933930220115 [NXP]
0.2A, 100V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN;
| 型号： | 933930220115 |
| 厂家： | 
NXP |
| 描述： | 0.2A, 100V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN 二极管 |
| 文件： | 总12页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PMLL4148L; PMLL4448
High-speed diodes
Product specification
2002 Jan 23
Supersedes data of 2000 Nov 15
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
FEATURES
DESCRIPTION
• Small hermetically sealed glass
SMD package
The PMLL4148L and PMLL4448 are high-speed switching diodes fabricated in
planar technology, and encapsulated in small hermetically sealed glass
SOD80C SMD packages. PMLL4148L was formerly named PMLL4148 and
has no difference to this type in technical specification, processing, packing or
labelling.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 100 V
• Repetitive peak forward current:
max. 450 mA.
k
a
handbook, 4 columns
MAM061
APPLICATIONS
• High-speed switching
• Fast logic applications.
The marking band indicates the cathode.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
75
IF
see Fig.2; note 1
200
450
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
500
+200
200
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Jan 23
2
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
PMLL4148L
PMLL4448
IF = 10 mA
−
1
V
IF = 5 mA
620
720
1
mV
V
IF = 100 mA
−
IR
reverse current
VR = 20 V; see Fig.5
VR = 20 V; Tj = 150 °C; see Fig.5
VR = 20 V; Tj = 100 °C; see Fig.5
f = 1 MHz; VR = 0; see Fig.6
25
50
3
nA
µA
µA
pF
ns
−
−
IR
reverse current; PMLL4448
diode capacitance
Cd
trr
4
reverse recovery time
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
4
measured at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 50 mA;
−
2.5
V
tr = 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
300
UNIT
Rth j-tp
Rth j-a
K/W
K/W
350
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Jan 23
3
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
GRAPHICAL DATA
MBG451
MBG464
300
600
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
400
(1)
(2)
(3)
100
200
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2002 Jan 23
4
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
MGD006
MGD004
3
10
1.2
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.0
2
10
(1)
(2)
(3)
10
0.8
0.6
1
−1
10
−2
10
0.4
0
0
100
200
o
10
20
T ( C)
V
(V)
j
R
(1) VR = 75 V; maximum values.
(2)
VR = 75 V; typical values.
(3) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2002 Jan 23
5
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
2002 Jan 23
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package; 2 connectors
SOD80C
k
a
(1)
D
L
L
H
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
L
D
H
UNIT
scale
1.60
1.45
3.7
3.3
mm
0.3
Note
1. The marking band indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-20
SOD80C
100H01
2002 Jan 23
7
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
DATA SHEET STATUS
PRODUCT
STATUS(2)
DATA SHEET STATUS(1)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Product data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jan 23
8
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
NOTES
2002 Jan 23
9
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
NOTES
2002 Jan 23
10
Philips Semiconductors
Product specification
High-speed diodes
PMLL4148L; PMLL4448
NOTES
2002 Jan 23
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/05/pp12
Date of release: 2002 Jan 23
Document order number: 9397 750 09265
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