935030700623 [NXP]
RF/Microwave Amplifier, RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SOT109-1, MS-012AC, SO-16;
| 型号： | 935030700623 |
| 厂家： | 
NXP |
| 描述： | RF/Microwave Amplifier, RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SOT109-1, MS-012AC, SO-16 放大器 射频 微波 功率放大器 |
| 文件： | 总20页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA5209
Wideband variable gain amplifier
Product specification
Replaces data of 1990 Aug 20
1997 Nov 07
IC17 Data Handbook
Philip s Se m ic ond uc tors
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DESCRIPTION
PIN CONFIGURATION
The SA5209 represents a breakthrough in monolithic amplifier
design featuring several innovations. This unique design has
combined the advantages of a high speed bipolar process with the
proven Gilbert architecture.
N, D PACKAGES
1
2
3
4
5
6
7
8
16
V
V
CC1
CC2
15
14
13
12
11
10
9
GND
GND
1
2
The SA5209 is a linear broadband RF amplifier whose gain is
controlled by a single DC voltage. The amplifier runs off a single 5
volt supply and consumes only 40mA. The amplifier has high
impedance (1kΩ) differential inputs. The output is 50Ω differential.
Therefore, the 5209 can simultaneously perform AGC, impedance
transformation, and the balun functions.
IN
OUT
A
A
GND
GND
IN
2
1
OUT
B
B
GND
GND
2
1
V
GND
GND
BG
2
2
The dynamic range is excellent over a wide range of gain setting.
Furthermore, the noise performance degrades at a comparatively
slow rate as the gain is reduced. This is an important feature when
building linear AGC systems.
V
AGC
SR00237
Figure 1. Pin Configuration
FEATURES
• Gain to 1.5GHz
APPLICATIONS
• 850MHz bandwidth
• Linear AGC systems
• Very linear AM modulator
• RF balun
• High impedance differential input
• 50Ω differential output
• Single 5V power supply
• Cable TV multi-purpose amplifier
• Fiber optic AGC
• 0 - 1V gain control pin
• >60dB gain control range at 200MHz
• 26dB maximum gain differential
• RADAR
• User programmable fixed gain block
• Video
• Exceptional V
/ V
linearity
GAIN
CONTROL
• 7dB noise figure minimum
• Full ESD protection
• Easily cascadable
• Satellite receivers
• Cellular communications
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
-40 to +85°C
ORDER CODE
DWG #
SOT109-1
SOT38-4
16-Pin Plastic Small Outline (SO) package
16-Pin Plastic Dual In-Line Package (DIP)
SA5209D
SA5209N
-40 to +85°C
2
1997 Nov 07
853-1453 18663
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
-0.5 to +8.0
V
o
1
Power dissipation, T = 25 C (still air)
A
16-Pin Plastic DIP
16-Pin Plastic SO
P
D
1450
1100
mW
mW
°C
°C
T
Maximum operating junction temperature
Storage temperature range
150
JMAX
T
-65 to +150
STG
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θ
:
JA
16-Pin DIP: θ = 85°C/W
JA
16-Pin SO: θ = 110°C/W
JA
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
V
CC1
= V
= 4.5 to 7.0V
V
CC2
Operating ambient temperature range
SA Grade
T
A
°C
°C
-40 to +85
Operating junction temperature range
SA Grade
T
J
-40 to +105
DC ELECTRICAL CHARACTERISTICS
o
T = 25 C, V
= V
= +5V, V
= 1.0V, unless otherwise specified.
A
CC1
CC2
AGC
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
MAX
MIN
TYP
DC tested
38
30
17
16
23
22
43
48
I
Supply current
mA
55
CC
1
Over temperature
DC tested, R = 10kΩ
19
25
21
dB
22
L
A
Voltage gain (single-ended in/single-ended out)
Voltage gain (single-ended in/differential out)
V
1
Over temperature
DC tested, R = 10kΩ
27
dB
28
L
A
V
1
Over temperature
DC tested at ±50µA
0.9
0.8
40
1.2
60
1.5
kΩ
1.7
R
Input resistance (single-ended)
Output resistance (single-ended)
Output offset voltage (output referred)
DC level on inputs
IN
1
Over temperature
DC tested at ±1mA
75
R
Ω
OUT
1
Over temperature
35
90
+20
2.0
2.4
45
±100
mV
V
OS
1
Over temperature
±250
1.6
1.4
1.9
1.7
20
2.4
V
IN
V
1
Over temperature
2.6
2.9
V
OUT
DC level on outputs
V
1
Over temperature
3.1
Output offset supply rejection ratio
(output referred)
PSRR
dB
1
Over temperature
15
4.5V<V <7V
CC
1.2
1.1
1.32
1.45
V
R
= 10kΩ
BG
V
BG
Bandgap reference voltage
1
Over temperature
1.55
3
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DC ELECTRICAL CHARACTERISTICS
o
T = 25 C, V
= V
= +5.0V, V
= 1.0V, unless otherwise specified.
