933653660215 [NXP]
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 3 PIN;
| 型号： | 933653660215 |
| 厂家： | 
NXP |
| 描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 — 30 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
1.2 Features
I Very high power gain
I Low noise figure
I Very low intermodulation distortion
1.3 Applications
I RF wideband amplifiers and oscillators
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
open emitter
Min Typ Max Unit
VCBO
VCEO
IC
collector-base voltage
-
-
-
-
-
-
-
15
12
35
V
collector-emitter voltage open base
collector current
-
V
-
mA
Ptot
Cre
fT
total power dissipation
feedback capacitance
transition frequency
Tsp ≤ 95 °C
-
300 mW
IC = 0 mA; VCE = 5 V; f = 1 MHz;
0.6
6
-
-
pF
IC = 30 mA; VCE = 5 V;
f = 500 MHz;
GHz
GUM
unilateral power gain
IC = 30 mA; VCE = 8 V;
T
amb = 25 °C
f = 1 GHz
f = 2 GHz
-
-
-
13
7
-
-
-
dB
dB
dB
NF
VO
noise figure
IC = 5 mA; VCE = 8 V; f = 1 GHz;
ΓS = Γopt; Tamb = 25 °C
1.9
output voltage
IMD = −60 dB; IC = 30 mA;
-
425
-
mV
V
CE = 8 V; RL = 75 Ω;
amb = 25 °C;
fp + fq − fr = 793.25 MHz
T
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
emitter
Simplified outline
Symbol
3
2
base
3
3
collector
2
1
1
2
sym026
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
plastic surface-mounted package; 3 leads
Version
BFR93AR
SOT23
4. Marking
Table 4.
Marking
Type number
BFR93AR
Marking code
Description
*R5
* = p : made in Hong Kong
* = w : made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
15
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
12
V
open collector
-
2
V
-
35
mA
mW
[1]
Ptot
total power dissipation
storage temperature
junction temperature
Tsp ≤ 95 °C; see Figure 2
-
300
Tstg
−65
+150 °C
+175 °C
Tj
-
[1] Tsp is the temperature at the solder point of the collector pin.
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
2 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
sp ≤ 95 °C
Typ
Unit
[1]
thermal resistance from junction to solder point
T
260
K/W
[1] Tsp is the temperature at the solder point of the collector pin.
7. Characteristics
Table 7.
Symbol
ICBO
Characteristics
Parameter
Conditions
Min
Typ
-
Max
Unit
collector-base cut-off current
DC current gain
IE = 0 A; VCB = 5 V
-
50
-
nA
hFE
IC = 30 mA; VCE = 5 V; see Figure 3
40
-
90
0.7
Cc
collector capacitance
IE = ie = 0 A; VCB = 5 V; f = 1 MHz;
see Figure 4
-
pF
Ce
emitter capacitance
IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz
-
-
1.9
0.6
-
-
pF
pF
Cre
feedback capacitance
IC = ic = 0 A; VCE = 5 V; f = 1 MHz;
T
amb = 25 °C
fT
transition frequency
unilateral power gain
IC = 30 mA; VCE = 5 V; f = 500 MHz;
see Figure 5
4.5
6
-
GHz
[1]
GUM
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
see Figure 6 to Figure 9
f = 1 GHz
f = 2 GHz
-
-
13
7
-
-
dB
dB
NF
noise figure
IC = 5 mA; VCE = 8 V; ΓS = Γopt
;
T
amb = 25 °C; see Figure 12 and
Figure 13
f = 1 GHz
f = 2 GHz
-
-
-
-
1.9
3
-
-
-
-
dB
dB
mV
dB
[2][3]
[2][4]
VO
output voltage
425
−50
IMD2
second-order intermodulation
distortion
see Figure 15
[1] GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
GUM = 10 log
dB.
--------------------------------------------------------
(1 – S11 2 )(1 – S22
)
2
[2] Measured on the same crystal in a SOT37 package (BFR91A).
[3] IMD = −60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at IMD = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB at fq = 803.25 MHz;
Vr = VO −6 dB at fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz
[4] IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = 200 mV at fp = 250 MHz;
Vq = 200 mV at fp = 560 MHz;
measured at fp + fq = 810 MHz
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
3 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
1.5 nF
1.5 nF
+V
CC
+V
BB
L3
10 kΩ
1 nF
L2
1 nF
75 Ω
L1
1 nF
output
270 Ω
75 Ω
input
DUT
3.3 pF
18 Ω
0.68 pF
mbb251
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
mra702
mcd087
400
120
P
tot
(mW)
h
FE
300
80
40
0
200
100
0
0
50
100
150
200
0
10
20
30
I
(mA)
C
T
(°C)
sp
VCE = 5 V; Tj = 25 °C.
