934056026127 [NXP]

37A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN;


型号：	934056026127
厂家：	NXP
描述：	37A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN 局域网开关脉冲晶体管
文件：	总8页 (文件大小：91K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

Standard level field-effect power

transistor in a plastic envelope using

’trench’ technology which features

very low on-state resistance. It is

intended for use in automotive and

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

P_tot

T_j

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

100

138

175

˚C

mΩ

general

purpose

switching

R_DS(ON)

applications.

resistance

V_GS= 5 V

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

gate

drain

source

tab drain

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

I_DM

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

100

149

138

175

˚C

R_GS= 20 kΩ

T_mb= 25 ˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage & operating temperature

P_tot

T_stg, T_j

- 55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-mb}

Thermal resistance junction to

mounting base

1.1

K/W

R_{th j-a}

Thermal resistance junction to

ambient

in free air

K/W

December 1999

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

STATIC CHARACTERISTICS

T_j= 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_(BR)DSS

V_GS(TO)

Drain-source breakdown

voltage

Gate threshold voltage

V_GS= 0 V; I_D= 0.25 mA;

100

0.05

µA

mΩ

T_j= -55˚C

V_DS= V_GS; I_D= 1 mA

T_j= 175˚C

T_j= -55˚C

4.4

500

100

108

I_DSS

Zero gate voltage drain current V_DS= 100 V; V_GS= 0 V;

T_j= 175˚C

I_GSS

R_DS(ON)

Gate source leakage current

Drain-source on-state

resistance

V_GS= ±20 V; V_DS= 0 V

V_GS= 10 V; I_D= 40 A

DYNAMIC CHARACTERISTICS

T_mb= 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Feedback capacitance

V_GS= 0 V; V_DS= 25 V; f = 1 MHz

1720 2293

216

133

259

182

t_{d on}

t_r

t_{d off}

t_f

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V_DD= 30 V; R_load=1.2Ω;

V_GS= 5 V; R_G= 10 Ω

L_d

L_s

Internal drain inductance

Internal source inductance

Measured from contact screw on

tab to centre of die

Measured from drain lead 6 mm

from package to centre of die

Measured from source lead 6 mm

from package to source bond pad

3.5

4.5

7.5

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T_j= 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_DR

Continuous reverse drain

current

I_DRM

V_SD

Pulsed reverse drain current

Diode forward voltage

149

1.2

I_F= 25 A; V_GS= 0 V

I_F= 37 A; V_GS= 0 V

0.85

1.1

t_rr

Q_rr

Reverse recovery time

Reverse recovery charge

I_F= 37 A; -dI_F/dt = 100 A/µs;

V_GS= -10 V; V_R= 30 V

0.24

µC

December 1999

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

W_DSS

Drain-source non-repetitive

unclamped inductive turn-off

energy

I_D= 26 A; V_DD≤ 25 V;

V_GS= 5 V; R_GS= 50 Ω; T_mb= 25 ˚C

Normalised Power Derating

1000

PD%

120

110

100

ID/A

RDS(ON)=VDS/ID

tp =

1us

100

10us

100us

1ms

10ms

100ms

100

Tmb /

100 120 140 160 180

1000

VDS/V

Fig.1. Normalised power dissipation.

PD% = 100 P_D/P_{D 25 ˚C}= f(T_mb)

Fig.3. Safe operating area

I_D& I_DM= f(V_DS); I_DMsingle pulse; parameter t_p

Normalised Current Derating

ID%

120

110

100

Zth/(K/W)

0.5

0.2

0.1

0.01

0.1

0.05

0.02

0.001

1E-07

1E-05

1E-03

1E-01

1E+01

100 120 140 160 180

t/s

Tmb /

Fig.2. Normalised continuous drain current.

Fig.4. Transient thermal impedance.

