934055857135 [NXP]
2.7V, 0.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SMD, SC-79, 2 PIN;型号: | 934055857135 |
厂家: | NXP |
描述: | 2.7V, 0.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SMD, SC-79, 2 PIN 测试 光电二极管 |
文件: | 总12页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZX585 series
Voltage regulator diodes
Product specification
2000 Oct 20
Supersedes data of 2000 Jun 06
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
FEATURES
PINNING
PIN
• Total power dissipation: max. 300 mW
DESCRIPTION
• Two tolerance series: ±2% and ±5%
1
2
cathode
anode
• Working voltage range: nom. 2.4 to 15 V (E24 range).
APPLICATIONS
• General regulation functions.
handbook, halfpage
1
2
DESCRIPTION
Low-power voltage regulator diodes in a small plastic SMD
SOD523 package. The diodes are available in the
normalized E24 ±2% (BZX585-B) and ±5% (BZX585-C)
tolerance range. The series consists of 20 types with
nominal working voltages from 2.4 to 15 V.
Top view
MAM387
Fig.1 Simplified outline (SOD523) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZX585-B2V4
BZX585-B2V7
BZX585-B3V0
BZX585-B3V3
BZX585-B3V6
BZX585-B3V9
BZX585-B4V3
BZX585-B4V7
BZX585-B5V1
BZX585-B5V6
C1
C2
C3
C4
C5
C6
C7
C8
C9
C0
BZX585-B6V2
BZX585-B6V8
BZX585-B7V5
BZX585-B8V2
BZX585-B9V1
BZX585-B10
BZX585-B11
BZX585-B12
BZX585-B13
BZX585-B15
E1
E2
E3
E4
E5
E6
E7
E8
E9
E0
BZX585-C2V4
BZX585-C2V7
BZX585-C3V0
BZX585-C3V3
BZX585-C3V6
BZX585-C3V9
BZX585-C4V3
BZX585-C4V7
BZX585-C5V1
BZX585-C5V6
F1
F2
F3
F4
F5
F6
F7
F8
F9
F0
BZX585-C6V2
BZX585-C6V8
BZX585-C7V5
BZX585-C8V2
BZX585-C9V1
BZX585-C10
BZX585-C11
BZX585-C12
BZX585-C13
BZX585-C15
H1
H2
H3
H4
H5
H6
H7
H8
H9
H0
2000 Oct 20
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
200
see Table 1
UNIT
mA
IF
continuous forward current
−
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
300
+150
150
mW
°C
−65
−
°C
Note
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
ELECTRICAL CHARACTERISTICS
Total BZX585-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IR
IF = 10 mA; see Fig.2
0.9
V
reverse current
BZX585-B/C2V4
BZX585-B/C2V7
BZX585-B/C3V0
BZX585-B/C3V3
BZX585-B/C3V6
BZX585-B/C3V9
BZX585-B/C4V3
BZX585-B/C4V7
BZX585-B/C5V1
BZX585-B/C5V6
BZX585-B/C6V2
BZX585-B/C6V8
BZX585-B/C7V5
BZX585-B/C8V2
BZX585-B/C9V1
BZX585-B/C10
BZX585-B/C11
BZX585-B/C12
BZX585-B/C13
BZX585-B/C15
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 10.5V
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
2000 Oct 20
3
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Table 1 Per type BZX585-B/C2V4 to B/C15
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
DIFFERENTIAL RESISTANCE
VZ (V)
at IZtest = 5 mA
rdif (Ω)
BZX585-
B or C
XXX
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA
TYP. MAX.
275 400
at IZtest = 5 mA
TYP. MAX.
70 100
MIN. MAX. MIN. MAX.
TYP.
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
MAX.
MAX.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
450
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
300
325
350
375
400
410
425
400
80
450
500
500
500
500
600
500
480
400
150
80
75
80
85
85
85
80
50
40
15
6
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
40
2.2
30
6
3.0
15
80
2
3.6
20
80
2
4.3
20
100
150
150
150
170
200
2
5.2
10.20 9.50
10.50 20
2
6.0
11
10.78 11.22 10.45 11.55 25
11.76 12.24 11.40 12.60 25
12.74 13.26 12.35 13.65 25
14.70 15.30 14.25 15.75 25
2
6.9
12
2
7.9
13
2
8.8
15
3
10.7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
350
65
K/W
K/W
Notes
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab.
2. Solder point at cathode tab.
2000 Oct 20
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
GRAPHICAL DATA
MBG781
MLD444
300
0.5
handbook, halfpage
handbook, halfpage
S
Z
I
F
(mV/K)
0
4V7
(mA)
4V3
200
−0.5
2V4
2V7
3V9
3V6
−1
−1.5
−2
100
3V3
3V0
0
0.6
−1
2
0.8
1.0
10
1
10
10
V
(V)
F
I
(mA)
Z
BZX585-B/C2V4 to B/C4V7.
Tj = 25 °C.
Tj = 25 to 150 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Temperature coefficient as a function of
working current; typical values.
MLD445
12
handbook, halfpage
15
S
Z
(mV/K)
13
12
8
11
10
9V1
8V2
4
0
7V5
6V8
6V2
5V6
5V1
−4
10
−1
2
1
10
10
I
(mA)
Z
BZX585-B/C5V1 to B/C15.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
2000 Oct 20
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.35
0.25
0.2
0.1
0.7
0.5
1.3
1.1
0.9
0.7
1.7
1.5
mm
0.15
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-11-25
SOD523
SC-79
2000 Oct 20
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Oct 20
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
NOTES
2000 Oct 20
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
NOTES
2000 Oct 20
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX585 series
NOTES
2000 Oct 20
11
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Date of release: 2000 Oct 20
Document order number: 9397 750 07374
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