992215731431 [NXP]
IC SPECIALTY ANALOG CIRCUIT, CPGA96, PGA-96, Analog IC:Other;
| 型号： | 992215731431 |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY ANALOG CIRCUIT, CPGA96, PGA-96, Analog IC:Other |
| 文件： | 总16页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMAGE SENSORS
FTF3020-M
Full Frame CCD Image Sensor
Product specification
1999 November 22
File under Image Sensors
Philips
Semiconductors
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
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35mm film compatible image format (36 x 24 mm2)
6M active pixels (3072H x 2048V)
Progressive scan
Excellent anti-blooming
Variable electronic shuttering
Square pixel structure
H and V binning
100% optical fill factor
High linear dynamic range (>72dB)
High sensitivity
Low dark current and fixed-pattern noise
Low read-out noise
Description
The FTF3020-M is a full frame CCD monochrome image sensor
designed for professional digital photography applications, with very
low dark current and a linear dynamic range of over 12 true bits at
room temperature.The four low-noise output amplifiers, one at each
corner of the chip, make the FTF3020-M suitable for a wide range of
high-end visual light applications. With one output amplifier, a
progressively scanned image can be read out at 5 frames per second.
By using multiple outputs the frame rate increases accordingly. The
device structure is shown in figure 1.
Data rate up to 36 MHz
Mirrored, split and four quadrant read-out
Perfectly matched to visual spectrum
Device structure
6 black lines
Z
Y
Optical size:
Chip size:
Pixel size:
36.864 mm (H) x 24.576 mm (V)
39.148 mm (H) x 26.508 mm (V)
12 µm x 12 µm
Active pixels:
3072 (H) x 2048 (V)
3120 (H) x 2060 (V)
Left: 20 Right: 20
2048
active
lines
2060
lines
Total no. of pixels:
Optical black pixels:
Timing pixels:
Dummy register cells:
Optical black lines:
Image Area
Left: 4
Left: 7
Bottom: 6
Right: 4
Right: 7
Top: 6
20 4
4 20
3072 active pixels
W
X
6 black lines
7
7
3120 cells
Output register
Output amplifier
3134 cells
Figure 1 - Device structure
1999 November
2
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Architecture of the FTF3020-M
The optical centres of all pixels in the image section form a square
grid. The charge is generated and integrated in this section. Output
registers are located below and above the image section for read-
out. After the integration time, the image charge is shifted one line
at the time to either the upper or lower register or to both
simultaneously, depending on the read-out mode. The left and the
right half of each register can be controlled independently. This
enables either single or multiple read-out. During vertical transport,
the C3 gates separate the pixels in the register.The central C3 gates
of the lower and upper registers are part of the left half of the sensor
(W and Z quadrants respectively). Each register can be used for
vertical binning. Each register contains a summing gate at both ends
that can be used for horizontal binning (see figure 2).
IMAGE SECTION
44.30 mm
Image diagonal (active video only)
Aspect ratio
Active image width x height
Pixel width x height
3:2
36.864 x 24.576 mm2
12x12 µm2
100%
Geometric fill factor
Image clock pins
Capacity of each clock phase
Number of active lines
16 pins (A1..A4)
7.5nF per pin
2048
Number of black reference lines
Number of dummy black lines
Total number of lines
4 (=2x2)
8 (=2x4)
2060
Number of active pixels per line
