935203330118 [NXP]

ABT SERIES, DUAL 8-BIT DRIVER, TRUE OUTPUT, PDSO48, 6.10 MM, PLASTIC, MO-153, SOT-362-1, TSSOP-48;
935203330118
型号: 935203330118
厂家: NXP    NXP
描述:

ABT SERIES, DUAL 8-BIT DRIVER, TRUE OUTPUT, PDSO48, 6.10 MM, PLASTIC, MO-153, SOT-362-1, TSSOP-48

驱动 光电二极管 输出元件
文件: 总11页 (文件大小:98K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
74ABT16373B  
16-bit transparent latch (3-State)  
Product data  
2004 Feb 27  
Replaces 74ABT16373B/74ABTH16373B of 1998 Feb 27  
Philips  
Semiconductors  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
FEATURES  
PIN CONFIGURATION  
16-bit transparent latch  
1
2
48  
47  
1OE  
1Q0  
1Q1  
GND  
1Q2  
1Q3  
1E  
Multiple V and GND pins minimize switching noise  
CC  
1D0  
Power-up 3-State  
3
46 1D1  
GND  
1D2  
4
45  
44  
Live insertion/extraction permitted  
Power-up reset  
5
6
43 1D3  
3-State output buffers  
V
7
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
V
CC  
CC  
Output capability: +64 mA/–32 mA  
8
1Q4  
1Q5  
1D4  
1D5  
9
I  
–19 mA maximum  
CCL  
GND  
GND  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
Latch-up protection exceeds 500 mA per JEDEC Std 17  
1Q6  
1Q7  
2Q0  
2Q1  
GND  
1D6  
1D7  
2D0  
2D1  
GND  
ESD protection exceeds 2000 V per MIL STD 883 Method 3015  
and 200 V per Machine Model  
DESCRIPTION  
The 74ABT16373B high-performance BiCMOS device combines  
low static and dynamic power dissipation with high speed and high  
output drive.  
2Q2  
2Q3  
2D2  
2D3  
V
V
CC  
CC  
The 74ABT16373B device is a dual octal transparent latch coupled  
to two sets of eight 3-State output buffers. The two sections of the  
device are controlled independently by Enable (nE) and Output  
Enable (nOE) control gates.  
2Q4  
2D4  
29 2D5  
2Q5 20  
21  
22  
23  
24  
28  
27  
26  
25  
GND  
2Q6  
GND  
2D6  
The data on each set of D inputs are transferred to the latch outputs  
when the Latch Enable (nE) input is HIGH. The latch remains  
transparent to the data inputs while nE is HIGH, and stores the data  
that is present one set-up time before the HIGH-to-LOW enable  
transition.  
2Q7  
2OE  
2D7  
2E  
SA00379  
The 3-State output buffers are designed to drive heavily loaded  
3-State buses, MOS memories, or MOS microprocessors. Each  
active-LOW Output Enable (nOE) controls eight 3-State buffers  
independent of the latch operation.  
When nOE is LOW, the latched or transparent data appears at the  
outputs. When nOE is HIGH, the outputs are in the high-impedance  
“OFF” state, which means they will neither drive nor load the bus.  
