935357815518 [NXP]
Telecom Circuit;
NXP 
OL2385
Industrial RF transceiver
Rev. 1.0 — 15 June 2016
Product data sheet
COMPANY PUBLIC
1. General information
1.1 General description
The device is a fully integrated single-chip transceiver intended for use in an industrial
environment.
The device incorporates several commonly used building blocks including a crystal
stabilized oscillator, a fractional-N based Phase Locked Loop (PLL) for accurate
frequency selection in both TX and RX, Low Noise Amplifier (LNA), attenuator for
Automatic Gain Control (AGC), I/Q down-mixer and two high resolution Analog to Digital
Converters (ADC).The conversion into the digital domain is done in an early phase,
enabling a software defined radio like approach.
By transforming signals in the digital domain in an early phase, one highly configurable
RX channel is available including channel mixer, channel filter, ASK/FSK demodulator,
clock-data recovery, bit processor and a micro-controller memory interface (DMA)
allowing the micro-controller to complete the data handling and handshaking.
The device has an embedded RISC micro-controller optimized for high performance and
low power as well as an EROM for customer applications. The device also includes a
medium power UHF transmit system with a high dynamic range of -35dBm to +14dBm
which makes it ideal for the use in narrow band communication systems. The TX system
allows transmission with data rates up to 400 kbit/s NRZ.
Power ramping and splatter avoidance filters are included to ensure that the transmit
spectrum fulfills all the common standards in Europe, USA and Asia. The phase noise of
the transmitter supports ARIB operation.
The device includes a series of timers to allow for autonomous polling and wake-up
applications. The TX and RX data buffers are located in the RAM with autonomous direct
memory access (DMA), reducing the 'real-time' overhead for the accompanying
micro-controller. The device can be interfaced via SPI, UART or LIN protocol compatible
UART. Simplified programming of the device is facilitated by the HAL (Hardware
Abstraction Layer).
The transceiver is configured to operate with low active and standby power consumption,
ideal for battery powered applications.
OL2385
NXP Semiconductors
Industrial RF transceiver
2. Features and benefits
Single IC for worldwide usage in bands between 160 MHz and 960 MHz
Wide dynamic range with AGC to achieve excellent blocking performance
I/Q down conversion with digital IF processing and automatic gain compensation
Integrated I/Q phase and amplitude mismatch compensation
Receiver path with 2 multiplexed antenna inputs enables different antenna matching
Advanced signal monitoring and data management for fast and reliable signal
detection and processing
High dynamic range RSSI measurement
Programmable PA with digitally controlled power ramping and shaping
Operation up to 400 kbit/s 4FSK for high data rate applications
RX and TX data buffer in RAM with independent DMA channels
Integrated temperature sensor for crystal temperature drift compensation
Support of high accuracy external temperature sensor for ARIB systems
Integrated 16-bit extended micro RISC kernel for system on chip solutions with up to
32kByte EROM
10 independent DMA channels for powerful data transfer and configuration
Integrated copy machine for fast data transfer
Coprocessor for bit manipulation and code redundancy cycle calculation (CRC)
Several timers for firmware development including 3 general purpose timers, 3 RX
channel timers, low power mode polling timer and watch dog timer
Clock driver for micro controller crystal sharing
Controlled via SPI, UART, LIN compatible UART
10 bit ADC sensor interface with up to 100kSps sampling rate
Tool chain (compiler, assembler, linker, debugger) with in circuit debug capability
API available to simplify custom firmware development
IREC evaluation and demonstration kit available for basic RF operation
Remote control protocol (RCP) to operate RF without custom firmware via SPI/UART
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
2 of 85
OL2385
NXP Semiconductors
Industrial RF transceiver
3. Applications
The IC supports the following system applications:
Smart Metering (sub-GHz Zigbee, wireless M-bus)
Home and building security and automation (KNX-RF)
Remote control devices
Wireless medical applications
Wireless sensor network
Industrial monitoring and control
Low Power Wide Area networks (SigFox)
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
3 of 85
OL2385
NXP Semiconductors
Industrial RF transceiver
4. Quick reference data
Table 1.
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
1
General
1.1
1.2
1.3
1.4
2
UHF Carrier Frequency
Power Down Current
Supply Voltage
158
960
MHz
nA
V
700
1.9
-40
5.5
Operating Temperature
Transmitter
+85
°C
2.1
Supply Current
XTAL
0.25
9
mA
Tx @ 0 dBm
Tx @ 14dBm
mA
29
mA
2.2
2.3
Max Output Power
14
dBm
Phase Noise @ 100 kHz Offset
169 MHz band
434 MHz band
868 MHz band
925 MHz band
-120
-117
-109
-108
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
3
Receiver
3.1
Supply Current
@ 45kHz BW
@ 10kHz BW
11
11
mA
mA
kbit/s
dBm
dBm
dBm
dB
3.2
3.3
3.3.1
3.3.2
3.5
3.6
3.7
3.8
3.10
4
Data Rate
Sensitivity
400
ASK/OOK @ 10kHz BW
FSK @ 50 kHz BW
FSK @ 10 kHz BW
868 MHz
-123
-112
-124
>50
60
Adjacent channel rejection
Image channel rejection (calibrated)
Channel Filter Band Width
RSSI
dB
4
Dynamic Range @ 10kHz BW 120
Variation -3
360
3
kHz
dB
dB
Micro-controller
EROM
4.1
4.2
32
7
kByte
kByte
Customer RAM
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
5. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
OL2385AHN/00100[1]
OL2385AHN/001A0[2]
OL2385AHN/001B0[3]
OL2385AHN/001C0[4]
HVQFN48 Plastic thermal enhanced very thin quad flat package; no leads; 48
terminals; body 7 x 7 x 0.85 mm; terminal pitch 0.5 mm; wettable flanks
SOT619-13
SOT619-13
SOT619-13
SOT619-13
HVQFN48 Plastic thermal enhanced very thin quad flat package; no leads; 48
terminals; body 7 x 7 x 0.85 mm; terminal pitch 0.5 mm; wettable flanks
HVQFN48 Plastic thermal enhanced very thin quad flat package; no leads; 48
terminals; body 7 x 7 x 0.85 mm; terminal pitch 0.5 mm; wettable flanks
HVQFN48 Plastic thermal enhanced very thin quad flat package; no leads; 48
terminals; body 7 x 7 x 0.85 mm; terminal pitch 0.5 mm; wettable flanks
[1] Generic version without preflashed software
[2] SigFox software stack preflashed
[3] WMBus 2013 software stack preflashed
[4] sub-GHz ZigBee MAC layer software stack preflashed
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
5 of 85
OL2385
NXP Semiconductors
Industrial RF transceiver
6. Marking
Table 3.
Line
Marking information
Example
Description
A
B
OL2385
*******
2385 = Type number
ID: *****xx (* = Diffusion lot number + x = Assembly ID); In case the number of
digits exceeds 7, ID is truncated by sequentially removing positions from left to
right.
C
ZSDyww*
Z = Manufacturer Code SSMC
S = Assembly Centre Kaohsiung
D = RoHS2006
yww = Date Code (Y = year, W = calendar week)
* = Release Status
X = customer engineering sample (CES)
Y = customer qualification sample (CQS)
_ = released samples (RFS)
2385 = Type number
D
2385ABrrff
A = std version
B = BOM version
rr = Rom Code version
ff = SW version
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
7. Block diagram
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Fig 1. Block diagram
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
7 of 85
OL2385
NXP Semiconductors
Industrial RF transceiver
8. Pinning information
The circuit is packaged in a HVQFN48 with wettable flanks.
8.1 Pinning
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Fig 2. Pinout HVQFN48
8.1.1 Pin 1 keep out area
For the purpose of package orientation, so called "pin 1" identification is included. This
can either be as an additional small pin / pad as shown in design 1 (left) of Figure 3, or a
notch in the die pad as shown in design 2 (right) of Figure 3.
Note that the pin 1 identifier is electrically connected to the ground plate.
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
8 of 85
OL2385
NXP Semiconductors
Industrial RF transceiver
Fig 3. Pin 1 keep out area
8.2 Pin description
Table 4.
Pinning description
Symbol
Pin
1
Description
RF_IN_B
RF receiver input B (internally multiplexed with RF receiver input A)
Ground
GND_RF [6]
TRXSWITCH_RX
GND_RF [6]
TRXSWITCH_ANT
GND_RF [2][6]
TRXSWITCH_TX
GND_PA_RF
TXOUT [7]
GND_PA
2
3
TRX switch (interface to RX part)
Ground
4
5
TRX switch (interface to antenna)
Ground - connected to exposed die pad area
TRX switch (interface to TX part)
Ground
6
7
8
9
Power amplifier output
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Ground
VREGPA
Regulated power amplifier supply, requires external choke to TXOUT
Power supply for PA block in transmit path
Power supply for crystal oscillator
Crystal oscillator input
VDD_PA
VDD_XO
XTAL_N
GND_XO
Ground
XTAL_P
Crystal oscillator output
GND_LO
Ground
VDD_LO
Power supply for local oscillator
Ground
GND_LO
GND_DIG
VDD_3VOUT
VDD_5VIN
VDD_DIG
P16
Ground (digital)
3 V output voltage of the 5 V to 3 V LDO
5 V input voltage of the 5 V to 3 V LDO
Power supply for digital part
GPIO, wake-up, USART0, USART1
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© NXP Semiconductors N.V. 2016. All rights reserved.
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Product data sheet
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Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
Table 4.
Symbol
P15
Pinning description
Pin
25
26
27
28
29
30
31
32
33
34
35
Description
GPIO, timer input, timer output, USART0, USART1
GPIO, timer output, USART0, USART1
GPIO, USART0
P14
P13
P12
GPIO, wake-up, timer input, USART0, USART1
GPIO, fail safe wake-up, timer input, USART0, USART1
P11
P10
GPIO, fail safe wake-up, timer output, RX and TX clock output
Power supply for digital I/Os
VDD_IO
RST_N [8]
MSDA [9]
MSCL [10]
P17
Reset input (active low), internal pull-up resistor
Monitor and debug interface serial data (input/output; internal pull-up in input mode)
Monitor and debug interface serial clock (output)
GPIO, wake-up, timer input, timer output, RX data output, TX data input, USART0,
USART1
P20
36
37
38
39
40
GPIO, wake-up, timer output, USART1
GPIO, GP ADC input NEG
P21
P22
GPIO, wake-up, GP ADC input POS, timer output
GPIO, wake-up, GP ADC reference voltage, USART1
Test pin (must be connected to ground in the application)
LDO output voltage
P23
TEST [1]
VDD_DIGL [3][4][5]
41
42
43
44
45
46
47
48
GND_DIG
Ground (digital)
GND_ADC
IFN_SENSE_IN
IFP_DCBUS
VDD_ADC
Ground
Selectable ADC negative input / pin used for test purposes
Selectable ADC positive input / pin used for test purposes
Power supply for ADC in receiver chain
Power supply for receive path
VDD_RF
RF_IN_A
RF receiver input A (internally multiplexed with RF receiver input B)
[1] Pin TEST must be connected to ground in the application.
[2] The exposed die pad area must be connected to ground.
[3] VDD_DIGL is the internal supply of the digital part and shall only be externally connected to a blocking
capacitor 15 nF (nominal).
[4] VDD_DIGL must neither be pulled to high voltages nor to GND
[5] Do not use VDD_DIGL to supply external devices
[6] All GND_RF are connected internally
[7] TXOUT is not to be supplied externally except for an inductor connected to VREGPA
[8] RST_N shall be connected only with a 4.7 kΩ resistor in series.
[9] MSDA features an on-chip pull-up resistor to VDD_IO and may be left open or terminated to VDD_IO, as
desired.
[10] MSCL is an output and shall be unconnected in the application.
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
9. Design information
9.1 Introduction
The device can be used in many applications where the flexibility of the micro-controller in
combination with the dedicated receive and transmit hardware are exploited. The range of
applications of such a device span from simple transmitter applications triggered by a key
press to complex half duplex RF multi protocol transceivers. In order to describe the
wealth of features and possibilities it is necessary to describe more detailed the key
functional blocks of the device. Functions, such as power management and wake-up
procedures (where the micro-controller is not controlling the process directly), permeate
the complete device and are described in the coming sections. The main functions are the
micro-controller subsystem, including the frequency generation system (the core of all RF
functionality), the transmitter system and the receiver systems.
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Product data sheet
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OL2385
NXP Semiconductors
Industrial RF transceiver
9.2 Power management
9.2.1 Modes of operation
The device supports operation in a 3 V, 5 V or a mixed 3 V and 5 V environment
supporting the following supply use cases:
1. Device and digital interface supplied with regulated 5 V supply
– Digital signaling between all devices in the system is done at 5 V level.
2. Device and digital interface supplied with regulated 3 V (3.3 V) supply
– Digital signaling between all devices in the system is done at 3 V (3.3 V) level.
3. Device supplied with regulated 3 V (3.3 V) supply and digital interface supplied with
regulated 5 V supply
– Digital signaling between all devices in the system is done at 5 V level.
4. Device and digital interface supplied with a single primary lithium battery cell (3.6 V …
1.9 V)
– Digital signaling between all devices in the system is done at the unregulated
battery voltage level.
5. Supply with a single rechargeable battery cell (4.2 V … 3.0 V) and an accompanied
voltage regulator (3.6 V … 2.5 V)
– Device is supplied with the regulated voltage.
– Digital signaling between all devices in the system is done at the unregulated
battery voltage level.
Connection diagrams for these different use cases are depicted in Figure 4.
9.2.2 External power supply domains
Several power supply pins are present to provide the required supply isolation between
various RF, analogue and digital blocks (external power supply domains). The power
supply pins have to be directly connected to a regulator output or a battery. External
supply switches are not required.
Adequate blocking capacitors have to be connected to the external supply pins.
Table 5.