Number of overscan (timing) pixels per line
Number of black reference pixels per line
Total number of pixels per line
3072
8 (2x4)
40 (2x20)
3120
OUTPUT REGISTERS
Output buffers on each corner
Number of registers
Three-stage source follower
2
Number of dummy cells per register
Number of register cells per register
Output register horizontal transport clock pins
Capacity of each C-clock phase
Overlap capacity between neighbouring C-clocks
Output register Summing Gates
Capacity of each SG
14 (2x7)
3134 (3120+14)
6 pins per register (C1..C3)
200 pF per pin
40pF
4 pins (SG)
15pF
Reset Gate clock phases
Capacity of each RG
4 pins (RG)
15pF
1999 November
3
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
7 dummy pixels
3K image
pixels
20 black & 4 timing
columns
7 dummy pixels
20 black &4 timing
columns
RD
RD
RG
RG
OG SG C2 C1 C3
C2 C1 C3 C2 C1 CC33 C2 C1 C3
C2 C1 C3 C2 C1 C3
C2 C1 C3 C2 C1 C3
C2 C1 C3 C2 C1 C3 C2 C1 C3
C2 C1 SG OG
A1
A2
A3
A4
A1
A2
A3
A4
OUT_Z
OUT_Y
6 black
lines
A1
A1
A1
A1
A2
A3
A4
A1
A2
A3
A4
A2
A3
A4
A1
A2
A3
A4
One Pixel
IMAGE
3K x 2K
FF CCD
2K active
images
lines
A1
A1
A1
A1
A2
A3
A4
A1
A2
A3
A4
A2
A3
A4
A1
A2
A3
A4
SG: summing gate
OG: output gate
RG: reset gate
RD: reset drain
6 black
lines
A1
A1
A1
A1
A2
A3
A4
A1
A2
A3
A4
A1
OUT_W
OUT_X
C3
C3
C3
C3
C3
C3
C3
C3
C3
C3
C3
C3
C2 C1
OG SG C2 C1
C2 C1
C2 C1
C2 C1
C2 C1
C2 C1
C2 C1
C2 C1
C2 C1
C2 C1
C2 C1 SG OG
RG
RG
RD
RD
column
1
column
24 + 1
column
24 + 3K
column
24 +3K +24
A1, A2, A3, A4: clocks of image section
C1, C2, C3: clocks of horizontal registers
Figure 2 - Detailed internal structure
1999 November
4
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Specifications
ABSOLUTE MAXIMUM RATINGS1
MIN.
MAX.
UNIT
GENERAL:
storage temperature
-55
-40
-20
-0.2
0
+80
+60
+20
+2.0
10
°C
°C
V
µA
mA
ambient temperature during operation
voltage between any two gates
DC current through any clock phase (absolute value)
OUT current (no short circuit protection)
VOLTAGES IN RELATION TO VPS:
VNS, SFD, RD
VCS, SFS
-0.5
-8
-5
+30
+5
+25
V
V
V
all other pins
VOLTAGES IN RELATION TO VNS:
SFD, RD
VCS, SFS, VPS
-15
-30
-30
+0.5
+0.5
+0.5
V
V
V
all other pins
DC CONDITIONS2
MIN. [V]
TYPICAL [V]
MAX. [V]
MAX. [mA]
15
15
4.5
1
-
-
-
VNS3
VPS
SFD
SFS
VCS
OG
N substrate
P substrate
18
1
16
0
24
3
20
0
0
6.5
15.5
28
7
24
0
Source Follower Drain
Source Follower Source
Current Source
Output Gate
-5
4
3
8
RD
Reset Drain
13
18
AC CLOCK LEVEL CONDITIONS2
MIN.
TYPICAL
MAX.
UNIT
IMAGE CLOCKS:
A-clock amplitude during integration and hold
A-clock amplitude during vertical transport (duty cycle=5/8)4
A-clock low level
8
10
10
14
0
V
V
V
V
Charge Reset (CR) level on A-clock 5
-5
-5
OUTPUT REGISTER CLOCKS:
C-clock amplitude (duty cycle during hor. transport = 3/6)
C-clock low level
Summing Gate (SG) amplitude
Summing Gate (SG) low level
4.75
2
5
5.25
10
V
V
V
V
3.5
10
3.5
OTHER CLOCKS:
Reset Gate (RG) amplitude
Reset Gate (RG) low level
Charge Reset (CR) pulse on Nsub
5
0
10
3
10
10
10
V
V
V
5
1 During Charge Reset it is allowed to exceed maximum rating levels (see note 5).
2 All voltages in relation to SFS.
3 To set the VNS voltage for optimal Vertical Anti-Blooming (VAB), it should be adjustable between minimum and maximum values.
4 Three-level clock is preferred for maximum charge; the swing during vertical transport should be 4V higher than the voltage during integration.
A two level clock (typically 10V) can be used if a lower maximum charge handling capacity is allowed.