QUICK REFERENCE DATA  
CONDITIONS  
= 25 °C; GND = 0 V  
SYMBOL  
PARAMETER  
TYPICAL  
UNIT  
T
amb  
t
t
Propagation delay  
Dn to Qn  
2.5  
2.0  
PLH  
PHL  
C = 50 pF; V = 5 V  
ns  
L
CC  
C
Input capacitance  
Output capacitance  
V = 0 V or V  
CC  
4
7
pF  
pF  
IN  
I
C
V = 0 V or V ; 3-State  
O CC  
OUT  
CCZ  
I
Outputs disabled; V = 5.5 V  
500  
8
µA  
mA  
CC  
Quiescent supply current  
I
Outputs low; V = 5.5 V  
CC  
CCL  
ORDERING INFORMATION  
T
amb  
= –40 °C to +85 °C  
Package  
Name  
Type number  
Description  
Version  
74ABT16373BDL  
SSOP48  
TSSOP48  
plastic shrink small outline package; 48 leads; body width 7.5 mm  
plastic thin shrink small outline package; 48 leads; body width 6.1 mm  
SOT370-1  
SOT362-1  
74ABT16373BDGG  
2
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
PIN DESCRIPTION  
LOGIC SYMBOL (IEEE/IEC)  
PIN NUMBER  
SYMBOL  
FUNCTION  
Data inputs  
47, 46, 44, 43, 41, 40,  
38, 37, 36, 35, 33, 32,  
30, 29, 27, 26  
1
1EN  
C3  
1OE  
1E  
1D0 – 1D7  
2D0 – 2D7  
48  
24  
25  
2EN  
C4  
2OE  
2E  
2, 3, 5, 6, 8, 9, 11, 12,  
13, 14, 16, 17, 19, 20,  
22, 23  
1Q0 – 1Q7  
2Q0 – 2Q7  
Data outputs  
47  
46  
44  
43  
41  
40  
38  
37  
36  
2
3
3D  
1
1D0  
1D1  
1D2  
1D3  
1D4  
1D5  
1D6  
1D7  
2D0  
1Q0  
1Q1  
1Q2  
1Q3  
1Q4  
1Q5  
1Q6  
1Q7  
2Q0  
Output enable inputs  
(active-LOW)  
1, 24  
1OE, 2OE  
1E, 2E  
GND  
5
Enable inputs  
(active-HIGH)  
48, 25  
6
8
4, 10, 15, 21, 28, 34,  
39, 45  
Ground (0 V)  
9
11  
12  
13  
7, 18, 31, 42  
V
CC  
Positive supply voltage  
LOGIC SYMBOL  
4D  
2
35  
33  
32  
30  
29  
27  
26  
14  
16  
17  
19  
20  
22  
23  
2D1  
2D2  
2D3  
2D4  
2D5  
2D6  
2D7  
2Q1  
2Q2  
2Q3  
2Q4  
2Q5  
2Q6  
2Q7  
47 46 44 43 41 40 38 37  
1D0 1D1 1D2 1D3 1D4 1D5 1D6 1D7  
48  
1
1E  
1OE  
1Q0 1Q1 1Q2 1Q3 1Q4 1Q5 1Q6 1Q7  
SA00380  
2
3
5
6
8
9
11 12  
36 35 33 32 30 29 27 26  
2D0 2D21 2D2 2D3 2D4 2D5 2D6 2D7  
25  
24  
2E  
2OE  
2Q0 2Q1 2Q2 2Q3 2Q4 2Q5 2Q6 2Q7  
13 14 16 17 19 20 22 23  
SA00044  
LOGIC DIAGRAM  
nD0  
nD1  
nD2  
nD3  
nD4  
nD5  
nD6  
nD7  
D
E
D
E
D
E
D
E
D
E
D
E
D
E
D
Q
Q
Q
Q
Q
Q
Q
E
Q
nE  
nOE  
nQ0  
nQ1  
nQ2  
nQ3  
nQ4  
nQ5  
nQ6  
nQ7  
SA00046  
3
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
FUNCTION TABLE  
INPUTS  
OUTPUTS  
nQ0 – nQ7  
INTERNAL  
REGISTER  
OPERATING MODE  
nOE  
nE  
nDx  
L
L
H
H
L
H
L
H
L
H
Enable and read register  
L
L
i
h
L
H
L
H
Latch and read register  
Hold  
L
L
X
NC  
NC  
H
H
L
H
X
Dn  
NC  
Dn  
Z
Z
Disable outputs  
H
h
L
l
=
=
=
=
HIGH voltage level  
HIGH voltage level one set-up time prior to the HIGH-to-LOW E transition  
LOW voltage level  
LOW voltage level one set-up time prior to the HIGH-to-LOW E transition  
NC= No change  
X
Z
=
=
=
Don’t care  
High-impedance “off” state  
HIGH-to-LOW E transition  
1, 2  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
DC supply voltage  
CONDITIONS  
RATING  
–0.5 to +7.0  
–18  
UNIT  
V
V
CC  
I
IK  
DC input diode current  
V < 0 V  
I
mA  
V
3
V
I
DC input voltage  
–1.2 to +7.0  
–50  
I
DC output diode current  
V
O
< 0 V  
mA  
V
OK  
3
V
OUT  
DC output voltage  
output in Off or HIGH state  
output in LOW state  
–0.5 to +5.5  
128  
I
DC output current  
mA  
OUT  
output in HIGH state  
–64  
T
stg  
Storage temperature range  
–65 to 150  
°C  
NOTES:  
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the  
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability.  