External power supply domains
Power supply pin
Voltage range
Description
VDD_IO, GND_IO
3 V, 5 V
Main power supply domain of the device; supplies the I/O port pins, the
power-on reset circuit and an internal low-power regulator which
supplies the power state logic, the I/O port control latches, the polling
timer and the watchdog.
VDD_LO, GND_LO
VDD_XO, GND_XO
VDD_RF, GND_RF
3 V
3 V
3 V
Power supply for the local oscillator (fractional-N PLL).
Power supply for the crystal oscillator.
Power supply for the radio frontend including the LNA, the input
attenuators and the mixer for receive mode.
VDD_PA, GND_PA
3 V
3 V
Power supply for the power amplifier regulator output and the power
amplifier control for transmit mode.
VDD_ADC, GND_ADC
Power supply for the sigma-delta ADCs in the radio receiver.
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Product data sheet
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Industrial RF transceiver
Table 5.
External power supply domains
Power supply pin
VDD_DIG, GND_DIG
VDD_5VIN
Voltage range
Description
3 V
5 V
Power supply for the digital part.
Supply voltage input for the internal power regulator. This regulator
generates the required supply voltage for the device’s VDD supply pins
in the 3 V domains.
VDD_3VOUT
3 V
Regulated supply voltage output of the internal power regulator.
[1] Voltage ranges are given here only for information purpose. Please refer to the electrical characteristics for
detailed voltage range specification.
The external power supply domains with the associated power supply pins are briefly
described in the Table 5.
The package HVQFN has an exposed die pad at the back which is intended as heat sink
and additional ground connection.
The device includes an internal power regulator which can be used to generate a voltage
less than 3.6 V when such a voltage is not available. This regulator utilizes the two supply
pins VDD_5VIN and VDD_3VOUT. The regulator is only on if the device is in power
supply state ACTIVE. In all other power supply states the regulator is off. VDD_5VIN can
be supplied permanently and the input voltage must be greater than 3.6 V.
The application has to ensure that the current drawn from the internal power regulator
does not exceed the maximum limit given in the section electrical characteristics. If this
limit is exceeded all supply voltage pins in the 3 V domain must be connected to an
external voltage regulator. It is not allowed to supply parts of the device with the internal
and other ones with an external 3 V supply.
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
13 of 85
OL2385
NXP Semiconductors
Industrial RF transceiver
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Fig 4. Connection of external power supply domains for different power supply use cases
9.2.3 Recommended external capacitors in the supply domains
• The device is supplied by an external supply with 3V or 3.3V:
– Pin 21 VDD_3VOUT: open, not connected
– Pin 22 VDD_5VIN: connected to GND
– Pin 31 VDD_IO: 10nF ( 20%) capacitor
– Pin 41 VDD_DIGL: 15nF ( 20%) capacitor (mandatory)
– Pin 47 VDD_RF: 10nF ( 20%) capacitor
– Pin 12 VDD_PA: 10nF ( 20%) capacitor
– Pin 23 VDD_DIG: 10nF ( 20%) capacitor
– Pin 18 VDD_LO: 22nF ( 20%) capacitor
– Pin 13 VDD_XO: 68nF ( 20%) capacitor
– Pin 46 VDD_ADC: 10nF ( 20%) capacitor
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• The device is supplied by an external supply with 5V and the internal 5V to 3V
regulator is used:
– Pin 21 VDD_3VOUT: 10nF capacitor ( 20%)
– Pin 22 VDD_5VIN: connected to external 5 V supply, 100nF ( 20%) capacitor plus
optional 2.2µF capacitor
– Pin 31 VDD_IO: 10nF ( 20%) capacitor
– Pin 41 VDD_DIGL: 15nF ( 20%) capacitor (mandatory)
– Pin 47 VDD_RF: 10nF ( 20%) capacitor
– Pin 12 VDD_PA: 10nF ( 20%) capacitor
– Pin 23 VDD_DIG: 10nF ( 20%) capacitor
– Pin 18 VDD_LO: 22nF ( 20%) capacitor
– Pin 13 VDD_XO: 68nF ( 20%) capacitor
– Pin 46 VDD_ADC: 10nF ( 20%) capacitor
9.2.4 Power supply states
The device supports four different power states:
• RESET state
• POWER-OFF state
• ACTIVE state
• STANDBY state
The state diagram for the functional power supply states is given in Figure 5:
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Fig 5. Power supply state diagram
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9.3 Local oscillator
The radio frequencies needed for reception and transmission are created using a local
oscillator. The signals for the reference namely crystal oscillator, mixer signals and the
mixer phases for both transmission and reception are generated here. The purity, stability
and matching of these signals define the maximum performance that can be achieved by
the RF system; therefore the blocks are optimized for these performance parameters. The
choice of the architecture of the Fractional-N_PLL and that of the voltage controlled
oscillator (VCO) guarantees highest performance and flexibility with the minimum of
current consumption.
The transmission of FSK is achieved by modulation of the PLL and therefore the loop filter
supports a high bandwidth to allow data rates up to 400kbit/s.
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9.4 UHF transmitter subsystem
9.4.1 General description
The UHF transmitter consists of a modulator block for narrow band FSK and ASK, which
controls the PLL to generate the RF signal and two power amplifier blocks. A 12 dBm PA
block, which is able to deliver +14 dBm output power, and a 0 dBm block to save power.
The modulation is digitally controlled, either directly to the power amplifier regulator for
ASK and power ramping, or via the main LO by controlling the fractional divider to
generate FSK modulation in the LO.
• TX Modulator for ASK and FSK
• High current regulator with fast response
• Power amplifier delivering 14dBm max.
• Power amplifier switchable to deliver 0dBm max.
• Power can be regulated in 0.25dB steps
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9.4.2 TRX switch
The TRX switch is a fully featured RF switch used to optimize the component count on the
application boards. Many system require a software controlled RF switch function to
select between antennas and auxiliary inputs. Although the circuit has two dedicated RF
inputs the flexibility in combining the RX and TX paths after the relevant RF matching
adds real benefit for the product.
9.4.2.1 Features
• 50 Ohm low loss paths from TX to Antenna
• 50 Ohm low loss path RX to antenna
• High isolation when switch is open
• Save external components
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Fig 8. Transmit receive switch
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9.5 UHF receiver subsystem
The UHF receiver subsystem consists of a low IF RF down conversion system. With low
gain in the RF and a high resolution ADC used in the baseband to provide the necessary
dynamic range. The system includes a low noise figure and high linearity LNA stage,
supported by passive attenuator blocks controlled by an AGC loop. Down conversion and
high gain baseband amplifiers ensure that the dynamic range of the ADC is exploited fully.
The digital receiver front-end includes the preprocessing and I/Q compensation. The
digital receive chain performs the channel selection, demodulation and framing. The
complete system is shown in Figure 9.
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9.5.1 Features
• RX Antenna switch with 2 inputs
• Wide band receiver for carrier frequencies in the range of 158 to 960MHz
• Low noise figure: 5dB typically @ 434MHz
• Digitally controlled automatic gain control
–
–
18 attenuation steps of 2dB at RF input
15 attenuation steps of 2dB at mixer input
• IQ down conversion - high phase accuracy
• IF bandwidth with +/-400kHz (3dB)
• RF and IF level detectors for AGC loop
• Programmable bias for amplifier stages
• DC offset correction in the baseband
• Digital IF preprocessing
• Narrow band receive chain with DMA
9.5.2 Antenna switch
In order to have the possibility to use the device at more than one frequency band or in an
antenna diversity application, an integrated antenna switch is implemented.
9.5.3 LNA
The LNA is a wide-band inductor-free, highly-linear, low-power and low-noise amplifier.
The LNA uses internal feedback for obtaining its high linearity and a well defined gain as
well as good input matching over temperature and voltage. The LNA has a single-ended
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input with a wide-band input matching optimized for 200Ohms. A current reuse scheme is
employed to maintain maximum performance with minimum current consumption. Power
consumption is controllable depending on the demands of the system. The advanced
feedback structure in combination with the attenuator set-up results in very low LO
radiation.
9.5.4 Attenuators
Passive 2dB step attenuators are positioned in front of the LNA and in front of the mixer in
order to control the gain of the receiver. The RF inputs have integrated ESD protection
and integrated AC coupling for easy application. A matching network can be applied
off-chip for best performance and adaptation to different source impedances.
9.5.5 Mixer
The mixer multiplies the single-ended RF signal with a balanced quadrature (I and Q) LO
signal in order to differentiate between the wanted and image channel. A special algorithm
is used to remove the impact of analog mismatch on the image rejection. This usually
leads to intrusion (leakage) of the image channel into the wanted channel.
9.5.6 Baseband amplifier (TIA) and DC offset compensation
The baseband amplifier stage (TIA - transimpedance amplifier) amplifies the balanced
quadrature (I and Q) mixer output signals to the optimal level for the ADC and performs
the anti-aliasing filtering in front of the sigma-delta ADC. Internal DC offset correction
loops guarantee maximum image suppression and high linearity and dynamic range.
9.5.7 SD ADC
The SD ADC is a 1-bit higher order oversampled sigma-delta ADC with very low current
consumption. The sigma delta switched time core makes use of the most modern
feedback techniques to ensure stability and performance over a wide frequency band,
process and temperature variation. It features fast auto-calibration for optimum
performance. The calibration time is typically below 1 µs. The output is a single bit
data-stream which is further processed by the digital baseband.
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9.5.8 Digital receiver block diagram
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Fig 10. Digital receiver block diagram
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9.5.9 Digital IF preprocessing
9.5.9.1 Features
• Decimation filter
• DC notch filter with optional bypass
• IQ mismatch compensation with optional bypass
The IF prefilter blocks perform sampling rate reduction from the highly oversampled 1-bit
sigma delta bit stream into a Nyquist sampling multi bit signal. Furthermore the decimated
signal is high pass filtered to remove unwanted DC components which could disturb
further processing in the IQ compensation unit. The IQ compensation unit removes the
unwanted image frequency components from the complex low IF signal.
9.5.9.2 Block diagram
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9.5.9.3 Description
The IF prefilter block has a dedicated enable bit field which allows power saving in case
the receiver is not enabled at all.
Due to the tuner design, the resulting spectral view at the intermediate frequency is
inverted (higher frequencies are mapped to lower and vice versa). In order to compensate
that, it is possible to swap the I and Q components. If the IQ swap is enabled, the
frequency order at IF is matching to the RF.
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9.5.10 Automatic gain control
9.5.10.1 Features
• Highly programmable for best flexibility
• 2dB gain steps
• Automatic or manual mode
9.5.10.2 Block diagram
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9.5.10.3 Description
The automatic gain control (AGC) ensures that the analog front-end is protected from high
power signals and therefore ensures high linearity figures throughout the whole dynamic
range of the receiver.
The AGC can work in manual or automatic gain control mode. The manual mode is
intended for debugging system level use cases and for device test.
In automatic mode the AGC measures signal strength, makes a decision to get the best
performance and drives the gain of the analogue front-end.
For measuring signal strength pairs of underload and overload peak detectors are present
at the LNA and at the TIA. The detectors are fast-response voltage comparators checking
if the signal envelope belong to the range specified by the underload and overload
threshold values.
The AGC control strategy has been optimized for providing the best noise figure and
maintaining all linearity requirements. Therefore the first steps of the attenuation are
always done with the baseband (TIA) attenuator. The next steps are done with the
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front-end (LNA) attenuator until it has reached its maximum attenuation. The remaining
attenuation steps are done with the baseband attenuator again. The attenuation level at
which attenuation control is given from the baseband to the front-end attenuator (takeover
threshold) can be modified by software. The control strategy has been presented on the
attenuation distribution figure below. It shows how the attenuation sum AS is distributed
between front-end AFE and baseband ABB attenuations with regards to the requested
attenuation AR.
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Fig 13. Attenuation Distribution
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9.5.11 Narrow band receive chain
9.5.11.1 Features
• Complex IF channel mixer (-400kHz to +400kHz)
• AGC compensation (for RSSI correction)
• Configurable channel filter (4kHz to 360kHz)
• FSK and ASK demodulator with configurable data filter
• RSSI and offset frequency detector/measurement
• Clock and data recovery for ASK and FSK Manchester encoded data (high data rate
offset up to 12%)
• Manchester receiver for ASK and FSK Manchester encoded data (high data rate
offset up to 12%)
• NRZ receiver for NRZ data for 2FSK, 4FSK and 8FSK
• Signal monitors (signal property checks)
• Data processing unit with DMA interface
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Fig 14. RX chain/channel block diagram
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9.5.12 Data processing
The data processing block combines the functions of data recognition and packet building
for valid data sequences and accommodates the transfer to the memory of the device.
There are many functional blocks which work together to carry out this function.
9.5.12.1 Features
• Data processing core
–
–
–
Line decoder
Pattern matching unit
Signal monitors (code properties)
• Data counter
• Timer
• Receive state machine
• Interrupt generation and status flags
• Micro-controller interface with direct memory access (DMA) channel
The data processing sub units are enabled by the main state machine automatically on
demand.
Two different receive algorithms can be selected. The Manchester receiver is optimized
for line coded data (e.g. Manchester, Biphase Mark Code) and supports high data rate
offsets. The NRZ receiver is optimized for NRZ data and supports higher-order modulation
(2FSK, 4FSK, 8FSK). Signal monitors can be used to minimize the likelihood of a false
synchronization in noise (i.e. false alarm rate).
The following signal monitors can be used for the Manchester receiver: modulation
present detector, RSSI measurement, data rate checker, FSK deviation checker, CDR
PLL lock detector, gap detector
The following signal monitors can be used for the NRZ receiver: modulation present
detector, RSSI measurement, FSK deviation checker.
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9.6 Micro-controller subsystem
The digital control of the device is done with a RISC micro controller (uC) designed for low
power and high performance applications. The uC has optimized peripherals to facilitate
quick and efficient control of the radio frequency blocks as well as having multiple
peripherals for interfacing the device to the external application. Timers and mathematical
units are also implemented in hardware to allow the uC to concentrate upon the main
application level challenges. Such activities as data recognition and data movement are
carried out with specific blocks thus increasing the computing power available for the user
application.
