935173420118 [NXP]
IC ABT SERIES, 16 1-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56, 7.50 MM, PLASTIC, MO-118, SOT-371-1, SSOP3-56, Bus Driver/Transceiver;![935173420118](http://pdffile.icpdf.com/pdf2/p00265/img/icpdf/935203210112_1594226_icpdf.jpg)
型号: | 935173420118 |
厂家: | ![]() |
描述: | IC ABT SERIES, 16 1-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56, 7.50 MM, PLASTIC, MO-118, SOT-371-1, SSOP3-56, Bus Driver/Transceiver 信息通信管理 光电二极管 输出元件 逻辑集成电路 |
文件: | 总12页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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INTEGRATED CIRCUITS
74ABT16543
16-bit latched transceiver
with dual enable (3-State)
Product data
2002 Apr 03
Replaces 74ABT16543; 74ABTH16543 dated 1998 Feb 27
Philips
Semiconductors
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
FEATURES
DESCRIPTION
The 74ABT16543 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
• Two 8-bit octal transceivers with D-type latch
• Live insertion/extraction permitted
• Power-up 3-State
The 74ABT16543 16-bit registered transceiver contains two sets of
D-type latches for temporary storage of data flowing in either
direction. Separate Latch Enable (nLEAB, nLEBA) and Output
Enable (nOEAB, nOEBA) inputs are provided for each register to
permit independent control of data transfer in either direction. The
outputs are guaranteed to sink 64 mA.
• Power-up reset
• Multiple V and GND pins minimize switching noise
CC
• Back-to-back registers for storage
• Separate controls for data flow in each direction
• Output capability: +64 mA/–32 mA
• Latch-up protection exceeds 500 mA per JEDEC Std 17
• ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
QUICK REFERENCE DATA
CONDITIONS
= 25 °C; GND = 0 V
SYMBOL
PARAMETER
TYPICAL
UNIT
T
amb
t
t
Propagation delay
nAx to nBx
2.5
2.2
PLH
PHL
C = 50 pF; V = 5 V
ns
L
CC
C
Input capacitance
I/O capacitance
V = 0 V or V
CC
3
7
pF
pF
IN
I
C
V
O
= 0 V or V
3-State
CC;
I/O
I
Outputs disabled; V = 5.5 V
550
9
µA
mA
CCZ
CC
Quiescent supply current
I
Outputs low; V = 5.5 V
CC
CCL
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
ORDER CODE
74ABT16543DL
74ABT16543DGG
DWG NUMBER
SOT371-1
56-Pin Plastic SSOP Type III
56-Pin Plastic TSSOP Type II
–40 °C to +85 °C
–40 °C to +85 °C
SOT364-1
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
Data inputs/outputs
Data inputs/outputs
5, 6, 8, 9, 10, 12, 13, 14
15, 16, 17, 19, 20, 21, 23, 24
1A0 – 1A7,
2A0 – 2A7
52, 51, 49, 48, 47, 45, 44, 43
42, 41, 40,38, 37, 36, 34, 33
1B0 – 1B7,
2B0 – 2B7
1, 56
28, 29
1OEAB, 1OEBA,
2OEAB, 2OEBA
A-to-B / B-to-A Output Enable inputs (Active-LOW)
A-to-B / B-to-A Enable inputs (Active-LOW)
3, 54
26, 31
1EAB, 1EBA,
2EAB, 2EBA
2, 55
27, 30
1LEAB, 1LEBA,
2LEAB, 2LEBA
A-to-B / B-to-A Latch Enable inputs (Active-LOW)
4, 11, 18, 25, 32, 39, 46, 53
7, 22, 35, 50
GND
Ground (0 V)
V
CC
Positive supply voltage
2
2002 Apr 03
853-1739 27958
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
LOGIC SYMBOL (IEEE/IEC)
PIN CONFIGURATION
1
2
56
55
1OEAB
1LEAB
1EAB
GND
1OEBA
1LEBA
56
1OEBA
1EBA
1EN3
G1
54
3
54 1EBA
55
1
1LEBA
1OEAB
1C5
GND
1B0
4
53
52
2EN4
1A0
5
3
2
1EAB
G2
1A1
6
51 1B1
1LEAB
2C6
7
50
49
48
47
46
45
44
43
42
41
40
39
38
V
V
CC
CC
29
31
2OEBA
2EBA
7EN9
G7
8
1A2
1A3
1B2
1B3
9
30
28
1A4
1B4
10
11
12
13
14
15
16
17
18
19
2LEBA
2OEAB
7C11
GND
1A5
1A6
1A7
2A0
GND
1B5
1B6
1B7
2B0
8EN10
26
27
2EAB
G8
2LEAB
8C12
5
52
3
1A0
1B0
5D
2A1
2A2
2B1
2B2
6D
4
6
51
49
48
47
45
1A1
1A2
1A3
1A4
1A5
1B1
1B2
1B3
1B4
1B5
8
GND
2A3
GND
2B3
9
10
12
2A4 20
37 2B4
21
22
23
24
36
35
34
33
2A5
2B5
V
13
14
15
44
43
42
1A6
1A7
2A0
1B6
1B7
2B0
V
CC
CC
2A6
2B6
2B7
9
11D
10
2A7
12D
GND 25
32 GND
16
17
19
41
40
38
2A1
2A2
2A3
2B1
2B2
2B3
26
27
28
31
30
29
2EAB
2LEAB
2OEAB
2EBA
2LEBA
2OEBA
20
21
37
36
2A4
2A5
2B4
2B5
SH00037
23
24
34
33
2A6
2A7
2B6
2B7
SH00036
3
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
LOGIC SYMBOL
FUNCTIONAL DESCRIPTION
The 74ABT16543 contains two sets of eight D-type latches, with
separate control pins for each set. Using data flow from A to B as an
example, when the A-to-B Enable (nEAB) input and the A-to-B Latch
Enable (nLEAB) input are LOW the A-to-B path is transparent.