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction  
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.  
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
RECOMMENDED OPERATING CONDITIONS  
LIMITS  
SYMBOL  
PARAMETER  
UNIT  
MIN  
4.5  
0
MAX  
V
CC  
DC supply voltage  
5.5  
V
V
V
I
Input voltage  
V
CC  
V
HIGH-level input voltage  
LOW-level Input voltage  
HIGH-level output current  
LOW-level output current  
Input transition rise or fall rate  
Operating free-air temperature range  
2.0  
V
IH  
V
0.8  
–32  
64  
V
IL  
I
mA  
mA  
ns/V  
°C  
OH  
I
OL  
t/v  
0
10  
T
amb  
–40  
+85  
4
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
DC ELECTRICAL CHARACTERISTICS  
LIMITS  
= +25 °C  
T
= –40 °C  
to +85 °C  
amb  
T
amb  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN  
TYP  
–0.9  
2.9  
MAX  
–1.2  
MIN  
MAX  
–1.2  
V
Input clamp voltage  
V
V
V
V
V
V
V
V
= 4.5 V; I = –18 mA  
2.5  
3.0  
2.0  
V
V
IK  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
IK  
= 4.5 V; I = –3 mA; V = V or V  
2.5  
3.0  
2.0  
OH  
I
IL  
IH  
IH  
V
OH  
High-level output voltage  
Low-level output voltage  
= 5.0 V; I = –3 mA; V = V or V  
3.4  
V
OH  
I
IL  
= 4.5 V; I = –32 mA; V = V or V  
IH  
2.4  
V
OH  
I
IL  
V
OL  
= 4.5 V; I = 64 mA; V = V or V  
IH  
0.42  
0.13  
0.55  
0.55  
±1  
0.55  
0.55  
±1  
V
OL  
I
IL  
3
V
RST  
Power-up output voltage  
Input leakage current  
= 5.5 V; I = 1 mA; V = GND or V  
CC  
V
O
I
I
= 5.5 V; V = V or GND  
±0.01  
±5.0  
µA  
µA  
I
I
CC  
I
Power-off leakage current  
Power-up/down 3-State  
= 0.0 V; V or V 4.5 V  
±100  
±100  
OFF  
O
I
V
CC  
V
OE  
= 2.1 V; V = 0.5 V; V = GND or V  
;
CC  
O
I
I
/I  
±5.0  
±50  
±50  
µA  
µA  
PU PD  
4
output current  
= GND  
3-State output HIGH  
current  
I
V
CC  
= 5.5 V; V = 5.5 V; V = V or V  
0.5  
10  
10  
OZH  
O
I
IL  
IH  
IH  
I
3-State output LOW current  
V
V
= 5.5 V; V = 0.0 V; V = V or V  
–0.5  
–70  
–10  
–10  
µA  
OZL  
CC  
O
I
IL  
1
I
O
Output current  
= 5.5 V; V = 2.5 V  
–50  
–180  
–50  
–180  
mA  
CC  
O
Output HIGH leakage  
current  
I
V
V
= 5.5 V; V = 5.5 V; V = GND or V  
CC  
0.1  
0.5  
8
50  
2
50  
2
µA  
mA  
mA  
mA  
µA  
CEX  
CCH  
CC  
O
I
= 5.5 V; Outputs HIGH;  
CC  
I
V = GND or V  
I
CC  
V
CC  
= 5.5 V; Outputs Low;  
I
Quiescent supply current  
19  
2
19  
2
CCL  
V = GND or V  
I
CC  
V
CC  
= 5.5 V; Outputs 3-State;  
I
0.5  
5
CCZ  
V = GND or V  
I
CC  
Additional supply current  
V
CC  
= 5.5 V; one input at 3.4 V, other inputs  
CC  
I  
CC  
100  
100  
2
per input pin  
at V or GND  
NOTES:  
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.  
