935313426147 [NXP]
Wide Band Low Power Amplifier;
| 型号： | 935313426147 |
| 厂家： | 
NXP |
| 描述： | Wide Band Low Power Amplifier 射频 微波 |
| 文件： | 总24页 (文件大小：1108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MBC13720
Rev. 4, 09/2011
Freescale Semiconductor
Data Sheet: Technical Data
MBC13720
Package Information
Plastic Package
Case 419B
MBC13720
SiGe:C Low Noise Amplifier with
Bypass Switch
(SOT-363)
Ordering Information
Device Marking or
Device
Operating
Package
Temperature Range
MBC13720NT11
Refer to Table 1.
20N
SOT-363
1
Contents
1 Introduction
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Ordering Information . . . . . . . . . . . . . . . . . . . 2
3 Electrical Specifications . . . . . . . . . . . . . . . . 3
4 Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 Application Information . . . . . . . . . . . . . . . . . 9
6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7 Product Documentation . . . . . . . . . . . . . . . . 15
The MBC13720 is a high IP3, low noise amplifier
designed for 400 MHz to 2.4 GHz multi-standard
wireless applications. The input and output match is
external to allow maximum design flexibility. The LNA
has two selectable current settings as well as a standby
mode. The LNA operates from a 2.5 to 3.0 V supply. The
MBC13720 is fabricated using an advanced RF
BiCMOS process with the SiGe:C option and is housed
in an ultra small SOT-363 surface mount package.
1.1
Features
•
Selectable current, 5.0 mA or 11 mA
•
•
Standby mode to turn off device completely
High Input IP3:
10 dBm @ 1.9 GHz
13 dBm @ 2.4 GHz
•
Low Noise Figure:
1.38 dB @ 1.9 GHz
1.55 dB @ 2.4 GHz
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
© Freescale Semiconductor, Inc., 2005–2011. All rights reserved.
Ordering Information
•
Gain @ 9.0 mA, 2.75 V:
14.5 dB @ 1.9 GHz
12 dB @ 2.4 GHz
•
•
•
•
•
Suitable for use from 400 MHz to 2.4 GHz
Bias stabilized for device and temperature variations
Ultra small SOT-363 surface mount package
Available only in tape and reel packaging
Available only in a lead free version (device number MBC13720NT1) (Refer to Table 1.)
RF OUT
BIAS
RF IN
4
5
3
2
1
GND
Bias
Control
ENABLE 2
ENABLE 1
6
Figure 1. Pin Connections
2 Ordering Information
Table 1 provides additional details on MBC13720 orderable parts.
Table 1. Orderable Parts Details
Operating Temp
Range (TA.)
RoHS
Compliant
MSL
Level
Solder
Temp
Device
Package
Lead Frame
PB-Free
MBC13720NT1
-40° to 85° C
Tape and Reel
Pb Free
Yes
Yes
1
260° C
MBC13720 Technical Data, Rev. 4
2
Freescale Semiconductor
Electrical Specifications
3 Electrical Specifications
Table 2. Maximum Ratings
Ratings
Symbol
Value
Unit
Supply Voltage
VCC
Tstg
TA
3.3
-65 to 150
-40 to 85
10
V
°C
Storage Temperature Range
Operating Ambient Temperature Range
RF Input Power
°C
Prf
dBm
mW
Power Dissipation
Pdis
100
NOTE
1. Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation should be restricted to the limits in the
Recommended Operating Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model
(HBM) ≤ 550V all pins. Charge Device Model (CDM) ≤ 50V all pins.