5
6
8
9
10 12 13 14
1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7
1EAB
A subsequent LOW-to-HIGH transition of the nLEAB signal puts the
A data into the latches where it is stored and the B outputs no longer
change with the A inputs. With EAB and nOEAB both LOW, the
3-State B output buffers are active and display the data present at
the outputs of the A latches.
3
54
2
1EBA
1OEAB
1OEBA
1
1LEAB
1LEBA
56
55
1B0 1B1 1B2 1B3 1B4 1B5 1B6 1B7
Control of data flow from B to A is similar, but using the nEBA,
nLEBA, and nOEBA inputs.
52 51 49 48 47 45 44 43
15 16 17 19 20 21 23 24
2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7
2EAB
26
31
27
30
2EBA
2OEAB
2OEBA
28
29
2LEAB
2LEBA
2B0 2B1 2B2 2B3 2B4 2B5 2B6 2B7
42 41 40 38 37 36 34 33
SH00038
FUNCTION TABLE
INPUTS
OUTPUTS
STATUS
nBx or nAx
nOEXX
nEXX
nLEXX
nAx or nBx
H
X
X
H
X
X
X
X
Z
Z
Disabled
Disabled
L
L
↑
↑
L
L
h
l
Z
Z
Disabled + Latch
Latch + Display
L
L
L
L
↑
↑
h
l
H
L
L
L
L
L
L
L
H
L
H
L
Transparent
Hold
L
L
H
X
NC
H
h
L
l
X
↑
=
=
=
=
=
=
High voltage level
High voltage level one set-up time prior to the LOW-to-HIGH transition of nLEXX or nEXX (XX = AB or BA)
Low voltage level
Low voltage level one set-up time prior to the LOW-to-HIGH transition of nLEXX or nEXX (XX = AB or BA)
Don’t care
LOW-to-HIGH transition of nLEXX or nEXX (XX = AB or BA)
NC= No change
High impedance or “off” state
Z
=
4
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
LOGIC DIAGRAM
DETAIL A
nB0
D
Q
LE
nA0
Q
D
LE
nA1
nA2
nA3
nA4
nA5
nA6
nA7
nB1
nB2
nB3
nB4
nB5
nB6
nB7
DETAIL A X 7
nOEBA
nOEAB
nEAB
nEBA
nLEBA
nLEAB
SH00039
1, 2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
DC supply voltage
CONDITIONS
RATING
–0.5 to +7.0
UNIT
V
V
CC
I
IK
DC input diode current
V < 0 V
I
–18
–1.2 to +7.0
–50
mA
V
3
V
I
DC input voltage
I
DC output diode current
V
O
< 0 V
mA
V
OK
3
V
OUT
DC output voltage
output in Off or HIGH state
output in LOW state
–0.5 to +5.5
128
mA
mA
°C
I
DC output current
OUT
output in HIGH state
–64
T
stg
Storage temperature range
–65 to +150
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
5
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
PARAMETER
UNIT
Max
Min
4.5
0
V
CC
DC supply voltage
5.5
V
V
V
I
Input voltage
V
CC
V
HIGH-level input voltage
LOW-level Input voltage
HIGH-level output current
LOW-level output current
Input transition rise or fall rate
2.0
V
IH
V
0.8
–32
64
V
IL
I
mA
mA
ns/V
°C
OH
I
OL
∆t/∆v
0
10
T
amb
Operating free-air temperature range
–40
+85
DC ELECTRICAL CHARACTERISTICS
LIMITS
T
= –40 °C
to +85 °C
amb
T
amb
= +25 °C
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
MIN
MAX
V
Input clamp voltage
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
= 4.5 V; I = –18 mA
–1.2
–1.2
V
V
V
V
V
V
IK
IK
= 4.5 V; I = –3 mA; V = V or V
2.5
3.0
2.0
2.9
3.4
2.5
3.0
2.0
OH
I
IL
IH
IH
V
OH
HIGH-level output voltage
