934055239115 [NXP]
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal;
| 型号： | 934055239115 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PUMD10
NPN/PNP resistor-equipped
transistors
Product specification
2001 Feb 16
Supersedes data of 1999 May 20
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
FEATURES
6
5
4
handbook, halfpage
• Transistors with different polarity
and built-in bias resistors
6
5
2
4
3
R1 R2
– TR1 (NPN):
TR2
R1 = 2.2 kΩ; R2 = 47 kΩ
TR1
– TR2 (PNP):
R2 R1
R1 = 2.2 kΩ; R2 = 47 kΩ
1
• No mutual interference between
the transistors
Top view
MAM343
1
2
3
• Simplification of circuit design
Fig.1 Simplified outline (SC-88) and symbol.
• Reduces number of components
and board space.
PINNING
APPLICATIONS
PIN
DESCRIPTION
1, 4 emitter
2, 5 base
6, 3 collector
TR1; TR2
TR1; TR2
TR1; TR2
• Especially suitable for space
reduction in portable equipment
2, 5
6, 3
• Inverter circuit configurations
without use of external resistors.
1, 4
MBK120
MARKING
DESCRIPTION
MARKING
CODE
TYPE NUMBER
Fig.2 Equivalent inverter
symbol.
NPN/PNP resistor-equipped
transistors in an SC-88 (SOT363)
plastic package.
PUMD10
Dt0
2001 Feb 16
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
open base
−
−
−
50
V
V
V
50
10
open collector
positive
−
−
−
−
−
+12
−5
V
V
negative
IO
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
100
100
200
+150
150
+150
mA
mA
mW
°C
ICM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Refer to SC-88 standard mounting conditions.
2001 Feb 16
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
416
K/W
Note
1. Refer to SC-88 standard mounting conditions.
CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
Per transistor; for the PNP transistor with negative polarity
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
ICEO
collector cut-off current
collector cut-off current
IC = 0; VCB = 50 V
−
−
−
−
−
100
1
nA
IB = 0; VCE = 30 V
−
µA
µA
µA
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
−
50
IEBO
hFE
emitter cut-off current
DC current gain
−
180
−
IC = 10 mA; VCE = 5 V
100
−
−
VCEsat
Vi(off)
Vi(on)
R1
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA
−
100
0.5
−
mV
V
input-off voltage
input-on voltage
input resistor
IC = 100 µA; VCE = 5 V
−
0.6
0.75
2.2
IC = 5 mA; VCE = 0.3 V
1.1
1.54
V
2.86
kΩ
R2
-------
R1
resistor ratio
17
21
26
Cc
collector capacitance
TR1 (NPN)
IE = ie = 0; VCB = 10 V;
f = 1 MHz
−
−
−
−
2.5
3
pF
pF
TR2 (PNP)
2001 Feb 16
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
MGR769
MGR768
3
3
10
10
handbook, halfpage
handbook, halfpage
(1)
h
FE
V
(2)
(3)
CEsat
(mV)
2
10
2
10
(1)
(2)
(3)
10
1
10
10
10
−1
2
−1
2
1
10
10
1
10
10
I
(mA)
I
(mA)
C
C
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
TR1 (NPN); VCE = 5 V.
(1) Tamb = 100 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −40 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
MGR771
MGR770
2
10
10
handbook, halfpage
handbook, halfpage
V
i(on)
V
(V)
i(off)
(V)
10
1
(1)
(2)
(1)
1
(3)
(3)
(2)
−1
−1
10
10
−2
−1
−1
2
10
10
1
10
10
1
10
10
I
(mA)
I
(mA)
C
C
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = 100 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
Fig.6 Input-on voltage as a function of collector
current; typical values.
2001 Feb 16
5
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
MGR765
MGR764
3
3
10
−10
handbook, halfpage
handbook, halfpage
(1)
h
FE
V
CEsat
(2)
(mV)
(3)
2
10
2
−10
(1)
10
(2)
(3)
1
−10
−10
−10
−1
2
−1
2
−1
−10
−10
−1
−10
−10
I
(mA)
I
(mA)
C
C
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
TR2 (PNP); VCE = −5 V.
(1) Tamb = 100 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = −40 °C.
(3) Tamb = −40 °C.
Fig.7 DC current gain as a function of collector
current; typical values.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
MGR767
MGR766
4
4
−10
−10
handbook, halfpage
handbook, halfpage
V
V
i(off)
i(on)
(mV)
(mV)
3
3
−10
−10
(1)
(1)
(2)
(2)
(3)
(3)
2
2
−10
−10
−2
−1
−1
2
−10
−10
−1
−10
−10
−1
−10
−10
I
(mA)
I
(mA)
C
C
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2)
Tamb = 25 °C.
(2)
Tamb = 25 °C.
(3) Tamb = 100 °C.
(3) Tamb = 100 °C.
Fig.9 Input-off voltage as a function of collector
current; typical values.
Fig.10 Input-on voltage as a function of collector
current; typical values.
2001 Feb 16
6
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2001 Feb 16
7
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.
Philips Semiconductors customers using or selling these
products for use in such applications do so at their own
risk and agree to fully indemnify Philips Semiconductors
for any damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in
the Characteristics sections of the specification is not
implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or
title under any patent, copyright, or mask work right to
these products, and makes no representations or
warranties that these products are free from patent,
copyright, or mask work right infringement, unless
otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will
be suitable for the specified use without further testing or
modification.
2001 Feb 16
8
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
NOTES
2001 Feb 16
9
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
NOTES
2001 Feb 16
10
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
NOTES
2001 Feb 16
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: Philips Hungary Ltd., H-1119 Budapest, Fehervari ut 84/A,
Tel: +36 1 382 1700, Fax: +36 1 382 1800
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
Tel. +39 039 203 6838, Fax +39 039 203 6800
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
71
SCA
© Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp12
Date of release: 2001 Feb 16
Document order number: 9397 750 08011
相关型号：
934055239125
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
934055239135
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN
NXP
934055293135
DIODE 1.9 A, 200 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS, SMD, LLDL, 2 PIN, Rectifier Diode
NXP
934055295135
DIODE 1.6 A, 600 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS, SMD, LLDL, 2 PIN, Rectifier Diode
NXP
©2020 ICPDF网 联系我们和版权申明