Z_{th j-mb}= f(t); parameter D = t_p/T

ID% = 100 I_D/I_{D 25 ˚C}= f(T_mb); V_GS≥ 10 V

1 For maximum permissible repetive avalanche current see fig.18.

December 1999

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

Drain Current, ID (A)

Drain current, ID (A)

VDS > ID X RDS(ON)

VGS = 10V

Tj = 25 C

8 V

6 V

Tj = 25 C

175 C

5.4 V

5.2 V

5 V

4.8 V

4.4 V

4.6 V

1.6

0.2

0.4

0.6

0.8

1.2

1.4

1.8

Gate-source voltage, VGS (V)

Drain-Source Voltage, VDS (V)

Fig.5. Typical output characteristics, T_j= 25 ˚C.

Fig.8. Typical transfer characteristics.

I_D= f(V_GS)

I_D= f(V_DS)

gfs/S

Drain-Source On Resistance, RDS(on) (Ohms)

0.1

5 V

5.2 V

5.4 V

Tj = 25 C

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

4.8 V

8 V

VGS = 10V

ID/A

Drain Current, ID (A)

Fig.6. Typical on-state resistance, T_j= 25 ˚C.

Fig.9. Typical transconductance, T_j= 25 ˚C.

R_DS(ON)= f(I_D)

g_fs= f(I_D)

Rds(on) normalised to 25degC

2.5

1.5

0.5

-100

-50

100

150

200

VGS/V

Tmb / degC

Fig.7. Typical on-state resistance, T_j= 25 ˚C.

Fig.10. Normalised drain-source on-state resistance.

R_DS(ON)/R_{DS(ON)25 ˚C}= f(T_j)

R_DS(ON)= f(V_GS); conditions: I_D= 25 A;

December 1999

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

BUK759-60

VGS(TO) / V

VGS / V

max.

VDS = 14V

VDS = 44V

typ.

min.

QG / nC

-100

-50

Tj / C

100

150

200

Fig.11. Gate threshold voltage.

V_GS(TO)= f(T_j); conditions: I_D= 1 mA; V_DS= V_GS

Fig.14. Typical turn-on gate-charge characteristics.

V_GS= f(Q_G)

Sub-Threshold Conduction

1E-01

Source-Drain Diode Current, IF (A)

VGS = 0 V

1E-02

1E-03

1E-04

1E-05

1E-06

typ

98%

175 C

Tj = 25 C

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.1 1.2 1.3 1.4 1.5

Source-Drain Voltage, VSDS (V)

Fig.12. Sub-threshold drain current.

I_D= f(V_GS); conditions: T_j= 25 ˚C; V_DS= V_GS

Fig.15. Typical reverse diode current.

I_F= f(V_SDS); conditions: V_GS= 0 V; parameter T_j

WDSS%

120

110

100

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Ciss

Coss

Crss

0.01

0.1

100

Tmb /

120

140

160

180

VDS/V

Fig.13. Typical capacitances, C_iss, C_oss, C_rss.

C = f(V_DS); conditions: V_GS= 0 V; f = 1 MHz

Fig.16. Normalised avalanche energy rating.

W_DSS% = f(T_mb); conditions: I_D= 75 A

December 1999

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

VDD

VDS

VGS

-ID/100

T.U.T.

R 01

shunt

RGS

Fig.17. Avalanche energy test circuit.

Fig.19. Switching test circuit.

W_DSS= 0.5 LI_D²BV_DSS/(BV_DSS− V_DD

)

100

25ºC

I_AV

Tj prior to avalanche 150ºC

0.001

0.01

0.1

Avalanche Time, t_AV(ms)

Fig.18. Maximum permissible repetitive avalanche

current(I_AV) versus avalanche time(t_AV) for unclamped

inductive loads.

December 1999

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.20. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

December 1999

Rev 1.000

Philips Semiconductors

Product specification

TrenchMOS transistor

Standard level FET

BUK7540-100A

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

December 1999

Rev 1.000

934056026127 [NXP]

相关型号：

934056032115

934056037135

934056045115

934056046115

934056047115

934056049115

934056052115

934056053115

934056054115

934056055115

934056057115

934056059115