933994050114 [NXP]
L BAND, Si, NPN, RF POWER TRANSISTOR, METAL CERAMIC, SOT-443A, 3 PIN;
| 型号： | 933994050114 |
| 厂家： | 
NXP |
| 描述： | L BAND, Si, NPN, RF POWER TRANSISTOR, METAL CERAMIC, SOT-443A, 3 PIN 局域网 放大器 CD 晶体管 |
| 文件： | 总14页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B100Y; MZ0912B100Y
NPN microwave power transistors
1997 Feb 20
Product specification
Supersedes data of June 1992
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
FEATURES
PINNING
• Interdigitated structure provides high emitter efficiency
PIN
DESCRIPTION
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
1
2
3
collector
emitter
• Gold metallization realizes very stable characteristics
and excellent lifetime
base connected to flange
• Multicell geometry improves power sharing and low
thermal resistance
1
lumns
• Input and output matching cell allows an easier design
of circuits.
c
b
APPLICATIONS
3
3
e
• Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
2
MAM045
Top view
Fig.1 Simplified outline and symbol (SOT439A).
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
handbook, halfpage
1
c
The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
b
3
e
2
Top view
MAM314
Fig.2 Simplified outline and symbol (SOT443A).
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband amplifier.
f
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(Ω)
MODE OF OPERATION
(GHz)
Class-C; tp = 10 µs; δ = 10 %
0.960 to 1.215
50
>100
>7
>42
see Figs 8 and 9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20
2
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
65
UNIT
−
−
−
−
−
−
V
V
V
V
A
W
VCES
VCEO
VEBO
IC
RBE = 0 Ω
60
20
3
open base
open collector
tp ≤ 10 µs; δ ≤ 10 %
collector current (DC)
6
Ptot
total power dissipation
(peak power)
tp ≤ 10 µs; δ ≤ 10 %;
Tmb = 75 °C
290
Tstg
Tj
storage temperature
−65
−
+200
200
°C
°C
°C
operating junction temperature
soldering temperature
Tsld
up to 0.2 mm from ceramic;
−
235
t ≤ 10 s
MGL046
300
handbook, halfpage
P
tot
(W)
200
100
0
−
50
0
100
200
T
(°C)
mb
tp = 10 µs; δ = 10 %; Ptot max = 290 W.
Fig.3 Maximum power dissipation derating as a
function of mounting-base temperature.
1997 Feb 20
3
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
3.2
UNIT
K/W
K/W
K/W
Rth j-mb
Rth mb-h
Zth j−h
thermal resistance from junction to mounting-base Tj = 125 °C
thermal resistance from mounting-base to heatsink Tj = 125 °C; note 1
0.2
thermal impedance from junction to heatsink
tp = 10 µs; δ = 10 %;
0.43
Tj = 125 °C; notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
CONDITIONS
MAX.
UNIT
ICBO
VCB = 65 V; IE = 0
40
4
mA
V
CB = 50 V; IE = 0
mA
mA
µA
ICES
IEBO
collector cut-off current
emitter cut-off current
VCB = 60 V; RBE = 0 40
VEB = 1.5 V; IC = 0 400
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C measured in the test jig as shown in Fig.7 and working in class C broadband
in pulse mode; note 1.
f
VCC
PL
(W)
Gp
(dB)
ηC
(%)
Zi/ZL
(Ω)
MODE OF OPERATION
Class C;
(GHz)
(V)(2)
0.960 to 1.215
50
≥100
≥7
≥42
see Figs 8 and 9
tp = 10 µs; δ = 10%
typ. 115
typ. 7.6
typ. 44
tp = 300 µs; δ = 10%;
1.03 to 1.09
50
typ. 125
typ. 8
typ. 50
see Fig.6
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
1997 Feb 20
4
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
MGL047
MGL048
130
50
handbook, halfpage
handbook, halfpage
P
L
(W)
η
(%)
C
120
45
110
0.95
40
0.95
1.05
1.15
1.25
1.05
1.15
1.25
f (GHz)
f (GHz)
VCC = 50 V; tp = 10 µs; δ = 10%.
VCC = 50 V; tp = 10 µs; δ = 10%.
Fig.5 Collector efficiency as a function of
Fig.4 Load power as a function of frequency.
(In broadband test circuit as shown in Fig.7)
frequency. (In broadband test circuit as
shown in Fig.7)
1997 Feb 20
5
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
1 µs
1 µs
300 µs
MGK066
3 ms
Fig.6 Pulse definition.
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1
0.65 mm diameter copper wire −
total length = 12 mm;
height of loop = 12 mm
−
−
L2
4 turns 0.65 mm diameter
copper wire
−
int. dia. 3 mm; L = 5 mm
C1
capacitor
100 pF
−
−
−
−
−
ATC, ref. 100A101KP50X
C2
tantalum capacitor
10 µF; 50 V
470 µF; 63 V
−
−
C3
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
−
C4
Erie, ref. 1250-003
Tekelec, ref. 727.1
C5, C6
0.6 to 4.5 pF
1997 Feb 20
6
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
30
30
3 1 3
10
3
10
18
2
3
3
4
5
40
40
0.635
0.635
5
7
10
12.5
16
+V
CC
C3
C4
C2
L1
L2
C1
C5
MGK067
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.7 Broadband test circuit.
7
1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
1
0.5
2
0.2
1.215 GHz
+ j
5
10
0.2
0.5
1
2
5
10
0
∞
0.960 GHz
− j
10
5
0.2
2
0.5
MGL044
1
VCC = 50 V; Zo = 10 Ω; PL = 100 W.
Fig.8 Input impedance as a function of frequency associated with optimum load impedance.
1
0.5
2
0.2
5
10
+ j
− j
0.2
0.5
1
2
5
10
0
∞
1.215 GHz
0.960 GHz
10
5
0.2
2
0.5
MGL045
1
VCC = 50 V; Zo = 10 Ω.; PL = 100 W.
Fig.9 Optimum load impedance as a function of frequency associated with input impedance.
8
1997 Feb 20
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
PACKAGE OUTLINES
12.85 max
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
10.3
10.0
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3
Recommended pitch for mounting screw: 19 mm.
Fig.10 SOT439A.
1997 Feb 20
9
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
24 max
0.5 Y
0.1
6.4
max
3.5
2.9
3
1.7 max
seating plane
Y
3.1
1
4 min
0.5 X
X
10.5
max
23
max
10.5
max
3.4
3.2
0.5 X
2
MBC663
16.5
0.5 Y
Dimensions in mm.
Torque on nut: max 0.5 Nm.
Recommended screw: M3
Fig.11 SOT443A.
1997 Feb 20
10
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 20
11
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Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 20
Document order number: 9397 750 01717
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MX0912B100Y;
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NPN microwave power transistors
20-Feb-97
Product
Specification
12
98
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SOT439 Full production
Standard Marking * Trade
Pack
MX0912B100Y
9340 548 87114
Standard Marking * Trade
Pack
MZ0912B100Y MZ0912B100Y TRAY
9339 940 50114
SOT443 Full production
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