A
CC1
CC2
AGC
LIMITS
TYP
10
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
MAX
MIN
1
R
Bandgap loading
Over temperature
2
kΩ
BG
1
V
AGC DC control voltage range
Over temperature
0-1.3
-0.7
V
AGC
0V<V
<1.3V
-6
AGC
I
AGC pin DC bias current
µA
-10
BAGC
1
Over temperature
NOTES:
1. “Over Temperature Range” testing is as follows:
SA is -40 to +85°C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
AC ELECTRICAL CHARACTERISTICS
o
T = 25 C, V
= V
= +5.0V, V
= 1.0V, unless otherwise specified.
A
CC1
CC2
AGC
LIMITS
TYP
SYMBOL
BW
PARAMETER
TEST CONDITIONS
UNIT
MHz
dB
MIN
600
500
MAX
850
-3dB bandwidth
Gain flatness
1
Over temperature
DC - 500MHz
+0.4
+0.6
GF
1
Over temperature
Maximuminputvoltageswing(single-ended)for
linear operation
V
200
mV
mV
IMAX
P-P
2
R = 50Ω
400
1.9
9.3
2.5
-60
0.3
0.013
2
Maximum output voltage swing (single-ended)
L
P-P
V
OMAX
2
for linear operation
R = 1kΩ
L
V
P-P
NF
Noise figure (unmatched configuration)
Equivalent input noise voltage spectral density
Reverse isolation
R
= 50Ω, f = 50MHz
f = 100MHz
dB
S
V
IN-EQ
nV/√Hz
dB
S12
f = 100MHz
∆G/∆V
Gain supply sensitivity (single-ended)
Gain temperature sensitivity
dB/V
CC
∆G/∆T
R = 50Ω
L
dB/°C
pF
C
Input capacitance (single-ended)
-3dB bandwidth of gain control function
1dB gain compression point at output
IN
BW
20
MHz
dBm
AGC
O-1dB
P
f = 100MHz
-3
f = 100MHz, V
=0.1V
AGC
AGC
AGC
P
1dB gain compression point at input
Third-order intercept point at output
-10
dBm
dBm
I-1dB
f = 100MHz, V
>0.5V
IP3
+13
OUT
f = 100MHz, V
<0.5V
IP3
Third-order intercept point at input
Gain match output A to output B
+5
dBm
dB
IN
∆G
f = 100MHz, V
= 1V
0.1
AB
AGC
NOTE:
1. “Over Temperature Range” testing is as follows:
SA is -40 to +85°C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
2. With R > 1kΩ, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With R = 50Ω, overload
L
L
occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
4
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
gain. The 5209 has about a 1.2dB noise figure degradation for
each 2dB gain reduction. With the input matched for optimum gain,
the 8dB noise figure at 23dB gain will degrade to about a 20dB
noise figure at 0dB gain.
SA5209 APPLICATIONS
The SA5209 is a wideband variable gain amplifier (VGA) circuit
which finds many applications in the RF, IF and video signal
processing areas. This application note describes the operation of
the circuit and several applications of the VGA. The simplified
equivalent schematic of the VGA is shown in Figure 2. Transistors
Q1-Q6 form the wideband Gilbert multiplier input stage which is
biased by current source I1. The top differential pairs are biased
The SA5209 also displays excellent linearity between voltage gain
and control voltage. Indeed, the relationship is of sufficient linearity
that high fidelity AM modulation is possible using the SA5209. A
maximum control voltage frequency of about 20MHz permits video
baseband sources for AM.
from a buffered and level-shifted signal derived from the V
input
AGC
and the RF input appears at the lower differential pair. The circuit
topology and layout offer low input noise and wide bandwidth. The
second stage is a differential transimpedance stage with current
feedback which maintains the wide bandwidth of the input stage.
The output stage is a pair of emitter followers with 50Ω output
impedance. There is also an on-chip bandgap reference with
buffered output at 1.3V, which can be used to derive the gain control
voltage.