Table 3. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
RF Frequency Range
Supply Voltage
fRF
400
2.3
—
2400
3
MHz
V
Vcc
2.7
Logic Voltage
Input High Voltage, Enable 1 and Enable 2
Input Low Voltage, Enable 1 and Enable 2
—
—
1.5
0
—
—
Vcc
V
V
0.95
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(VCC = 2.75, TA = 25° C)
Characteristic
Current Consumption
Symbol
Min
Typ
Max
Unit
Low IP3
High IP3
Bypass
5.0
11
0
mA
mA
μA
ICC
—
—
Input/Output Return Loss
Low IP3
10
10
12
RL
G
—
—
—
—
dB
dB
High IP3
Bypass
RF Gain (900 MHz)
Low IP3
19
20
High IP3
Bypass
-2.9
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
3
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75, TA = 25° C)
Characteristic
RF Gain (1.9 GHz)
Symbol
Min
Typ
Max
Unit
Low IP3
High IP3
Bypass
13
14
-2.5
G
—
—
—
—
—
—
—
—
—
dB
RF Gain (2.4 GHz)
Low IP3
11
12
-2.8
G
—
—
—
—
—
—
—
dB
High IP3
Bypass
Noise Figure
900 MHz
1.9 GHz
1.2
1.38
1.55
NF
dB
2.4 GHz
Input IP3 (900 MHz)
Low IP3
-3
2
27
IIP3
IIP3
IIP3
P1dB
P1dB
P1dB
dBm
dBm
dBm
dBm
dBm
High IP3
Bypass
Input IP3 (1.9 GHz)
Low IP3
4.0
10
29
High IP3
Bypass
Input IP3 (2.4 GHz)
Low IP3
6.0
13
25
High IP3
Bypass
Output 1 dB Compression (900 MHz)
Low IP3
High IP3
Bypass
12
11.5
5.0
Output 1 db Compression (1.9 GHz)
Low IP3
High IP3
Bypass
11
11.5
5.0
Output 1 dB Compression (2.4 GHz)
Low IP3
High IP3
Bypass
14
14
5.0
—
—
—
—
dBm
dB
Reverse Isolation
Low IP3
|S12
|
25
20
High IP3
MBC13720 Technical Data, Rev. 4
4
Freescale Semiconductor
Electrical Specifications
Table 5. Truth Table
EN1
EN2
State
Current Consumption
Low
Low
High
High
Low
High
Low
High
Standby
Bypass
< 20 μA
0 μA
High IP3
Low IP3
11 mA (approx.)
5.0 mA (approx.)
Note: Logic state of “high” equals VCC voltage. Logic state of “low” equals ground potential.
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
5
Parameters
4 Parameters
Table 6. High IP3 Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.615
-85
-49
81
15.495
13.968
12.575
10.962
9.675
8.657
7.819
7.106
6.388
5.961
5.666
5.306
4.962
4.569
4.312
4.092
3.942
3.715
3.513
3.402
3.401
3.256
3.165
3.050
2.909
2.770
2.574
2.451
57
-30
-70
74
0.017
0.022
0.029
0.033
0.039
0.045
0.050
0.055
0.060
0.063
0.071
0.080
0.086
0.093
0.097
0.103
0.110
0.118
0.124
0.130
0.141
0.146
0.159
0.170
0.179
0.183
0.185
0.194
51
63
0.620
0.631
0.649
0.646
0.646
0.644
0.641
0.626
0.628
0.622
0.610
0.591
0.588
0.582
0.583
0.586
0.585
0.580
0.575
0.565
0.559
0.548
0.510
0.499
0.490
0.513
0.517
0.527
-87
-84
67
0.565
0.520
0.498
0.476
0.462
0.447
0.438
0.433
0.419
0.406
0.379
0.373
0.382
0.396
0.399
0.393
0.398
0.405
0.403
0.399
0.363
0.363
0.381
0.393
0.426
0.431
0.462
500
-67
-50
4
600
85
86
700
-85
-78
33
56
-87
-85
-39
84
800
-35
-72
79
56
900
72
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
80
-69
-52
10
85
70
87
-83
-72
64
16
-86
-81
71
-67
-79
78
62
75
82
-71
-48
31
85
-84
-79
-40
75
61
-87
-85
-71
79
-52
-77
82
69
78
84
77
-72
-44
49
86
-83
-76
50
42
-86
-83
4
-70
-81
82
74
80
-79
-72
-37
65
83
-84
-78
15
74
86
-42
-79
-84
82
-84
-73
69
80
78
85
-79
-68
84
-84
66
86
MBC13720 Technical Data, Rev. 4
6
Freescale Semiconductor
Parameters