The core uC is discussed in detail in a separate document but the interaction as concerns
this specific device and moreover the peripherals are discussed in depth here.
9.6.1 RISC controller
The device is powered by NXP's 3rd generation low power 16-Bit Extended Micro RISC
Kernel (MRK ΙΙΙe), which controls device operation in ACTIVE state.
The MRK ΙΙΙe utilizes a Harvard architecture featuring a 16 bit ALU. The instruction set
supports 8 bit and 16 bit operations and is optimized for C programming. Additionally to all
commands supported by the standard MRK ΙΙΙ, MRK ΙΙΙe supports an extended
instruction set with hardware supported multiplication and division as well as efficient bit
field modification operations. Details about the MRK III controller including full instruction
set description are found in Ref. 1.
Due to the efficient 2-stage pipeline (fetch / execute), most instructions execute in a single
machine cycle (four clock cycles), resulting in ultra low power consumption.
The device provides 64 kByte of linear data address range and 128 kByte linear code
address range, powerful addressing modes and high code density. Besides, the MRK ΙΙΙe
supports a power saving mode and code/data protection mechanisms (privilege modes).
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9.6.2 System clock
9.6.2.1 Clock sources
The following clock sources are available:
• Crystal oscillator clock, XOCLK, 27.6 MHz or 55.2 MHz
– Clock source for system clock, PLL synthesizer, Sigma-Delta ADC
• Main RC oscillator clock, MRCCLK, nominal 25.5 MHz
– Clock source for system clock
• Sampling clock of the Sigma-Delta ADC, FSCLK, 27.6 MHz
– Clock source for system clock, RX subsystem
• Low-power RC oscillator, LPRCCLK, nominal 180 kHz
– Clock source for polling timer and watchdog
• Digitally calibrated divided clock output, PTCLK, nominal 16 kHz
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Fig 15. Clock distribution overview
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9.6.3 Direct Memory Access
The device supports direct memory access channels for different peripherals to unload
the CPU from simple data copying tasks between the peripherals and the data memory.
Besides these DMA channels the device also supports one general purpose DMA channel
for block data transfer between any two data memory ranges.
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9.6.4 Interrupt system
The device contains an interrupt controller featuring 10 hardware interrupt priority levels. If
more than one hardware interrupt request is pending at the same time the source with the
highest request level is selected.
The application can switch dynamically between single or nested interrupt execution and
whether a selected event causes an interrupt or a wake-up event. If an interrupt is
enabled, it causes the RISC controller to perform a CALL operation to the interrupt vector
address, where execution of the Interrupt Service Routine (ISR) starts.
User interrupts are usually disabled during the execution of system code (SYS
instructions). In this case any interrupt request is latched and execution is delayed until
control is returned to the application code. Please note that the system is basically able to
allow user interrupts also during execution of system code. Any system call using this
feature will describe this behavior explicitly.
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9.6.5 I/O ports
The device incorporates two quasi-identical I/O port structures—port 1 and port 2—with in
total 12 independently configurable bidirectional pins. The I/O pins provide alternative port
functions with individual control.
All I/O ports provide wake-up function and all but two have a battery buffered configurable
wake-up edge selection (falling/rising) and wake-up disabling function.
Port 1 consists of 8 I/O pins, that serve the function to control external peripherals and that
are used as button inputs (wake-up). Port 2 comprises 4 I/O pins, providing additional
button inputs as well as various extended functions.
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9.6.6 Timer/Counter 0, 2
Timer/Counter 0 and Timer/Counter 2 are identical. The following description takes
Timer/Counter 0 as reference. All descriptions are also valid for Timer/Counter 2 if T0 is
replaced by T2 in names and figures.
Timer/Counter 0 is a 16 bit timer/counter with 12 bit prescaler and can be operated as
interval and event counter, as digital modulator or as clock divider.
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9.6.7 Timer/Counter 1
Timer 1 is an 8/16 bit timer with 12 bit prescaler and is intended as interval and event
counter for general purpose applications, as demodulator or signal generator and
modulator. Together with Timer 0 it can be used as versatile clock measurement and/or
trimming unit.
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9.6.8 Timer 3 and RX chain timers
Timer 3 is a general purpose timer. The receiver chain has an embedded timer of type
Timer 3 which is called RX chain timer.
The RX chain timer is connected with RX state machine and can generate timeout events.
It can be used for example to detect that a frame has not been received during an
expected time window.
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9.6.9 Polling and wake-up timer
Features:
• Wake-up generation from POWER-OFF or STANDBY state
• Uses crystal calibrated divided low-power RC oscillator as clock source
• Configurable wake-up time generation from 1/16 ms to 65536 ms with 1/16 ms
resolution
• Interrupt generation on wake-up time match
• Update of wake-up time from last device wake-up or from current time
• Polling timer register can be used as timestamp
• Interrupt generation on polling timer register overflow
The polling and wake-up timer can be used to terminate the POWER-OFF or STANDBY
state after a predefined time but it can be also used in ACTIVE state to generate
additional timer intervals.
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9.6.10 Watchdog timer
Features:
• Watchdog timer running in ACTIVE, STANDBY and POWER-OFF state 1
• Generates device reset, if not properly cleared by the application
• Uses crystal calibrated divided low-power RC oscillator as clock source
• Configurable wake-up time generation from 16 to 65536 ms in 13 steps
• Window watchdog operation with 25%, 50%, 75%, 100% clearing window
• Supports watchdog timer reset flag to detect watchdog overflow by the application
• Non-maskable watchdog timer interrupt instead of reset for devices in INIT mode
The device incorporates a watchdog timer to recover the system from application program
deadlocks. The watchdog timer runs continuously in ACTIVE state, STANDBY state and
POWER-OFF state 1 whereas it is off in RESET state and POWER-OFF state 2.
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9.6.11 USART
Industrial RF transceiver
The USART is a universal synchronous and asynchronous receiver and transmitter
featuring SPI, UART and LIN compatible UART operation. The device contains two
identical USARTs denoted as USART0 and USART1. In the register description USART0
or USART1 must be used instead of the prefix USART.
9.6.11.1 Features:
• Integer and fractional baud rate generator
• Large range of selectable baud rates
• Two separate DMA channels for receive and transmit data
SPI
• Synchronous SPI operation
• SPI master and slave mode
• SPI clock polarity and clock phase selection
• SPI full and half duplex operation
• Configurable data length from 1 to 16 bits
• SPI mode fault and slave abort fault detection
• Hardware supported clock absent detection in slave mode to identify stalled SPI slave
operation (4 … 255 bits)
• Full synchronous design, oversampling rate = 6, 8, 10 or 16
• SPI Stop bit to stop an ongoing SPI data transfer
UART
• Asynchronous UART operation
• Configurable parity generation (no, odd, even, sticky 0 or 1) and parity check
• 1 or 2 stop bits
• Configurable data length from 1 to 16 bits
• Full duplex and half duplex UART operation
• Half duplex operation with combined TRXD pin or separate RXD and TXD pin
• Half duplex operation with optional bit collision detection
• Optional selection to abort or continue transmission upon collision detection
• LIN compatible break detection mechanism on RXD line with configurable time-out
window (4 … 255 bits)
• Frame error detection
• ISO7816 compatible operation mode
• Optional inversion of data bit
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9.6.12 Registers for mathematical- logical operations
9.6.12.1 CRC register
Features:
• Configurable CRC polynomial from CRC1 to CRC16
• Configurable CRC start value
• Parallel CRC calculation for 1 to 8 bit input data
• Support for LSBit/MSBit first and right/left aligned input data
The CRC register is intended for CRC generation and CRC checking tasks. It consists of a
16 bit CRC data register CRC_DAT and a configurable CRC polynomial, which can be set
via register CRC_POLY.
9.6.12.2 CRC32 register
Features:
• Configurable CRC polynomial from CRC1 to CRC32
• Configurable CRC start value
• Parallel CRC calculation for 8 bit input data
• Support for LSBit/MSBit first aligned input data
The CRC register is intended for CRC generation and CRC checking tasks. It consists of a
32 bit CRC data register and a configurable CRC polynomial.
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9.6.13 Analog-to-digital converter (ADC)
The ADC is a 10 bit successive approximation analog to digital converter using charge
redistribution techniques to achieve very low power consumption but also a high data
conversion rate.
Features:
• 10 bit A-D conversion
• Selection between four input channels
• Selection between four reference voltages
• Power efficient and area saving switched capacitor charge tank
• Typical A-D conversion time of 37 µs
• Dynamic range up to the maximal supply level VDD_DIG
• Ratiometric measurement possible
• End-of-conversion and Data overflow flagging
• Interrupt generation for End-of-conversion
The ADC is configured and the resulting data can be read out via bit fields. It does not
include multiple data buffering. Thus if previous conversion data was not read when a
subsequent conversion is finished previous data will be overwritten which is flagged with
an overflow flag.
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9.6.14 Temperature measurement
The temperature can be measured in two ways, either with the internal temperature
sensor or using an external temperature sensor, connected to the on-chip 10 bit ADC.
9.6.14.1 External temperature measurement
An external temperature sensor can be used, connected as shown in Figure 16, with
connections made to pins P21, P22 and P23.
The temperature measurement uses the calibration value for R2 stored in the variable
ADC_R2 in EROM (see Section “Trim data”). The resistance value RT of the external
temperature sensor is calculated according to Equation 1. The temperature can then be
derived from the resistance value.
RP + R2
-----------------------------------------------------------
RT =
(1)
512
-------------------------------------------------
– 1
ADCDATA – 511,5
9''B',*
5ꢂ
5ꢄ
3ꢄꢅ
3ꢄꢄ
3ꢄꢂ
53
ࢡ
ꢀ 57
$'&'$7$
$'&
Fig 16. External temperature sensor measurement
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9.7 Device modes
The device features the following Device Modes:
• INIT
• PROTECTED
• TAMPERED
• VIRGIN
The Device Modes affect the overall device behavior, the Monitor and Download Interface
operation and the user ability to access the EROM.
A Device Mode is controlled by a set of configuration bytes, which are located in the
EROM.
The configuration bytes may not be altered by the user directly, instead, the
corresponding Monitor and Download command has to be used.
9.7.1 INIT
When the device is supplied from NXP, it is configured in INIT mode by default.
The INIT mode shall be used during software development only. The Monitor and
Download Interface is fully operational, enabling the customer to initialize the EROM as
desired for the application.
To protect the EROM from readout and to disable the debug features, the device shall be
forced into PROTECTED mode.
Leaving the device in INIT mode may cause the device to execute a software break, in
case a corresponding debug command is received at pin MSDA. This would terminate
execution of the application program and would call the built-in debug program. In this
case, execution of the application program is interrupted until a proper debug command is
issued or a device reset is applied.
9.7.2 PROTECTED
In the moment the device is set into PROTECTED mode, the EROM is protected against
altering and readout via the Monitor and Download Interface, and the debug features are
disabled. The PROTECTED mode has to be used during system testing and in the final
application.
The device may be forced into INIT mode again by issuing a corresponding command via
the Monitor and Download Interface. This command sets the EROM to a predefined state
before the INIT mode is resumed. Hence, the EROM based application program is
discarded. In case this sequence does not complete successfully, the device enters
TAMPERED mode.
9.7.3 TAMPERED
The TAMPERED mode is entered temporarily during the sequence that forces the device
from PROTECTED mode back into INIT mode. If this sequence does not complete
successfully, the TAMPERED mode is entered.
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The device may be forced into INIT mode by again issuing a corresponding command via
the Monitor and Download Interface. This command sets the EROM to a predefined state
first, before the INIT mode is resumed. Hence, the EROM based application program is
discarded. In case this sequence does not complete successfully, the device remains in
TAMPERED mode until a new attempt is made.
9.7.4 VIRGIN
After manufacturing, the device operates in VIRGIN mode, enabling extended device test
and device configuration. Finally, NXP forces the device into INIT mode and the VIRGIN
mode is irreversibly locked in order to ensure it cannot be activated again.
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9.8 System routines
9.8.1 Boot routine
The ROM based boot routine is called immediately after a device reset or a wake-up from
any POWER-OFF state. This event is referred to as cold boot.
The boot routine executes a sequence of instructions to evaluate the device mode and
configures the device, using device protection and configuration flags and passes control
to the application code at the warm boot vector in EROM.
The boot routine does not change the information and the bit fields about the wake-up
events initiated by pressed buttons, polling timer or reset source.
9.8.2 Monitor and download interface
The in-circuit Monitor and Download Interface is intended for non intrusive debug
operation during application program development. The interface allows manipulating the
embedded peripherals and provides means to initialize the EROM. It is implemented as
two-wire serial interface using the dedicated pins MSDA and MSCL. The EROM has a
programming granularity of 64 byte.
The Monitor and Download Interface provides a 16 Bit Real Time Monitor containing
Watches. Besides several HW/SW Break Points and single step operation, the interface
contains an HW accelerator and allows autonomous operation.
The majority of the features provided by the Monitor and Download Interface are available
only, if the device is set into INIT mode, which is the factory default setting. When
performing system tests and field trials, the device shall be set to PROTECTED mode.
Latter one locks the EROM content, protecting it against alteration and read out, as well
as disables the debug features. The device may be forced back into INIT mode by a
dedicated monitor command, which will set the EROM to a predefined state.
A detailed description about the operation and the command set of the Monitor and
Download interface is given in Ref. 3.
9.8.3 Hardware abstraction layer
The device features functions located in ROM which are accessible using system calls.
These are grouped in:
• Retrieving the version number of the device and its related firmware module versions.
• Debug functions which send customer defined data using the MDI interface
• Control of dedicated system debug functionality
• EROM programming function
• Low power functions to enable low power modes
Additionally, an EROM software library is available helping to control all hardware blocks.