= 5.0 V; I = –3 mA; V = V or V
OH
I
IL
= 4.5 V; I = –32 mA; V = V or V
IH
2.4
OH
I
IL
V
OL
LOW-level output voltage
= 4.5 V; I = 64 mA; V = V or V
IH
0.36
0.13
0.55
0.55
0.55
0.55
OL
I
IL
3
V
RST
Power-up output voltage
= 5.5 V; I = 1 mA; V = GND or V
O I CC
Input leakage
current
Control
pins
"0.01
"2.0
"1.0
I
V
= 5.5 V; V = GND or 5.5 V
±1.0
±100
±50
±1.0
±100
±50
µA
µA
µA
I
CC
I
I
Power-off leakage current
Power-up/down 3-State
V
V
= 0.0 V; V or V ≤ 4.5 V
OFF
CC
O
I
= 2.1 V; V = 0.0 V or V
;
CC
CC
O
I
PU/PD
4
output current
V = GND or V ; V = Don’t care
I
CC
OE
I
+ I
+ I
3-State output High current
3-State output Low current
Output High leakage current
V
V
V
V
V
V
V
= 5.5 V; V = 5.5 V; V = V or V
1.0
–1.0
1.0
10
–10
50
10
–10
50
µA
µA
IH
OZH
OZL
CC
CC
CC
CC
CC
CC
CC
O
I
IL
IH
IH
I
= 5.5 V; V = 0.0 V; V = V or V
O I IL
IL
I
= 5.5 V; V = 5.5 V; V = GND or V
CC
µA
CEX
O
I
1
I
O
Output current
= 5.5 V; V = 2.5 V
–50
–100
0.55
9
–200
2
–50
–200
2
mA
mA
mA
O
I
= 5.5 V; Outputs HIGH, V = GND or V
CCH
I
CC
I
= 5.5 V; Outputs LOW, V = GND or V
19
19
CCL
I
CC
Quiescent supply current
Additional supply current
= 5.5 V; Outputs 3–State;
I
0.55
5.0
2
2
mA
CCZ
V = GND or V
I
CC
V
CC
= 5.5 V; one input at 3.4 V,
∆I
CC
50
50
µA
2
per input pin
other inputs at V or GND
CC
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4 V.
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
4. This parameter is valid for any V between 0 V and 2.1 V, with a transition time of up to 10 msec. From V = 2.1 V to V = 5 V ± 10% a
CC
CC
CC
transition time of up to 100 µsec is permitted.
6
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
AC CHARACTERISTICS
GND = 0 V, t = t = 2.5 ns, C = 50 pF, R = 500 Ω
R
F
L
L
LIMITS
T
V
= +25 °C
= +5.0 V
T
= –40 °C to +85 °C
amb
CC
amb
V
SYMBOL
PARAMETER
WAVEFORM
UNIT
= +5.0 V ±0.5 V
CC
MIN
TYP
MAX
MIN
MAX
t
t
Propagation delay
nAx to nBx, nBx to nAx
1.0
1.0
2.5
2.2
3.3
4.4
1.0
1.0
3.8
5.1
PLH
PHL
2
ns
ns
ns
ns
ns
ns
t
t
Propagation delay
LEBA to nAx, LEAB to nBx
1.0
1.2
3.1
3.0
4.3
4.8
1.0
1.2
5.2
5.6
PLH
PHL
1, 2
t
Output enable time
OEBA to nAx, OEAB to nBx
4
5
1.0
1.1
3.3
3.3
4.3
5.9
1.0
1.1
5.2
7.0
PZH
t
PZL
t
Output disable time
OEBA to nAx, OEAB to nBx
4
5
1.9
1.6
3.5
2.6
5.0
4.2
1.9
1.6
5.7
4.6
PHZ
t
PLZ
t
Output enable time
EBA to nAx, EAB to nBx
4
5
1.0
1.2
3.4
3.4
4.9
6.5
1.0
1.2
6.2
7.8
PZH
t
PZL
t
Output disable time
EBA to nAx, EAB to nBx
4
5
2.0
1.7
3.4
2.6
5.6
5.1
2.0
1.7
6.6
5.4
PHZ
t
PLZ
AC SETUP REQUIREMENTS
GND = 0 V, t = t = 2.5 ns, C = 50 pF, R = 500 Ω
R
F
L
L
LIMITS
T
V
= +25 °C
= +5.0 V
T
= –40 °C to +85 °C
amb
CC
amb
V
SYMBOL
PARAMETER
WAVEFORM
UNIT
= +5.0 V ±0.5 V
CC
MIN
TYP
MIN
t (H)
t (L)
s
Set-up time
nAx to LEAB, nBx to LEBA
1.5
3.5
0.4
–0.1
1.5
3.5
s
3
3
3
ns
ns
ns
t (H)
Hold time
nAx to LEAB, nBx to LEBA
1.5
2.0
0.2
–0.3
1.5
2.0
h
t (L)
h
t (H)
