934051370115 [NXP]
DIODE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode;
| 型号： | 934051370115 |
| 厂家： | 
NXP |
| 描述： | DIODE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode |
| 文件： | 总8页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BAT140 series
Schottky barrier double diodes
1997 Oct 03
Product specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
FEATURES
PINNING
PIN
• Low switching losses
BAT140
C
4
• Capability of absorbing very high
page
page
page
A
S
surge current
1
2
3
4
k1
n.c.
a1
n.c.
a1
n.c.
1
3
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
MGL171
2 n.c.
k2
a2
k2
a1, a2
k1, k2
k1, a2
Fig.2 BAT140A diode
configuration (symbol).
APPLICATIONS
• Low power switched-mode power
supplies
age
4
• Rectification
4
• Polarity protection.
1
3
DESCRIPTION
MGL172
2 n.c.
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package.
1
2
3
Fig.3 BAT140C diode
configuration (symbol).
MSB002 - 1
Top view
MARKING
MARKING
TYPE NUMBER
CODE
4
Fig.1 Simplified outline
BAT140A
BAT140C
BAT140S
AT140A
AT140C
AT140S
1
3
(SOT223) and pin
configuration.
MGL173
2 n.c.
Fig.4 BAT140S diode
configuration (symbol).
1997 Oct 03
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
continuous forward current
average forward current
40
V
A
A
−
−
−
IF
1
1
IF(AV)
Tamb = 65 °C;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
IFSM
non-repetitive peak forward current t = 8.3 µs half sinewave;
10
A
A
−
−
JEDEC method
IRSM
Tstg
Tj
non-repetitive peak reverse current tp = 100 µs
storage temperature
0.5
+150
125
°C
°C
−65
junction temperature
−
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.5
IF = 100 mA; note 1
280
330
mV
IF = 1 A; note 1
460
15
500
40
mV
µA
µA
pF
IR
reverse current
VR = 10 V; note 1; see Fig.6
VR = 40 V; note 1; see Fig.6
VR = 4 V; f = 1 MHz; see Fig.7
60
300
80
Cd
diode capacitance
65
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
100
UNIT
Rth j-a
K/W
Note
1. Refer to SOT223 standard mounting conditions.
1997 Oct 03
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
GRAPHICAL DATA
MLC388
MLC389
4
10
4
10
handbook, halfpage
handbook, halfpage
(1)
I
I
F
R
(mA)
(µA)
(2)
(3)
3
3
10
10
(1)
2
10
2
10
(2)
(3)
(4)
(4)
10
1
10
1
0
0
0.2
0.4
0.6
0.8
1.0
10
20
30
40
V
(V)
R
V
(V)
F
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.5 Forward current as a function of forward
voltage; typical values.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
MLC390
3
10
handbook, halfpage
C
d
(pF)
2
10
10
0
8
16
24
32
40
V
(V)
R
f = 1 MHz.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
1997 Oct 03
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
96-11-11
97-02-28
SOT223
1997 Oct 03
5
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 03
6
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT140 series
NOTES
1997 Oct 03
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117027/1200/01/pp8
Date of release: 1997 Oct 03
Document order number: 9397 750 02929
相关型号：
934051380115
DIODE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode
NXP
934051390115
DIODE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode
NXP
934051560115
TRANSISTOR 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, SC-70, CMPAK-3, BIP General Purpose Small Signal
NXP
934051590145
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, EMT3, SMD, SC-75, SMPAK-3, BIP General Purpose Small Signal
NXP
934051610145
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, EMT3, SMD, SC-75, SMPAK-3, BIP General Purpose Small Signal
NXP
934051610185
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, EMT3, SMD, SC-75, SMPAK-3, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明