This can be seen as guidance and can be fully modified. The detailed information is
available in a separate document.
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10. Characterization information
10.1 Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134)
Parameter
Condition
Min
Typ
Max
150
150
5.5
Unit
°C
°C
V
Storage temperature range
Junction temperature
-55
VDD_5VIN; VDD_IO;
Voltage at any digital I/O pin
-0.3
-0.3
-0.3
Voltage at digital I/O pins
(5.5 V must not be exceeded)
VDD_IO + 0.3
V
V
V
VDD_DIG; VDD_RF; VDD_XO;
VDD_LO; VDD_ADC; VDD_PA
Must not exceed VDD_IO
3.6
0.1
Voltage difference between any of
the following voltages:
VDD_DIG; VDD_RF; VDD_XO;
VDD_LO; VDD_ADC; VDD_PA
VREGPA
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
2.0
V
V
V
V
V
V
TXOUT
3.6
VDD_DIGL
1.95
XTAL_N; XTAL_P
IFN_SENSE_IN; IFP_DCBUS
1.95
VDD_ADC
VDD_RF
RF_IN_A; RF_IN_B; TRXSWITCH_
RX; TRXSWITCH_ANT;
TRXSWITCH_TX
Maximum RX input level without
damage
10
dBm
EROM data retention
AEC-Q100-005 measurement method
with mission profile as follows:
6 % @ -40 °C
15
Years
20 % @ 30 °C
65 % @ 85 °C
5 % @ 100 °C
4 % @ 125 °C
EROM write endurance[1]
Tamb = 25 °C
10k
cycles
[1] The activation energy equals 0.15 eV. According to Arrhennius' Law, the number of useful cycles at 25 °C is
about 2.6 times higher than at 85 °C and about 4.3 times higher than at 125 °C.
10.2 Recommended operating conditions
Table 7.
Recommended operating conditions
Parameter
Condition
Min
Typ
Max
Unit
Parametric ambient temperature
Unless otherwise specified
-40
25
85
°C
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Table 7.
Recommended operating conditions
Parameter
Condition
Min
2.5
1.9
Typ
Max
3.6
Unit
V
Supply voltage range 1A
Supply voltage range 1B
All specification parameters fulfilled
Device fully functional;
3
2.5
V
deviating RX and TX characteristics
Only on VDD_5VIN and VDD_IO.
Supply voltage range 2
4.5
5
5.5
V
Full performance and IO operation on
nominal 5 V supply
10.3 Characteristics
Table 8.
RX Characteristics - General
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz, crystal = 27.6 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
165
310
410
425
Typ
Max
Unit
Note
[1]
Frequency band 169 MHz
Frequency band 315 MHz
Frequency band 410 MHz
172
320
424
450
MHz
MHz
MHz
MHz
2
[1]
3
[1]
4
Frequency band
[1]
426/429/434/447 MHz
5
6
7
8
9
Frequency band 868 MHz
Frequency band 915 MHz
Frequency band 950 MHz
Frequency Step Size
863
902
928
876
928
960
MHz
MHz
MHz
Hz
[1]
[1]
[1]
[4]
[4]
53
Data latency Manchester / NRZ Min. at 2.4 kchip/s and
10 kHz channel filter BW
1.5
6.5
Chip
Max. at 225 kchip/s and
300 kHz channel filter BW
10
11
Sensitivity variation over baud
rate deviation
Baud rate deviation 1 %.
Data rate 50 kbit/s, channel
filter BW = 300 kHz
0.1
1.5
3
3
dB
dB
[4]
[4]
Sensitivity variation over baud
rate deviation
Baud rate deviation 10 %.
Data rate 50 kbit/s, channel
filter BW = 300 kHz
12
13
14
15
16
Maximum input level for
reception
FER 10 %
5
10
130
2
dBm
dB
[4]
[4]
[4]
[4]
[4]
Dynamic range of input
FER 10 %
Channel filter BW = 10 kHz
125
FSK sensitivity variation over
temperature
-40 °C to 85 °C
2.5 V to 3.6 V
1.9 V to 3.6 V
dB
FSK sensitivity variation over
supply voltage
0.3
1
dB
FSK sensitivity variation over
supply voltage
dB
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Table 9.
RX Characteristics - manchester receiver
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
1
FSK sensitivity at input (FER
10 %)
-103
-101
dBm
[5]
Manchester data rate =
50 kbit/s,
deviation = 100 kHz,
channel filter BW = 300 kHz
2
3
4
5
ASK sensitivity at input (FER
10 %)
Manchester data rate =
0.6 kbit/s,
channel filter BW = 10 kHz.
Peak envelope power ASK
-120
-118
-114
-112
-117
-115
-111
-110
dBm
dBm
dBm
dBm
[5]
[5]
[5]
[5]
ASK sensitivity at input (FER
10 %)
Manchester data rate =
1.2 kbit/s,
channel filter BW = 20 kHz.
Peak envelope power ASK
ASK sensitivity at input (FER
10 %)
Manchester data rate =
2.4 kbit/s,
channel filter BW = 50 kHz.
Peak envelope power ASK
ASK sensitivity at input (FER
10 %)
Manchester data rate =
4.8 kbit/s,
channel filter BW = 50 kHz.
Peak envelope power ASK
6
7
Image frequency suppression
without calibration
45
67
dB
dB
[5]
[1]
RSSI at wanted frequency
minus RSSI at image frequency
Image frequency suppression
with calibration (internal tone) at
desired temperature / frequency
46
RSSI at wanted frequency
minus RSSI at image frequency
8
Image frequency suppression
with calibration (external tone)
at desired frequency and 25 °C
72
dB
[5]
RSSI at wanted frequency
minus RSSI at image frequency
9
Spurious emission in RX mode: Conducted measurement at
9 kHz to 1 GHz 50 Ohm reference board
-82
-78
-70
-70
dBm
dBm
[5]
[5]
10
Spurious emission in RX mode: Conducted measurement at
1 GHz to 4 GHz 50 Ohm reference board
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Table 9.
RX Characteristics - manchester receiver
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
11
Spurious emission in RX mode Conducted measurement at
-83
-70
dBm
[1]
within signal band in use
Leakage LO
50 Ohm reference board
Tuned LO frequency.
Conducted 50 Ohm
12
13
14
-83
-70
-78
-63
3
dBm
dBm
dB
[1]
[1]
[5]
Leakage VCO
RSSI tolerance
Tuned to VCO frequency.
Conducted 50 Ohm
One point calibration at
-60 dBm,
-3
-120dBm to 0dBm,
channel filter BW = 10 kHz
15
16
17
RSSI variance over temperature
RSSI variance over voltage
0.3
0.1
3
dB
dB
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
[5]
[5]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[2]
1.9 V to 3.6 V
-40 °C
25 °C
Current consumption in
STANDBY state
20
20
25
1.5
1.5
5
4
85 °C
12
0.6
0.6
2.5
2
18
19
20
Current consumption in
POWER-OFF 2 state (polling
timer and watchdog timer off)
-40 °C
25 °C
85 °C
Current consumption in
POWER-OFF 1 state (polling
timer and watchdog timer on)
-40 °C
25 °C
5
2
5
85 °C
3
6
Current consumption in RESET -40 °C
state
46
52
58
450
60
60
70
600
25 °C
85 °C
21
22
Current consumption XTAL
oscillator
NDK XTAL NX3225SA
Current consumption in ACTIVE XTAL clock; System clock
state
divided by 2 to be used.
EROM execution
-40 °C
25 °C
85 °C
1.9
2.0
2.2
2.2
2.5
2.8
mA
mA
mA
[2]
[2]
[2]
23
Current consumption in ACTIVE RC clock; System clock
state
divided by 2 to be used.
EROM execution
-40 °C
25 °C
85 °C
1.3
1.5
1.7
0.1
1.6
1.8
2
mA
mA
mA
mA
[2]
[2]
[2]
[2]
24
Delta of current consumption in EROM execution
ACTIVE state using system
clock instead of system clock
divided by 2.
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Table 9.
RX Characteristics - manchester receiver
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
25
Delta of current consumption in EROM execution
ACTIVE state using system
-0.1
mA
[2]
clock divided by 4
26
Current Consumption in idle
mode
CPU idle; XTAL clock;
System clock divided by 2 to
be used.
EROM execution
-40 °C
25 °C
85 °C
2
2.2
2.4
2.6
mA
mA
mA
[2]
[2]
[2]
2
2.2
27
Current Consumption in idle
mode
CPU idle; RC clock; System
clock divided by 2 to be
used.
EROM execution
-40 °C
25 °C
85 °C
1.0
1.2
1.4
0.4
1.3
1.5
1.7
mA
mA
mA
mA
[2]
[2]
[2]
[2]
28
29
30
Delta of current consumption in EROM execution
IDLE mode using system clock
instead of the system clock
divided by 2.
Delta of current consumption in EROM execution
IDLE mode using system clock
instead of the system clock
0.2
mA
[2]
divided by 4.
Receiver supply current for
single channel
ACTIVE state;
System clock divided by 2 to
be used.
Channel filter BW = 10 kHz
EROM execution
-40°C
25 °C
85 °C
10
10.5
11.5
12
mA
mA
mA
[2]
[2]
[2]
10.5
11.5
31
Receiver supply current for
single channel
ACTIVE state;
System clock divided by 2 to
be used.
Channel filter BW = 300 kHz
EROM execution
-40°C
25 °C
85 °C
8.9
11.5
11.5
12
mA
mA
mA
µs
[2]
[2]
[2]
[2]
9.5
10.1
270
32
33
Analog start-up time from XTAL From crystal regulator active
450
on to RX ready
to RX ready;
NDK XTAL NX3225SA
XTAL start-up time
From crystal regulator active
to XTAL ready;
150
200
µs
[2]
NDK XTAL NX3225SA
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Table 9.
RX Characteristics - manchester receiver
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
34
Time from power supply
activation to start of EROM
execution
1200
µs
[2]
35
36
37
Time from ACTIVE state to
STANDBY state
System clock to be used.
System clock is used.
23
µs
µs
[2]
[2]
Time from STANDBY state to
ACTIVE state
230
Temperature sensor tolerance
Calibrated at 30 °C.
-40 °C to 85 °C
-4
4
°C
V
[2]
[1]
38
Internal 5 V regulator output
voltage available at VDD_
3VOUT
VDD_5VIN = 5 V,
35 mA load current
2.5
3.1
Table 10. RX Characteristics - Wireless MBUS mode S
Following characteristics are valid for conditions as follows (unless otherwise specified)
2FSK modulation, frequency. deviation= 50kHz, manchester code, datarate = 32.768 kChip/s, Channel filter bandwidth =
360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-108
2
Max
-100
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
FSK jammer - same
[5]
modulation as wanted.
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
[5]
[5]
Adjacent channel rejection
Channel separation =
45
50
50
600 kHz, Channel filter BW
= 360 kHz, jammer same
modulation as wanted
5
Adjacent channel rejection
Channel separation =
600 kHz, Channel filter BW
= 360 kHz, jammer
modulation CW
55
dB
[5]
6
Blocking
2 MHz
55
55
60
65
65
70
60
60
65
70
70
75
12
11
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
13
13
System clock divided by 2 to
be used.
14
Current consumption
System clock divided by 4 to
be used.
11
12
mA
[2]
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OL2385
Product data sheet
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Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
Table 11. RX Characteristics - Wireless MBUS mode T1 (meter to other device)
Following characteristics are valid for conditions as follows (unless otherwise specified)
2FSK modulation, frequency deviation = 50kHz, 3 out of 6 code, data-rate = 100 kChips/s, Channel filter bandwidth = 360kHz,
Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-105
2
Max
-100
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
FSK jammer - same
[5]
modulation as wanted.
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
[5]
[5]
Adjacent channel rejection
Channel separation =
45
50
48
600 kHz, Channel filter BW
= 360 kHz, jammer same
modulation as wanted
5
Adjacent channel rejection
Channel separation =
600 kHz, Channel filter BW
= 360 kHz, jammer
modulation CW
55
dB
[5]
6
Blocking
2 MHz
55
55
60
65
65
70
60
60
65
70
70
75
12.5
12
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
13.5
13
System clock divided by 2 to
be used.
14
Current consumption
System clock divided by 4 to
be used.
11.5
12.5
mA
[2]
Table 12. RX Characteristics - Wireless MBUS mode T2 (meter to other device)
Following characteristics are valid for conditions as follows (unless otherwise specified)
2FSK modulation, frequency deviation = 50kHz, manchester code, datarate = 100 kChips/s, Channel filter bandwidth =
360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-108
2
Max
-105
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
FSK jammer - same
[5]
modulation as wanted.
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
[5]
[5]
Adjacent channel rejection
Channel separation =
50
50
55
600 kHz, Channel filter BW
= 360 kHz, jammer same
modulation as wanted
5
Adjacent channel rejection
Channel separation =
600 kHz, Channel filter BW
= 360 kHz, jammer
modulation CW
55
dB
[5]
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
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Rev. 1.0 — 15 June 2016
51 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 12. RX Characteristics - Wireless MBUS mode T2 (meter to other device)
Following characteristics are valid for conditions as follows (unless otherwise specified)
2FSK modulation, frequency deviation = 50kHz, manchester code, datarate = 100 kChips/s, Channel filter bandwidth =
360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
6
Description
Blocking
Conditions
2 MHz
Min
55
55
60
65
65
70
Typ
60
Max
Unit
dB
Note
[5]
7
Blocking
2 MHz (LBT)
6 MHz
60
dB
[5]
8
Blocking
65
dB
[5]
9
Blocking
10 MHz
70
dB
[5]
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
70
dB
[5]
Blocking
75
dB
[5]
Current consumption
Current consumption
System clock to be used.
12.5
12
13.5
13
mA
mA
[2]
System clock divided by 2 to
be used.