Table 7. High IP3 Mode 85°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.550
0.516
0.479
0.458
0.438
0.429
0.413
0.402
0.401
0.384
0.366
0.350
0.338
0.340
0.357
0.358
0.356
0.362
0.364
0.349
0.357
0.322
0.300
0.286
0.296
0.348
0.359
0.386
-84
-47
80
16.159
14.168
12.719
11.035
9.665
8.600
7.669
6.984
6.322
5.800
5.467
5.158
4.803
4.418
4.195
3.969
3.768
3.550
3.412
3.256
3.213
3.140
3.018
2.868
2.775
2.669
2.485
2.385
50
-39
-71
73
0.017
0.023
0.029
0.034
0.040
0.044
0.050
0.055
0.063
0.069
0.074
0.081
0.087
0.091
0.096
0.103
0.108
0.113
0.122
0.130
0.134
0.139
0.152
0.160
0.170
0.169
0.178
0.179
53
67
0.595
0.595
0.632
0.622
0.626
0.627
0.623
0.613
0.612
0.606
0.596
0.578
0.572
0.560
0.562
0.562
0.564
0.543
0.551
0.548
0.549
0.535
0.500
0.482
0.488
0.504
0.509
0.501
-87
-83
67
500
-66
-49
4
600
85
86
700
-84
-77
32
52
-87
-85
-31
84
800
-42
-73
78
54
900
71
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
79
-70
-52
18
84
69
87
-82
-70
61
5
-86
-80
72
-69
-80
78
62
75
81
-71
-48
37
85
-83
-78
-41
74
59
-87
-84
-68
80
-56
-78
82
69
78
83
77
-71
-43
50
85
-83
-75
27
37
-86
-82
22
-72
-82
82
73
77
-79
-71
-28
64
83
-83
-76
-29
76
73
86
-47
-80
-84
82
-84
-73
70
77
83
-79
-69
84
-83
67
86
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
7
Parameters
Table 8. High IP3 Mode -40°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.614
0.574
0.534
0.509
0.488
0.480
0.464
0.454
0.452
0.441
0.424
0.409
0.400
0.407
0.428
0.426
0.427
0.430
0.438
0.433
0.429
0.403
0.399
0.409
0.444
0.468
0.466
0.507
-85
-58
81
15.322
13.796
12.602
11.063
9.813
8.774
7.871
7.219
6.568
6.082
5.759
5.454
5.094
4.668
4.457
4.235
4.036
3.808
3.675
3.524
3.483
3.407
3.280
3.147
3.029
2.897
2.647
2.538
55
-30
-70
74
0.017
0.021
0.028
0.031
0.039
0.044
0.048
0.054
0.057
0.064
0.071
0.077
0.081
0.086
0.090
0.096
0.103
0.108
0.117
0.121
0.130
0.137
0.154
0.170
0.176
0.189
0.178
0.181
49
65
0.609
0.611
0.655
0.646
0.649
0.648
0.645
0.628
0.627
0.627
0.623
0.608
0.604
0.598
0.602
0.603
0.607
0.587
0.602
0.594
0.585
0.566
0.541
0.521
0.523
0.526
0.544
0.561
-87
-83
67
500
-65
-47
8
600
85
86
700
-85
-79
24
57
-87
-85
-47
84
800
-32
-71
79
57
900
71
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
80
-69
-50
14
85
71
87
-84
-74
61
20
-86
-81
71
-66
-79
78
62
74
82
-70
-47
31
85
-85
-81
-53
76
62
-87
-85
-73
80
-47
-77
82
68
77
84
77
-72
-46
44
86
-84
-78
37
46
-87
-83
16
-69
-81
82
72
80
79
83
85
74
-73
-36
61
86
-80
-14
81
-36
-78
-84
82
-84
-74
72
78
85
-78
-69
84
-85
67
87
MBC13720 Technical Data, Rev. 4
8
Freescale Semiconductor
Parameters
Table 9. Low IP3 Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.737
0.698
0.655
0.619
0.583
0.550
0.523
0.497
0.479
0.451
0.426
0.404
0.402
0.397
0.400
0.395
0.390
0.389
0.384
0.382
0.374
0.344
0.338
0.362
0.371
0.414
0.410
0.402
-87
-53
85
10.452
9.990
9.594
8.654
7.880
7.200
6.600
6.094
5.622
5.231
4.960
4.757
4.417
4.105
3.925
3.755
3.560
3.350
3.200
3.117
3.036
2.954
2.811
2.743
2.623
2.490
2.265
2.145
66
-5
0.018
0.024
0.031
0.033
0.041
0.045
0.049
0.054
0.059
0.068
0.069
0.075
0.082
0.084
0.089
0.098
0.101
0.108
0.117
0.121
0.133