Set-up time
nAx to EAB, nBx to EBA
1.5
3.5
0.2
–0.3
1.5
3.5
s
t (L)
s
t (H)
t (L)
h
Hold time
nAx to EAB, nBx to EBA
1.5
2.0
0.3
–0.2
1.5
2.0
h
3
3
ns
ns
t (L)
w
Latch enable pulse width, LOW
4.0
3.1
4.0
AC WAVEFORMS
V
M
= 1.5 V, V = GND to 3.0 V
IN
V
V
IN
IN
V
V
V
V
M
M
t
M
M
t
t
t
PLH
PHL
PHL
PLH
V
V
OUT
OUT
V
V
V
V
M
M
M
M
SH00040
SH00041
Waveform 1. Propagation Delay for Inverting Output
Waveform 2. Propagation Delay for Non-Inverting Output
7
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
AC WAVEFORMS (Continued)
V
M
= 1.5 V, V = GND to 3.0 V
IN
nAx, nBx
nOEAB, nOEBA,
nEAB, nEBA
V
V
V
V
V
M
M
M
M
V
V
M
M
t
t (H)
t (L)
s
t
(H)
t (L)
h
s
h
t
PZL
PLZ
nLEAB, nLEBA,
nEAB, nEBA
V
nAx, nBx
V
M
M
M
V
V
+0.3V
OL
t
(L)
w
OL
NOTE: The shaded areas indicate when the input is permitted
to change for predictable output performance.
SH00042
SH00044
Waveform 3. Data Setup and Hold Times
and Latch Enable Pulse Width
Waveform 5. 3-State Output Enable Time to Low Level and
Output Disable Time from Low Level
nOEAB, nOEBA,
nEAB, nEBA
V
V
M
M
t
t
PZH
PHZ
V
OH
V
–0.3V
OH
V
nAx, nBx
M
0V
SH00043
Waveform 4. 3-State Output Enable Time to High Level and
Output Disable Time from High Level
TEST CIRCUIT AND WAVEFORMS
t
W
V
AMP (V)
CC
90%
90%
7.0V
NEGATIVE
PULSE
V
V
M
M
10%
10%
90%
R
L
0V
(t
V
V
OUT
IN
PULSE
GENERATOR
D.U.T.
t
t
(t
(t
)
t
TLH
)
THL
F
R
)
t
(t )
R
R
L
C
TLH
R
THL F
T
L
AMP (V)
90%
M
POSITIVE
PULSE
V
V
M
Test Circuit for 3-State Outputs
10%
10%
t
W
0V
SWITCH POSITION
V
= 1.5V
M
TEST
SWITCH
Input Pulse Definition
t
closed
PLZ
PZL
t
closed
open
All other
INPUT PULSE REQUIREMENTS
DEFINITIONS
R = Load resistor; see AC CHARACTERISTICS for value.
L
FAMILY
Amplitude
3.0V
Rep. Rate
1MHz
t
t
t
F
W
R
C = Load capacitance includes jig and probe capacitance;
L
see AC CHARACTERISTICS for value.
74ABT/H16
500ns 2.5ns 2.5ns
R = Termination resistance should be equal to Z
T
of
OUT
pulse generators.
SA00018
8
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
SSOP56: plastic shrink small outline package; 56 leads; body width 7.5 mm
SOT371-1
9
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
TSSOP56: plastic thin shrink small outline package; 56 leads; body width 6.1 mm
SOT364-1
10
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
NOTES
11
2002 Apr 03
Philips Semiconductors
Product data
16-bit latched transceiver with dual enable
(3-State)
74ABT16543
Data sheet status
Product
status
Definitions
[1]
Data sheet status
[2]
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Koninklijke Philips Electronics N.V. 2002
Contact information
All rights reserved. Printed in U.S.A.
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 04-02
9397 750 09692
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Document order number:
Philips
Semiconductors
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