[2]
14
Current consumption
System clock divided by 4 to
be used.
11.5
12.5
mA
[2]
Table 13. RX Characteristics - Wireless MBUS mode R2 channelised system (meter to other device)
Following characteristics are valid for conditions as follows (unless otherwise specified)
2FSK modulation, channel spacing 60kHz, frequency deviation = 6kHz, manchester code, datarate = 4.8 kChips/s, Channel
filter bandwidth = 51kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-117
2
Max
-112
2
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
FSK jammer - same
[5]
modulation as wanted.
3
4
Co-channel rejection
CW jammer
2
2
dB
dB
dB
dB
[5]
[5]
[5]
[5]
Adjacent channel rejection
Channel filter BW = 51 kHz, 48
jammer same modulation as
wanted. Channel separation
= 60kHz, 120kHz, 300 kHz
52
58
62
50
58
5
Adjacent channel rejection
Channel filter BW = 51 kHz, 50
55
58
62
dB
dB
dB
[5]
[5]
[5]
jammer modulation CW.
Channel separation =
50
55
60kHz, 120kHz, 300 kHz
6
Blocking
2 MHz
68
68
75
75
75
75
72
72
80
82
82
84
12
11
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
13
12
System clock divided by 2 to
be used.
14
Current consumption
System clock divided by 4 to
be used.
11
11.5
mA
[2]
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
52 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 14. RX Characteristics - Wireless MBUS mode C1
Following characteristics are valid for conditions as follows (unless otherwise specified)
2FSK modulation, frequency deviation = 45kHz, NRZ, datarate = 100 kChips/s, Channel filter bandwidth = 240kHz, Frame
Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-105
2
Max
-100
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
FSK jammer - same
[5]
modulation as wanted.
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
[5]
[5]
Adjacent channel rejection
Channel filter BW =
240 kHz, jammer same
modulation as wanted.
Channel separation =
575 kHz
45
50
50
5
Adjacent channel rejection
Channel filter BW =
240 kHz, jammer modulation
CW. Channel separation =
575 kHz
55
dB
[5]
6
Blocking
2 MHz
55
55
60
65
65
70
60
60
65
70
70
75
13
12
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
13.5
13
System clock divided by 2 to
be used.
14
Current consumption
System clock divided by 4 to
be used.
12
12.5
mA
[2]
Table 15. RX Characteristics - Wireless MBUS mode C2
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, BT = 0.5, frequency deviation = 25kHz, NRZ, datarate = 50kChips/s, Channel filter bandwidth = 180kHz,
Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-108
2
Max
-103
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
GFSK jammer - same
modulation as wanted.
[5]
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
[5]
[5]
Adjacent channel rejection
Channel filter BW =
180 kHz, jammer same
modulation as wanted.
Channel separation =
575 kHz
50
55
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
53 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 15. RX Characteristics - Wireless MBUS mode C2
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, BT = 0.5, frequency deviation = 25kHz, NRZ, datarate = 50kChips/s, Channel filter bandwidth = 180kHz,
Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
5
Adjacent channel rejection
Channel filter BW =
180 kHz, jammer modulation
CW. Channel separation =
575 kHz
50
55
dB
[5]
6
Blocking
2 MHz
55
55
60
65
65
70
60
60
65
70
70
75
12
11.5
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
13
System clock divided by 2 to
be used.
12.5
14
Current consumption
System clock divided by 4 to
be used.
11
12
mA
[2]
Table 16. RX Characteristics - Wireless MBUS mode N
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, h = 2.0, BT = 0.5, frequency deviation = 2.4 kHz, NRZ, data-rate = 2.4 kChips/s, Channel spacing =
12.5kHz, Channel filter bandwidth = 12kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169.5MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-123
2
Max
-117
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
GFSK jammer - same
modulation as wanted.
[5]
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
dB
dB
[5]
[5]
[5]
[5]
Adjacent channel rejection
Channel filter BW = 12 kHz, 16
jammer same modulation as
wanted. Channel separation:
12.5 kHz, 25 kHz, 62.5 kHz.
18
67
65
60
60
4
Adjacent channel rejection
Channel filter BW = 12 kHz, 45
50
65
65
dB
dB
dB
[5]
[5]
[5]
jammer modulation CW.
Channel separation: 12.5
60
60
kHz, 25 kHz, 62.5 kHz..
6
Blocking
Blocking
Blocking
Blocking
Blocking
Blocking
2 MHz
75
75
80
80
80
80
78
78
85
85
85
85
dB
dB
dB
dB
dB
dB
[5]
[5]
[5]
[5]
[5]
[5]
7
2 MHz (LBT)
6 MHz
8
9
10 MHz
10
11
10 MHz (LBT)
20 MHz
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
54 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 16. RX Characteristics - Wireless MBUS mode N
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, h = 2.0, BT = 0.5, frequency deviation = 2.4 kHz, NRZ, data-rate = 2.4 kChips/s, Channel spacing =
12.5kHz, Channel filter bandwidth = 12kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169.5MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
12
13
Description
Conditions
Min
Typ
11
Max
11.5
11
Unit
mA
mA
Note
[2]
Current consumption
Current consumption
System clock to be used.
System clock divided by 2 to
be used.
10
[2]
14
Current consumption
System clock divided by 4 to
be used.
9.5
10.5
mA
[2]
Table 17. RX Characteristics - Wireless MBUS mode F
Following characteristics are valid for conditions as follows (unless otherwise specified)
2FSK modulation, frequency deviation = 5.5 kHz, NRZ, data-rate = 2.4 kChips/s, Channel spacing = 50kHz, Channel filter
bandwidth = 24 kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-117
2
Max
-114
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
GFSK jammer - same
modulation as wanted.
[5]
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
[5]
[5]
Adjacent channel rejection
Channel filter BW = 24 kHz, 65
jammer same modulation as
wanted. Channel separation:
870 kHz
70
5
Adjacent channel rejection
Channel filter BW = 24 kHz, 65
jammer modulation CW.
Channel separation: 870
kHz
70
dB
[5]
6
Blocking
2 MHz
70
70
75
75
80
80
75
75
80
80
85
85
11
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
12
System clock divided by 2 to
be used.
10.5
11.5
14
Current consumption
System clock divided by 4 to
be used.
10
11
mA
[2]
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
55 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 18. RX Characteristics - Zigbee 868
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, h = 0.7, BT = 0.5, frequency deviation = 35 kHz, NRZ, data-rate = 100 kChips/s, Channel spacing = 200
kHz, Channel filter bandwidth = 200 kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHz,
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-104
8
Max
-100
12
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
2GFSK jammer - same
modulation as wanted.
[5]
3
4
Co-channel rejection
CW jammer
6
10
dB
dB
dB
dB
[5]
[5]
[5]
[5]
Adjacent channel rejection
Channel filter BW =
25
45
50
28
50
55
200 kHz, jammer same
modulation as wanted.
Channel separation: 200
kHz, 400 kHz, 1000 kHz
4
Adjacent channel rejection
Channel filter BW = 200 kHz, 40
45
50
55
dB
dB
dB
[5]
[5]
[5]
jammer modulation CW.
Channel separation: 200
45
50
kHz, 400 kHz, 1000 kHz
6
Blocking
2 MHz
55
55
60
60
65
65
60
60
65
65
70
70
14
13.5
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
15
System clock divided by 2 to
be used.
14.5
14
Current consumption
System clock divided by 4 to
be used.
13
13.5
mA
[2]
Table 19. RX Characteristics - SigFox
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, h = 2.67, BT = 1.0, NRZ, data-rate = 0.6 kChips/s, Channel spacing = 10 kHz, Channel filter bandwidth =
10 kHz, Frame Error Rate (FER) = 20%, payload length = 228 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-124
2
Max
-119
5
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
2GFSK jammer - same
modulation as wanted.
[5)
3
4
Co-channel rejection
CW jammer
2
5
dB
dB
dB
dB
[5]
[5]
[5]
[5]
Adjacent channel rejection
Channel filter BW = 10 kHz, 50
jammer same modulation as
wanted. Channel separation:
10 kHz, 20 kHz, 150 kHz.
55
60
65
55
60
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Product data sheet
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OL2385
NXP Semiconductors
Industrial RF transceiver
Table 19. RX Characteristics - SigFox
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, h = 2.67, BT = 1.0, NRZ, data-rate = 0.6 kChips/s, Channel spacing = 10 kHz, Channel filter bandwidth =
10 kHz, Frame Error Rate (FER) = 20%, payload length = 228 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
55
Max
Unit
dB
Note
[5]
5
Adjacent channel rejection
Channel filter BW = 10 kHz, 50
jammer modulation CW.
Channel separation: 10 kHz,
20 kHz, 150 kHz.
55
60
dB
[5]
60
65
dB
[5]
6
Blocking
2 MHz
70
75
80
85
85
85
75
80
85
90
90
90
13.5
13
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
8
Blocking
9
Blocking
10 MHz
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
Blocking
Current consumption
Current consumption
System clock to be used.
14.5
13.5
System clock divided by 2 to
be used.
14
Current consumption
System clock divided by 4 to
be used.
12.5
13
mA
[2]
Table 20. RX Characteristics - Narrowband 400MHz application
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 5 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth =
25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-116
7
Max
-110
10
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
2GFSK jammer - same
modulation as wanted.
[5]
3
4
Co-channel rejection
CW jammer
2
8
dB
dB
dB
dB
[5]
[5]
[5]
[5]
Adjacent channel rejection
Channel filter BW = 25 kHz, 50
jammer same modulation as
wanted. Channel separation:
25 kHz, 50 kHz, 125 kHz
55
60
65
55
60
5
Adjacent channel rejection
Channel filter BW = 25 kHz, 50
55
60
65
dB
dB
dB
[5]
[5]
[5]
jammer modulation CW.
Channel separation: 25 kHz,
55
60
50 kHz, 125 kHz
6
Blocking
Blocking
Blocking
Blocking
Blocking
2 MHz
70
70
75
80
80
75
75
80
85
85
dB
dB
dB
dB
dB
[5]
[5]
[5]
[5]
[5]
7
2 MHz (LBT)
6 MHz
8
9
10 MHz
10
10 MHz (LBT)
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OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
Table 20. RX Characteristics - Narrowband 400MHz application
Following characteristics are valid for conditions as follows (unless otherwise specified)
2GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 5 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth =
25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
11
Description
Conditions
Min
Typ
85
Max
Unit
dB
Note
[5]
Blocking
20 MHz
80
12
13
Current consumption
Current consumption
System clock to be used.
14.5
13.5
15.5
14.5
mA
mA
[2]
System clock divided by 2 to
be used.
[2]
14
Current consumption
System clock divided by 4 to
be used.
13
14
mA
[2]
Table 21. RX Characteristics - Narrowband 400MHz application
Following characteristics are valid for conditions as follows (unless otherwise specified)
4GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 10 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth =
25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-115
6
Max
-110
10
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
2GFSK jammer - same
modulation as wanted.
[5]
3
4
Co-channel rejection
CW jammer
8
12
dB
dB
dB
dB
[5]
[5]
[5]
[5]
Adjacent channel rejection
Channel filter BW = 25 kHz, 50
jammer same modulation as
wanted. Channel separation:
25 kHz, 50 kHz, 125 kHz
55
60
65
55
60
5
Adjacent channel rejection
Channel filter BW = 25 kHz, 50
55
60
65
dB
dB
dB
[5]
[5]
[5]
jammer modulation CW.
Channel separation: 25 kHz,
55
60
50 kHz, 125 kHz
6
Blocking
2 MHz
70
70
75
80
80
80
75
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
75
8
Blocking
80
9
Blocking
10 MHz
85
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
85
Blocking
85
Current consumption
Current consumption
System clock to be used.
14.5
13.5
15.5
14.5
System clock divided by 2 to
be used.
14
Current consumption
System clock divided by 4 to
be used.
13
14
mA
[2]
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OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
Table 22. RX Characteristics - Narrowband 400MHz application
Following characteristics are valid for conditions as follows (unless otherwise specified)
8GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 15 kChips/s, Channel spacing = 50kHz, Channel filter bandwidth =
50kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz.
Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz
VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA
Nr.
1
Description
Conditions
Min
Typ
-113
6
Max
-108
10
Unit
dBm
dB
Note
[2]
Sensitivity
-40 °C to 85 °C
2
Co-channel rejection
2GFSK jammer - same
modulation as wanted.
[5]
3
4
Co-channel rejection
CW jammer
8
12
dB
dB
dB
dB
[5]
[5]
[5]
[5]
Adjacent channel rejection
Channel filter BW = 50 kHz, 50
jammer same modulation as
wanted. Channel separation:
50 kHz, 100 kHz, 250 kHz
55
60
65
55
60
5
Adjacent channel rejection
Channel filter BW = 50 kHz, 50
55
60
65
dB
dB
dB
[5]
[5]
[5]
jammer modulation CW.
Channel separation: 50 kHz,
55
60
100 kHz, 250 kHz
6
Blocking
2 MHz
65
65
70
75
75
75
70
dB
dB
dB
dB
dB
dB
mA
mA
[5]
[5]
[5]
[5]
[5]
[5]
[2]
[2]
7
Blocking
2 MHz (LBT)
6 MHz
70
8
Blocking
75
9
Blocking
10 MHz
80
10
11
12
13
Blocking
10 MHz (LBT)
20 MHz
80
Blocking
80
Current consumption
Current consumption
System clock to be used.
13.5
13.5
15
System clock divided by 2 to
be used.
14.5
14
Current consumption
System clock divided by 4 to
be used.
13
14
mA
[2]
Table 23. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
1
Analog start-up time from XTAL From crystal LDO regulator
250
us
[2]
on to TX ready
active to TX ready;
NDK XTAL NX3225SA
2
3
4
Maximum output power, CW
mode, L-front matching
13
14.
