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934009540114 [NXP]

TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power;
934009540114
型号： 934009540114
厂家： NXP    NXP
描述：

TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
RX1214B350Y  
NPN microwave power transistor  
1997 Feb 18  
Product specification  
Superseded data of November 1994  
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
FEATURES  
QUICK REFERENCE DATA  
Microwave performance up to Tmb = 25 °C in a common base class C  
• Suitable for short and medium  
pulse applications up to 1 ms/10%  
broadband amplifier.  
• Internal input prematching  
networks allow an easier design of  
circuits  
MODE OF  
OPERATION  
f
VCC  
(V)  
PL  
(W)  
Gp  
(dB)  
ηC  
(%)  
CONDITIONS  
(GHz)  
Class C  
tp = 130 µs;  
δ = 6%  
1.2 to 1.4  
50  
280  
≥7  
≥40  
• Diffused emitter ballasting resistors  
improve ruggedness  
• Interdigitated emitter-base  
structure provides high emitter  
efficiency  
PINNING - SOT439A  
PIN  
DESCRIPTION  
1
2
3
collector  
emitter  
• Gold metallization with barrier  
realizes very stable characteristics  
and excellent lifetime  
base connected to flange  
• Multicell geometry improves power  
sharing and reduces thermal  
resistance.  
APPLICATIONS  
1
handbook, 4 columns  
Common base, class C, broadband,  
pulsed power amplifiers for L-Band  
radar applications in the  
c
b
1.2 to 1.4 GHz band. Also suitable for  
medium pulse, heavy duty operation  
within this band.  
3
3
e
2
MAM045  
Top view  
DESCRIPTION  
NPN silicon planar epitaxial  
microwave power transistor in a  
SOT439A metal ceramic flange  
package with base connected to  
flange.  
Fig.1 Simplified outline and symbol.  
WARNING  
Product and environmental safety - toxic materials  
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.  
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety  
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of  
the user. It must never be thrown out with the general or domestic waste.  
1997 Feb 18  
2
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
LIMITING VALUES  
In accordance with the Absolute Maximum System (IEC 134).  
SYMBOL  
VCBO  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
65  
UNIT  
−
−
−
−
−
−
V
VCEO  
VCES  
VEBO  
IC  
collector-emitter voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
total power dissipation  
open base  
20  
65  
3
V
V
V
A
W
RBE = 0 Ω  
open collector  
tp ≤ 130 µs; δ ≤ 6%  
25  
750  
Ptot  
Tmb < 75 °C;  
tp ≤ 30 µs; δ ≤ 1%  
Tstg  
Tj  
storage temperature  
−65  
−
200  
200  
235  
°C  
°C  
°C  
operating junction temperature  
soldering temperature  
Tsld  
t ≤ 10 s; note 1  
−
Note  
1. Up to 0.2 mm from ceramic.  
MGA259  
800  
handbook, halfpage  
P
tot  
(W)  
600  
400  
200  
0
–100  
0
100  
200  
300  
( C)  
o
T
amb  
Ptot max = 750 W; tp ≤ 30 µs; δ ≤ 1%.  
Fig.2 Maximum power dissipation derating as a  
function of mounting base temperature.  
1997 Feb 18  
3
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-mb  
Rth mb-h  
Zth j-h  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
thermal resistance from junction to mounting base Tj = 120 °C  
1.2  
K/W  
K/W  
K/W  
thermal resistance from mounting base to heatsink note 1  
0.2  
thermal impedance from junction to heatsink  
tp = 130 µs; δ = 6%;  
Tj = 110 °C; notes 1 and 2  
0.17  
Notes  
1. See “Mounting recommendations in the General part of handbook SC19a”.  
2. Equivalent thermal impedance under pulsed microwave operating conditions.  
CHARACTERISTICS  
Tmb = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
IEBO  
PARAMETER  
collector cut-off current  
emitter cut-off current  
CONDITIONS  
VCB = 50 V; IE = 0  
VEB = 1.5 V; IC = 0  
MAX.  
UNIT  
30  
mA  
mA  
3
APPLICATION INFORMATION  
Microwave performance up to Tmb = 25 °C in a common base test circuit as shown in Fig.3.  
VCC  
(V)  
note 1  
MODE OF  
OPERATION  
f
PL  
(W)  
Gp  
(dB)  
ηC  
(%)  
CONDITIONS  
(GHz)  
Class C  
tp = 130 µs; δ = 6%; note 2  
1.2 to 1.4  
50  
280  
≥7;  
typ. 8  
≥40;  
typ. 44  
Notes  
1. VCC during pulse.  
2. Operating conditions and performances for other pulse formats can be made available on request.  
1997 Feb 18  
4
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
30 mm  
30 mm  
4
10.5  
7
10  
2
4
1
1
12.5  
0.6  
8
40 mm  
40 mm  
2.5  
2.5  
4
12  
12  
MBC721  
V
C3  
V
CC  
CC  
C4  
C2  
L3  
C6  
L1  
L2  
input  
output  
R1  
C1  
C5  
MBC722  
10.3  
Fig.3 Broadband test circuit.  
