934033830135 [NXP]

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor;


型号：	934033830135
厂家：	NXP
描述：	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, Transient Suppressor 电视
文件：	总11页 (文件大小：74K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage

M3D168

BZG04 series

Transient voltage suppressor

diodes

1996 Sep 19

Preliminary speciﬁcation

Supersedes data of 1996 Jun 10

Philips Semiconductors

Preliminary speciﬁcation

Transient voltage suppressor diodes

BZG04 series

The well-defined void-free case is of a

transfer-moulded thermo-setting

plastic.

FEATURES

DESCRIPTION

• Glass passivated

DO-214AC surface mountable

package with glass passivated chip.

• High maximum operating

temperature

• Low leakage current

• Excellent stability

cathode

band

handbook, 4 columns

• UL 94V-O classified plastic

package

• Transient suppressor stand-off

voltage range:

8.2 to 220 V for 32 types

Top view

Side view

MSA473

• Shipped in 12 mm embossed tape.

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

P_RSM

non-repetitive peak reverse power 10/1000 µs exponential pulse

−

300

dissipation

(see Fig.4); T_j= 25 °C prior to

surge; see also Fig.2

T_stg

T_j

storage temperature

junction temperature

−65

+175

°C

1996 Sep 19

Philips Semiconductors

Preliminary speciﬁcation

Transient voltage suppressor diodes

BZG04 series

ELECTRICAL CHARACTERISTICS

Total series

T_j= 25 °C unless otherwise specified.

SYMBOL

V_F

PARAMETER

forward voltage

CONDITIONS

I_F= 0.5 A; see Fig.3

MIN.

MAX.

UNIT

−

1.2

Per type

T_j= 25 °C unless otherwise specified.

REVERSE

BREAKDOWN

VOLTAGE

REVERSE CURRENT

at STAND-OFF

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

TYPE

NUMBER

_(BR)R(V)

at I_test

S_Z(%/K) at I_test

V_(CL)R(V)

MAX.

I_R(µA)

I_test

(mA)

at I_RSM(A)

note 1

at V_R

(V)

MIN.

MAX.

BZG04-8V2

BZG04-9V1

BZG04-10

BZG04-11

BZG04-12

BZG04-13

BZG04-15

BZG04-16

BZG04-18

BZG04-20

BZG04-22

BZG04-24

BZG04-27

BZG04-30

BZG04-33

BZG04-36

BZG04-39

BZG04-43

BZG04-47

BZG04-51

BZG04-56

BZG04-62

BZG04-68

BZG04-75

BZG04-82

BZG04-91

BZG04-100

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

0.13

14.8

15.7

17.0

18.9

20.9

22.9

25.6

28.4

31.0

33.8

38.1

42.2

46.2

50.1

54.1

60.7

65.5

70.8

78.6

86.5

94.4

103.5

114

20.3

19.1

17.7

15.9

14.4

13.1

11.7

10.6

9.7

8.2

9.1

100

8.9

7.9

7.1

6.5

6.0

5.5

4.9

4.6

4.2

3.8

3.5

3.2

2.9

2.6

126

2.4

139

2.2

104

114

152

2.0

167

1.8

1996 Sep 19

Philips Semiconductors

Preliminary speciﬁcation

Transient voltage suppressor diodes

BZG04 series

REVERSE

TEMPERATURE

BREAKDOWN

COEFFICIENT

VOLTAGE

REVERSE CURRENT

at STAND-OFF

VOLTAGE

TEST

CURRENT

CLAMPING

VOLTAGE

TYPE

NUMBER

V_(BR)R(V)

at I_test

S_Z(%/K) at I_test

V_(CL)R(V)

I_R(µA)

I_test

(mA)

at I_RSM(A)

note 1

at V_R

(V)

MIN.

124

138

153

168

188

208

228

251

MIN.

0.09

MAX.

0.13

MAX.

185

204

224

249

276

305

336

380

MAX.

1.6

1.5

1.3

1.2

1.1

1.0

0.9

0.8

110

120

130

150

160

180

200

220

BZG04-110

BZG04-120

BZG04-130

BZG04-150

BZG04-160

BZG04-180

BZG04-200

BZG04-220

Note

1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

K/W

R_{th j-tp}

R_{th j-a}

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

note 1

note 2

100

150

Notes

1. Device mounted on an Al₂O₃printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.5.

2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.5.

For more information please refer to the “General Part of associated Handbook”.

1996 Sep 19

Philips Semiconductors

Preliminary speciﬁcation

Transient voltage suppressor diodes

BZG04 series

GRAPHICAL DATA

MBH452

MBH453

handbook, halfpage

ZSM

(A)

(W)

−2

−1

t (ms) 10

V (V)

T_j= 25 °C prior to surge.

T_j= 25 °C.

Fig.2 Maximum non-repetitive peak reverse

power dissipation as a function of pulse

duration (square pulse).

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

RSM

(%)

100

4.5

2.5

1.25

MSB213

MGD521

In accordance with “IEC 60-1, Section 8”.

t₁= 10 µs.

t₂= 1000 µs.

Dimensions in mm.

Fig.4 Non-repetitive peak reverse current pulse

definition.

Fig.5 Printed-circuit board for surface mounting.

1996 Sep 19

Philips Semiconductors

Preliminary speciﬁcation

Transient voltage suppressor diodes

BZG04 series

PACKAGE OUTLINE

5.5

5.1

4.5

4.3

handbook, full pagewidth

2.3

2.0

0.05

0.2

3.3

2.7

MSA414

2.8 1.6

2.4 1.4

Dimensions in mm.

The marking band indicates the cathode.

Fig.6 DO-214AC; SOD106.

1996 Sep 19

Philips Semiconductors

Preliminary speciﬁcation

Transient voltage suppressor diodes

BZG04 series

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Sep 19

Go to Philips Semiconductors' home page

Select & Go...

Catalog

& Datasheets

Information as of 2000-08-22

Catalog by Function

Discrete semiconductors

Audio

BZG04 series; Transient voltage suppressor diodes

Clocks and Watches

Data communications

Microcontrollers

Peripherals

Standard analog

Video

to eNews

• Description

• Features

• Datasheet

• Products, packages, availability and ordering

• Find similar products

To be kept informed on BZG04 series,

subscribe to eNews.

•

Wired communications

Wireless communications

Description

Catalog by System

Automotive

Consumer Multimedia

Systems

DO-214AC surface mountable package with glass passivated chip.

Communications

PC/PC-peripherals

The well-defined void-free case is of a transfer-moulded thermo-setting plastic.

Cross reference

Models

Features

Packages

Application notes

Selection guides

934033830135 [NXP]

相关型号：

934033870135

934033880135

934033890135

934033910135

934033930135

934033940115

934033950135

934033960135

934033970135

934034010135

934034040135

934034050135