-28
dBm
dBm
[2]
[2]
Minimum output power, CW
mode, L-front matching
-22
Variation of maximum output
power over temperature, CW
mode, L-front matching
3.0 V
dB
dB
dB
-40 °C to 25 °C
25 °C to 85 °C
0.3
0.3
1.0
1.0
[2]
[2]
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OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
59 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 23. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
0.1
0.8
Max
0.5
Unit
Note
5
Variation of maximum output
power over supply voltage, CW
mode, L-front matching
25 °C 2.5V to 3.6V
25 °C 1.9 V to 3.6 V
3.0
dB
[2]
6
7
PA output power steps,
0.25
-40
0.5
-36
dB
[2]
[2]
2nd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
dBm
8
9
3rd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
-60
-80
-50
-70
dBm
dBm
[2]
[2]
Spurious emission, at maximum Conducted measurement at
output power
50 Ohm reference, 47 MHz
to 230 MHz and 470 MHz to
862 MHz
10
11
Spurious emission, at maximum Conducted measurement at
-73
-73
-65
-53
dBm
dBm
[2]
[2]
output power
50 Ohm
Other frequencies below
1 GHz
Spurious emission, at maximum Conducted measurement at
output power
50 Ohm
1 GHz to 12.5 GHz
868 MHz band
12
13
14
15
16
Out of band TX noise at 12.5
kHz offsets, CW mode
-100
-102
-105
-125
-58
-90
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
Out of band TX noise at 25 kHz 868 MHz band
offsets, CW mode
-95
Out of band TX noise at
100 kHz offset, CW mode
868 MHz band
-100
-120
Out of band TX noise at 1 MHz 868 MHz band
offset, CW mode
Adjacent channel power
Adjacent channel power
Adjacent channel power
Adjacent channel power
GFSK, BT = 0.5, h = 1,
dBc
dBc
dBc
dBc
[2]
[2]
[2]
[2]
channel spacing = 12.5 kHz,
symbol rate = 3 kBaud,
modulation with PN9
sequence
17
18
19
GFSK, BT = 0.5, h = 1,
channel spacing = 25 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
-56
-56
-60
GFSK, BT = 0.5, h = 1,
channel spacing = 50 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
GFSK, BT = 0.5, h = 1,
channel spacing = 300 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
60 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 23. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
20
99.5 % occupied bandwidth
GFSK, BT = 0.5,
5
6
kHz
[2]
Manchester data rate =
1.2 kbit/s, frequency
deviation = ±2.0 kHz
21
22
23
99.5 % occupied bandwidth
99.5 % occupied bandwidth
99.5 % occupied bandwidth
GFSK, BT = 0.5,
8
12
kHz
kHz
kHz
[2]
[2]
[2]
Manchester data rate =
2.4 kbit/s, frequency
deviation = ±2.4 kHz
GFSK, BT = 0.5,
15
155
20
Manchester data rate =
4.8 kbit/s, frequency
deviation = ±4.8 kHz
GFSK, BT = 0.5,
170
33
Manchester data rate =
50 kbit/s, frequency
deviation = ±50 kHz
24
25
TX supply current at maximum System clock divided by 2 to
output power
30
mA
mA
[2]
[2]
be used.
EROM execution
Variation over Temperature of
System clock divided by 2 to
0.5
TX Supply Current at maximum be used.
Output Power 14 dBm
EROM execution;
26
Variation over Voltage of TX
Supply Current at maximum
Output Power 14 dBm (1.9 V -
3.6 V)
System clock divided by 2 to
be used.
EROM execution;
3.0
mA
[2]
27
28
29
30
31
32
Out of band tx noise @ 200kHz Application: zigbee Band:
-112
-118
-127
-138
-104
-115
-108
-113
-125
-135
-99
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
870MHz using channel filter
= 10kHz
Out of band tx noise @ 400kHz Application: zigbee Band:
870MHz using channel filter
= 10kHz
Out of band tx noise @ 100kHz Application: zigbee Band:
870MHz using channel filter
= 10kHz
Out of band tx noise @
10000kHz
Application: zigbee Band:
870MHz using channel filter
= 10kHz
Out of band tx noise @ 60kHz
Application: wmbus Band:
870 using channel filter =
10kHz
Out of band tx noise @ 360kHz Application: wmbus Band:
-112
870 using channel filter =
10kHz
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
61 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 23. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
33
Out of band tx noise @ 6000kHz Application: wmbus Band:
-130
-125
dBc/Hz [2]
870 using channel filter =
10kHz
34
35
36
Out of band tx noise @
10000kHz
Application: wmbus Band:
870 using channel filter =
10kHz
-135
-60
4
-130
dBc/Hz [2]
ADJACENT CHANNEL
POWER, 870 MHz band,
SigFox :
2GFSK, h=2.67, BT=1.0,
Channel spacing 10kHz,
0.6kChip/s
dBc
kHz
[2]
[2]
Occupied bandwidth, 870 MHz 2GFSK, h=2.67, BT=1.0,
5
band, SigFox
Channel spacing 10kHz,
0.6kChip/s
Table 24. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
1
Analog start-up time from XTAL From crystal LDO regulator
250
us
[2]
on to TX ready
active to TX ready;
NDK XTAL NX3225SA
2
3
4
Maximum output power, CW
mode, L-front matching
13
14.
-31
dBm
dBm
[2]
[2]
Minimum output power, CW
mode, L-front matching
-22
Variation of maximum output
power over temperature, CW
mode, L-front matching
3.0 V
dB
dB
dB
-40 °C to 25 °C
25 °C to 85 °C
25 °C 2.5V to 3.6V
25 °C 1.9 V to 3.6 V
0.3
0.3
0.1
0.8
1.0
1.0
0.5
3.0
[2]
[2]
5
Variation of maximum output
power over supply voltage, CW
mode, L-front matching
dB
[2]
6
7
PA output power steps,
0.25
-51
0.5
-36
dB
[2]
[2]
2nd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
dBm
8
9
3rd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
-65
-80
-30
-74
dBm
dBm
[2]
[2]
Spurious emission, at maximum Conducted measurement at
output power
50 Ohm reference, 47 MHz
to 230 MHz and 470 MHz to
862 MHz
10
Spurious emission, at maximum Conducted measurement at
-78
-70
dBm
[2]
output power
50 Ohm
Other frequencies below
1 GHz
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
62 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 24. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
11
Spurious emission, at maximum Conducted measurement at
-78
-70
dBm
[2]
output power
50 Ohm
1 GHz to 12.5 GHz
169 MHz band
12
13
14
15
16
Out of band TX noise at 12.5
kHz offsets, CW mode
-114
-114
-118
-135
-70
-105
-105
-110
-125
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
Out of band TX noise at 25 kHz 169 MHz band
offsets, CW mode
Out of band TX noise at
100 kHz offset, CW mode
169 MHz band
Out of band TX noise at 1 MHz 169 MHz band
offset, CW mode
Adjacent channel power
Adjacent channel power
Adjacent channel power
Adjacent channel power
GFSK, BT = 0.5, h = 1,
dBc
dBc
dBc
dBc
[2]
[2]
[2]
[2]
channel spacing = 12.5 kHz,
symbol rate = 3 kBaud,
modulation with PN9
sequence
17
18
19
GFSK, BT = 0.5, h = 1,
channel spacing = 25 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
-65
-70
-68
GFSK, BT = 0.5, h = 1,
channel spacing = 50 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
GFSK, BT = 0.5, h = 1,
channel spacing = 300 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
20
21
22
23
99.5 % occupied bandwidth
99.5 % occupied bandwidth
99.5 % occupied bandwidth
99.5 % occupied bandwidth
GFSK, BT = 0.5,
3.8
5.3
10
5
kHz
kHz
kHz
kHz
[2]
[2]
[2]
[2]
Manchester data rate =
1.2 kbit/s, frequency
deviation = ±2.0 kHz
GFSK, BT = 0.5,
8
Manchester data rate =
2.4 kbit/s, frequency
deviation = ±2.4 kHz
GFSK, BT = 0.5,
15
120
Manchester data rate =
4.8 kbit/s, frequency
deviation = ±4.8 kHz
GFSK, BT = 0.5,
100
Manchester data rate =
50 kbit/s, frequency
deviation = ±50 kHz
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
63 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 24. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
24
TX supply current at maximum System clock divided by 2 to
32
40
mA
[2]
output power
be used.
EROM execution
25
26
Variation over Temperature of
TX Supply Current at maximum be used.
Output Power 14 dBm
System clock divided by 2 to
0.5
3.0
mA
mA
[2]
[2]
EROM execution;
Variation over Voltage of TX
Supply Current at maximum
Output Power 14 dBm (1.9 V -
3.6 V)
System clock divided by 2 to
be used.
EROM execution;
27
28
29
30
31
Out of band tx noise @ 12.5kHz Application: wmbus Band:
-115
-115
-115
-136
-64
-103
-110
-110
-131
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
170MHz using channel filter
= 10kHz
Out of band tx noise @ 37.5kHz Application: wmbus Band:
170MHz using channel filter
= 10kHz
Out of band tx noise @ 50kHz
Application: wmbus Band:
170MHz using channel filter
= 10kHz
Out of band tx noise @ 4500kHz Application: wmbus Band:
170MHz using channel filter
= 10kHz
ADJACENT CHANNEL
POWER, 169 MHz band,
2GFSK, h=2.0, BT=0.5,
Channel spacing 12.5kHz,
dBc
kHz
[2]
[2]
Wireless MBus - Mode N, 15.4g freq. dev. 2.4kHz, NRZ,
2.4kChip/s
32
Occupied bandwidth, 169 MHz 2GFSK, h=2.0, BT=0.5,
band, Wireless MBus - Mode N, Channel spacing 12.5kHz,
7.7
9
15.4g
freq. dev. 2.4kHz, NRZ,
2.4kChip/s
Table 25. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
1
Analog start-up time from XTAL From crystal LDO regulator
250
us
[2]
on to TX ready
active to TX ready;
NDK XTAL NX3225SA
2
3
Maximum output power, CW
mode, L-front matching
13
14.
-30
dBm
dBm
[2]
[2]
Minimum output power, CW
mode, L-front matching
-22
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Product data sheet
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OL2385
NXP Semiconductors
Industrial RF transceiver
Table 25. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
dB
Note
4
Variation of maximum output
power over temperature, CW
mode, L-front matching
3.0 V
-40 °C to 25 °C
25 °C to 85 °C
25 °C 2.5V to 3.6V
25 °C 1.9 V to 3.6 V
0.3
0.3
0.1
0.8
1.0
1.0
0.5
3.0
dB
[2]
[2]
dB
5
Variation of maximum output
power over supply voltage, CW
mode, L-front matching
dB
[2]
6
7
PA output power steps,
0.25
-55
0.5
-50
dB
[2]
[2]
2nd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
dBm
8
9
3rd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
-45
-80
-40
-70
dBm
dBm
[2]
[2]
Spurious emission, at maximum Conducted measurement at
output power
50 Ohm reference, 47 MHz
to 230 MHz and 470 MHz to
862 MHz
10
11
Spurious emission, at maximum Conducted measurement at
-70
-78
-60
-60
dBm
dBm
[2]
[2]
output power
50 Ohm
Other frequencies below
1 GHz
Spurious emission, at maximum Conducted measurement at
output power
50 Ohm
1 GHz to 12.5 GHz
169 MHz band
12
13
14
15
16
Out of band TX noise at 12.5
kHz offsets, CW mode
-110
-110
-113
-130
-66
-100
-100
-105
-125
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
Out of band TX noise at 25 kHz 169 MHz band
offsets, CW mode
Out of band TX noise at
100 kHz offset, CW mode
169 MHz band
Out of band TX noise at 1 MHz 169 MHz band
offset, CW mode
Adjacent channel power
Adjacent channel power
Adjacent channel power
GFSK, BT = 0.5, h = 1,
dBc
dBc
dBc
[2]
[2]
[2]
channel spacing = 12.5 kHz,
symbol rate = 3 kBaud,
modulation with PN9
sequence
17
18
GFSK, BT = 0.5, h = 1,
channel spacing = 25 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
-65
-63
GFSK, BT = 0.5, h = 1,
channel spacing = 50 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
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65 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 25. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
19
Adjacent channel power
GFSK, BT = 0.5, h = 1,
channel spacing = 300 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
-60
dBc
[2]
20
21
22
23
99.5 % occupied bandwidth
99.5 % occupied bandwidth
99.5 % occupied bandwidth
99.5 % occupied bandwidth
GFSK, BT = 0.5,
5.3
7.8
15
8
kHz
kHz
kHz
kHz
[2]
[2]
[2]
[2]
Manchester data rate =
1.2 kbit/s, frequency
deviation = ±2.0 kHz
GFSK, BT = 0.5,
9
Manchester data rate =
2.4 kbit/s, frequency
deviation = ±2.4 kHz
GFSK, BT = 0.5,
18
180
38
Manchester data rate =
4.8 kbit/s, frequency
deviation = ±4.8 kHz
GFSK, BT = 0.5,
154
Manchester data rate =
50 kbit/s, frequency
deviation = ±50 kHz
24
25
TX supply current at maximum System clock divided by 2 to
output power
33
mA
mA
[2]
[2]
be used.
EROM execution
Variation over Temperature of
System clock divided by 2 to
0.5
TX Supply Current at maximum be used.
Output Power 14 dBm
EROM execution;
26
Variation over Voltage of TX
Supply Current at maximum
Output Power 14 dBm (1.9 V -
3.6 V)
System clock divided by 2 to
be used.