5 Charge Reset can be achieved in two ways:
• The typical A-clock low level is applied to all image clocks; for proper CR, an additional Charge Reset pulse on VNS is required (preferred).
• The typical CR level is applied to all image clocks simultaneously.
1999 November
5
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Timing diagrams (for default operation)
AC CHARACTERISTICS
Horizontal frequency (1/Tp) 1
Vertical frequency
MIN.
TYPICAL
18
50
193.7
20
5
MAX.
UNIT
MHz
kHz
µs
ns
ns
36
100
Charge Reset (CR) time
10
10
3
3
3
Rise and fall times: image clocks (A)
register clocks (C)2
1/6 Tp
1/6 Tp
1/6 Tp
summing gate (SG)
reset gate (RG)
5
5
ns
ns
1 Tp = 1 clock period
2 Duty cycle = 50% and phase shift of the C clocks is 120 degrees.
Frame Timing
Dummy
Black
B
Sensor Output
D
B
B
B
B
B
B
B
B
B
D
1
2
3
2046 2047 2048
H
L
SSC
H
L
A1
H
L
A2, A3, A4
CR
H
L
H
L
*
Ahigh
H
L
VD
H
L
BLC
H
L
EXT. SHUTTER
Integration Time
Line Timing
H
SSC
L
H
L
360 Tp
230Tp
66 Tp
A1
138 Tp
H
L
A2
20 Tp
138 Tp
H
L
A3
112Tp
138 Tp
H
L
A4
204Tp
H
L
CR
H
L
*
AHigh
360 Tp
H
L
VD
H
L
BLC
30 Tp
396 Tp
Pixel Timing
3127 pixels
H
SSC
L
H
L
1Tp
C1
H
L
C2
H
L
C3
H
L
SG
RG
Tp / 6
H
L
Tp = 1 / 18MHz = 55.56ns
Pixel output sequence: 7 dummy, 20 black, 4 timing, 3072 active, 4 timing, 20 black
Line Time: 3487 x Tp = 193.7µs
* During AHigh = H the phiA high level is increased from 10V to 14V (This is necessary during readout only)
VD: Frame pulse
CR: Charge Reset
BLC: Black Level Clamp
C1 to C3: Horizontal register clocks
SSC: Start-Stop C-clocks
SG: Summing gate
A1 to A4: Vertical image clocks
RG: Reset gate
Figure 3 - Timing diagrams
1999 November
6
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Line timing
SSC
A1
A2
A3
A4
—> time
Y / Div. :
10V (A1, A2, A3, A 4); 5V (SSC)
Figure 4 - Vertical readout
Pixel timing
C1
C2
C3
SG
RG
—> time
Y / Div. :
5V (C1, C2, C3); 10V (SG, RG)
Figure 5 - Start horizontal readout
1999 November
7
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Performance
The test conditions for the performance characteristics are as follows:
• All values are measured using typical operating conditions.
• VNS is adjusted as low as possible while maintaining proper
Vertical Anti-Blooming.
• Sensor temperature = 60°C (333K).
• Horizontal transport frequency = 18MHz.
• Integration time = 10ms (unless specified otherwise).
• The light source is a lamp of 3200K in conjunction with neutral
density filters and a 1.7mm thick BG40 infrared cut-off filter. For
Linear Operation measurements, a temperature conversion filter
(Melles Griot type no. 03FCG261, -120 mired, thickness: 2.5mm)
is applied.
• Vertical transport frequency = 50kHz (unless specified otherwise).
LINEAR OPERATION
MIN.
TYPICAL
MAX.
UNIT
Linear dynamic range 1
4200:1(12bit)
Charge Transfer Efficiency 2 vertical
Charge Transfer Efficiency 2 horizontal
Image lag
0.999995
0.999999
0
%
%
Resolution (MTF) @ 42 lp/mm
Responsivity
65
180
20
250
26
kel/lux·s
Quantum efficiency @ 530 nm
Low Pass Shading 3
Random Non-Uniformity (RNU) 4
VNS required for good Vertical Anti-Blooming (VAB)
Power dissipation at 2.5 frames/s
%
2.0
0.3
24
5
%
5
%
18
28
V
610
mW
1 Linear dynamic range is defined as the ratio of Qlin to read-out noise (the latter reduced by Correlated Double Sampling).
