934059012115 [NXP]
4600mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN;
| 型号： | 934059012115 |
| 厂家： | 
NXP |
| 描述： | 4600mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN 开关 晶体管 |
| 文件： | 总15页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS305NX
80 V, 4.6 A NPN low VCEsat (BISS) transistor
Rev. 02 — 8 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PX.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
80
Unit
V
collector-emitter voltage
collector current
open base
-
-
-
-
-
-
4.6
9.2
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
[1]
RCEsat
collector-emitter saturation IC = 4 A;
resistance IB = 200 mA
-
38
53
mΩ
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
emitter
Simplified outline
Symbol
2
1
2
collector
base
3
3
3
2
1
sym042
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS305NX
SC-62
plastic surface-mounted package; collector pad for good SOT89
heat transfer; 3 leads
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PBSS305NX
*5F
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
2 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
80
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
80
V
open collector
5
V
4.6
9.2
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
0.6
W
W
W
°C
°C
°C
-
1.65
2.1
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
+150
+150
Tamb
Tstg
−65
−65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa556
2.5
P
(W)
tot
(1)
(2)
2.0
1.5
1.0
0.5
0
(3)
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
3 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
208
76
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
-
-
junction to ambient
60
Rth(j-sp)
thermal resistance from
junction to solder point
20
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa557
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.33
2
10
0.50
0.20
0.10
0.05
0.02
10
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
4 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
006aaa558
2
10
δ = 1
0.75
Z
th(j-a)
0.50
(K/W)
0.33
0.20
0.10
0.05
10
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa559
2
10
δ = 1
Z
0.75
0.33
th(j-a)
(K/W)
0.50
0.20
0.10
0.05
10
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
5 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
VCB = 80 V; IE = 0 A
-
-
-
-
current
VCB = 80 V; IE = 0 A;
μA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
DC current gain
VCE = 2 V; IC = 0.5 A
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 4 A
VCE = 2 V; IC = 5 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 40 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 400 mA
IC = 4 A; IB = 80 mA
IC = 4.6 A; IB = 230 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 80 mA
300 470
250 420
180 280
-
-
-
90
70
-
140
110
25
-
-
VCEsat
collector-emitter
saturation voltage
40
70
120
140
210
200
320
240
53
80
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
-
50
-
85
-
105
150
140
210
170
38
-
-
-
-
RCEsat
VBEsat
VBEon
collector-emitter
saturation resistance
-
-
53
base-emitter saturation IC = 1 A; IB = 100 mA
voltage
-
0.82 0.9
0.94 1.05
0.77 0.85
IC = 4 A; IB = 400 mA
-
V
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A
-
V
td
tr
delay time
VCC = 12.5 V; IC = 3 A;
IBon = 0.15 A;
IBoff = −0.15 A
-
-
-
-
-
-
-
15
-
-
-
-
-
-
-
ns
rise time
200
215
310
245
555
110
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = 10 V; IC = 100 mA;
f = 100 MHz
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
30
50
pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
6 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
006aaa621
006aaa627
1000
14
I
C
h
FE
(A)
12
I
B
(mA) = 300
800
270
240
210
180
10
8
(1)
(2)
150
120
600
400
200
0
90
60
6
30
(3)
4
2
0
−1
2
3
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
CE
(V)
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
006aaa622
006aaa625
1.2
1.2
V
(V)
V
BEsat
(V)
BE
0.8
0.8
0.4
0
(1)
(2)
(3)
(1)
(2)
(3)
0.4
0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
7 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
006aaa623
006aaa624
1
1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−2
−3
10
10
(1)
(2)
(1)
(2)
(3)
(3)
−2
10
10
10
−3
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa626
006aaa628
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
1
1
(1)
(2)
(3)
(1)
(2)
(3)
−1
−1
10
10
−2
10
−2
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
I
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
8 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
8. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A
Fig 14. Test circuit for switching times
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
9 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
9. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig 15. Package outline SOT89 (SC-62/TO-243)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
1000
4000
PBSS305NX
SOT89
8 mm pitch, 12 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 15.
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
10 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
11. Soldering
4.75
2.25
2.00
1.90
1.20
solder lands
solder resist
0.85
0.20
1.20
1.20
occupied area
1.70
solder paste
4.60
4.85
Dimensions in mm
0.50
1.20
1.00
(3x)
3
2
1
msa442
0.60 (3x)
0.70 (3x)
3.70
3.95
SOT89 standard mounting conditions for reflow soldering
Fig 16. Reflow soldering footprint
6.60
2.40
3.50
2
solder lands
solder resist
7.60
0.50
1.20
3
1
occupied area
3.00
Dimensions in mm
preferred transport direction during soldering
1.50
0.70
5.30
msa423
Not recommended for wave soldering
Fig 17. Wave soldering footprint
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
11 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
12. Mounting
32 mm
30 mm
32 mm
20
2.5 mm
1 mm
mm
40
mm
40
mm
3 mm
1 mm
2.5 mm
0.5 mm
2.5 mm
1 mm
0.5 mm
5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
1.6 mm
001aaa234
001aaa235
PCB thickness:
PCB thickness = 1.6 mm
FR4 PCB = 1.6 mm
ceramic PCB = 0.635 mm
Fig 18. FR4 PCB, standard footprint;
ceramic PCB, Al2O3, standard
footprint
Fig 19. FR4 PCB, mounting pad for
collector 6 cm2
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
12 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
13. Revision history
Table 9.
Revision history
Document ID
PBSS305NX_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20091208
Product data sheet
-
PBSS305NX_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 15 “Package outline SOT89 (SC-62/TO-243)”: updated
• Figure 16 “Reflow soldering footprint”: updated
• Figure 17 “Wave soldering footprint”:updated
PBSS305NX_1
20060817
Product data sheet
-
-
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
13 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS305NX_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 8 December 2009
14 of 15
PBSS305NX
NXP Semiconductors
80 V, 4.6 A NPN low VCEsat (BISS) transistor
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.1
14.2
14.3
14.4
15
16
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 December 2009
Document identifier: PBSS305NX_2
相关型号：
934059015115
5100mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN
NXP
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