EROM execution;
3.0
mA
[2]
27
28
29
29
Out of band tx noise @ 12.5kHz Application: sensus Band:
-110
-110
-116
-135
-100
-100
-110
-128
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
413MHz using channel filter
= 10kHz
Out of band tx noise @ 25kHz
Application: sensus Band:
413MHz using channel filter
= 10kHz
Out of band tx noise @ 100kHz Application: sensus Band:
413MHz using channel filter
= 10kHz
Out of band tx noise @ 2000kHz Application: sensus Band:
413MHz using channel filter
= 10kHz
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
66 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 25. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
30
Out of band tx noise @
10000kHz
Application: sensus Band:
413MHz using channel filter
= 10kHz
-140
-132
dBc/Hz [2]
31
32
ADJACENT CHANNEL
POWER, 412 MHz band,
Sensus
4GFSK, h=0.5, BT=0.5,
Channel spacing 25kHz,
5kChip/s
-65
dBc
kHz
[2]
[2]
Occupied bandwidth, 412 MHz 4GFSK, h=0.5, BT=0.5,
11.3
13
band, Sensus
Channel spacing 25kHz,
5kChip/s
Table 26. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
1
Analog start-up time from XTAL From crystal LDO regulator
250
us
[2]
on to TX ready
active to TX ready;
NDK XTAL NX3225SA
2
3
4
Maximum output power, CW
mode, L-front matching
12.5
14
dBm
dBm
[2]
[2]
Minimum output power, CW
mode, L-front matching
-31
-25
Variation of maximum output
power over temperature, CW
mode, L-front matching
3.0 V
dB
dB
dB
-40 °C to 25 °C
25 °C to 85 °C
25 °C 2.5V to 3.6V
25 °C 1.9 V to 3.6 V
0.3
0.3
0.1
0.8
1.5
1.2
0.5
3.0
[2]
[2]
5
Variation of maximum output
power over supply voltage, CW
mode, L-front matching
dB
[2]
6
7
PA output power steps,
0.25
-51
0.5
-36
dB
[2]
[2]
2nd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
dBm
8
9
3rd harmonic, at maximum
output power
Conducted measurement at
50 Ohm
-47
-75
-30
-65
dBm
dBm
[2]
[2]
Spurious emission, at maximum Conducted measurement at
output power
50 Ohm reference, 47 MHz
to 230 MHz and 470 MHz to
862 MHz
10
11
Spurious emission, at maximum Conducted measurement at
-75
-75
-55
-53
dBm
dBm
[2]
[2]
output power
50 Ohm
Other frequencies below
1 GHz
Spurious emission, at maximum Conducted measurement at
output power
50 Ohm
1 GHz to 12.5 GHz
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
67 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 26. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
12
Out of band TX noise at 12.5
kHz offsets, CW mode
434 MHz band
-110
-98
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
13
14
15
16
Out of band TX noise at 25 kHz 434 MHz band
offsets, CW mode
-110
-114
-130
-66
-98
Out of band TX noise at
100 kHz offset, CW mode
434 MHz band
-100
-125
Out of band TX noise at 1 MHz 434 MHz band
offset, CW mode
Adjacent channel power
Adjacent channel power
Adjacent channel power
Adjacent channel power
GFSK, BT = 0.5, h = 1,
dBc
dBc
dBc
dBc
[2]
[2]
[2]
[2]
channel spacing = 12.5 kHz,
symbol rate = 3 kBaud,
modulation with PN9
sequence
17
18
19
GFSK, BT = 0.5, h = 1,
channel spacing = 25 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
-54
-64
-60
GFSK, BT = 0.5, h = 1,
channel spacing = 50 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
GFSK, BT = 0.5, h = 1,
channel spacing = 300 kHz,
symbol rate = 6 kBaud,
modulation with PN9
sequence
20
21
22
23
24
99.5 % occupied bandwidth
99.5 % occupied bandwidth
99.5 % occupied bandwidth
99.5 % occupied bandwidth
GFSK, BT = 0.5,
5.3
7.8
12.5
154
30
7
kHz
kHz
kHz
kHz
mA
[2]
[2]
[2]
[2]
[2]
Manchester data rate =
1.2 kbit/s, frequency
deviation = ±2.0 kHz
GFSK, BT = 0.5,
9
Manchester data rate =
2.4 kbit/s, frequency
deviation = ±2.4 kHz
GFSK, BT = 0.5,
18
180
36
Manchester data rate =
4.8 kbit/s, frequency
deviation = ±4.8 kHz
GFSK, BT = 0.5,
Manchester data rate =
50 kbit/s, frequency
deviation = ±50 kHz
TX supply current at maximum System clock divided by 2 to
output power
be used.
EROM execution
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
68 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 26. TX Characteristics
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434MHz, crystal = 55.2 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
25
Variation over Temperature of
System clock divided by 2 to
0.5
mA
[2]
TX Supply Current at maximum be used.
Output Power 14 dBm
EROM execution;
26
Variation over Voltage of TX
Supply Current at maximum
Output Power 14 dBm (1.9 V -
3.6 V)
System clock divided by 2 to
be used.
EROM execution;
3.0
mA
[2]
27
28
29
29
31
32
Out of band tx noise @ 12.5kHz Application: wmbus Band:
-110
-112
-112
-135
-50
-100
-102
-102
-130
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
dBc/Hz [2]
434MHz using channel filter
= 10kHz
Out of band tx noise @ 37.5kHz Application: wmbus Band:
434MHz using channel filter
= 10kHz
Out of band tx noise @ 50kHz
Application: wmbus Band:
434MHz using channel filter
= 10kHz
Out of band tx noise @ 4500kHz Application: wmbus Band:
434MHz using channel filter
= 10kHz
ADJACENT CHANNEL
POWER, 434 MHz band,
Wireless MBus - Mode F
4GFSK, h=0.5, BT=0.5,
Channel spacing 25kHz,
5kChip/s
dBc
kHz
[2]
[2]
Occupied bandwidth, 434 MHz 4GFSK, h=0.5, BT=0.5,
band, Wireless MBus - Mode F Channel spacing 25kHz,
5kChip/s
20
22
Table 27. Characteristics for TRX switch
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
27
Max
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Note
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
1
TRX switch isolation from
TRXSWITCH_TX to
TRXSWITCH_ANT
169 MHz band
315 MHz band
434 MHz band
868 MHz band
925 MHz band
169 MHz band
315 MHz band
434 MHz band
868 MHz band
925 MHz band
23
20
16
16
2
TRX switch loss from
TRXSWITCH_TX to
TRXSWITCH_ANT
0.3
0.3
0.3
0.5
0.5
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OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
69 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 27. Characteristics for TRX switch
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHz
VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA
Nr.
Description
Conditions
Min
Typ
27
Max
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Note
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
[5]
3
TRX switch isolation from
TRXSWITCH_RX to
TRXSWITCH_ANT
169 MHz band
315 MHz band
434 MHz band
868 MHz band
925 MHz band
169 MHz band
315 MHz band
434 MHz band
868 MHz band
925 MHz band
24
22
18
18
4
TRX switch loss from
TRXSWITCH_RX to
TRXSWITCH_ANT
0.4
0.4
0.4
0.6
0.6
Table 28. Characteristics for ESD
Nr.
Description
Conditions
Min
Typ
Max
Unit
1
ESD HBM - RF pins[1]
Electrostatic Discharge
(Human Body Model)
1500 Ω, 100 pF
2
kV
2
3
ESD HBM - non RF pins[1]
Electrostatic Discharge
(Human Body Model)
1500 Ω, 100 pF
2
kV
V
ESD CDM[2]
All pins
500
Electrostatic Discharge
(Charged Device Model)
[1] JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control
process.
[2] JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control
process.
Table 29. Static Characteristics I/O Ports
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD_IO = 1.9 V to 3.6 V and 4.5 V to 5.5 V
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
1
High level input voltage
0.7 ×
VDD_IO
VDD_IO +
0.3
V
[1]
2
3
Low Level input voltage
Input hysteresis voltage
–0.3
0.3 ×
VDD_IO
V
V
[1]
[4]
0.1 ×
VDD_IO
4
5
6
Output high current
Output low current
Output high current
At VOH = VDD_IO - 0.4 V
At VOL = 0.4 V
1
1
2
mA
mA
mA
[1]
[1]
[2]
VDD_IO > 2.7 V;
At VOH = 0.8 × VDD_IO
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© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
70 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 29. Static Characteristics I/O Ports
Following characteristics are valid for conditions as follows (unless otherwise specified)
Tamb = -40 °C to 85 °C, VSS = 0 V, VDD_IO = 1.9 V to 3.6 V and 4.5 V to 5.5 V
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
7
Output low current
VDD_IO > 2.7 V;
2
mA
[2]
At VOL = 0.2 × VDD_IO
Voltage at port pin = 0 V
8
9
Pull-up resistor
50
50
70
70
110
110
kOhm [1]
kOhm [1]
Pull-down resistor
Voltage at port pin = VDD_
IO
Table 30. Dynamic Characteristics I/O Ports
Following characteristics are valid for conditions as follows (unless otherwise specified)
amb = -40 °C to 85 °C, VSS = 0 V, VDD_IO = VDD_IO = 2.5 V to 3.6 V and 4.5 V to 5.5 V
T
Nr.
Description
Conditions
50 pF load
50 pF load
50 pF load
20 pF load
Min
6
Typ
Max
35
35
5
Unit
ns
Note
1
2
3
4
5
Output rise time
Output fall time
Bandwidth 50
Bandwidth 20
Bandwidth 20
[4]
[4]
[4]
[4]
[4]
6
ns
MHz
MHz
MHz
10
5
20 pF load,
VDD_IO = 1.9 V to 2.5 V
Table 31. SPI / UART
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
1
SPI operation speed
Master Mode
CPU_CLK_SEL = 1 or 2;
System clock to be used.
50
1.0M
baud
[4]
2
3
SPI operation speed
Slave Mode
CPU_CLK_SEL = 1 or 2;
System clock to be used.
50
50
1.0M
1.7M
baud
baud
[4]
[4]
UART operation speed
CPU_CLK_SEL = 1 or 2;
System clock to be used.
Table 32. Application relevant limits
Nr.
1
Description
Conditions
Min
Typ
Max
Unit
V
Note
[1]
Power-on reset level
1.5
2
Maximum current in pin TXOUT Maximum 10 % PA
using 12 dBm PA activation over 10 years
40
3.5
50
mA
[4]
3
4
Maximum current in pin TXOUT Maximum 10 % PA
mA
mA
[4]
[1]
using 0 dBm PA
activation over 10 years
Maximum current that can be
provided by the internal 5 V
regulator; available at VDD_
3VOUT
5
6
Maximum external load
capacitance[1] connected at
VDD_3VOUT
168
nF
[4]
[4]
Frequency of external reference
crystal connected to XTAL_N
and XTAL_P
27.6
MHz
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
71 of 428
OL2385
NXP Semiconductors
Industrial RF transceiver
Table 32. Application relevant limits
Nr.
Description
Conditions
Min
Typ
Max
Unit
Note
7
Frequency of external reference
clock connected to XTAL_N
27.6
MHz
[4]
8
Frequency of external reference Second Crystal frequency
55.2
55.2
MHz
[4]
crystal connected to XTAL_N
and XTAL_P
selected.
9
Frequency of external reference Second Crystal frequency
MHz
V
[4]
[4]
[4]
[4]
clock connected to XTAL_N
selected.
10
11
12
External clock input voltage
level at XTAL_N
LDO_XO_OK = 1
0
1.5
External clock input signal
amplitude at XTAL_N
LDO_XO_OK = 1
LDO_XO_OK = 0
0.6
-0.1
Vpp
V
Input voltage level at XTAL_N
when XO LDO is disabled or not
ready
0.1
55
13
Duty cycle of external clock
input signal XTAL_N[2]
45
%
[4]
[1] All tolerances of the external capacitors must be taken into account when calculating the maximum allowed
external load capacitance.
[2] As the external clock input signal requires a DC offset the average value of the external clock signal shall
be used as reference level to determine the duty cycle.
Notes:
[1] Tested in production test
[2] Characterized at 1.9V, 2.5 V, 3 V, 3.6 V; -40 °C, 25 °C, 85 °C
[3] Characterized at 3 V; -40 °C, 25 °C, 85 °C
[4] Guaranteed by design
[5] Characterized at 3 V; -40 °C, 25 °C, 85 °C, limited sample size
All information provided in this document is subject to legal disclaimers.
