450
300
300
300
200
200
150
150
150
150
90
50
25
15
10
5
1.0
1.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.5
3.0
3.0
2.5
2.5
2.5
2.0
2.0
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
5
1.5
5
2.0
5
3.0
5
3.5
5
4.0
3
5.0
500
3
6.0
500
3
6.5
600
3
6.5
600
3
7.0
600
3
8.0
11
600
85
2
8.4
12
600
85
1
9.1
13
600
9.5
80
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
9.9
14
600
9.0
8.5
7.8
7.4
7.0
6.6
6.2
80
10.0
11.0
12.0
13.0
14.0
14.0
15.0
15
600
75
16
600
75
17
600
75
18
600
70
19
600
70
20
600
60
WORKING DIFFERENTIAL TEMP. COEFF.
TEST
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
DIODE CAP. REVERSE CURRENT
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
VOLTAGE RESISTANCE
SZ (%/K)
at IZ
Cd (pF)
at REVERSE
VOLTAGE
(2)
VZ (V)(1)
at IZtest
rdif (Ω)
TYPE No.
at IZtest
tp = 100 µs; Tamb = 25 °C
IR (µA)
VR
(V)
NOM.
MAX.
MAX.
MAX.
MAX.
MAX.
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
600
600
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
60
55
55
50
50
50
45
45
45
40
40
40
40
40
35
35
35
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
17.0
18.0
19.0
21.0
21.0
23.0
25.0
27.0
30.0
33.0
36.0
39.0
43.0
46.0
47.0
52.0
56.0
1.25
1.25
1.25
1.0
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.3
0.25
0.2
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
Notes
1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C.
2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C.
Philips Semiconductors
Product specification
Voltage regulator diodes
1N5225B to 1N5267B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Apr 26
5
Philips Semiconductors
Product specification
Voltage regulator diodes
1N5225B to 1N5267B
GRAPHICAL DATA
MBG930
3
10
δ = 1
R
th j-a
0.75
0.50
0.33
(K/W)
2
0.20
10
0.10
0.05
0.02
0.01
≤0.001
10
t
t
p
p
δ =
T
T
1
10
−1
2
3
4
5
1
10
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
MBG801
MBG803
3
10
250
handbook, halfpage
handbook, halfpage
P
ZSM
(W)
I
F
(mA)
2
10
125
(1)
10
(2)
1
10
0
0.5
−1
0.75
V
(V)
1.0
1
duration (ms)
10
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3 Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
Fig.4 Forward current as a function of forward
voltage; typical values.
1996 Apr 26
6
Philips Semiconductors
Product specification
Voltage regulator diodes
1N5225B to 1N5267B
PACKAGE OUTLINE
n
0.56
max
1.85
max
4.25
max
MLA428 - 1
25.4 min
25.4 min
Dimensions in mm.
Fig.5 SOD27 (DO-35).
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 26
7
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