933981790126 [NXP]
TRANSISTOR 200 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SPT, SOT-54 VARIANT, 3 PIN, FET General Purpose Small Signal;
| 型号： | 933981790126 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 200 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SPT, SOT-54 VARIANT, 3 PIN, FET General Purpose Small Signal 开关 晶体管 |
| 文件： | 总12页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP254; BSP254A
P-channel enhancement mode
vertical D-MOS transistor
April 1995
Product specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
FEATURES
QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
etc.
SYMBOL
PARAMETER
CONDITIONS MIN. TYP. MAX. UNIT
VDS
drain-source
voltage
−
−
−250
±20
−
V
• High-speed switching
• No secondary breakdown.
VGSO
Yfs
gate-source
voltage
open drain
−
−
V
forward transfer
admittance
ID = −200 mA; 100 200
VDS = −25V
mS
DESCRIPTION
P-channel vertical D-MOS transistor
in a TO-92 variant envelope and
intended for use as a line current
interruptor in relay, high-speed and
line transformer drivers.
ID
drain current (DC)
drain-source
on-state resistance ID = −200 mA
−
−
−
−0.2
A
RDS(on)
VGS = −10 V;
10
15
Ω
Ptot
total power
dissipation
Tamb = 25 °C
−
−
1
W
PINNING - TO-92 variant BSP254
PIN
DESCRIPTION
1
2
3
gate
d
s
handbook, halfpage
drain
1
2
3
source
g
PINNING - TO-92 variant BSP254A
MAM147
PIN
DESCRIPTION
source
1
2
3
gate
Fig.1 Simplified outline and symbol.
drain
April 1995
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134)
SYMBOL
−VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
250
UNIT
−
−
−
−
−
V
V
A
A
V GSO
−ID
gate-source voltage
drain current
open drain
20
DC
0.2
0.6
1
−IDM
Ptot
drain current
peak value
Tamb = 25 °C (note 1)
total power dissipation
storage temperature range
junction temperature
W
Tstg
Tj
−65
+150
150
°C
°C
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
MAX.
125
UNIT
K/W
Rth j-a
from junction to ambient (note 1)
Note
1. Transistor mounted on printed circuit board, maximum lead length 4 mm,
mounting pad for drain lead minimum 10 mm x 10 mm.
MRC238
1.2
handbook, halfpage
P
tot
(W)
0.8
0.4
0
0
50
100
150
200
(°C)
T
amb
Fig.2 Power derating curve.
April 1995
3
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
−V(BR)DSS
PARAMETER
CONDITIONS
−VGS = 0
MIN.
250
TYP. MAX. UNIT
drain-source breakdown voltage
−
−
V
−ID = 10 µA
−IDSS
±IGSS
−VGS(th)
RDS(on)
Yfs
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
−VDS = 200 V
VGS = 0
−
−
1
µA
nA
V
±VGS = 20 V
VDS = 0
−
−
100
2.8
15
−
VGS = VDS
−ID = 1 mA
0.8
−
−
−VGS = 10 V
−ID = 200 mA;
10
200
Ω
−VDS = 25 V
−ID = 200 mA
100
mS
Ciss
Coss
Crss
ton
input capacitance
output capacitance
feedback capacitance
turn-on time
note 1
note 1
note 1
note 2
note 2
−
−
−
−
−
65
20
6
90
30
15
10
30
pF
pF
pF
ns
ns
5
toff
turn-off time
20
Notes
1. Measured at f = 1 MHz; −VDS = 25 V; VGS = 0.
2. −VGS = 0 to 10 V; −ID = 250 mA; −VDD = 50 V.
handbook, halfpage
V
= −50 V
DD
handbook, halfpage
INPUT
10 %
90 %
10 %
0 V
I
D
OUTPUT
−10 V
50 Ω
90 %
MBB689
t
t
off
on
MBB690
Fig.3 Switching times test circuit.
Fig.4 Input and output waveforms.
April 1995
4
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
MDA706
MDA707
−1
−1
handbook, halfpage
handbook, halfpage
V
= −10 V
−6 V
GS
I
I
D
(A)
D
(A)
−0.8
−0.8
−0.6
−0.4
−0.6
−0.4
−5 V
−4 V
−0.2
−0.2
−3 V
−15
0
0
0
0
−5
−10
−20
V
−25
(V)
−2
−4
−6
−8
V
−10
(V)
DS
GS
Fig.5 Typical output characteristics; Tj = 25 °C.
Fig.6 Typical transfer characteristic; VDS = −10 V;
Tj = 25 °C.
MDA734
MDA708
3
−10
160
handbook, halfpage
handbook, halfpage
V
= −10 V
−5 V
GS
C
(pF)
I
D
120
(mA)
−4 V
2
−10
80
40
0
C
iss
C
C
oss
rss
−10
8
12
16
20
24
R
28
(Ω)
0
−5
−10
−15
−20
V
−25
(V)
DS
DSon
Fig.7 Typical on-resistance as a function of drain
Fig.8 Typical capacitances as a function of
drain-source voltage; VGS = 0; f = 1 MHz;
Tj = 25 °C.
current, Tj = 25 °C.
April 1995
5
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
MDA710
MDA711
2.5
1.1
handbook, halfpage
handbook, halfpage
k
k
2
1
1.5
1
0.9
0.8
0.5
0
0.7
−50
−50
0
50
100
150
0
50
100
150
T (°C)
T (°C)
j
j
Fig.9
Fig.10
–VGS (th ) at Tj
RDS (on ) at Tj
k = -----------------------------------------------
RDS (on ) at 25 °C
k = -------------------------------------------------
–VGS (th ) at 25 °C
typical VGS(th) at −1 mA.
typical RDS(on) at −200 mA/−10 V.
April 1995
6
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
PACKAGE OUTLINES
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
mm
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
2.54
1.27
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
EIAJ
97-04-14
SOT54 variant
TO-92
SC-43
April 1995
7
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
8
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
NOTES
April 1995
9
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
NOTES
April 1995
10
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
NOTES
April 1995
11
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© Philips Electronics N.V. 1997
SCA54
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Date of release: April 1995
Document order number: 9397 750 02484
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