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11. Mechanical information
11.1 Package outline
HVQFN48: plastic thermal enhanced very thin quad flat package; no leads;
48 terminals; body 7 x 7 x 0.85 mm
SOT619-13
D
B
A
terminal 1
index area
A
A
1
C
E
detail X
e
1
C
e
v
w
C
C
A
B
b
y
y
1/2 e
C
1
13
24
L
25
12
e
e
E
h
2
1/2 e
1
36
terminal 1
index area
48
37
X
D
h
0
2.5
5 mm
scale
Dimensions (mm are the original dimensions)
(1) (1)
Unit
A
A
b
C
D
D
h
E
E
h
e
e
1
e
L
v
w
y
y
1
1
2
max 1.00 0.05 0.30
7.1 5.65 7.1 5.65
0.5
mm nom 0.85 0.02 0.21 0.2 7.0 5.50 7.0 5.50 0.5 5.5 5.5 0.4 0.1 0.05 0.05 0.1
0.80 0.00 0.18 6.9 5.35 6.9 5.35 0.3
min
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included
sot619-13_po
Issue date
References
Outline
version
European
projection
IEC
- - -
JEDEC
JEITA
- - -
09-08-24
13-03-27
SOT619-13
MO-220
Fig 17. Package outline HVQFN48
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Industrial RF transceiver
Fig 18. Package detail wettable flanks
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Industrial RF transceiver
12. Glossary
AAC — Automatic Amplitude Calibration
AAFC — Automatic Amplitude and Frequency Calibration
AC — Alternating Current
ADC — Analogue to Digital Converter
AFC — Automatic Frequency Calibration
AGC — Automatic Gain Control
API — Application Programming Interface
ASK — Amplitude Shift Keying
BF — Bit Field
BW — BandWidth
BWC — BandWidth Control
CDR — Clock and Data Recovery
CP — Charge Pump
CW — Continuous Wave
DAC — Digital to Analogue Converter
DC — Direct Current
DMA — Direct Memory Access
ESD — ElectroStatic Discharge
FER — Frame Error Rate
FSK — Frequency Shift Keying
FSM — Finite State Machine
FSYNC — Frame SYNChronisation
HAL — Hardware Abstraction Layer
HBM — Human Body Model
IF — Intermediate Frequency
IREC — Intelligent Radio Evaluation and Configuration
ISM — Industrial, Scientific and Medical
ISR — Interrupt Service Routine
LDO — Low Drop-Out regulator
LIN — Local Interconnect Network
LNA — Low Noise Amplifier
LO — Local Oscillator
LPF — Low-Pass Filter
MMR — Missed Message Rate
MMU — Memory Management Unit
NC — Not Connected
NRZ — Non Return to Zero
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Industrial RF transceiver
OFMU — Offset Frequency Measurement Unit
OOK — On-Off Keying
PA — Power Amplifier
PFD — Phase-Frequency Detector
PLL — Phase Locked Loop
POR — Power-On-Reset
POK — Power OK
PRN — Pseudo-Random Number
PRNG — Pseudo-Random Number Generator
RF — Radio Frequency
RFU — Reserved for Future Use
RSSI — Received Signal Strength Indicator
RX — Receiver
SD — Sigma-Delta
SFR — Special Function Register
SPI — Serial Peripheral Interface
TIA — Trans-Impedance Amplifier
TX — Transmitter
UART — Universal Asynchronous Receiver and Transmitter
UHF — Ultra High Frequency
PLL — Phase Locked Loop
VCO — Voltage Controlled Oscillator
WUP — Wake-UP
ZIF — Zero Intermediate Frequency
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13. References
[1] MRK III Programmers Reference — MRK III and MRK IIIe instruction set,
Rev. 04 — 04 Jul 2012
[2] Application note AN10365 — Surface mount reflow soldering,
Rev. 7 — 18 April 2013
[3] MRK III MDI — Monitor and Download Interface,
Rev. 09 — 23 June 2014
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Industrial RF transceiver
14. Revision history
Table 33. Revision history
Document ID
OL2385_1.0
Modifications:
Release date
Data sheet status
Change notice
Supersedes
15 June 2016
Product data sheet
—
—
• Initial product data sheet - COMPANY PUBLIC
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Industrial RF transceiver
15. Legal information
15. Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use
15.1 Definitions
NXP Semiconductors products are not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an NXP
Semiconductors product can reasonably be expected to result in personal
injury, death or severe property or environmental damage. NXP
Semiconductors and its suppliers accept no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications
Applications that are described herein for any of these products are for
illustrative purposes only. NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
15.2 Disclaimers
Limited warranty and liability
Information in this document is believed to be accurate and reliable. However,
NXP Semiconductors does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness of such information
and shall have no liability for the consequences of use of such information.
NXP Semiconductors takes no responsibility for the content in this document
if provided by an information source outside of NXP Semiconductors.
Limiting values
Stress above one or more limiting values (as defined in the Absolute
Maximum Ratings System of IEC 60134) will cause permanent damage to the
device. Limiting values are stress ratings only and (proper) operation of the
device at these or any other conditions above those given in the
Recommended operating conditions section (if present) or the Characteristics
sections of this document is not warranted. Constant or repeated exposure to
limiting values will permanently and irreversibly affect the quality and
reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale
NXP Semiconductors products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of NXP Semiconductors
products by customer.
Right to make changes
NXP Semiconductors reserves the right to make changes to information
published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document
supersedes and replaces all information supplied prior to the publication
hereof.
All information provided in this document is subject to legal disclaimers.
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OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
No offer to sell or license
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Nothing in this document may be interpreted or construed as an offer to sell
products that is open for acceptance or the grant, conveyance or implication
of any license under any copyrights, patents or other industrial or intellectual
property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products
Unless this data sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the product is not suitable for
automotive use. It is neither qualified nor tested in accordance with
automotive testing or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive qualified products in
automotive equipment or applications.
Translations
A non-English (translated) version of a document is for reference only. The
English version shall prevail in case of any discrepancy between the
translated and English versions.
15.3 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
All information provided in this document is subject to legal disclaimers.
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Industrial RF transceiver
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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Industrial RF transceiver
17. Figures
Fig 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Fig 2. Pinout HVQFN48. . . . . . . . . . . . . . . . . . . . . . . . . .8
Fig 3. Pin 1 keep out area . . . . . . . . . . . . . . . . . . . . . . . .9
Fig 4. Connection of external power supply domains for
different power supply use cases. . . . . . . . . . . . .14
Fig 5. Power supply state diagram. . . . . . . . . . . . . . . . .16
Fig 6. Local Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . .17
Fig 7. Radio transmitter system. . . . . . . . . . . . . . . . . . .18
Fig 8. Transmit receive switch . . . . . . . . . . . . . . . . . . . .19
Fig 9. UHF receiver subsystem . . . . . . . . . . . . . . . . . . .20
Fig 10. Digital receiver block diagram . . . . . . . . . . . . . . .22
Fig 11. Digital receiver front-end . . . . . . . . . . . . . . . . . . .23
Fig 12. AGC block diagram . . . . . . . . . . . . . . . . . . . . . . .24
Fig 13. Attenuation Distribution . . . . . . . . . . . . . . . . . . . .25
Fig 14. RX chain/channel block diagram . . . . . . . . . . . . .26
Fig 15. Clock distribution overview . . . . . . . . . . . . . . . . .29
Fig 16. External temperature sensor measurement. . . . .41
Fig 17. Package outline HVQFN48 . . . . . . . . . . . . . . . . .73
Fig 18. Package detail wettable flanks. . . . . . . . . . . . . . .74
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Product data sheet
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Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
18. Tables
Table 1. Quick reference data . . . . . . . . . . . . . . . . . . . . .4
Table 2. Ordering information . . . . . . . . . . . . . . . . . . . . .5
Table 3. Marking information . . . . . . . . . . . . . . . . . . . . . .6
Table 4. Pinning description . . . . . . . . . . . . . . . . . . . . . . .9
Table 5. External power supply domains . . . . . . . . . . . .12
Table 6. Limiting values . . . . . . . . . . . . . . . . . . . . . . . . .45
Table 7. Recommended operating conditions . . . . . . . .45
Table 8. RX Characteristics - General . . . . . . . . . . . . . .46
Table 9. RX Characteristics - manchester receiver . . . .47
Table 10. RX Characteristics - Wireless MBUS mode S .50
Table 11. RX Characteristics - Wireless MBUS mode T1
(meter to other device) . . . . . . . . . . . . . . . . . . .51
Table 12. RX Characteristics - Wireless MBUS mode T2
(meter to other device) . . . . . . . . . . . . . . . . . . .51
Table 13. RX Characteristics - Wireless MBUS mode R2
channelised system (meter to other device). . .52
Table 14. RX Characteristics - Wireless MBUS mode C1 53
Table 15. RX Characteristics - Wireless MBUS mode C2 53
Table 16. RX Characteristics - Wireless MBUS mode N .54
Table 17. RX Characteristics - Wireless MBUS mode F .55
Table 18. RX Characteristics - Zigbee 868. . . . . . . . . . . .56
Table 19. RX Characteristics - SigFox . . . . . . . . . . . . . . .56
Table 20. RX Characteristics - Narrowband 400MHz
application . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
Table 21. RX Characteristics - Narrowband 400MHz
application . . . . . . . . . . . . . . . . . . . . . . . . . . . .58
Table 22. RX Characteristics - Narrowband 400MHz
application . . . . . . . . . . . . . . . . . . . . . . . . . . . .59
Table 23. TX Characteristics . . . . . . . . . . . . . . . . . . . . . .59
Table 24. TX Characteristics . . . . . . . . . . . . . . . . . . . . . .62
Table 25. TX Characteristics . . . . . . . . . . . . . . . . . . . . . .64
Table 26. TX Characteristics . . . . . . . . . . . . . . . . . . . . . .67
Table 27. Characteristics for TRX switch . . . . . . . . . . . . .69
Table 28. Characteristics for ESD . . . . . . . . . . . . . . . . . .70
Table 29. Static Characteristics I/O Ports. . . . . . . . . . . . .70
Table 30. Dynamic Characteristics I/O Ports. . . . . . . . . .71
Table 31. SPI / UART . . . . . . . . . . . . . . . . . . . . . . . . . . .71
Table 32. Application relevant limits . . . . . . . . . . . . . . . . .71
Table 33. Revision history . . . . . . . . . . . . . . . . . . . . . . . .78
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Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
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OL2385
NXP Semiconductors
Industrial RF transceiver
19. Contents
1
General information. . . . . . . . . . . . . . . . . . . . . . 1
9.5.12.1 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
9.6
Micro-controller subsystem . . . . . . . . . . . . . . 28
RISC controller. . . . . . . . . . . . . . . . . . . . . . . . 28
System clock . . . . . . . . . . . . . . . . . . . . . . . . . 29
Clock sources . . . . . . . . . . . . . . . . . . . . . . . . 29
Direct Memory Access. . . . . . . . . . . . . . . . . . 30
Interrupt system . . . . . . . . . . . . . . . . . . . . . . . 31
I/O ports . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Timer/Counter 0, 2 . . . . . . . . . . . . . . . . . . . . . 33
Timer/Counter 1 . . . . . . . . . . . . . . . . . . . . . . . 34
Timer 3 and RX chain timers . . . . . . . . . . . . . 35
Polling and wake-up timer . . . . . . . . . . . . . . . 36
Watchdog timer . . . . . . . . . . . . . . . . . . . . . . . 37
USART. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
1.1
2
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 2
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Quick reference data . . . . . . . . . . . . . . . . . . . . . 4
Ordering information. . . . . . . . . . . . . . . . . . . . . 5
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 7
9.6.1
9.6.2
9.6.2.1
9.6.3
9.6.4
9.6.5
9.6.6
9.6.7
9.6.8
9.6.9
9.6.10
9.6.11
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 8
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pin 1 keep out area . . . . . . . . . . . . . . . . . . . . . 8
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1
8.1.1
8.2
9
9.1
9.2
9.2.1
9.2.2
9.2.3
Design information . . . . . . . . . . . . . . . . . . . . . 11
Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Power management . . . . . . . . . . . . . . . . . . . . 12
Modes of operation. . . . . . . . . . . . . . . . . . . . . 12
External power supply domains . . . . . . . . . . . 12
Recommended external capacitors in the supply
domains . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Power supply states . . . . . . . . . . . . . . . . . . . . 15
Local oscillator . . . . . . . . . . . . . . . . . . . . . . . . 17
UHF transmitter subsystem . . . . . . . . . . . . . . 18
General description . . . . . . . . . . . . . . . . . . . . 18
TRX switch . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
UHF receiver subsystem . . . . . . . . . . . . . . . . 20
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Antenna switch . . . . . . . . . . . . . . . . . . . . . . . . 20
LNA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Attenuators . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Mixer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Baseband amplifier (TIA) and DC offset
9.6.11.1 Features: . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
9.6.12 Registers for mathematical- logical operations 39
9.6.12.1 CRC register . . . . . . . . . . . . . . . . . . . . . . . . . 39
9.6.12.2 CRC32 register . . . . . . . . . . . . . . . . . . . . . . . 39
9.6.13
9.6.14
Analog-to-digital converter (ADC) . . . . . . . . . 40
Temperature measurement . . . . . . . . . . . . . . 41
9.6.14.1 External temperature measurement . . . . . . . 41
9.7
9.2.4
9.3
9.4
Device modes . . . . . . . . . . . . . . . . . . . . . . . . 42
INIT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
PROTECTED. . . . . . . . . . . . . . . . . . . . . . . . . 42
TAMPERED . . . . . . . . . . . . . . . . . . . . . . . . . . 42
VIRGIN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
System routines . . . . . . . . . . . . . . . . . . . . . . . 44
Boot routine . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Monitor and download interface. . . . . . . . . . . 44
Hardware abstraction layer . . . . . . . . . . . . . . 44
9.7.1
9.7.2
9.7.3
9.7.4
9.8
9.8.1
9.8.2
9.8.3
9.4.1
9.4.2
9.4.2.1
9.5
9.5.1
9.5.2
9.5.3
9.5.4
9.5.5
9.5.6
10
Characterization information . . . . . . . . . . . . . 45
Limiting values . . . . . . . . . . . . . . . . . . . . . . . . 45
Recommended operating conditions . . . . . . . 45
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 46
10.1
10.2
10.3
compensation . . . . . . . . . . . . . . . . . . . . . . . . . 21
SD ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Digital receiver block diagram. . . . . . . . . . . . . 22
Digital IF preprocessing . . . . . . . . . . . . . . . . . 23
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . 23
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Automatic gain control . . . . . . . . . . . . . . . . . . 24
11
11.1
12
Mechanical information . . . . . . . . . . . . . . . . . 73
Package outline . . . . . . . . . . . . . . . . . . . . . . . 73
Glossary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Revision history . . . . . . . . . . . . . . . . . . . . . . . 78
9.5.7
9.5.8
9.5.9
9.5.9.1
9.5.9.2
9.5.9.3
9.5.10
13
14
15
15
15.1
15.2
15.3
Legal information . . . . . . . . . . . . . . . . . . . . . . 79
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 79
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 80
9.5.10.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
9.5.10.2 Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . 24
9.5.10.3 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
9.5.11
Narrow band receive chain. . . . . . . . . . . . . . . 26
16
17
Contact information . . . . . . . . . . . . . . . . . . . . 81
Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
9.5.11.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
9.5.12
Data processing . . . . . . . . . . . . . . . . . . . . . . . 27
continued >>
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
OL2385
Product data sheet
COMPANY PUBLIC
Rev. 1.0 — 15 June 2016
84 of 85
OL2385
NXP Semiconductors
Industrial RF transceiver
18
19
Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2016.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 June 2016
Document identifier:
相关型号：
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