934021740135 [NXP]
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, SMD, SC-70, CMPAK-3, BIP General Purpose Small Signal;
| 型号： | 934021740135 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, SMD, SC-70, CMPAK-3, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC846W; BC847W; BC848W
NPN general purpose transistors
Product specification
2002 Feb 04
Supersedes data of 1999 Apr 23
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
PIN
DESCRIPTION
1
2
3
base
emitter
collector
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC856W, BC857W and BC858W.
3
handbook, halfpage
3
2
MARKING
1
TYPE NUMBER
BC846W
MARKING CODE(1)
1D*
1A*
1B*
1H*
1E*
1F*
1G*
1M*
1
2
BC846AW
BC846BW
BC847W
Top view
MAM062
BC847AW
BC847BW
BC847CW
BC848W
Fig.1 Simplified outline (SOT323; SC70) and
symbol.
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
BC846W
−
−
−
80
V
V
V
BC847W
50
30
BC848W
VCEO
collector-emitter voltage
BC846W
open base
−
−
−
65
45
30
V
V
V
BC847W
BC848W
VEBO
emitter-base voltage
BC846W; BC847W
BC848W
open collector
−
−
−
−
−
−
6
V
V
5
IC
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
100
200
200
200
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to
ambient
in free air; note 1
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
collector-base cut-off current
VCB = 30 V; IE = 0
−
−
−
15
5
nA
V
CB = 30 V; IE = 0;
−
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = 5 V; IC = 0
IC = 10 µA; VCE = 5 V
−
−
100
nA
BC846AW; BC847AW
BC846BW; BC847BW; BC848BW
BC847CW
−
−
−
90
−
−
−
150
270
DC current gain
IC = 2 mA; VCE = 5 V
BC846W
110
110
110
200
420
−
−
450
800
220
450
800
250
600
BC847W; BC848W
BC846AW; BC847AW
BC846BW; BC847BW
BC847CW
−
180
290
520
90
VCEsat
VBEsat
VBE
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
mV
mV
IC = 100 mA; IB = 5 mA;
note 1
−
200
base-emitter saturation voltage
base-emitter voltage
IC = 10 mA; IB = 0.5 mA
−
−
700
900
−
−
mV
mV
IC = 100 mA; IB = 5 mA;
note 1
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
580
−
660
−
700
770
3
mV
mV
pF
Cc
fT
collector capacitance
transition frequency
noise figure
VCB = 10 V; IE = Ie = 0;
f = 1 MHz
−
−
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
−
−
−
MHz
dB
F
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−
10
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
MGT723
MGT724
400
1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
1000
(1)
300
(1)
(2)
800
600
400
200
0
(2)
200
(3)
(3)
100
0
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
BC847AW; VCE = 5 V.
(1) Tamb = 150 °C.
BC847AW; VCE = 5 V.
(1) Tamb = −55 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MGT725
MGT726
3
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
1000
(mV)
(1)
800
(2)
2
10
600
(1)
(2)
(3)
400
200
0
(3)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
BC847AW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC847AW; IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
5
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
MGT727
MGT728
600
1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
(1)
500
1000
(1)
(2)
400
800
600
400
200
0
(2)
300
(3)
200
(3)
100
0
10
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
BC847BW; VCE = 5 V.
(1) Tamb = 150 °C.
BC847BW; VCE = 5 V.
(1) Tamb = −55 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.6 DC current gain as a function of collector
current; typical values.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
MGT729
MGT730
4
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
1000
(mV)
(1)
3
10
800
(2)
600
(3)
2
400
200
0
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
BC847BW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC847BW; IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
MGT731
MGT732
1200
1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
1000
(1)
1000
(1)
(2)
800
800
600
400
200
0
(2)
600
(3)
400
(3)
200
0
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
BC847CW; VCE = 5 V.
(1) Tamb = 150 °C.
BC847CW; VCE = 5 V.
(1) Tamb = −55 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
MGT733
MGT734
4
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
1000
(mV)
(1)
3
10
800
(2)
600
(3)
2
10
400
(1)
200
0
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
BC847CW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
BC847CW; IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
7
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
2002 Feb 04
8
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 04
9
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
NOTES
2002 Feb 04
10
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
NOTES
2002 Feb 04
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp12
Date of release: 2002 Feb 04
Document order number: 9397 750 09166
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