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935300955115 [NXP]

Differential Multiplexer;
935300955115
型号： 935300955115
厂家： NXP    NXP
描述：

Differential Multiplexer
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NX3DV221  
High-speed USB 2.0 switch with enable  
Rev. 4 — 19 June 2013  
Product data sheet  
1. General description  
The NX3DV221 is a high-bandwidth switch designed for the switching of high-speed USB  
2.0 signals in handset and consumer applications. These applications could be cell  
phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os.  
The wide bandwidth (1 GHz) of this switch allows signal to pass with minimum edge and  
phase distortion. The device multiplexes differential outputs from a USB host device to  
one of two corresponding outputs. The switch is bidirectional and offers little or no  
attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew  
and high channel-to-channel noise isolation, and is compatible with various standards,  
such as high-speed USB 2.0 (480 Mbps).  
2. Features and benefits  
Wide supply voltage range from 2.3 V to 3.6 V  
Switch voltage accepts signals up to 5.5 V  
1.8 V control logic at VCC = 3.6 V  
Low-power mode when OE is HIGH (2 A maximum)  
6 (maximum) ON resistance  
0.1 (typical) ON resistance mismatch between channels  
6 pF (typical) ON-state capacitance  
High bandwidth (1.0 GHz typical)  
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 8000 V  
CDM JESD22-C101E exceeds 1000 V  
HBM exceeds 12000 V for I/O to GND protection  
Specified from 40 C to +85 C  
3. Applications  
Routes signals for USB 1.0, 1.1 and 2.0  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
4. Ordering information  
Table 1.  
Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
NX3DV221GM  
NX3DV221TK  
40 C to +85 C  
XQFN10  
plastic extremely thin quad flat package; no leads;  
10 terminals; body 2 1.55 0.5 mm  
SOT1049-3  
40 C to +85 C  
HVSON10 plastic thermal enhanced very thin small outline  
SOT650-2  
package; no leads; 10 terminals; 3 3 0.85 mm  
5. Marking  
Table 2.  
Marking  
Type number  
NX3DV221GM  
NX3DV221TK  
Marking code[1]  
x21  
x21  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
6. Functional diagram  
8
7
1
D+  
D-  
1D+  
2
3
1D-  
2D+  
V
CC  
4
2D-  
CHARGE  
PUMP  
6
9
OE  
S
CONTROLLOGIC  
001aao078  
Fig 1. Logic symbol  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
2 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
7. Pinning information  
7.1 Pinning  
1;ꢀ'9ꢁꢁꢂ  
1;ꢀ'9ꢁꢁꢂ  
WHUPLQDOꢀꢃ  
LQGH[ꢀDUHD  
ꢃ'ꢂ  
ꢃ'ꢁ  
ꢄ'ꢂ  
ꢄ'ꢁ  
ꢃ
ꢄ
ꢅ
ꢆ
ꢊ
ꢉ
ꢈ
ꢇ
6
ꢃ
ꢄ
ꢅ
ꢆ
ꢋ
ꢃꢌ  
ꢊ
ꢃ'ꢂ  
ꢃ'ꢁ  
9
6
&&  
'ꢂ  
'ꢁ  
2(  
ꢉ
ꢄ'ꢂ  
ꢄ'ꢁ  
'ꢂ  
'ꢁ  
ꢈ
ꢇ
*1'  
2(  
DDDꢀꢁꢁꢂꢁꢃꢃ  
DDDꢀꢁꢁꢄꢅꢆꢄ  
7UDQVSDUHQWꢀWRSꢀYLHZ  
7UDQVSDUHQWꢀWRSꢀYLHZ  
Fig 2. Pin configuration SOT1049-3 (XQFN10)  
Fig 3. Pin configuration SOT650-2 (HVSON10)  
7.2 Pin description  
Table 3.  
Symbol  
1D+  
1D  
2D+  
2D  
GND  
OE  
Pin description  
Pin  
Description  
1
2
3
4
5
6
7
8
9
10  
independent input or output  
independent input or output  
independent input or output  
independent input or output  
ground (0 V)  
output enable input (active LOW)  
common input or output  
common input or output  
select input  
D  
D+  
S
VCC  
supply voltage  
8. Functional description  
Table 4.  