2. This is the increase in supply current for each input at 3.4 V.  
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.  
4. This parameter is valid for any V between 0 V and 2.1 V, with a transition time of up to 10 msec. From V = 2.1 to V = 5 V ± 10% a  
CC  
CC  
CC  
transition time of up to 100 µsec is permitted.  
5. Unused pins at V or GND.  
CC  
5
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
AC CHARACTERISTICS  
GND = 0 V, t = t = 2.5 ns, C = 50 pF, R = 500 Ω  
R
F
L
L
LIMITS  
T
V
= +25 °C  
= +5.0 V  
T
= –40 °C to +85 °C  
amb  
CC  
amb  
V
SYMBOL  
PARAMETER  
WAVEFORM  
UNIT  
= +5.0V ± 0.5 V  
CC  
MIN  
TYP  
MAX  
MIN  
MAX  
t
t
Propagation delay  
nDx to nQx  
1.5  
1.1  
2.5  
2.0  
3.8  
3.1  
1.5  
1.1  
4.4  
3.8  
PLH  
PHL  
2
1
ns  
ns  
ns  
ns  
t
t
Propagation delay  
nE to nQx  
1.6  
1.3  
2.5  
2.1  
3.8  
3.1  
1.6  
1.3  
4.4  
3.6  
PLH  
PHL  
t
t
Output enable time  
to HIGH and LOW level  
4
5
1.2  
1.3  
2.3  
2.3  
3.5  
3.5  
1.2  
1.3  
4.6  
4.5  
PZH  
PZL  
t
t
Output disable time  
from HIGH and LOW level  
4
5
1.9  
1.7  
3.1  
2.6  
4.5  
3.8  
1.9  
1.7  
5.3  
4.2  
PHZ  
PLZ  
AC SET-UP REQUIREMENTS  
GND = 0 V, t = t = 2.5 ns, C = 50 pF, R = 500 Ω  
R
F
L
L
LIMITS  
T
V
= +25 °C  
= +5.0 V  
T
= –40 °C to +85 °C  
amb  
CC  
amb  
V
SYMBOL  
PARAMETER  
WAVEFORM  
UNIT  
= +5.0 V ± 0.5 V  
CC  
MIN  
TYP  
MIN  
t (H)  
t (L)  
s
Set-up time, HIGH or LOW  
nDx to nE  
1.0  
1.0  
0.0  
0.3  
1.0  
1.0  
s
3
3
1
ns  
ns  
ns  
t (H)  
Hold time, HIGH or LOW  
nDx to nE  
0.5  
0.5  
–0.2  
0.0  
0.5  
0.5  
h
t (L)  
h
Enable pulse width  
HIGH  
t (H)  
w
2.5  
1.0  
2.5  
AC WAVEFORMS  
For all waveforms, V = 1.5 V.  
M
V
V
V
V
V
M
nE  
M
M
M
M
t
nDx  
nQx  
t
t
(H)  
PLH  
PHL  
w
t
t
PLH  
PHL  
V
V
M
M
V
V
nQx  
M
M
SA00047  
SA00048  
Waveform 1. Propagation Delay, Enable to Output, and  
Enable Pulse Width  
Waveform 2. Propagation Delay for Data to Outputs  
6
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
V
V
V
V
M
nDx  
nE  
M
M
M
nOE  
nQx  
V
V
M
M
t (H)  
s
t (L)  
s
t (H)  
h
t (L)  
h
t
t
PLZ  
PZL  
V
V
M
M
V
M
V
V
+ 0.3V  
OL  
OL  
NOTE: The shaded areas indicate when the input is per-  
mitted to change for predictable output performance.  