A stabilized bandgap reference voltage is made available on the
SA5209 (Pin 7). For fixed gain applications this voltage can be
resistor divided, and then fed to the gain control terminal (Pin 8).
Using the bandgap voltage reference for gain control produces very
stable gain characteristics over wide temperature ranges. The gain
setting resistors are not part of the RF signal path, and thus stray
capacitance here is not important.
The wide bandwidth and excellent gain control linearity make the
SA5209 VGA ideally suited for the automatic gain control (AGC)
function in RF and IF processing in cellular radio base stations,
Direct Broadcast Satellite (DBS) decoders, cable TV systems, fiber
optic receivers for wideband data and video, and other radio
communication applications. A typical AGC configuration using the
SA5209 is shown in Figure 3. Three SA5209s are cascaded with
appropriate AC coupling capacitors. The output of the final stage
drives the full-wave rectifier composed of two UHF Schottky diodes
Both the inputs and outputs should be capacitor coupled or DC
isolated from the signal sources and loads. Furthermore, the two
inputs should be DC isolated from each other and the two outputs
should likewise be DC isolated from each other. The SA5209 was
designed to provide optimum performance from a 5V power source.
However, there is some range around this value (4.5 - 7V) that can
be used.
The input impedance is about 1kΩ. The main advantage to a
differential input configuration is to provide the balun function.
Otherwise, there is an advantage to common mode rejection, a
specification that is not normally important to RF designs. The
source impedance can be chosen for two different performance
characteristics: Gain, or noise performance. Gain optimization will
be realized if the input impedance is matched to about 1kΩ. A 4:1
balun will provide such a broadband match from a 50Ω source.
Noise performance will be optimized if the input impedance is
matched to about 200Ω. A 2:1 balun will provide such a broadband
match from a 50Ω source. The minimum noise figure can then be
expected to be about 7dB. Maximum gain will be about 23dB for a
single-ended output. If the differential output is used and properly
matched, nearly 30dB can be realized. With gain optimization, the
noise figure will degrade to about 8dB. With no matching unit at the
input, a 9dB noise figure can be expected from a 50Ω source. If the
source is terminated, the noise figure will increase to about 15dB.
All these noise figures will occur at maximum gain.
BAT17 as shown. The diodes are biased by R1 and R2 to V
such
CC
that a quiescent current of about 2mA in each leg is achieved. An
SA5230 low voltage op amp is used as an integrator which drives
the V
pin on all three SA5209s. R3 and C3 filter the high
AGC
frequency ripple from the full-wave rectified signal. A voltage
divider is used to generate the reference for the non-inverting input
of the op amp at about 1.7V. Keeping D3 the same type as D1 and
D2 will provide a first order compensation for the change in Schottky
voltage over the operating temperature range and improve the AGC
performance. R6 is a variable resistor for adjustments to the op
amp reference voltage. In low cost and large volume applications
this could be replaced with a fixed resistor, which would result in a
slight loss of the AGC dynamic range. Cascading three SA5209s
will give a dynamic range in excess of 60dB.
The SA5209 is a very user-friendly part and will not oscillate in most
applications. However, in an application such as with gains in
excess of 60dB and bandwidth beyond 100MHz, good PC board
layout with proper supply decoupling is strongly recommended.
The SA5209 has an excellent noise figure vs gain relationship. With
any VGA circuit, the noise performance will degrade with decreasing
V
CC
R
3
R
R
2
1
Q
7
A1
Q
8
OUT
OUT
A
B
Q
Q
Q
Q
4
1
2
3
Ω
Ω
50
50
R
4
I
I
3
2
V
AGC
+
–
Q
Q
6
5
0–1V
IN
B
BANDGAP
REFERENCE
V
BG
IN
A
I
1
SR00238
Figure 2. Equivalent Schematic of the VGA
5
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
AGC
OUTPUT
RF/IF
INPUT
5209
5209
5209
V
CC
R1
R2
R4
C4
L1
L2
R
=
R
R
R
R
R
=
=
=
=
=
3.9k
1
2
3
4
5
6
360Ω
62k
D1
D2
100Ω
1k pot
BAT 17
C3
–
5230
2πfL
=
=
10k
1
1
+
R3
L
L
2
D3
R6
V
CC
R5
BAT 17
SR00239
Figure 3. AGC Configuration Using Cascaded SA5209s
0.1µF
10µF
0.1µF
+
V
CC
5VDC
V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
V
CC1
CC2
GND1
GND
2
V
IN
A
OUT
IN
OUT
A
A
0.1µF
0.1µF
0.1µF
50Ω
GND1
GND2
IN
B
OUT
B
OUT
B
0.1µF
GND1
GND2
GND2
GND2
V
BG
V
AGC
(16-Pin SO, 150-mil wide)
SR00240
Figure 4. VGA AC Evaluation Board
+5V
MINI CIRCUITS
2:1 BALUN
OR SIMILAR
50Ω
SOURCE
50Ω
OUTPUT
5209
50Ω
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain.