Function table[1]  
Input  
Channel  
S
L
OE  
L
D+ = 1D+; D= 1D  
D+ = 2D+; D= 2D  
switches off  
H
X
L
H
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
3 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
9. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol  
VCC  
VI  
Parameter  
Conditions  
S, OE input  
VI < 0.5 V  
Min  
0.5  
0.5  
0.5  
50  
50  
-
Max  
+4.6  
+7.0  
+7.0  
-
Unit  
V
supply voltage  
input voltage  
[1]  
[2]  
V
VSW  
IIK  
switch voltage  
input clamping current  
V
mA  
mA  
mA  
mA  
mA  
C  
ISK  
switch clamping current VI < 0.5 V  
switch current  
-
ISW  
120  
+100  
-
ICC  
supply current  
-
IGND  
Tstg  
Ptot  
ground current  
100  
65  
-
storage temperature  
+150  
250  
total power dissipation  
Tamb = 40 C to +125 C  
mW  
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.  
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.  
10. Recommended operating conditions  
Table 6.  
Recommended operating conditions  
Symbol Parameter  
Conditions  
Min  
2.3  
0
Max  
3.6  
Unit  
V
VCC  
VI  
supply voltage  
input voltage  
S, OE input  
VCC  
5.5  
V
VSW  
Tamb  
switch voltage  
ambient temperature  
0
V
40  
+85  
C  
11. Static characteristics  
Table 7.  
Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground 0 V).  
Symbol Parameter  
Conditions  
Tamb = 25 C  
Tamb =-40 C to +85 C Unit  
Min  
Typ  
Max  
Min  
Max  
VIH  
VIL  
HIGH-level  
input voltage  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V to 3.6 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V to 3.6 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.46VCC  
-
V
V
V
V
V
0.46VCC  
-
LOW-level  
input voltage  
-
-
-
0.25VCC  
0.25VCC  
1.8  
VIK  
II  
input clamping VCC = 2.7 V, 3.6 V;  
voltage  
II = 18 mA  
input leakage  
current  
S, OE input;  
VCC = 0 V, 2.7 V, 3.6;  
VI = GND to 3.6 V  
-
0.01  
-
-
1  
A  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
4 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
Table 7.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground 0 V).  
Symbol Parameter  
Conditions  
Tamb = 25 C  
Tamb =-40 C to +85 C Unit  
Min  
Typ  
Max  
Min  
Max  
IOFF  
power-off  
leakage current  
per pin; VCC = 0 V  
VSW = 0 V to 2.7 V  
VSW = 0 V to 3.6 V  
VSW = 0 V to 5.25 V  
nD+ and nD- ports;  
-
-
-
0.01  
0.01  
0.01  
-
-
-
-
-
-
2.0  
2.0  
3.0  
A  
A  
A  
IS(OFF)  
OFF-state  
leakage current see Figure 4  
VCC = 2.7 V, 3.6 V  
-
-
-
-
1  
A  
ICC  
supply current VCC = 2.7 V, 3.6 V  
OE = GND  
-
-
18.5  
0.01  
-
-
-
-
30  
2
A  
A  
OE = VCC (low-power  
mode)  
ICC  
additional  
S, OE input;  
supply current one input at 1.8 V;  
other inputs at GND or VCC  
VCC = 2.7 V  
VCC = 3.6 V  
-
-
-
0.8  
12.5  
1
-
-
-
-
-
-
1.8  
20  
A  
A  
pF  
CI  
input  
VSW = GND or VCC  
VCC = 2.5 V, 3.3 V  
;
;
;
2.5  
capacitance  
CS(OFF) OFF-state  
capacitance  
VSW = GND or VCC  
VCC = 2.5 V, 3.3 V  
-
-
3
6
-
-
-
-
5.0  
7.5  
pF  
pF  
CS(ON)  
ON-state  
VSW = GND or VCC  
VCC = 2.5 V, 3.3 V  
capacitance  
11.1 Test circuits  
V
CC  
switch  
S
OE  
V
IL  
V
1
2
IH  
S
1Dn  
2Dn  
1
2
V
IL  
or V  
V
IH  
IH  
V
V
IH  
IH  
Dn  
switch  
I
S
OE  
GND  
V
V
O
I
001aao080  
VI = 0 V; VO = 0 V to 5.25 V  
Fig 4. Test circuit for measuring OFF-state leakage current  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
5 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
11.2 ON resistance  
Table 8.  