0.137
0.153
0.164
0.170
0.172
0.169
0.174
54
67
0.669
0.682
0.727
0.714
0.710
0.699
0.683
0.672
0.661
0.648
0.632
0.622
0.615
0.594
0.601
0.592
0.602
0.581
0.577
0.573
0.568
0.547
0.535
0.514
0.499
0.520
0.529
0.540
-87
-85
75
500
-68
78
-66
-42
15
600
87
87
700
-86
-77
69
66
-88
-86
-6
800
-9
58
900
-70
-80
74
72
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
84
-68
-48
24
85
-86
-82
-57
74
87
40
-87
-80
76
-64
-79
80
63
75
83
-70
-44
38
86
-83
-76
27
68
-87
-85
-65
81
-42
-77
-83
79
68
79
77
84
-70
-40
47
86
-82
-69
63
53
-86
-82
33
-69
-81
83
73
81
-79
-72
-30
65
83
-83
-74
54
76
86
-36
-80
-85
83
-84
-73
69
81
77
-85
-81
-78
-67
84
70
87
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
9
Parameters
Table 10. Low IP3 Mode 85°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.722
0.681
0.631
0.601
0.564
0.534
0.512
0.484
0.467
0.440
0.415
0.394
0.391
0.389
0.388
0.381
0.384
0.380
0.377
0.371
0.369
0.343
0.315
0.323
0.340
0.382
0.410
0.402
-87
-45
84
10.245
10.107
9.758
8.730
7.901
7.185
6.564
6.062
5.559
5.165
4.925
4.700
4.348
4.051
3.857
3.689
3.489
3.291
3.139
3.049
2.974
2.941
2.771
2.711
2.636
2.521
2.265
2.145
64
-8
0.016
0.025
0.030
0.036
0.040
0.046
0.051
0.056
0.061
0.066
0.072
0.077
0.084
0.091
0.097
0.100
0.107
0.114
0.122
0.131
0.139
0.143
0.157
0.167
0.174
0.179
0.169
0.174
53
66
0.584
0.650
0.718
0.709
0.708
0.690
0.680
0.670
0.657
0.646
0.628
0.616
0.606
0.586
0.594
0.580
0.589
0.571
0.574
0.567
0.562
0.540
0.525
0.511
0.519
0.533
0.529
0.540
-86
-84
76
500
-69
77
-66
-47
11
600
87
87
700
-85
-76
70
65
-88
-85
1
800
-15
-71
-80
74
60
900
72
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
83
-69
-45
18
85
-86
-82
-57
74
87
36
-86
-80
76
-65
-79
80
62
75
83
-70
-46
37
86
-83
-76
16
67
-87
-84
-62
81
-45
-77
-83
79
69
78
77
84
-71
-46
50
86
-82
-72
50
52
-86
-82
41
-70
-82
83
74
80
-79
-72
-29
63
83
-83
-76
8
76
86
-30
-79
-84
83
-84
-73
72
77
77
-85
-81
-78
-67
84
70
87
MBC13720 Technical Data, Rev. 4
10
Freescale Semiconductor
Parameters
Table 11. Low IP3 Mode -40°C Scattering Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.756
0.727
0.678
0.645
0.607
0.575
0.549
0.525
0.505
0.475
0.451
0.431
0.426
0.422
0.422
0.419
0.417
0.417
0.411
0.406
0.390
0.351
0.339
0.371
0.405
0.439
0.464
0.469
-87
-64
85
9.834
9.449
9.174
8.335
7.647
7.025
6.485
6.047
5.547
5.196
4.976
4.763
4.415
4.138
3.944
3.787
3.597
3.395
3.236
3.141
3.048
2.976
2.836
2.806
2.698
2.556
2.336
2.213
67
5
0.019
0.025
0.031
0.035
0.040
0.046
0.050
0.055
0.056
0.064
0.066
0.071
0.075
0.083
0.085
0.091
0.094
0.100
0.113
0.122
0.132
0.136
0.145
0.155
0.157
0.163
0.167
0.178
57
67
0.676
0.686
0.745
0.736
0.731
0.715
0.703
0.693
0.681
0.672
0.653
0.642
0.640
0.623
0.625
0.610
0.626
0.602
0.605
0.584
0.573
0.557
0.547
0.533
0.539
0.552
0.567
0.568
-88
-85
76
500
-67
78
-66
-46
20
600
87
87
700
-86
-79
70
68
-88
-86
-15
85
800
0
60
900
-69
-79
75
72
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
84
-68
-43
29
-86
-83
-63
75
88
45
-87
-81
77
-62
-78
80
64
75
84
-69
-42
39
86
-84
-77
22
69
-87
-85
-67
82
-36
-76
-83
79
68
79
77
85
-71
-46
46
86
-83
-70
65
56
-87
