934011880215 [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal;
| 型号： | 934011880215 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTH10
NPN 1 GHz general purpose
switching transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
FEATURES
PINNING
PIN
• Low cost
DESCRIPTION
page
3
• High power gain.
Code: V30
1
2
3
base
DESCRIPTION
emitter
1
2
collector
The PMBTH10 is a general purpose
silicon npn transistor, encapsulated in
a SOT23 plastic envelope. Its pnp
complement is the PMBTH81.
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN. MAX.
UNIT
VCBO
VCEO
VEBO
Ptot
−
30
25
3
V
V
V
collector-emitter voltage
emitter-base voltage
total power dissipation
DC current gain
open base
−
open collector
−
Ts = 45 °C (note 1)
VCE = 10 V; IC = 4 mA
−
400
−
mW
hFE
60
−
Cre
collector-emitter feedback
capacitance
VCB = 10 V; IE = 0; f = 1 MHz
0.7
pF
Crb
fT
collector-base feedback
capacitance
VCB = 10 V; IE = 0; f = 1 MHz
0.35
650
−
0.65
−
pF
transition frequency
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
MHz
ps
rbCc
collector-base time constant
VCE = 10 V; IC = 4 mA;
9
f = 100 MHz; Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
30
V
open base
−
25
V
open collector
−
3
V
−
40
mA
mW
°C
°C
Ptot
Tstg
Tj
Ts = 45 °C (note 1)
−
400
150
150
−65
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
THERMAL RESISTANCE
SYMBOL
Rth j-s
Note
PARAMETER
THERMAL RESISTANCE
from junction to soldering point (note 1)
260 K/W
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
CONDITIONS
open emitter; IC = 100 µA; IE = 0
open base; IC = 1 mA; IB = 0
open collector; IE = 10 µA; IC = 0
IC = 4 mA; IB = 0.4 mA
VCE = 10 V; IC = 4 mA
MIN. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE sat
VBE on
ICBO
30
25
3
−
V
−
V
−
V
−
0.5
0.95
100
100
−
V
−
V
collector-base cut-off current
emitter-base cut-off current
DC current gain
VCB = 25 V; IE = 0
−
nA
nA
IEBO
VCB = 25 V; IC = 0
−
hFE
VCE = 10 V; IC = 4 mA
60
−
Cre
collector-emitter feedback
capacitance
VCB = 10 V; IE = ie = 0;
f = 1 MHz
0.7
pF
Crb
fT
collector-base feedback capacitance
VCB = 10 V; IC = ic = 0;
f = 1 MHz
0.35 0.65 pF
transition frequency
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
650
−
MHz
ps
rbCc
collector-base time constant
VCB = 10 V; IC = 4 mA;
−
9
f = 100 MHz; Tamb = 25 °C
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
MRA168
MRA170
100
−10
handbook, halfpage
handbook, halfpage
Y
b
11
11
(mS)
80
(mS)
−20
g
11
1000 MHz
60
40
−30
−40
−b
11
700
400
200 100
20
0
−50
−60
2
3
10
10
0
20
40
60
80
g
100
(mS)
f (MHz)
11
VCB = 10 V; IC = 4 mA.
VCB = 10 V; IC = 4 mA.
Fig.2 Common base input admittance (Y11) as a
function of frequency.
Fig.3 Common base input admittance (Y11).
MRA169
MRA171
70
60
handbook, halfpage
handbook, halfpage
b
Y
200
400
21
21
(mS)
(mS)
50
b
21
600
700
100
50
30
10
40
30
−g
21
1000 MHz
−10
−30
20
10
2
3
10
10
−70
−50
−30
−10
10
g
30
(mS)
f (MHz)
21
VCB = 10 V; IC = 4 mA.
VCB = 10 V; IC = 4 mA.
Fig.4 Common base forward transfer admittance
(Y21) as a function of frequency.
Fig.5 Common base forward transfer admittance
(Y21).
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
MRA164
MRA166
5
0
handbook, halfpage
handbook, halfpage
b
Y
12
(mS)
100
200
12
(mS)
4
−1
400
3
2
−2
−3
700
1000 MHz
−b
12
1
0
−4
g
12
−5
−2
2
3
10
10
−1.2
−0.4
0.4
1.2
g
2
(mS)
f (MHz)
12
VCB = 10 V; IC = 4 mA.
VCB = 10 V; IC = 4 mA.
Fig.6 Common base reverse transfer admittance
(Y12) as a function of frequency.
Fig.7 Common base reverse transfer admittance
(Y12).
MRA165
MRA167
10
10
handbook, halfpage
handbook, halfpage
1000 MHz
b
Y
22
22
(mS)
(mS)
8
8
700 MHz
6
6
b
22
4
2
4
400 MHz
200 MHz
100 MHz
2
0
g
22
0
10
2
3
10
0
2
4
6
8
10
(mS)
f (MHz)
g
22
VCB = 10 V; IC = 4 mA.
VCB = 10 V; IC = 4 mA.
Fig.8 Common base reverse admittance (Y22) as
a function of frequency.
Fig.9 Common base reverse admittance (Y22).
September 1995
5
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
September 1995
6
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
7
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