ON resistance  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 6.  
Symbol Parameter  
Conditions  
Tamb = 40 C to +85 C  
Tamb = 40 C to +85 C Unit  
Min  
Typ[1]  
Max  
Min  
Max  
RON  
ON resistance  
VCC = 2.3 V, 3.0 V  
see Figure 5  
VI = 0 V;  
II = 30 mA  
-
-
3.6  
4.3  
-
-
-
-
6
7
VI = 2.4 V;  
II = 15 mA  
[2]  
[3]  
RON  
ON resistance  
mismatch  
between channels  
VCC = 2.3 V, 3.0 V  
VI = 0 V;  
II = 30 mA  
-
-
0.1  
0.1  
-
-
-
-
-
-
VI = 1.7 V;  
II = 15 mA  
RON(flat)  
ON resistance  
(flatness)  
VCC = 2.3 V, 3.0 V;  
VI = 0 V to VCC  
II = 30 mA  
-
-
0.8  
0.7  
-
-
-
-
-
-
II = 15 mA  
[1] Typical values are measured at Tamb = 25 C.  
[2] Measured at identical VCC, temperature and input voltage.  
[3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and  
temperature.  
11.3 ON resistance test circuit and waveforms  
V
V
CC  
switch  
S
OE  
V
SW  
V
V
IL  
1
2
IL  
S
1Dn  
2Dn  
1
2
V
IL  
or V  
IH  
V
IH  
V
IL  
Dn  
switch  
OE  
GND  
V
IL  
V
I
SW  
I
001aao081  
RON = VSW / ISW  
.
Fig 5. Test circuit for measuring ON resistance  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
6 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
001aao082  
5.0  
R
ON  
(Ω)  
4.5  
4.0  
3.5  
3.0  
0
1
2
3
V (V)  
I
Fig 6. ON resistance as a function of input voltage  
12. Dynamic characteristics  
Table 9.  
Dynamic characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 10.  
Symbol Parameter  
Conditions  
Tamb = 25 C  
Tamb = 40 C to +85 C Unit  
Min Typ[1] Max  
Min  
Max  
[2][3]  
tpd  
propagation delay Dn to nDn or nDn to Dn;  
see Figure 7  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
-
-
0.25  
0.25  
-
-
-
-
-
-
ns  
ns  
[3]  
ten  
enable time  
S to Dn, nDn;  
see Figure 9  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
-
-
-
-
-
-
-
-
50  
30  
ns  
ns  
[3]  
OE to Dn, nDn;  
see Figure 9  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
-
-
-
-
-
-
-
-
32  
17  
ns  
ns  
[3]  
tdis  
disable time  
S to Dn, nDn;  
see Figure 9  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
-
-
-
-
-
-
-
-
23  
12  
ns  
ns  
[3]  
OE to Dn, nDn;  
see Figure 9  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
-
-
-
-
-
-
-
-
12  
10  
ns  
ns  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
7 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
Table 9.  
Dynamic characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 10.  
Symbol Parameter  
Conditions  
Tamb = 25 C  
Tamb = 40 C to +85 C Unit  
Min Typ[1] Max  
Min  
Max  
[4]  
[4]  
tsk(o)  
output skew time  
see Figure 8  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
see Figure 7  
-
-
0.1  
0.1  
-
-
-
-
0.2  
0.2  
ns  
ns  
tsk(p)  
pulse skew time  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
-
-
0.1  
0.1  
-
-
-
-
0.2  
0.2  
ns  
ns  
[1] Typical values are measured at Tamb = 25 C and VCC = 2.5 V and 3.3 V respectively.  
[2] The propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified load capacitance,  
when driven by an ideal voltage source (zero output impedance).  
[3] tpd is the same as tPLH and tPHL  
[4] Guaranteed by design.  
.
12.1 Waveforms, test circuit and graphs  
800 mV  
input  
400 mV  
50%  
t
t
PLH  
PHL  
V
OH  
output  
50%  
V
OL  
001aao083  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
tsk(p) = |tPHL tPLH|.  