-82
35
-68
-81
83
73
81
-79
-72
-31
61
83
-83
-76
47
77
86
-23
-79
-84
83
-85
-75
72
81
77
86
-79
-69
85
-83
70
-87
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
11
Parameters
Table 12. Bypass Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = Low, EN2 = High)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.866
0.811
0.753
0.717
0.671
0.629
0.593
0.556
0.527
0.492
0.456
0.435
0.439
0.440
0.428
0.412
0.395
0.396
0.384
0.362
0.346
0.335
0.368
0.398
0.415
0.421
0.415
0.413
-88
79
0.293
0.386
0.468
0.514
0.549
0.575
0.600
0.615
0.624
0.636
0.647
0.655
0.648
0.637
0.631
0.642
0.649
0.636
0.626
0.619
0.622
0.615
0.576
0.546
0.535
0.532
0.533
0.510
76
85
0.295
0.384
0.470
0.506
0.546
0.575
0.604
0.618
0.626
0.632
0.641
0.649
0.652
0.634
0.628
0.626
0.641
0.644
0.633
0.623
0.620
0.610
0.592
0.554
0.530
0.510
0.532
0.523
76
85
0.706
0.702
0.736
0.710
0.687
0.653
0.618
0.585
0.555
0.528
0.493
0.474
0.470
0.456
0.451
0.417
0.397
0.379
0.344
0.322
0.294
0.274
0.271
0.262
0.231
0.199
0.173
0.141
-87
-81
85
500
87
-82
-2
-82
6
600
-88
-85
29
88
700
83
83
-87
-75
82
800
87
87
900
84
-85
-64
83
-85
-64
83
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
87
86
-84
-57
78
-86
-79
63
87
87
-87
-81
76
-87
-81
77
85
83
-83
-70
70
-86
-81
-40
78
86
86
-87
-85
-54
83
-87
-85
-59
84
83
-84
-78
30
84
-82
-68
65
87
87
79
-86
-81
72
-86
-81
72
84
80
-78
-20
78
-81
-69
51
85
85
-87
-84
-66
78
-87
-84
-66
77
84
76
-84
-75
60
-81
-73
20
85
85
MBC13720 Technical Data, Rev. 4
12
Freescale Semiconductor
Parameters
Table 13. Standby Mode 25°C Scattering Parameters
(VCC = 2.7 V, EN1 = Low, EN2 = Low)
S11
S21
S12
S22
f
(MHz)
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
|S11
|
∠ φ
300
400
0.938
0.935
0.927
0.922
0.917
0.918
0.911
0.899
0.891
0.875
0.869
0.852
0.843
0.839
0.830
0.825
0.812
0.803
0.783
0.776
0.759
0.717
0.710
0.719
0.722
0.713
0.707
0.667
-89
-88
88
0.017
0.026
0.035
0.042
0.049
0.054
0.064
0.071
0.075
0.080
0.091
0.099
0.098
0.099
0.106
0.115
0.118
0.116
0.122
0.131
0.134
0.142
0.150
0.165
0.180
0.182
0.175
0.166
50
67
0.020
0.027
0.034
0.042
0.049
0.055
0.063
0.068
0.077
0.081
0.088
0.095
0.102
0.103
0.107
0.114
0.120
0.121
0.125
0.124
0.131
0.140
0.152
0.168
0.174
0.177
0.167
0.171
49
66
0.765
0.795
0.883
0.893
0.909
0.909
0.907
0.894
0.887
0.884
0.869
0.868
0.859
0.836
0.838
0.810
0.819
0.791
0.775
0.769
0.752
0.733
0.710
0.665
0.643
0.607
0.624
0.598
-88
-87
68
500
-68
-53
5
-69
-53
7
600
89
89
700
-89
-89
79
-89
-89
-82
88
800
59
58
900
73
73
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
89
-69
-48
36
-69
-47
35
89
89
-89
-86
87
-89
-87
85
69
67
-77
-68
-27
55
-77
-69
-25
55
89
89
-89
-87
80
-89
-88
-75
87
73
73
88
-77
-67
-20
59
-77
-67
-24
59
-89
-87
-76
86
88
-88
-86
76
76
75
88
-78
-69
-7
-78
-70
-13
70
87
-87
-81
83
-88
-85
-69
81
70
87
79
79
-88
-84
-77
-63
-77
-66
86
-87
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
13
Parameters
Table 14. Low IP3 Noise Parameters
(VCC = 2.7 V, EN1 = High, EN2 = High)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
400
410
420
430
440
450
460
470
480
490
500
550
600
650
700
750
800
850
900
1000
