934055322127 [NXP]
600V, 12A, TRIAC, TO-220AB, PLASTIC, SC-46, 3 PIN;型号: | 934055322127 |
厂家: | NXP |
描述: | 600V, 12A, TRIAC, TO-220AB, PLASTIC, SC-46, 3 PIN 局域网 三端双向交流开关 |
文件: | 总6页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivatedguaranteedcommutationtriacsin
a plastic envelope intended for use in motor
control circuits or with other highly inductive
loads. These devices balance the
requirements of commutation performance
and gate sensitivity. The "sensitive gate" E
series and "logic level" D series are intended
for interfacing with low power drivers,
including micro controllers.
SYMBOL
PARAMETER
MAX. UNIT
BTA212-
BTA212-
BTA212-
600D
600E
600F
VDRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600
V
IT(RMS)
ITSM
12
95
A
A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
tab
main terminal 1
main terminal 2
gate
T2
T1
2
3
G
1 2 3
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
6001
12
UNIT
V
VDRM
Repetitive peak off-state
voltages
-
-
IT(RMS)
ITSM
RMS on-state current
full sine wave;
A
Tmb ≤ 99 ˚C
Non-repetitive peak
on-state current
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
-
-
-
95
105
45
A
A
t = 16.7 ms
I2t
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
t = 10 ms
A2s
A/µs
dIT/dt
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
100
IGM
PGM
PG(AV)
-
-
-
2
5
0.5
A
W
W
over any 20 ms
period
Tstg
Tj
Storage temperature
Operating junction
temperature
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
60
1.5
2.0
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
...E
UNIT
BTA212-
...D
...F
IGT
Gate trigger current2
Latching current
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
T2+ G-
T2- G-
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
-
-
-
15
25
25
20
30
30
25
40
40
mA
mA
mA
T2+ G-
T2- G-
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
15
25
30
mA
VT
On-state voltage
IT = 17 A
-
-
1.6
1.5
-
V
V
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current
VD = VDRM(max); Tj = 125 ˚C
-
0.5
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
BTA212-
MIN.
...E
60
MAX. UNIT
...D
...F
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max)
;
30
70
-
-
V/µs
Tj = 110 ˚C; exponential
waveform; gate open
circuit
dIcom/dt
Critical rate of change of
commutating current
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 20v/µs; gate
open circuit
1.2
3.5
16
5
A/ms
dIcom/dt
Critical rate of change of
commutating current
VDM = 400 V; Tj = 125 ˚C;
IT(RMS) = 12 A;
dVcom/dt = 0.1v/µs; gate
open circuit
4.3
19
-
A/ms
2 Device does not trigger in the T2-, G+ quadrant.
April 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
Tmb(max) / C
IT(RMS) / A
Ptot / W
20
95
15
10
5
= 180
120
99 C
1
102.5
110
15
90
60
10
5
30
117.5
125
0
0
-50
0
50
Tmb / C
100
150
0
5
10
15
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
ITSM / A
1000
IT(RMS) / A
25
20
15
10
5
dIT/dt limit
100
I
TSM
time
I
T
T
Tj initial = 25 C max
10ms 100ms
10
10us
0
100us
1ms
T / s
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A
100
VGT(Tj)
VGT(25 C)
1.6
I
TSM
time
I
T
80
60
40
20
0
1.4
1.2
1
T
Tj initial = 25 C max
0.8
0.6
0.4
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
April 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
IT / A
IGT(Tj)
IGT(25°C)
40
30
20
10
0
Tj = 125 C
Tj = 25 C
typ
3
2.5
2
T2+ G+
T2+ G-
T2- G-
max
Vo = 1.175 V
Rs = 0.0316 Ohms
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
-50
0
50
Tj/°C
100
150
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
3
2.5
2
1
unidirectional
bidirectional
0.1
1.5
1
t
P
p
D
0.01
t
0.5
0
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
versus junction temperature Tj.
dIcom/dt (A/ms)
IH(Tj)
IH(25C)
100
F TYPE
E TYPE
D TYPE
3
2.5
2
10
1.5
1
0.5
0
1
60
20
80
40
120
100
140
-50
0
50
100
150
Tj / C
Tj/˚C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Minimum Typical, critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt =20V/µs.
versus junction temperature Tj.
April 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
April 2002
5
Rev 2.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212 series D, E and F
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS3
PRODUCT
STATUS4
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design.
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
April 2002
6
Rev 2.000
相关型号:
934055335115
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
NXP
934055339115
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
NXP
934055340115
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
NXP
934055351118
TRANSISTOR 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
934055354115
DIODE 0.2 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC, SMD, SC-89, 3 PIN, Signal Diode
NXP
934055355115
DIODE 0.2 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC, SMD, SC-89, 3 PIN, Signal Diode
NXP
934055359115
DIODE 3.3 V, 0.22 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SMD, SMT3, SC-69, MPAK-3, Voltage Regulator Diode
NXP
934055360115
DIODE 5.1 V, 0.22 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SMD, SMT3, SC-69, MPAK-3, Voltage Regulator Diode
NXP
934055364115
DIODE 12 V, 0.22 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SMD, SMT3, SC-69, MPAK-3, Voltage Regulator Diode
NXP
©2020 ICPDF网 联系我们和版权申明