933769900235 [NXP]
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal;
| 型号： | 933769900235 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC856; BC857; BC858
PNP general purpose transistors
Product specification
2003 Apr 09
Supersedes data of 2002 Feb 04
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
DESCRIPTION
1
2
3
base
emitter
APPLICATIONS
collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
handbook, halfpage
3
3
2
MARKING
1
TYPE NUMBER
BC856
MARKING CODE(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3K*
1
2
BC856A
BC856B
BC857
Top view
MAM256
BC857A
BC857B
BC857C
BC858B
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
2003 Apr 09
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
BC856
−
−
−
−80
V
V
V
BC857
−50
−30
BC858
VCEO
collector-emitter voltage
BC856
open base
−
−
−
−
−
−
−
−
−65
V
V
V
V
BC857
−45
BC858
−30
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
−5
−100
−200
−200
250
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
2003 Apr 09
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
collector-base cut-off current
VCB = −30 V; IE = 0
−
−1
−15
−4
nA
V
CB = −30 V; IE = 0;
−
−
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = −5 V; IC = 0
IC = −2 mA; VCE = −5 V
−
−
−100
nA
BC856
125
125
125
220
420
−
−
475
800
250
475
800
−300
−650
BC857
−
BC856A; BC857A
BC856B; BC857B; BC858B
BC857C
−
−
−
VCEsat
VBEsat
VBE
collector-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−75
−250
mV
mV
IC = −100 mA; IB = −5 mA;
−
note 1
base-emitter saturation voltage
base-emitter voltage
IC = −10 mA; IB = −0.5 mA
−
−
−700
−850
−
−
mV
mV
IC = −100 mA; IB = −5 mA;
note 1
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
−600
−650
−
−750
−820
−
mV
mV
pF
−
−
Cc
fT
collector capacitance
transition frequency
noise figure
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
4.5
VCE = −5 V; IC = −10 mA; 100
f = 100 MHz
−
−
MHz
dB
F
IC = −200 µA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−
2
10
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Apr 09
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
MGT711
MGT712
500
−1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
−1000
400
(1)
(2)
(1)
−800
−600
−400
−200
0
300
(2)
200
(3)
(3)
100
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
BC857A; VCE = −5 V.
(1) Tamb = 150 °C.
BC857A; VCE = −5 V.
(1) Tamb = −55 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MGT713
MGT714
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
(3)
−600
2
−400
−200
0
−10
(1)
(3) (2)
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
BC857A; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857A; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Apr 09
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
MGT715
MGT716
1000
−1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(1)
400
(3)
(2)
200
(3)
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
BC857B; VCE = −5 V.
(1) Tamb = 150 °C.
BC857B; VCE = −5 V.
(1) Tamb = −55 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.6 DC current gain as a function of collector
current; typical values.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
MGT717
MGT718
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
−1000
(mV)
(1)
3
−10
−800
(2)
−600
(3)
2
−400
−10
(1)
−200
(3) (2)
0
−10
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
(mA)
−1
−10
−10
−10
(mA)
I
I
C
C
BC857B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857B; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Apr 09
6
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
MGT719
MGT720
1000
−1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
(1)
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(2)
400
(3)
(3)
200
0
−10
−1
2
3
−2
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
BC857C; VCE = −5 V.
(1) Tamb = 150 °C.
BC857C; VCE = −5 V.
(1) Tamb = −55 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
MGT721
MGT722
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
−1000
(mV)
(1)
3
−10
−800
(2)
−600
(3)
2
−400
−10
(1)
−200
(3) (2)
0
−10
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
(mA)
−1
−10
−10
−10
(mA)
I
I
C
C
BC857C; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC857C; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Apr 09
7
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Apr 09
8
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Apr 09
9
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
NOTES
2003 Apr 09
10
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
NOTES
2003 Apr 09
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/05/pp12
Date of release: 2003 Apr 09
Document order number: 9397 750 11376
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Low current (max. 100 mA)
Low voltage (max. 65 V).