Fig 2. Power derating curve
Fig 3. DC current gain as a function of collector
current
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
4 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
mcd089
mbb252
8
6
4
2
0
1
C
c
f
T
(pF)
(GHz)
0.8
0.6
0.4
0.2
0
0
4
8
12
16
(V)
0
10
20
30
40
(mA)
V
I
C
CB
IE = ie = 0 mA; f = 1 MHz; Tj = 25 °C.
VCE = 2 V; f = 500 MHz; Tj = 25 °C.
Fig 4. Collector capacitance as a function of
collector-base voltage; typical values
Fig 5. Transition frequency as a function of collector
current; typical values
mbb255
mbb256
30
30
gain
(dB)
gain
(dB)
MSG
20
20
MSG
G
UM
G
UM
10
10
0
0
0
10
20
30
40
0
10
20
30
40
I
(mA)
C
I
(mA)
C
VCE = 8 V; f = 500 MHz.
VCE = 8 V; f = 1 GHz.
Fig 6. Gain as a function of collector current; typical
values
Fig 7. Gain as a function of collector current; typical
values
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
5 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
mbb257
mbb258
50
50
40
30
20
10
0
gain
(dB)
gain
(dB)
40
G
UM
G
UM
30
20
10
0
MSG
MSG
G
max
G
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 10 mA; VCE = 8 V.
IC = 30 mA; VCE = 8 V.
Fig 8. Gain as a function of frequency; typical values
Fig 9. Gain as a function of frequency; typical values
mbb254
mbb253
40
30
B
S
B
S
NF = 4.0 dB
(mS)
20
(mS)
20
3.5
10
3.0
1.6
3.0
NF = 3.5 dB
2.0
2.5
2.5
0
−20
−40
2.3
0
−10
−20
−30
0
20
40
60
80
(mS)
0
20
40
60
G
(mS)
S
G
S
IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C.
IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C.
Fig 10. Circles of constant noise figure; typical values
Fig 11. Circles of constant noise figure; typical values
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
6 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
mcd094
mcd095
4
4
3
2
NF
(dB)
NF
(dB)
f = 2 GHz
3
2
1
0
1 GHz
500 MHz
I
= 30 mA
C
10 mA
5 mA
1
0
10
2
1
10
10
2
3
4
I
(mA)
10
10
C
f (MHz)
VCE = 8 V.
VCE = 8 V.
Fig 12. Minimum noise figure as a function of collector
current; typical values
Fig 13. Minimum noise figure as a function of
frequency; typical values
mbb263
mbb264
−40
−30
IMD2
(dB)
IMD
(dB)
−45
−35
−50
−55
−40
−45
−60
−65
−50
−55
0
10
20
30
40
0
10
20
30
40
I
(mA)
I
(mA)
C
C
VCE = 8 V; VO = 425 mV (52.6 dBmV);
fp + fq − fr = 793.25 MHz; Tamb = 25 °C.
Measured in MATV test circuit; see Figure 1.
VCE = 8 V; VO = 200 mV (46 dBmV);
fp + fq − fr = 810 MHz; Tamb = 25 °C.
Measured in MATV test circuit; see Figure 1.
Fig 14. Intermodulation distortion; typical values
Fig 15. Second order intermodulation distortion;
typical values
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
7 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
1
0.5
2
0.2
5
0.5
10
1200
0.2 800
+ j
1000
1
2
5
10
∞
0
500
200
− j
10
5
0.2
100 MHz
2
0.5
mbb259
1
IC = 30 mA; VCE = 8 V; ZO = 50 Ω;Tamb = 25 °C.
Fig 16. Common emitter input reflection coefficient (S11)
90°
120°
60°
100
200
150°
30°
500
800
1000
1200 MHz
+ϕ
10
20
30
180°
0°
−ϕ
30°
150°
60°
120°
mbb261
90°
IC = 30 mA; VCE = 8 V; Tamb = 25 °C.
Fig 17. Common emitter forward transmission coefficient (S21)
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
8 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
90°
1200
120°
60°
1000
800
150°
30°
500
200
100 MHz
+ϕ
0.05
0.1
0.15
180°
0°
−ϕ
30°
150°
60°
120°
mbb262
90°
IC = 30 mA; VCE = 8 V; Tamb = 25 °C.
Fig 18. Common emitter reverse transmission coefficient (S12)
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
∞
0
800
500
1000
− j
10
200
1200
5
100 MHz
0.2
2
0.5
mbb260
1
IC = 30 mA; VCE = 8 V; ZO = 50 Ω;Tamb = 25 °C.
Fig 19. Common emitter output reflection coefficient (S22)
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
9 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 20. Package outline SOT23
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
10 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
9. Abbreviations
Table 8.
Abbreviations
Description
Acronym
NPN
Negative Positive Negative
Positive Negative Positive
Radio Frequency
PNP
RF
MATV
Master Antenna Television
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFR93AR_1
20061130
Product data sheet
-
-
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
11 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
11.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BFR93AR_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 November 2006
12 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 November 2006
Document identifier: BFR93AR_1
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