0.57
0.57
0.58
0.58
0.59
0.59
0.59
0.6
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.25
0.25
0.25
0.25
0.24
0.24
0.24
15.5
15.7
16
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
0.19
25.3
24.93
24.8
16.2
16.5
16.7
16.9
17.2
17.4
17.7
17.9
19.1
20.3
21.5
22.7
23.9
25.1
26.4
27.6
30
24.68
24.56
24.44
24.32
24.2
0.6
24.09
23.97
23.85
23.01
22.59
22.16
21.74
21.32
20.89
20.47
20.05
19.2
0.6
0.61
0.63
0.64
0.66
0.67
0.69
0.7
0.72
0.73
0.76
Table 15. High IP3 Noise Parameters
(VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
400
410
420
430
440
450
460
470
0.65
0.65
0.65
0.66
0.66
0.66
0.66
0.66
0.2
0.2
5.5
6.1
6.7
7.3
7.9
8.5
9.1
9.7
0.22
0.22
0.22
0.21
0.21
0.21
0.21
0.21
26.21
26.06
25.91
25.76
25.61
25.46
25.31
25.16
0.2
0.19
0.19
0.19
0.19
0.19
MBC13720 Technical Data, Rev. 4
14
Freescale Semiconductor
Parameters
Table 15. High IP3 Noise Parameters (continued)
(VCC = 2.7 V, EN1 = High, EN2 = Low)
f (MHz)
Fmin (dB)
Mag
Ang
Rn
Ga (dB)
480
490
500
550
600
650
700
750
800
850
900
1000
0.67
0.67
0.67
0.68
0.69
0.7
0.18
0.18
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.1
10.3
10.9
11.5
14.5
17.5
20.5
23.5
26.5
29.4
32.4
35.4
41.4
0.2
0.2
25.01
24.87
24.54
24.06
23.59
23.12
22.65
22.17
21.7
0.2
0.19
0.19
0.18
0.18
0.17
0.17
0.16
0.16
0.15
0.71
0.72
0.73
0.74
0.75
0.77
21.23
20.76
19.81
0.09
Figure 2. Noise Figure vs Temperature (Low IP3 Mode)
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
15
Parameters
Figure 3. Noise Figure vs Temperature (High IP3 Mode)
Figure 4. Icc vs Vcc Over Temperature (Low IP3 Mode)
Figure 5. Icc vs Vcc Over Temperature (High IP3 Mode)
MBC13720 Technical Data, Rev. 4
16
Freescale Semiconductor
Application Information
5 Application Information
The MBC13720 SiGe:C LNA is designed for applications in the 400 MHz to 2.4 GHz range. It has four
different modes: Low IP3, High IP3, Bypass, and Standby. The IC is programmable through the Enable 1
and Enable 2 pins. In Low IP3 mode, current consumption is optimized. Current consumption is higher in
High IP3 mode to boost the intercept point performance. The gain difference between Low IP3 and High
IP3 modes is typically 1.0 dB; and typically the Low IP3 mode has a slightly better noise figure
performance.
The internal bypass switch is designed for broadband applications. One of the advantages of the
MBC13720 is the simplification of the matching network in both bypass and amplifier modes. The bypass
switch is designed so that changes of input and output return losses between bypass mode and amplifier
mode are minimized. As a result, the mismatch at the LNA input and output is minimized and the matching
network design is simplified.
In the design of the external matching network, conjugate matching does not necessarily provide the best
noise figure performance. Balancing between noise figure, gain, and intercept point is the major design
consideration.
Figure 6 shows the typical application circuit at 1.9 and 2.4 GHz. The noise figure, input intercept point,
gain, and return losses are optimized. L1 and C2 act as a low frequency trap to improve the input intercept
point.