SA00051  
SA00049  
Waveform 3. Data Set-up and Hold Times  
Waveform 5. 3-State Output Enable Time to LOW Level and  
Output Disable Time from LOW Level  
V
V
M
nOE  
nQx  
M
t
t
PHZ  
PZH  
V
V
OH  
OH  
– 0.3V  
0V  
V
M
SA00050  
Waveform 4. 3-State Output Enable Time to HIGH Level and  
Output Disable Time from HIGH Level  
TEST CIRCUIT AND WAVEFORM  
t
W
V
AMP (V)  
CC  
90%  
90%  
7.0 V  
NEGATIVE  
PULSE  
V
V
M
M
10%  
10%  
90%  
R
L
0 V  
(t  
V
V
OUT  
IN  
PULSE  
GENERATOR  
D.U.T.  
t
t
(t  
(t  
)
t
TLH  
)
THL  
F
R
)
t
(t )  
R
R
L
C
TLH  
R
THL F  
T
L
AMP (V)  
90%  
M
POSITIVE  
PULSE  
V
V
M
Test Circuit for 3-State Outputs  
10%  
10%  
t
W
0 V  
SWITCH POSITION  
V
= 1.5 V  
M
TEST  
SWITCH  
Input Pulse Definition  
t
t
closed  
PLZ  
closed  
open  
PZL  
All other  
INPUT PULSE REQUIREMENTS  
DEFINITIONS  
R = Load resistor; see AC CHARACTERISTICS for value.  
L
FAMILY  
Amplitude  
3.0 V  
Rep. Rate  
1 MHz  
t
t
t
F
W
R
C = Load capacitance includes jig and probe capacitance;  
L
see AC CHARACTERISTICS for value.  
74ABT  
500 ns 2.5 ns 2.5 ns  
R = Termination resistance should be equal to Z  
T
of  
OUT  
pulse generators.  
SA00654  
7
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
SSOP48: plastic shrink small outline package; 48 leads; body width 7.5 mm  
SOT370-1  
8
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
TSSOP48: plastic thin shrink small outline package; 48 leads; body width 6.1 mm  
SOT362-1  
9
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
REVISION HISTORY  
Rev  
Date  
Description  
_3  
20040227  
Product data (9397 750 12821); 853-1751 ECN 01–A15429 of 27 January 2004.  
Replaces data sheet 74ABT_H16373B_2 of 1998 Feb 27 (9397 750 03491).  
Modifications:  
Delete all references to 74ABTH16373B (product discontinued).  
_2  
_1  
19980227  
19950803  
Product specification (9397 750 03491); ECN 853-1751 19027 of 27 February 1998.  
Supersedes data of 1995 Aug 03.  
10  
2004 Feb 27  
Philips Semiconductors  
Product data  
16-bit transparent latch (3-State)  
74ABT16373B  
Data sheet status  
Product  
status  
Definitions  
[1]  
Level  
Data sheet status  
[2] [3]  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development.  
Philips Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Product data  
Qualification  
Production  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1] Please consult the most recently issued data sheet before initiating or completing a design.  
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL  
http://www.semiconductors.philips.com.  
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
LimitingvaluesdefinitionLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given  
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no  
representation or warranty that such applications will be suitable for the specified use without further testing or modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be  
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree  
to fully indemnify Philips Semiconductors for any damages resulting from such application.  
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described  
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated  
viaaCustomerProduct/ProcessChangeNotification(CPCN).PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveys  
nolicenseortitleunderanypatent, copyright, ormaskworkrighttotheseproducts, andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,  
copyright, or mask work right infringement, unless otherwise specified.  
Koninklijke Philips Electronics N.V. 2004  
Contact information  
All rights reserved. Printed in U.S.A.  
For additional information please visit  
http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
Date of release: 01-04  
9397 750 12985  
For sales offices addresses send e-mail to:  
sales.addresses@www.semiconductors.philips.com.  
Document order number:  
Philips  
Semiconductors  

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