933789450127 [NXP]

Silicon Controlled Rectifier, 9 A, 800 V, SCR;


型号：	933789450127
厂家：	NXP
描述：	Silicon Controlled Rectifier, 9 A, 800 V, SCR 局域网栅栅极
文件：	总8页 (文件大小：71K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Thyristors

BT151F series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated thyristors in a full pack,

plastic envelope, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

applications

bidirectional

requiring

blocking

high

BT151F-

500

650

800

voltage

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state

capability and high thermal cycling

performance. Typical applications

include motor control, industrial and

domestic lighting, heating and static

switching.

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

5.7

100

5.7

100

5.7

100

I_T(RMS)

I_TSM

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

case

anode

gate

2 3

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-650

-800

800

V_DRM, V_RRMRepetitive peak off-state

voltages

500¹

650¹

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current half sine wave; T_hs≤ 87 ˚C

5.7

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 125 ˚C prior

to surge; with reapplied V_DRM(max)

t = 10 ms

100

110

t = 8.3 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

I_TM= 20 A; I_G= 50 mA;

dI_G/dt = 50 mA/µs

A²s

A/µs

I_GM

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.5

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

June 1999

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

BT151F series

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree

1500

three terminals to external

heatsink

Capacitance from T2 to external f = 1 MHz

heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

Thermal resistance

junction to heatsink

Thermal resistance

junction to ambient

with heatsink compound

without heatsink compound

in free air

4.5

6.5

K/W

R_{th j-a}

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_GT

I_L

Gate trigger current

Latching current

Holding current

V_D= 12 V; I_T= 0.1 A

V_D= 12 V; I_GT= 0.1 A

I_T= 23 A

I_H

V_T

V_GT

On-state voltage

Gate trigger voltage

1.4

0.6

0.4

0.1

1.75

1.5

V_D= 12 V; I_T= 0.1 A

V_D= V_DRM(max); I_T= 0.1 A; T_j= 125 ˚C

0.25

I_D, I_R

Off-state leakage current V_D= V_DRM(max); V_R= V_RRM(max); T_j= 125 ˚C

0.5

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

dV_D/dt

Critical rate of rise of

off-state voltage

V_DM= 67% V_DRM(max); T_j= 125 ˚C;

exponential waveform

Gate open circuit

_GK= 100 Ω

200

130

1000

V/µs

µs

t_gt

t_q

Gate controlled turn-on

time

Circuit commutated

turn-off time

I_TM= 40 A; V_D= V_DRM(max); I_G= 0.1 A;

dI_G/dt = 5 A/µs

V_D= 67% V_DRM(max); T_j= 125 ˚C;

I_TM= 20 A; V_R= 25 V; dI_TM/dt = 30 A/µs;

dV_D/dt = 50 V/µs; R_GK= 100 Ω

µs

June 1999

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

BT151F series

ITSM / A

Ptot / W

Ths(max) / C

a = 1.57

120

100

conduction form

TSM

time

angle

factor

2.8

2.2

1.9

1.57

degrees

120

180

1.9

Tj initial = 25 C max

2.2

2.8

107

116

125

100

1000

IF(AV) / A

Number of half cycles at 50Hz

Fig.1. Maximum on-state dissipation, P_tot, versus

average on-state current, I_T(AV), where

Fig.4. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

a = form factor = I_T(RMS)/ I_T(AV)

ITSM / A

IT(RMS) / A

1000

100

dI_T/dt limit

TSM

time

Tj initial = 25 C max

10ms

10us

100us

1ms

0.01

0.1

surge duration / s

T / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 10ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_hs≤ 87˚C.

IT(RMS) / A

VGT(Tj)

VGT(25 C)

1.6

87 C

1.4

1.2

0.8

0.6

0.4

-50

Ths / C

100

150

-50

Tj / C

100

150

Fig.3. Maximum permissible rms current I_T(RMS)

versus heatsink temperature T_hs.

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

June 1999

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

BT151F series

IT / A

IGT(Tj)

IGT(25 C)

Tj = 125 C

Tj = 25 C

2.5

Vo = 1.06 V

Rs = 0.0304 ohms

typ

max

1.5

0.5

-50

Tj / C

100

150

0.5

1.5

VT / V

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

Zth j-hs (K/W)

BT145

2.5

without heatsink compound

0.1

with heatsink compound

1.5

0.01

0.001

0.5

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

versus junction temperature T_j.

Fig.11. Transient thermal impedance Z_{th j-hs}, versus

pulse width t_p.

IH(Tj)

IH(25 C)

dVD/dt (V/us)

10000

2.5

1000

RGK = 100 Ohms

1.5

100

gate open circuit

0.5

-50

Tj / C

100

150

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

versus junction temperature T_j.

Fig.12. Typical, critical rate of rise of off-state voltage,

dV_D/dt versus junction temperature T_j.

June 1999

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

BT151F series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.2

max

5.7

max

3.2

3.0

4.4

max

0.9

0.5

2.9 max

4.4

4.0

7.9

7.5

max

seating

plane

3.5 max

not tinned

4.4

13.5

min

0.9

0.7

0.4

0.55 max

1.3

2.54

5.08

top view

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

June 1999

Rev 1.200

Philips Semiconductors

Product specification

Thyristors

BT151F series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

June 1999

Rev 1.200

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Year

2000

Microcontrollers

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Cross reference

Models

Description

Packages

Passivated thyristors in a full pack, plastic envelope, intended for use in

applications requiring high bidirectional blocking voltage capability and high thermal

cycling performance. Typical applications include motor control, industrial and

domestic lighting, heating and static switching.

Application notes

Selection guides

933789450127 [NXP]

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