935032310623 [NXP]

F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDSO14, 3.90 MM, PLASTIC, SOT-108-1, SO-14;
935032310623
型号: 935032310623
厂家: NXP    NXP
描述:

F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDSO14, 3.90 MM, PLASTIC, SOT-108-1, SO-14

输入元件 光电二极管 逻辑集成电路
文件: 总8页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
74F00  
Quad 2-input NAND gate  
Product specification  
IC15 Data Handbook  
1990 Oct 04  
Philips  
Semiconductors  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74F00  
FEATURE  
PIN CONFIGURATION  
Industrial temperature range available (–40°C to +85°C)  
D0a  
D0b  
Q0  
1
2
3
4
5
14  
V
CC  
13 D3b  
12 D3a  
11 Q3  
TYPE  
TYPICAL  
PROPAGATION  
DELAY  
TYPICAL  
SUPPLY CURRENT  
(TOTAL)  
D1a  
D1b  
74F00  
3.4ns  
4.4mA  
10 D2b  
Q1  
6
7
9
8
D2a  
Q2  
GND  
SF00001  
ORDERING INFORMATION  
ORDER CODE  
DESCRIPTION  
PKG DWG #  
COMMERCIAL RANGE  
= 5V ±10%, T = 0°C to +70°C  
INDUSTRIAL RANGE  
V
CC  
V
CC  
= 5V ±10%, T  
= –40°C to +85°C  
amb  
amb  
14-pin plastic DIP  
14-pin plastic SO  
N74F00N  
N74F00D  
I74F00N  
SOT27-1  
I74F00D  
SOT108-1  
INPUT AND OUTPUT LOADING AND FAN OUT TABLE  
PINS  
Dna, Dnb  
Qn  
DESCRIPTION  
74F (U.L.) HIGH/LOW  
LOAD VALUE HIGH/LOW  
20µA/0.6mA  
Data inputs  
Data output  
1.0/1.0  
50/33  
1.0mA/20mA  
NOTE: One (1.0) FAST unit load is defined as: 20µA in the high state and 0.6mA in the low state.  
LOGIC DIAGRAM  
FUNCTION TABLE  
1
2
INPUTS  
OUTPUT  
D0a  
3
6
Q0  
D0b  
Dna  
L
Dnb  
Qn  
H
4
5
D1a  
D1b  
L
H
L
Q1  
Q2  
Q3  
L
H
9
D2a  
D2b  
8
H
H
10  
H
H
L
12  
13  
11  
V
= Pin 14  
D3a  
D3b  
CC  
NOTES:  
GND = Pin 7  
H
L
= High voltage level  
= Low voltage level  
SF00002  
LOGIC SYMBOL  
IEC/IEEE SYMBOL  
&
1
2
3
6
1
2
4
5
9
10 12 13  
4
5
D0a D0bD1a D1bD2a D2b D3a D3b  
Q0 Q1 Q2 Q3  
9
8
10  
12  
13  
11  
3
6
8
11  
V
= Pin 14  
CC  
GND = Pin 7  
SF00003  
SF00004  
2
October 4, 1990  
853-0325 00623  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74F00  
ABSOLUTE MAXIMUM RATINGS  
(Operation beyond the limit set forth in this table may impair the useful life of the device.  
Unless otherwise noted these limits are over the operating free air temperature range.)  
SYMBOL  
PARAMETER  
RATING  
–0.5 to +7.0  
–0.5 to +7.0  
–30 to +5  
UNIT  
V
V
Supply voltage  
Input voltage  
Input current  
CC  
IN  
V
V
I
mA  
V
IN  
V
OUT  
OUT  
Voltage applied to output in high output state  
Current applied to output in low output state  
Operating free air temperature range  
–0.5 to V  
40  
CC  
I
mA  
°C  
°C  
°C  
T
amb  
Commercial range  
Industrial range  
0 to +70  
–40 to +85  
–65 to +150  
T
stg  
Storage temperature range  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
PARAMETER  
LIMITS  
UNIT  
MIN  
4.5  
NOM  
MAX  
V
Supply voltage  
5.0  
5.5  
V
V
CC  
IH  
IL  
V
V
High-level input voltage  
Low-level input voltage  
Input clamp current  
2.0  
0.8  
–18  
–1  
V
I
I
I
mA  
mA  
mA  
°C  
°C  
Ik  
High-level output current  
Low-level output current  
OH  
OL  
20  
T
amb  
Operating free air temperature range  
Commercial range  
Industrial range  
0
+70  
+85  
–40  
DC ELECTRICAL CHARACTERISTICS  
(Over recommended operating free-air temperature range unless otherwise noted.)  
1
SYMBOL  
PARAMETER  
TEST CONDITIONS  
LIMITS  
UNIT  
2
MIN  
2.5  
TYP  
MAX  
V
V
V
High-level output voltage  
V
V
V
V
V
V
= MIN, V = MAX  
±10%V  
V
V
OH  
OL  
IK  
CC  
IL  
CC  
= MIN, I = MAX  
±5%V  
2.7  
3.4  
0.30  
0.30  
-0.73  
IH  
OH  
CC  
Low-level output voltage  
Input clamp voltage  
= MIN, V = MAX  
±10%V  
0.50  
0.50  
-1.2  
100  
V
CC  
IL  
CC  
CC  
= MIN, I = MAX  
±5%V  
V
IH  
Ol  
= MIN, I = I  
IK  
V
CC  
CC  
I
I
I
Input current at maximum input  
voltage  
= MAX, V = 7.0V  
µA  
I
I
I
I
I
High-level input current  