1 : 2
V
AGC
+1V
SR00241
Figure 5. Broadband Noise Optimization
6
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
+5V
2:1 TURNS RATIO
LC TUNED
TRANSFORMER
50Ω
50Ω
OUTPUT
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain. Narrowband circuits
have the advantage of greater stabil-
ity, particularly when multiple de-
vices are cascaded.
5209
SOURCE
50Ω
V
AGC
+1V
SR00242
Figure 6. Narrowband Noise Optimization
+5V
MINI CIRCUITS
4:1 BALUN OR
EQUIVALENT
50Ω
50Ω
SOURCE
OUTPUT
This circuit will exhibit about an 8dB
noise figure with 24dB gain.
5209
1 : 4
50Ω
V
AGC
+1V
SR00243
Figure 7. Broadband Gain Optimization
+5V
4:1 TURNS RATIO
LC TUNED
TRANSFORMER
50Ω
50Ω
OUTPUT
This circuit will exhibit approximate-
ly an 8dB noise figure and 25dB gain.
5209
SOURCE
50Ω
V
AGC
+1V
SR00244
Figure 8. Narrowband Gain Optimization
+5V
50Ω
50Ω
SOURCE
OUTPUT
50Ω
The noisefigureofthisconfiguration
will be approximately 15dB.
5209
50Ω
V
AGC
+1V
SR00245
Figure 9. Simple Amplifier Configuration
+5V
50Ω
50Ω
SOURCE
OUTPUT
With the 50Ω source left untermi-
5209
nated, the noise figure is 9dB.
50Ω
V
AGC
+1V
SR00246
Figure 10. Unterminated Configuration
7
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
+5V
50Ω
50Ω
SOURCE
OUTPUT
5209
Gain = 19dB + 20log
V
10 AGC
50Ω
V
R2
AGC
= ƪ
ƫ
≤ 1V
VBG
where V
AGC
R1 ) R2
V
BG
and is in units of Volts, for V
AGC
R
R
2
1
SR00247
Figure 11. User-Programmable Fixed Gain Block
+5V
FULL CARRIER
AM (DSB)
50Ω
RF INPUT
50Ω
OUTPUT
5209
V
SOURCE
50Ω
All harmonic distortion products will be
at least -50dBc over the audio spectrum.
AGC
.5V
+5V
R
9R
MODULATING
SIGNAL
SR00248
Figure 12. AM Modulator
50Ω
CRYSTAL
FILTER
OUTPUT
5209
5209
5209
50Ω
V
AGC
V
V
AGC
AGC
The high input impedance to the NE5209 makes matching
to crystal filters relatively easy. The total delta gain of this
systemwillapproach80dB. IFfrequencieswellintotheUHF
region can be configured with this type of architecture.