2 Charge Transfer Efficiency values are tested by evaluation and expressed as the value per gate transfer.
3 Low Pass Shading is defined as the ratio of the one-σ value of an 8x8 pixels blurred image (low-pass) to the mean signal value.
4 RNU is defined as the ratio of the one-σ value of the highpass image to the mean signal value at nominal light.
Linear Dynamic Range
14,000
35°C
12,000
45°C
10,000
55°C
8,000
6,000
4,000
2,000
0
0
5
10
15
20
25
30
35
40
Hor. Frequency (MHz)
Figure 6 - Typical Linear dynamic range vs. horizontal read-out frequency and sensor temperature
1999 November
8
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Maximum Read-out Speed
20
18
16
14
12
10
8
4 outputs
2 outputs
1 output
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
Integration time (ms)
Figure 7 - Maximum number of images/second versus integration time
Quantum Efficiency
30
25
20
15
10
5
0
400
450
500
550
600
650
700
750
800
Wavelength (nm)
Figure 8 - Quantum efficiency versus wavelength
1999 November
9
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
LINEAR/SATURATION
MIN.
TYPICAL
MAX.
UNIT
Full-well capacity saturation level (Qmax) 1
Full-well capacity shading (Qmax, shading) 2
Full-well capacity linear operation (Qlin) 3
Charge handling capacity 4
240
180
500
600
50
kel.
%
10
350
600
200
kel.
kel.
Overexposure 5 handling
x Qmax level
1 Qmax is determined from the lowpass filtered image.
2 Qmax, shading is the maximum difference of the full-well charges of all pixels, relative to Qmax.
3 The linear full-well capacity Qlin is calculated from linearity test (see dynamic range). The evaluation test guarantees 97% linearity.
4 Charge handling capacity is the largest charge packet that can be transported through the register and read-out through the output buffer.
5 Overexposure over entire area while maintaining good Vertical Anti-Blooming (VAB). It is tested by measuring the dark line.
Charge Handling vs. Integration/Transport Voltage
600
10V/14V
500
9V/13V
400
300
8V/12V
200
100
0
1
2
3
4
5
6
Exposure (arbitrary units)
Figure 9 - Charge handling versus integration/transport voltage
1999 November
10
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
OUTPUT BUFFERS
MIN.
TYPICAL
MAX.
UNIT
Conversion factor
Mutual conversion factor matching (∆ACF)1
5
7.5
10
2
µV/el.
0
µV/el.
mA
4.5
110
400
Supply current
MHz
Ω
Bandwidth
Output impedance buffer (Rload = 3.3kΩ, Cload = 2pF)
1 Matching of the four outputs is specified as ∆ACF with respect to reference measured at the operating point (Qlin/2).
DARK CONDITION
MIN.
TYPICAL
MAX.
UNIT
Dark current level @ 30° C
Dark current level @ 60° C
Fixed Pattern Noise 1 (FPN) @ 60° C
20
30
0.6
25
30
pA/cm2
nA/cm2
el.
0.3
15
25
el.
RMS readout noise @ 9MHz bandwidth after CDS
1 FPN is the one-σ value of the highpass image.
Dark Current
1000
100
10
1
0
10
20
30
40
50
60
Temp. (oC)
Figure 10 - Dark current versus temperature
1999 November
11
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Application information
Current handling
One of the purposes of VPS is to drain the holes that are generated
during exposure of the sensor to light. Free electrons are either
transported to the VRD connection and, if excessive (from over-
exposure), free electrons are drained to VNS. No current should
flow into anyVPS connection of the sensor.During high overexposure
a total current 10 to 15mA through all VPS connections together
may be expected. The PNP emitter follower in the circuit diagram
(figure 11) serves these current requirements.
emitter and the next stage short. The CCD output buffer can easily
be destroyed by ESD. By using this emitter follower, this danger is
suppressed; do NOT reintroduce this danger by measuring directly
on the output pin of the sensor with an oscilloscope probe. Instead,
measure on the output of the emitter follower. Slew rate limitation is
avoided by avoiding a too-small quiescent current in the emitter
follower; about 10mA should do the job. The collector of the emitter
follower should be decoupled properly to suppress the Miller effect
from the base-collector capacitance.