In Figure 7, the typical application circuit for 900 MHz is shown. The input low frequency trap again is
used to maximize the input intercept point. It has moderate IP3 performance and high gain. Figure 8 shows
the 900 MHz application circuit with feedback network for higher IP3. Capacitive feedback is used to
increase the third order input intercept point while decreasing gain and provides unconditional stability.
The corresponding PCBs are shown in Figure 9 through Figure 11. Table 16 lists the bill of materials for
the 1900 MHz, 900 MHz, and High IP3 900 MHz application circuits. Typical characteristics of the
application boards are shown in Table 17.
C5
C1
RF
27pf
27 pF
OUT
4
5
6
3
2
1
L1
8.2 nH
RF
IN
L2
2.7 nH
C3
1 pF
C7
33 pF
C2
0.1 uF
R1
330 Ω
C6
C4
33 pF
Logic
Enable2
0.1uF
Enable1
Vcc
Figure 6. Typical 1.9 and 2.4 GHz LNA Application Schematic
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
17
Application Information
L1
2.2 nH
C1
47pF
C3
3 pF
R2
5 Ω
RF
OUT
4
5
6
3
2
1
RF
IN
L2
27 nH
L3
8.2 nH
C2
0.1 uF
R1
330 Ω
C5
C4
47 pF
Logic
Enable2
0.1 uF
Enable1
Vcc
Figure 7. Typical 900 MHz LNA Application Schematic
C6
3.3
pF
C1
150pF
R2
10 Ω
RF
OUT
4
5
6
3
2
1
RF
IN
L1
22 nH
L2
6.8 nH
C2
0.1 uF
R1
330 Ω
C8
C7
0.1 uF
Logic
Enable2
47 pF
Enable1
Vcc
Figure 8. High IP3 900 MHz LNA Application Schematic
1
Table 16. Bill of Materials for the Application Circuits
Component
Value
Case
Manufacturer
Comments
1900 MHz Figure 6 Application Circuit
C1
C2
C3
C4
C5
C6
C7
L1
27 pF
0.1 uF
1.0 pF
33 pF
0402
0603
0402
0402
0402
0603
0402
0402
0402
0402
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Toko
DC Block, Input match
Low freq bypass
Output match
Low freq bypass
DC Block, Output match
Low freq bypass
RF bypass
27 pF
0.1 uF
33 pF
8.2 nH
2.7 nH
330 ohm
Low freq bypass
DC feed, Output match
Bias
L2
Toko
R1
KOA
MBC13720 Technical Data, Rev. 4
18
Freescale Semiconductor
Application Information
1
Table 16. Bill of Materials for the Application Circuits (continued)
Component
Value
Case
Manufacturer
Comments
Q1
MBC13720
SOT363
Freescale
Freescale SiGe LNA
900 MHz Figure 7 Application Circuit
C1
C2
C3
C4
C5
L1
47 pF
0.1 uF
0402
0603
0402
0402
0603
0402
0402
0402
0402
0402
SOT363
Murata
Murata
Murata
Murata
Murata
Toko
DC Block, Input match
Low freq bypass
DC block, Output match
900 MHz short
3.0 pF
47 pF
0.1 uF
Low freq bypass
Input match
2.2 nH
27 nH
L2
Toko
Input match
L3
8.2 nH
330 ohm
5 ohm
Toko
Output match, bias decouple
Bias
R1
R2
Q1
KOA
KOA
Stability
MBC13720
Freescale
Freescale SiGe LNA
High IP3 900 MHz Figure 8 Application Circuit
C1
C2
C3
C4
C5
C6
C7
C8
L1
150 pF
0.1 uF
402
0603
402
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Toko
DC Block, Input match
Low freq bypass
IP3 improvement
IP3 improvement
RF bypass
0.5 pF
0.5 pF
402
1.0 pF
402
3.3 pF
402
Output match
Low freq bypass
RF Bypass
0.1 uF
0603
0402
402
47 pF
22 nH
Input match
L2
6.8 nH
330 ohm
10 ohm
MBC13720
402
Toko
DC feed, output match
Bias
R1
R2
Q1
402
KOA
402
KOA
Stability
SOT363
Freescale
Freescale SiGe LNA
1
All components are RoHS compliant.