5
1997 Feb 18  
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
List of components (see Fig.3)  
COMPONENT  
DESCRIPTION  
VALUE  
DIMENSIONS  
CATALOGUE NO.  
L1, L2, L3  
3 turns 0.65 mm diameter  
copper wire  
int dia. = 4 mm;  
length of turn = 3 mm  
C1  
C2  
C3  
C4  
C5  
C6  
R1  
capacitor  
100 pF  
ATC, ref. 100B101KP50X  
tantalum capacitor  
electrolytic capacitor  
feedthrough bypass capacitor  
variable gigatrim capacitor  
capacitor  
10 µF, 50 V  
470 µF, 63 V  
Erie, ref.1250-003  
Tekelec, ref.729.1  
0.8 - 8 pF  
4.7 nF  
resistor  
4.7 Ω  
The test jig consists of two circuits (input and output), each being 30 mm x 40 mm in size. The two circuits are mounted  
on a 10 mm thick hard aluminium alloy block. A recess should be machined in the aluminium block in which the transistor  
can be mounted. The mounting surface must be lapped to a surface roughness of Ra <0.5 µm and the sum of the depth  
of the recess and the thickness of the circuits should not exceed the specified minimum dimension between mounting  
face and the leads of the transistor. Tolerances on this dimension may be absorbed by placing a gold plated metal shim  
under the leads, close to the body of the transistor.  
MGA261  
MGA260  
10  
50  
handbook, halfpage  
handbook, halfpage  
G
η
p
C
(dB)  
8
(%)  
48  
6
4
46  
44  
2
42  
0
1.1  
40  
1.1  
1.2  
1.3  
1.4  
1.5  
1.2  
1.3  
1.4  
1.5  
f (GHz)  
f (GHz)  
Class C pulse operation; tp = 130 µs; δ = 6%.  
VCC = 50 V; PO = 280 W.  
Class C pulse operation; tp = 130 µs; δ = 6%.  
VCC = 50 V; PO = 280 W.  
Broadband test circuit as shown in Fig.3.  
Broadband test circuit as shown in Fig.3.  
Fig.5 Collector efficiency as a function  
of frequency.  
Fig.4 Power gain as a function of frequency.  
1997 Feb 18  
6
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
1
0.5  
2
1.2 GHz  
1.3 GHz  
Z
i
0.2  
5
1.4 GHz  
10  
+ j  
– j  
0.2  
0.5  
1
2
5
10  
0
∞
10  
5
0.2  
2
0.5  
MBC918  
1
VCC = 50 V; ZO = 5 Ω; PO = 280 W.  
Fig.6 Input impedance as a function of frequency, associated with optimum load impedance.  
1
0.5  
2
0.2  
5
10  
+ j  
– j  
0.2  
0.5  
1
2
5
10  
0
∞
10  
Z
1.3 GHz  
L
5
0.2  
1.2 GHz  
1.4 GHz  
2
0.5  
MBC919  
1
VCC = 50 V; ZO = 5 Ω; PO = 280 W.  
Fig.7 Optimum load impedance as a function of frequency, associated with input impedance.  
7
1997 Feb 18  
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
PACKAGE OUTLINE  
12.85 max  
0.15 max  
6
max  
3.3  
2.9  
1.6 max  
3
23 max  
seating plane  
3.7  
max  
2.7  
min  
1
9.85  
max  
10.3  
10.0  
3.3  
2.7  
min  
2
MBC881  
8.25  
16.5  
Dimensions in mm.  
Torque on nut: max 0.4 Nm.  
Recommended screw: M3.  
Recommended pitch for mounting screw: 19 mm.  
Fig.8 SOT439A.  
1997 Feb 18  
8
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of this specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Feb 18  
9
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
NOTES  
1997 Feb 18  
10  
Philips Semiconductors  
Product specification  
NPN microwave power transistor  
RX1214B350Y  
NOTES  
1997 Feb 18  
11  
Philips Semiconductors – a worldwide company  
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Internet: http://www.semiconductors.philips.com  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA53  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
127147/00/02/pp12  
Date of release: 1997 Feb 18  
Document order number: 9397 750 01737  
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NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.  
PC/PC-peripherals  
Cross reference  
Features  
Models  
Packages  
l Suitable for short and medium pulse applications up to 1 ms/10%  
l Internal input prematching networks allow an easier design of circuits  
l Diffused emitter ballasting resistors improve ruggedness  
l Interdigitated emitter-base structure provides high emitter efficiency  
l Gold metallization with barrier realizes very stable characteristics and excellent lifetime  
l Multicell geometry improves power sharing and reduces thermal resistance.  
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Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for  
medium pulse, heavy duty operation within this band.  
RX1214B350Y  
RX1214B350Y  
Datasheet  
File  
size  
(kB)  
Publication  
release date Datasheet status  
Page  
count  
Type nr.  
Title  
Datasheet  
Download  
RX1214B350Y NPN microwave power transistor  
18-Feb-97  
Product  
12  
91  
Specification  
Products, packages, availability and ordering  
North American  
Partnumber  
Order code  
(12nc)  
Partnumber  
marking/packing  
package device status buy online  
SOT439 Full production  
Standard Marking * Trade  
Pack  
RX1214B350Y RX1214B350Y TRAY  
9340 095 40114  
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