Fig 7. The data input to output propagation delay times and pulse skew time  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
8 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
800 mV  
input  
50%  
400 mV  
(1)  
PLH  
(1)  
t
t
PHL  
V
OH  
output 1  
output 2  
50%  
V
OL  
t
t
sk(o)  
sk(o)  
V
OH  
50%  
V
OL  
(2)  
PLH  
(2)  
t
PHL  
t
001aao084  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
sk(o) = |tPLH(1) tPLH(2)| or |tPHL(1) tPHL(2)|.  
t
Fig 8. Output skew time  
V
I
S, OE input  
output  
V
V
M
M
GND  
t
en  
t
dis  
V
OH  
V
V
V
X
X
OFF to HIGH  
HIGH to OFF  
GND  
t
en  
t
dis  
V
OH  
V
X
X
output  
HIGH to OFF  
OFF to HIGH  
GND  
001aao085  
Measurement points are given in Table 10.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 9. Enable and disable times  
Table 10. Measurement points  
Supply voltage  
VCC  
Input  
Output  
VX  
VM  
VI  
2.3 V to 3.6 V  
0.5VI  
1. 8 V  
0.9VOH  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
9 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
V
CC  
1Dn  
2Dn  
Dn  
OE  
V
IL  
G
V
V
= V  
CC  
R
C
R
C
L
I
EXT  
L
L
L
GND  
001aao086  
Test data is given in Table 11.  
Definitions test circuit:  
RL = Load resistance.  
CL = Load capacitance including jig and probe capacitance.  
VEXT = External voltage for measuring switching times.  
VI may be connected to S or OE.  
Fig 10. Test circuit for switching times  
Table 11. Test data  
Supply voltage  
VCC  
Input  
VI  
Load  
tr, tf  
CL  
RL  
2.3 V to 3.6 V  
1.8 V  
5 ns  
50 pF  
500   
+ 0.5 V  
-0.5 V  
Time scale (0.25 ns/DIV)  
001aao087  
Fig 11. Eye-pattern 480 Mbps USB signal with no switch.  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
10 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
+ 0.5 V  
-0.5 V  
Time scale (0.25 ns/DIV)  
001aao088  
Fig 12. Eye-pattern 480 Mbps USB signal with switch (normally closed path)  
+ 0.5 V  
-0.5 V  
Time scale (0.25 ns/DIV)  
001aao089  
Fig 13. Eye-pattern 480 Mbps USB signal with switch (normally open path)  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
11 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
12.2 Additional dynamic characteristics  
Table 12. Additional dynamic characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise  
specified); tr = tf 5 ns; Tamb = 25 C.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[1][2]  
[1][2]  
[1][2]  
f(3dB) 3 dB frequency  
RL = 50 ; see Figure 14  
VCC = 2.3 V to 2.7 V  
response  
-
-
1.0  
-
-
GHz  
GHz  
VCC = 3.0 V to 3.6 V  
1.0  
iso  
isolation (OFF-state)  
fi = 250 MHz; RL = 50 ; see Figure 15  
VCC = 2.3 V to 2.7 V  
-
-
38  
38  
-
-
dB  
dB  
VCC = 3.0 V to 3.6 V  
Xtalk  
crosstalk  
between switches;  
fi = 250 MHz; RL = 50 ; see Figure 16  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
-
-
40  
40  
-
-
dB  
dB  
[1] fi is biased at 350 mV.  
[2] Vi = 632 mV (p-p).  
12.3 Test circuits  
350 mV  
V
CC  
switch  
S
OE  
V
V
IL  
1
2
IL  
R
L
S
1Dn  
2Dn  
1
2
V
IL  
or V  
IH  
V
V
IL  
IH  
Dn  
switch  
OE  
V
IL  
f
dB  
i
GND  
001aao090  
To obtain 0 dBm level at output, adjust fi voltage. Increase fi frequency until dB meter reads 3 dB.  
Fig 14. Test circuit for measuring the frequency response when switch is in ON-state  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
12 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
V
CC  
350 mV  
350 mV  
switch  
S
OE  
V
V
1
2
IH  
IH  
R
R
L
L
V
V
IL  
IH  
S
1Dn  
2Dn  
1
2
V
IL  
or V  
V
IH  
IH  
Dn  
switch  
OE  
f
dB  
i
GND  
001aao091  
To obtain 0 dBm level at input, adjust fi voltage.  