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
19
Application Information
MBC13720
C7
RF OUT
RF IN
C2
C1
C5
L1
L2 C3
Q1
R1
C4
C6
Vcc
E1
E2
E2
E1
GND
V8R1
Figure 9. 1.9/2.4 GHz Assembly Diagram
C2
L2
R2 C3
L3
C1
L1
R1
C4
C5
R1
Figure 10. 900 MHz Assembly Diagram
MBC13720 Technical Data, Rev. 4
20
Freescale Semiconductor
Application Information
C2
L1
C3 C4
C5
R2
C1
C6
L2
R1
C7
Figure 11. 900 MHz Capacitive Feedback Assembly Diagram
Table 17. Typical Electrical Characteristics of the Application Circuits
Mode
Symbol
High IP3
Low IP3
Bypass
Standby
Unit
900 MHz TYPICAL (See Figure 7)
Gain
G
20
1.3
2.0
23
19
1.2
-3.0
17
-2.9
2.9
29
-22
—
—
—
—
—
—
22
dB
dB
Noise Figure
NF
Input Intermodulation Intercept Point
Output Intermodulation Intercept Point
Output 1dB Compression Point
Input Return Loss
IIP3
OIP3
dBm
dBm
dBm
dB
26
P1dB
11.5
11
10.5
10
5.0
12
2
|S11
|
2
Output Return Loss
|S22|
|S12
11
10
15
dB
2
Reverse Isolation
|
25
24
2.9
dB
900 MHz HIGH IP3 (See Figure 8)
Gain
G
NF
16
1.4
10
15
1.3
2.0
18.5
12
-4.0
4.0
27
-14.5
—
dB
dB
Noise Figure
Input Intermodulation Intercept Point
Output Intermodulation Intercept Point
Output 1 dB Compression Point
Input Return Loss
IIP3
OIP3
P1dB
—
dBm
dBm
dBm
dB
26
23
—
11.5
12
5.0
8.0
14
—
2
2
2
|S11
|S22
|S12
|
|
|
11
—
Output Return Loss
12
12
—
dB
Reverse Isolation
22
20
4.0
14.5
dB
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
21
Application Information
Table 17. Typical Electrical Characteristics of the Application Circuits (continued)
Mode
Symbol
High IP3
Low IP3
Bypass
Standby
Unit
1.9 GHz (See Figure 6)
Gain
G
14
1.5
10
13
1.4
4.0
17
-2.5
2.5
29
-16
—
—
—
—
—
—
16
dB
dB
Noise Figure
NF
Input Intermodulation Intercept Point
Output Intermodulation Intercept Point
Output 1dB Compression Point
Input Return Loss
IIP3
OIP3
dBm
dBm
dBm
dB
24.4
11.5
10
26.5
5.0
20
P1dB
11
2
|S11
|S22
|S12
|
|
|
8.0
7.0
19
2
2
Output Return Loss
8.0
19
30
dB
Reverse Isolation
2.5
dB
2.4 GHz (See Figure 6)
Gain
G
12
1.7
13
25
14
12
8.0
17
11
1.55
6.0
17.5
14
-2.8
2.8
25
-15
—
—
—
—
—
—
15
dB
dB
Noise Figure
NF
Input Intermodulation Intercept Point
Output Intermodulation Intercept Point
Output 1dB Compression Point
Input Return Loss
IIP3
OIP3
P1dB
dBm
dBm
dBm
dB
22
5.0
12
2
2
2
|S11
|S22
|S12
|
|
|
10
Output Return Loss
7.0
17
14
dB
Reverse Isolation
2.8
dB
MBC13720 Technical Data, Rev. 4
22
Freescale Semiconductor
NOTES
6 Packaging
A
G
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6
1
5
2
4
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
S
-B-
A
B
C
D
G
H
J
K
N
S
V
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
0.65 BSC
---
0.004
---
0.10
0.10
0.10
0.25
0.30
0.004 0.010
0.004 0.012
0.008 REF
M
M
0.2 (0.008)
B
D 6 PL
0.20 REF
0.079 0.087
0.012 0.016
2.00
0.30
2.20
0.40
N
J
C
K
H
Figure 12. Outline Dimensions for SOT-363 (Case Outline 419B-01, Issue G)
7 Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com on the documentation page.
Table 18 summarizes revisions to this document since the previous release (Rev. 3.5).
Table 18. Revision History
Location
Revision
Section 3, “Electrical Specifications
Figure 6 through Figure 8
Added Note about Maximum ratings and ESD specifications.
Updated figure content
MBC13720 Technical Data, Rev. 4
Freescale Semiconductor
23
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Document Number: MBC13720
Rev. 4
09/2011
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