933750250235 [NXP]
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3;
| 型号： | 933750250235 |
| 厂家： | 
NXP |
| 描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17A
NPN 3 GHz wideband transistor
September1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
handbook, halfpage
3
APPLICATIONS
• It is intended for RF applications such as oscillators
in TV tuners.
1
2
Top view
MSB003
PINNING
PIN
DESCRIPTION
Marking code: E2p.
1
2
3
base
emitter
collector
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
25
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
open emitter
open base
−
−
−
−
V
V
15
25
300
−
mA
Ptot
fT
up to Ts = 70 °C; note 1
IC = 25 mA; VCE = 5 V; f = 500 MHz;
amb = 25 °C
mW
GHz
2.8
T
GUM
F
maximum unilateral power gain
noise figure
IC = 14 mA; VCE = 10 V; f = 800 MHz
13.5
2.5
−
−
dB
dB
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C
VO
output voltage
dim = −60 dB; IC = 14 mA; VCE = 10 V; 150
RL = 75 Ω; Tamb = 25 °C;
−
mV
f(p+q−r) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
−
−
−
−
−
25
V
15
V
open collector
2.5
25
V
mA
mA
mW
°C
°C
ICM
50
Ptot
Tstg
Tj
up to Ts = 70 °C; note 1
300
+150
150
−65
−
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
September1995
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
260
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts = 70 °C; note 1
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
hFE
IE = 0; VCB = 10 V
−
−
50
−
nA
IC = 2 mA; VCE = 1 V; Tamb = 25 °C
25
90
90
2.8
IC = 25 mA; VCE = 1 V; Tamb = 25 °C 25
−
fT
transition frequency
collector capacitance
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C
−
−
GHz
pF
Cc
IE = 0; VCB = 10 V; f = 1 MHz;
−
0.7
−
Tamb = 25 °C
Ce
emitter capacitance
IC = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 5 V; f = 1 MHz
−
−
−
1.25
0.6
−
−
−
pF
pF
dB
Cre
GUM
feedback capacitance
maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 800 MHz
note 1
13.5
F
noise figure
IC = 2 mA; VCE = 5 V; ZS = 60 Ω;
f = 800 MHz; Tamb = 25 °C
−
−
2.5
−
−
dB
VO
output voltage
note 2
150
mV
Notes
2
S21
--------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
2
2
1 – S11
1 – S22
2. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
September1995
3
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
1.5 nF
1.5 nF
V
CC
V
BB
L3
10 kΩ
1 nF
L2
1 nF
75 Ω
output
L1
270 Ω
1 nF
75 Ω
DUT
input
3.3 pF
18 Ω
0.68 pF
MBB251
L1 = L3 = 5 µH Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
MEA395
MEA903
100
1
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
50
0.5
0
0
0
10
20
30
0
4
8
12
16
I
(mA)
V
(V)
C
CB
VCE = 1 V; Tamb = 25 °C.
IE = 0; f = 1 MHz; Tamb = 25 °C.
Fig.3 DC current gain as a function of
collector current.
Fig.4 Collector capacitance as a function of
collector-base voltage.
September1995
4
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
MEA904
MEA902
4
5
handbook, halfpage
handbook, halfpage
f
F
(dB)
T
(GHz)
4
3
3
2
2
1
0
1
0
0
0
20
40
10
20
I
(mA)
I
(mA)
C
C
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
VCE = 5 V; Zs = 60 Ω; f = 800 MHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
Fig.6 Minimum noise figure as a function of
collector current.
September1995
5
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
3
1.1
max
0.48
0.38
0.1 M
A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.7 SOT23.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September1995
6
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