Low-level input current  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= MAX, V = 2.7V  
20  
µA  
mA  
mA  
mA  
mA  
IH  
I
= MAX, V = 0.5V  
-0.6  
-150  
2.8  
IL  
I
3
Short-circuit output current  
= MAX  
= MAX  
= MAX  
-60  
OS  
CC  
Supply current (total)  
I
V
= GND  
= 4.5V  
IN  
1.9  
6.8  
CCH  
IN  
I
V
10.2  
CCL  
NOTES:  
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.  
2. All typical values are at V = 5V, T = 25°C.  
CC  
amb  
3. Not more than one output should be shorted at a time. For testing I , the use of high-speed test apparatus and/or sample-and-hold  
OS  
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting  
of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any  
sequence of parameter tests, I tests should be performed last.  
OS  
3
October 4, 1990  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74F00  
AC ELECTRICAL CHARACTERISTICS  
LIMITS  
V
= +5.0V  
= +25°C  
V
= +5.0V ± 10%  
= 0°C to +70°C  
V
= +5.0V ± 10%  
CC  
CC  
CC  
TEST  
CONDITION  
SYMBOL  
PARAMETER  
T
amb  
T
amb  
T = –40°C to +85°C  
amb  
C = 50pF, R = 500Ω  
L L  
UNIT  
C = 50pF, R = 500Ω  
C = 50pF, R = 500Ω  
L
L
L
L
MIN  
TYP  
MAX  
MIN  
MAX  
MIN  
MAX  
t
t
Propagation delay  
Dna, Dnb to Qn  
2.4  
2.0  
3.7  
3.2  
5.0  
4.3  
2.4  
2.0  
6.0  
5.3  
2.0  
1.5  
6.5  
6.0  
PLH  
PHL  
Waveform 1  
ns  
AC WAVEFORMS  
For all waveforms, V = 1.5V.  
M
Dna, Dnb  
V
V
M
M
t
t
PHL  
PLH  
V
V
M
M
Qn  
SF00005  
Waveform 1. Propagation delay for inverting outputs  
TEST CIRCUIT AND WAVEFORM  
t
AMP (V)  
V
w
CC  
90%  
90%  
NEGATIVE  
PULSE  
V
V
M
M
10%  
10%  
V
V
OUT  
IN  
0V  
PULSE  
GENERATOR  
D.U.T.  
t
t )  
t
t )  
THL ( f  
TLH ( r  
R
C
R
L
t
t )  
T
L
t
t )  
TLH ( r  
THL ( f  
AMP (V)  
0V  
90%  
M
90%  
POSITIVE  
PULSE  
V
V
M
10%  
10%  
Test Circuit for Totem-Pole Outputs  
DEFINITIONS:  
t
w
Input Pulse Definition  
INPUT PULSE REQUIREMENTS  
R
L
C
L
R
T
=
=
=
Load resistor;  
see AC ELECTRICAL CHARACTERISTICS for value.  
Load capacitance includes jig and probe capacitance;  
see AC ELECTRICAL CHARACTERISTICS for value.  
family  
V
rep. rate  
t
w
t
t
THL  
amplitude  
3.0V  
M
TLH  
Termination resistance should be equal to Z  
pulse generators.  
of  
OUT  
2.5ns 2.5ns  
74F  
1.5V  
1MHz  
500ns  
SF00006  
4
October 4, 1990  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74F00  
DIP14: plastic dual in-line package; 14 leads (300 mil)  
SOT27-1  
5
1990 Oct 04  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74F00  
SO14: plastic small outline package; 14 leads; body width 3.9 mm  
SOT108-1  
6
1990 Oct 04  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74F00  
NOTES  
7
1990 Oct 04  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74F00  
Data sheet status  
[1]  
Data sheet  
status  
Product  
status  
Definition  
Objective  
specification  
Development  
This data sheet contains the design target or goal specifications for product development.  
Specification may change in any manner without notice.  
Preliminary  
specification  
Qualification  
This data sheet contains preliminary data, and supplementary data will be published at a later date.  
Philips Semiconductors reserves the right to make chages at any time without notice in order to  
improve design and supply the best possible product.  
Product  
specification  
Production  
This data sheet contains final specifications. Philips Semiconductors reserves the right to make  
changes at any time without notice in order to improve design and supply the best possible product.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
RighttomakechangesPhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1998  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
print code  
Date of release: 10-98  
9397-750-05051  
Document order number:  
Philips  
Semiconductors  

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