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General purpose switching and amplification.
AN10116_2: Breakthrough In Small Signal - Low V
Aug-02)
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Datasheet
Type
number
Title
Publication
release date
Datasheet status
Page
count
File
size
(kB)
Datasheet
BC856;
BC857;
BC858
PNP general
purpose
transistors
4/9/2003
Product
specification
12
75
Download
Parametrics
Type
Package hFE hFE fT
POLARITY I
VCEO Ptot
Complement
C
number
min max min(MHz)
max(V) max(mW)
max(mA)
SOT23
(SST3)
BC856
125 475 100
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
100
65
65
65
45
45
45
45
30
250
250
250
250
250
250
250
250
BC846
SOT23
(SST3)
BC856A
BC856B
BC857
125 250 100
220 475 100
125 800 100
125 250 100
220 475 100
420 800 100
220 475 100
100
100
100
100
100
100
100
BC846A
BC846B
BC847
SOT23
(SST3)
SOT23
(SST3)
SOT23
(SST3)
BC857A
BC857B
BC857C
BC858B
BC847A
BC847B
BC847C
BC848B
SOT23
(SST3)
SOT23
(SST3)
SOT23
(SST3)
Products, packages, availability and ordering
Type
North
Ordering code Marking/Packing Package Device status Buy online
Discretes packing
number American (12NC)
info
type
number
Standard Marking
9335 897 10215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC856
T/R
BC856
Full production
Full production
Full production
Full production
Full production
Full production
Standard Marking
9335 897 20185 * Multi-Reel Pack,
SMD, Pitch 4mm
SOT23
(SST3)
BC856A
/T4
BC856A
Standard Marking
9335 897 20215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC856A
T/R
Standard Marking
9335 897 30185 * Multi-Reel Pack,
SMD, Pitch 4mm
SOT23
(SST3)
BC856B
/T4
BC856B
Standard Marking
9335 897 30215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC856B
T/R
Standard Marking
9335 897 30235 * Reel Pack, SMD,
Low Profile, Large
SOT23
(SST3)
BC856B
/T3
Standard Marking
9335 897 40185 * Multi-Reel Pack,
SMD, Pitch 4mm
SOT23
(SST3)
BC857
/T4
BC857
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Standard Marking
9335 897 40215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC857
T/R
Standard Marking
9335 897 40235 * Reel Pack, SMD,
Low Profile, Large
SOT23
(SST3)
BC857
/T3
Standard Marking
9335 897 50215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC857A
T/R
BC857A
BC857B
Standard Marking
9335 897 60185 * Multi-Reel Pack,
SMD, Pitch 4mm
SOT23
(SST3)
BC857B
/T4
Standard Marking
9335 897 60215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC857B
T/R
Standard Marking
9335 897 60235 * Reel Pack, SMD,
Low Profile, Large
SOT23
(SST3)
BC857B
/T3
Standard Marking
9337 699 00185 * Multi-Reel Pack,
SMD, Pitch 4mm
SOT23
(SST3)
BC857C
/T4
BC857C
Standard Marking
9337 699 00215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC857C
T/R
Standard Marking
9337 699 00235 * Reel Pack, SMD,
Low Profile, Large
SOT23
(SST3)
BC857C
/T3
Standard Marking
9335 897 90185 * Multi-Reel Pack,
SMD, Pitch 4mm
SOT23
(SST3)
BC858B
/T4
BC858B
-
Standard Marking
9335 897 90215 * Reel Pack, SMD,
Low Profile
SOT23
(SST3)
BC858B
T/R
Standard Marking
9335 897 90235 * Reel Pack, SMD,
Low Profile, Large
SOT23
(SST3)
-
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category.
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Spice model of BC856A
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Spice model of BC857C
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Spice model of BC857
General Application Products 2000 / 2001(date 01-Oct-20)
Letter Symbols - Transistors General(date 01-May-99)
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