VNS drains superfluous electrons as a result of overexposure. In
other words, it only sinks current. During high overexposure a total
current of 10 to 15mA through all VNS connections together may be
expected. The NPN emitter follower in the circuit diagram meets
these current requirements.The clamp circuit, consisting of the diode
and electrolytic capacitor, enables the addition of a Charge Reset
(CR) pulse on top of an otherwise stable VNS voltage.To protect the
CCD, the current resulting from this pulse should be limited. This
can be accomplished by designing a pulse generator with a rather
high output impedance.
A CCD output load resistor of 3.3kΩ typically results in a bandwidth
of 110MHz. The bandwidth can be enlarged to about 130MHz by
using a resistor of 2.2kΩ instead, which, however, also enlarges the
on-chip power dissipation.
Device protection
The output buffers of the FTF3020-M are likely to be damaged if
VPS rises above SFD or RD at any time.This danger is most realistic
during power-on or power-off of the camera.The RD voltage should
always be lower than the SFD voltage.
Decoupling of DC voltages
Never exceed the maximum output current. This may damage the
device permanently. The maximum output current should be limited
to 10mA.
Be especially aware that the output buffers of these image sensors
are very sensitive to ESD damage.
All DC voltages (not VNS, which has additional CR pulses as
described above) should be decoupled with a 100nF decoupling
capacitor. This capacitor must be mounted as close as possible to
the sensor pin. Further noise reduction (by bandwidth limiting) is
achieved by the resistors in the connections between the sensor
and its voltage supplies. The electrons that build up the charge
packets that will reach the floating diffusions only add up to a small
current, which will flow throughVRD.Therefore a large series resistor
in the VRD connection may be used.
Because of the fact that our CCDs are built on an n-type substrate,
we are dealing with some parasitic npn transistors.To avoid activation
of these transistors during switch-on and switch-off of the camera,
we recommend the application diagram of figure 11.
Outputs
Unused sections
To limit the on-chip power dissipation, the output buffers are designed
with open source outputs. Outputs to be used should therefore be
loaded with a current source or more simply with a resistance to
GND. In order to prevent the output (which typically has an output
impedance of about 400Ω) from bandwidth limitation as a result of
capacitive loading, load the output with an emitter follower built from
a high-frequency transistor.Mount the base of this transistor as close
as possible to the sensor and keep the connection between the
To reduce power consumption the following steps can be taken.
Connect unused output register pins (C1...C3, SG, OG) and unused
SFS pins to zero Volts.
More information
Detailed application information is provided in the application note
AN01 entitled ‘Camera Electronics for the mK x nK CCD Image
Sensor Family’.
1999 November
12
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Device Handling
An image sensor is a MOS device which can be destroyed by electro-
static discharge (ESD). Therefore, the device should be handled
with care.
When cleaning the glass we recommend using ethanol (or possibly
water). Use of other liquids is strongly discouraged:
• if the cleaning liquid evaporates too quickly, rubbing is likely to
cause ESD damage.
Always store the device with short-circuiting clamps or on conductive
foam.Always switch off all electric signals when inserting or removing
the sensor into or from a camera (the ESD protection in the CCD
image sensor process is less effective than the ESD protection of
standard CMOS circuits).
• the cover glass and its coating can be damaged by other liquids.
Rub the window carefully and slowly.
Being a high quality optical device, it is important that the cover
glass remain undamaged.When handling the sensor, use fingercots.
Dry rubbing of the window may cause electro-static charges or
scratches which can destroy the device.
VSFD
CR pulse
0
keep short
<10mm!
BC
850C
-
keep short!
+
VNS
SFD
BFR
OUT
92A
BAT74
100 Ω
output for
preprocessing
BC
850C
BAT74
27Ω
BAT74
Schottky!
VPS
VRD
VCS
15Ω
BAT74
Schottky!