GAIN CONTROL
SIGNAL
SR00249
Figure 13. Receiver AGC IF Gain
(+5V, unless otherwise noted)
V
CC
R
S
±
V
R
R
L
S
T
5209
R
R
L
T
±
V
AGC
SR00250
Figure 14. Test Set-up 1 (Used for all Graphs)
8
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
10
20
19.5
19
V
= 5.5V
= 5.0V
= 4.5V
CC
CC
CC
9
8
7
6
5
4
3
2
1
0
V
V
5.5V
5.0V
4.5V
18.5
18
17.5
17
R
= 0Ω
= ∞
S
L
T = 25°C
R
R
= R = 50Ω
S
L
R = ∞
t
R = ∞
t
16.5
16
V
= 1.1V
AGC
f = 10MHz
See Test Setup 1
DC Tested
See test-setup 1
15.5
15
0
0.2
0.4
0.6
V
0.8
1
1.2
–100
–50
0
50
100
150
Temperature (°C)
(V)
AGC
SR00251
SR00252
Figure 15. Gain vs V
and V
Figure 17. Voltage Gain vs Temperature and V
AGC
CC
CC
-55°C
+25°C
10
9
8
7
6
5
4
3
2
1
0
55
50
45
40
35
30
25
20
+125°C
V
= 7.0V
= 6.0V
CC
V
CC
V
V
= 5.0V
= 4.5V
CC
CC
R
S
= R = 50Ω
L
R
= ∞
t
See test-setup 1
See test-setup 1
100
–100
–50
0
50
150
Temperature (°C)
0
0.2
0.4
0.6
(V)
0.8
1
1.2
V
AGC
SR00253
SR00254
Figure 16. Insertion Gain vs V
and Temperature
Figure 18. Supply Current vs Temperature and V
CC
AGC
9
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
1.5
1.45
1.4
5
4.5
4
V
= 7.0V
= 6.0V
CC
V
CC
1.35
3.5
3
V
= 7.0V
= 4.5V
CC
1.3
1.25
1.2
V
CC
V
= 5.0V
= 4.5V
CC
CC
2.5
2
V
1.15
1.1
1.5
1
DC Tested
See test-setup 1
DC Tested
See test-setup 1
1.05
1
0.5
0
–100
–50
0
50
100
150
–100
–50
0
50
100
150
Temperature (°C)
Temperature (°C)
SR00255
SR00256
Figure 19. Input Resistance vs Temperature
Figure 21. Output Bias Voltage vs Temperature and V
CC
2.5
2
2.5
2
V
= 7.0V
CC
CC
= 5.0V
CC
V
V
V
= 6.0V
1.5
1.5
= 4.5V
CC
V
= 1.1V
AGC
= 10kΩ
1
0.5
0
R
1
0.5
0
L
DC Tested
See test-setup 1
DC Tested
See test-setup 1
–100
–50
0
50
100
150
–100
–50
0
50
100
150
Temperature (°C)
Temperature (°C)
SR00257
SR00258
Figure 20. Input Bias Voltage vs Temperature
Figure 22. DC Output Swing vs Temperature
10
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
16
14
12
10
8
20
10
1.1V
0.8V
V
V
V
V
= 7.0V
= 6.0V
= 5.0V
= 4.5V
CC
CC
CC
CC
0.4V
200mV
100mV
50mV
25mV
0
T = 25°C
= 1.1V
V
6
AGC
= 50Ω
–10
R
t
f = 10MHz
4
See Test Setup 1
T = 25°C
= R
50Ω
–20
–30
R
=
L
2
S
R
= 50Ω
t
0
See Test
Setup 1
–100
–50
0
50
100
150
10
100
1000 1500
Temperature (°C)
Frequency (MHz)
SR00259
SR00260
Figure 23. Insertion Gain vs Frequency and V
Figure 25. Insertion Gain vs Temperature and V
AGC
CC
15
0
5.5V
4.5V
–5
10
–10
5
125°C
–15
T = 25°C
25°C
V
= 1.1V
AGC
0
R
= R = 50Ω
-55°C
S
L
R = 50Ω
See Test Setup 1
–20
t
R
= R = 50Ω
S L
R
= 50Ω
t
See Test Setup 1
–5
–25
10
100
Frequency (MHz)
10
1000 1500
100
1000 1500
Frequency (MHz)
SR00261
SR00262
Figure 24. Insertion Gain vs Frequency and V
Figure 26. Output Return Loss vs Frequency
CC
11
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
0
–10
–20
–30
–40
–50
15
10
5
OUTPUT
T = 25°C
= R = 50Ω
R
S
L
R
= 50Ω
t
f = 100MHz
See test-setup 1
–60
T = 25°C
INPUT
0
R
= R = 50Ω
S
L
–70
–80
–90
R = 50Ω
t
See test-setup 1
–5
0
0.2
0.4
0.6
(V)
0.8
1
V
Frequency (MHz)
AGC
SR00263
OUTPUT
INPUT
SR00264
Figure 27. Reverse Isolation vs Frequency
Figure 29. Third-Order Intermodulation Intercept vs V
AGC
0
–5
20
18
16
14
12
10
–10
–15
–20
–25
–30
T = 25°C
8
R
= R = 50Ω
S
L
R
= 50Ω
T = 25°C
t
f = 100MHz
See test-setup 1
6
4
2
0
R
= R = 50Ω
S
L
= ∞
R
t
f = 50MHz
See test-setup 1
0
0.2
0.4
0.6
(V)
0.8
1
0
0.2
0.4
V
0.6
(V)
0.8
1
V
AGC
AGC
SR00265
SR00266
Figure 28. 1dB Gain Compression vs V
Figure 30. Noise Figure vs V
AGC
AGC
12
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
12
10
8
16
14
0Ω Termination
12
on INB
10
50Ω Termination
8
6
4
2
0
6
on INB
T = 25°C
= 1.1V
4
R
= R = 50Ω
L
t
S
V
AGC
= R = 50Ω
R
= 50Ω
R
S
L
R
= R = 10k
1
2
R = ∞ on INA
t
f = 100MHz
2
See test-setup 1
See Figure 10
0
10
100
1000
–60
–10
40
90
140
Frequency (MHz)
Temperature (°C)
SR00267