Fig 15. Test circuit for measuring isolation (OFF-state)  
V
CC  
350 mV 350 mV  
R
R
L
L
S
1Dn  
2Dn  
1
V
IL  
or V  
V
IH  
Dn  
2
OE  
IH  
50 Ω  
f
i
dB  
GND  
001aao092  
Fig 16. Test circuit for measuring crosstalk  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
13 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
13. Package outline  
XQFN10: plastic, extremely thin quad flat package; no leads;  
10 terminals; body 1.55 x 2.00 x 0.50 mm  
SOT1049-3  
X
D
B
A
E
terminal 1  
index area  
A
A
1
c
detail X  
C
Æ v  
Æ w  
C
C
A
B
b
5
y
1
y
C
4
1
6
e
1
e
9
b
1
10  
terminal 1  
index area  
L
L
1
0
1
2 mm  
w
scale  
Dimensions  
(1)  
Unit  
A
A
1
b
b
c
D
E
e
e
1
L
L
v
y
y
1
1
1
max 0.5 0.05 0.25 0.33  
1.65 2.1  
0.20 0.28 0.127 1.55 2.0 0.5 1.5 0.43 0.35 0.1 0.05 0.05 0.05  
0.00 0.15 0.23 1.45 1.9 0.38 0.30  
0.48 0.40  
mm nom  
min  
Note  
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.  
sot1049-3_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
- - -  
JEDEC  
MO255  
JEITA  
- - -  
10-12-06  
11-03-30  
SOT1049-3  
Fig 17. Package outline SOT1049-3 (XQFN10)  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
14 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
HVSON10: plastic thermal enhanced very thin small outline package; no leads;  
10 terminals; 3 x 3 x 0.85 mm  
SOT650-2  
X
D
B
A
E
A
A
1
c
detail X  
terminal 1  
index area  
e
1
C
terminal 1  
index area  
v
C A  
B
e
b
y
1
y
w
C
C
1
5
L
K
E
h
10  
6
D
0
1
2 mm  
y
h
scale  
Dimensions  
Unit  
(1)  
(1)  
(1)  
A
A
b
c
D
D
E
E
e
e
K
L
v
w
y
1
1
h
h
1
max 1.00 0.05 0.30  
mm nom 0.85 0.03 0.25 0.2 3.0 2.4 3.0 1.6 0.5  
min 0.80 0.00 0.18 2.9 2.3 2.9 1.5  
3.1 2.5 3.1 1.7  
0.41 0.45  
0.35 0.35 0.1 0.05 0.08 0.1  
0.28 0.30  
2
Note  
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.  
sot650-2_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
- - -  
JEDEC  
JEITA  
- - -  
09-03-16  
09-03-18  
SOT650-2  
MO-229  
Fig 18. Package outline SOT650-2 (HVSON10)  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
15 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
14. Abbreviations  
Table 13. Abbreviations  
Acronym  
CDM  
Description  
Charged Device Model  
Complementary Metal Oxide Semiconductor  
ElectroStatic Discharge  
Human Body Model  
CMOS  
ESD  
HBM  
MM  
Machine Model  
15. Revision history  
Table 14. Revision history  
Document ID  
NX3DV221 v.4  
Modifications:  
Release date  
20130619  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
NX3DV221 v.3  
• Type number NX3DV221TK added.  
• Package outline drawing added (Figure 18).  
NX3DV221 v.3  
NX3DV221 v.2  
NX3DV221 v.1  
20120705  
20111109  
20110421  
Product data sheet  
Product data sheet  
Product data sheet  
-
-
-
NX3DV221 v.2  
NX3DV221 v.1  
-
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
16 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
16. Legal information  
16.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
16.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
16.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
17 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
16.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
17. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
NX3DV221  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 19 June 2013  
18 of 19  
NX3DV221  
NXP Semiconductors  
High-speed USB 2.0 switch with enable  
18. Contents  
1
2
3
4
5
6
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2  
7
7.1  
7.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3  
8
Functional description . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Recommended operating conditions. . . . . . . . 4  
9
10  
11  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4  
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
ON resistance test circuit and waveforms . . . . 6  
11.1  
11.2  
11.3  
12  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7  
Waveforms, test circuit and graphs . . . . . . . . . 8  
Additional dynamic characteristics . . . . . . . . . 12  
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
12.1  
12.2  
12.3  
13  
14  
15  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16  
16  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
16.1  
16.2  
16.3  
16.4  
17  
18  
Contact information. . . . . . . . . . . . . . . . . . . . . 18  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2013.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 19 June 2013  
Document identifier: NX3DV221  

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