860C
10kΩ
BC
VOG
10kΩ
10kΩ
Figure 11 - Application diagram to protect the FTF3020-M
1999 November
13
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Pin configuration
The image clock phases of quadrant W are internally connected to
X, and Y is connected to Z.
The FTF3020-M is mounted in a Pin Grid Array (PGA) package with
96 pins in a 20x15 grid of 52.70 x 40.00 mm2.The position of pin A1
(quadrant W) is marked with a gold dot on top of the package.
Symbol
VNS
Name
Pin # W
A1
A5
C2
G1
A2
B2
D2
C1
B3
D1
B5
A3
A4
B4
F2
Pin # X
U1
U5
S2
M1
U2
T2
R2
S1
T3
R1
T5
U3
U4
T4
N2
N1
M2
P1
P2
T1
K1
K2
L1
Pin # Y
U10
U6
S9
M10
U9
T9
R9
S10
T8
R10
T6
U8
U7
T7
N9
N10
M9
E10
P9
T10
K10
K9
Pin # Z
A10
A6
C9
G10
A9
B9
D9
C10
B8
D10
B6
A8
A7
B7
F9
F10
G9
P10
E9
B10
I10
I9
H10
H9
N substrate
N substrate
N substrate
N substrate
VNS
VNS
VNS
VPS
SFD
SFS
VCS
OG
RD
A1
A2
A3
A4
C1
C2
C3
SG
RG
OUT
NC
NC
NC
P substrate
Source Follower Drain
Source Follower Source
Current Source
Output Gate
Reset Drain
Image Clock (Phase 1)
Image Clock (Phase 2)
Image Clock (Phase 3)
Image Clock (Phase 4)
Register Clock (Phase 1)
Register Clock (Phase 2)
Register Clock (Phase 3)
Summing Gate
Reset Gate
Output
Not Connected
Not Connected
F1
G2
E1
E2
B1
I1
I2
H1
H2
Not Connected
Not Connected
L10
L9
NC
L2
K
L
M
N
P
R
S
T
U
A
B
C
D
E
F
G
H
J
10
9
8
7
6
TOP
Z
Y
X
W
FTF3020-M
5
4
3
2
1
Figure 12 - FTF3020-M pin configuration (top view)
1999 November
14
Philips Semiconductors
Product specification
Full Frame CCD Image Sensor
FTF3020-M
Package information
Top cover glass to top chip 2.4 ±0.25
Chip - bottom package 1.7 ±0.15
Chip - cover glass 1.3 ±0.20
Cover glass 1.0 ±0.05
SENSOR CRYSTAL
EPOXY GLUE
COVER GLASS
Image sensor chip
A
1.4 /100
TOP VIEW
INDEX
MARK
PIN1
26.35±0.15
COVER GLASS
52.7 0.53
±
(2.54)
STAND-OFF PIN
0.46 0.05
±
A is the center of the image area.
Position of A:
26.35 ± 0.15 to left edge of package
20.00 ± 0.15 to upper edge of package
1.7 ± 0.15 to bottom of package
Angle of rotation: less than ± 1°
Sensor flatness: < 20 µm (P-V)
BOTTOM VIEW
Cover glass: Corning 7059
Thickness of cover glass: 1 ± 0.05
Refractive index: nd = 1.53
Double sided AR coating < 1% (430-660 nm) reflection
All drawing units are in mm
48.26 0.27
±
Figure 13 - Mechanical drawing of the PGA package of the FTF3020-M
1999 November
15
Order codes
The sensors can be ordered using the following codes:
FTF3020-M sensors
Description
FTF3020-M/TG
FTF3020-M/EG
FTF3020-M/IG
FTF3020-M/HG
Quality Grade
Order Code
Test grade
9922 157 31431
9922 157 31451
9922 157 31421
9922 157 31411
Economy grade
Industrial grade
High grade
You can contact the Image Sensors division of Philips
Semiconductors at the following address:
Philips Semiconductors
Image Sensors
Internal Postbox WAG-05
Prof. Holstlaan 4
5656 AA Eindhoven
The Netherlands
phone
fax
+31 - 40 - 27 44 400
+31 - 40 - 27 44 090
www.semiconductors.philips.com/imagers/
Philips
Semiconductors
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