SR00268
Figure 31. Noise Figure vs Frequency
Figure 33. Fixed Gain vs Temperature
1.4
V
V
V
V
= 7.0V
= 6.0V
= 5.0V
= 4.5V
CC
CC
CC
CC
+VCC
GND
1.35
1.3
1.25
1.2
INA
OUTA
1.15
1.1
INB
OUTB
NE5209
Bandgap Load = 2kΩ
TOP VIEW - COMPONENT SIDE
1.05
1
–100
–50
0
50
100
150
Temperature (°C)
SR00269
Figure 32. Bandgap Voltage vs Temperature and V
CC
TOP VIEW - SOLDER SIDE
Figure 34. VGA AC Evaluation Board Layout
SR00270
13
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
+V
OUT
GND
CC
A
IN
A
NE5209
IN
B
OUT
B
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE
Figure 35. AGC Configuration Using Cascaded SA5209s - Layout
SR00271
AMP10101 / NE5219SO/DN8.90
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE
SR00272
Figure 36. VGA AC Evaluation Board Layout (DIP Package)
14
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
15
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DIP16: plastic dual in-line package; 16 leads (300 mil)
SOT38-4
16
1997 Nov 07
Philips Semiconductors
Product specification
Wideband variable gain amplifier
SA5209
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
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SA5209; Wideband
variable gain
amplifier
download datasheet
Download datasheet
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General description
The SA5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This
unique design has combined the advantages of a high speed bipolar process with the proven Gilbert
architecture.
Catalog by
System
•
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Packages
•
•
The SA5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The
amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kΩ)
differential inputs. The output is 50Ω differential. Therefore, the 5209 can simultaneously perform AGC,
impedance transformation, and the balun functions.
End of Life
information
Distributors Go
Here!
•
•
The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance
degrades at a comparatively slow rate as the gain is reduced. This is an important feature when building
linear AGC systems.
Models
•
•
SoC solutions
Features
●
●
●
Gain to 1.5GHz
850MHz bandwidth
High impedance differential input
50Ω differential output
Single 5V power supply
0 - 1V gain control pin
●
●
●
●
●
●
>60dB gain control range at 200MHz
26dB maximum gain differential
Exceptional V
/ V
linearity
CONTROL
GAIN
●
●
●
7dB noise figure minimum
Full ESD protection
Easily cascadable
Applications
●
●
●
●
●
●
●
●
●
●
Linear AGC systems
Very linear AM modulator
RF balun
Cable TV multi-purpose amplifier
Fiber optic AGC
RADAR
User programmable fixed gain block
Video
Satellite receivers
Cellular communications
AN177: An Overview Of The Phase-Locked Loop (PLL) (date 01-Dec-88)
AN178: Modeling The PLL (date 01-Dec-88)
Datasheet
Type
number
Title
Publication
release date
Datasheet status
Page
count
File
size
(kB)
Datasheet
SA5209
Wideband
variable gain
amplifier
11/7/1997
Product
specification
17
211
Download
Parametrics
Type
number
Package Operating Dual GBW
Input
PSRR(mV/V) Single
supply(V
temp.(Cel)
product(MHz) noise(pA/sqrt(Hz))
)
DC
SOT109
(SO16)
SA5209D
-40~85
yes 850 2.5
45
4.5 to 7
Products, packages, availability and ordering
Type
North
Ordering code Marking/Packing Package Device status Buy online
IC packing info
number
American (12NC)
type
number
SOT109
(SO16)
Standard Marking *
Tube (Signetics)
Full production
Full production
SA5209D SA5209D
9350 307 00602
Standard Marking *
9350 307 00623 Reel Pack, SMD,
13" (Signetics)
SOT109
(SO16)
SA5209D-
T
Products in the above table are all in production. Some variants are discontinued; click here for information
on these variants.
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