A2T18H450W19S [NXP]
N--Channel Enhancement--Mode Lateral MOSFET;
| 型号： | A2T18H450W19S |
| 厂家： | 
NXP |
| 描述： | N--Channel Enhancement--Mode Lateral MOSFET |
| 文件： | 总8页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A2T18H450W19S
Rev. 0, 9/2016
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
A2T18H450W19SR6
This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 1805 to 1880 MHz.
1800 MHz
1805–1880 MHz, 89 W AVG., 30 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc,
DQA = 800 mA, VGSB = 0.9 Vdc, Pout = 89 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
I
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1805 MHz
1840 MHz
1880 MHz
(dB)
16.6
16.7
16.5
(%)
47.1
47.5
47.7
7.9
8.0
7.9
–31.4
–32.9
–38.8
Features
NI--1230S--4S4S
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Designed for Digital Predistortion Error Correction Systems
(2)
(2)
VBW
1
2
8
7
VBW
AG
AD
Carrier
(1)
RF /V
RF /V
outA DSA
inA GSA
RF /V
RF /V
outB DSB
3
4
6
5
inB GSB
Peaking
(2)
(2)
VBW
VBW
BG
BD
(Top View)
Figure 1. Pin Connections
1. Pin connections 6 and 7 are DC coupled
and RF independent.
2. Device cannot operate with the V current
DD
supplied through pins 1, 4, 5, and 8.
Freescale Semiconductor, Inc., 2016. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +125
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.27
C/W
JC
Case Temperature 73C, 89 W Avg., W--CDMA, 30 Vdc, I
= 800 mA, V
= 0.9 Vdc,
GSB
DQA
1840 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
B
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
(4)
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
On Characteristics -- Side A, Carrier
Gate Threshold Voltage
V
0.8
1.6
1.2
1.8
1.6
1.9
0.3
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 200 Adc)
DS
D
Gate Quiescent Voltage
(V = 30 Vdc, I = 800 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.0 Adc)
V
0.05
0.15
DS(on)
GS
D
On Characteristics -- Side B, Peaking
Gate Threshold Voltage
V
0.8
1.2
1.6
0.3
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 360 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3.6 Adc)
V
0.05
0.15
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 800 mA, V = 0.9 Vdc,
GSB
Max
Unit
(1,2,3)
Functional Tests -- 1805 MHz
(In Freescale Doherty Test Fixture, 50 ohm system) V = 30 Vdc, I
DD
DQA
P
= 89 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
15.5
45.0
7.5
16.6
47.1
7.9
18.5
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
—
dB
Adjacent Channel Power Ratio
ACPR
—
–31.4
–30.0
dBc
(1,2,3)
Functional Tests -- 1880 MHz
(In Freescale Doherty Test Fixture, 50 ohm system) V = 30 Vdc, I
= 800 mA, V = 0.9 Vdc,
GSB
DD
DQA
P
= 89 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
15.5
45.0
7.5
16.5
47.7
7.9
18.5
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
—
dB
dBc
ACPR
—
–33.8
–30.0
(3)
Load Mismatch (In Freescale Doherty Test Fixture, 50 ohm system) I
= 800 mA, V
= 0.9 Vdc, f = 1840 MHz, 12 sec(on),
GSB
DQA
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 420 W Pulsed CW Output Power
(3 dB Input Overdrive from 250 W Pulsed CW Rated Power)
No Device Degradation
(3)
Typical Performance
(In Freescale Doherty Test Fixture, 50 ohm system) V = 30 Vdc, I
= 800 mA, V = 0.9 Vdc,
GSB
DD
DQA
1805–1880 MHz Bandwidth
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
—
—
199
550
–20
—
—
—
W
W
out
out
(4)
@ 3 dB Compression Point
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
140
0.4
—
MHz
res
Gain Flatness in 75 MHz Bandwidth @ P = 89 W Avg.
G
—
—
—
—
dB
out
F
Gain Variation over Temperature
G
0.008
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.027
—
dB/C
(–30C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
A2T18H450W19SR6
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
NI--1230S--4S4S
1. V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
2. Part internally matched both on input and output.
3. Measurements made with device in an asymmetrical Doherty configuration.
4. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
3
0
C1
V
GGA
C32
V
DDA
C11
D60917
C22
C7
C13
C16
C18
C27
C35
C20
C
C33*
R1
C10
C6
C3
C28
C29
C4
C12
C14
C23
C24
Z1
P
R2
R3
C8*
C5
A2T18H450
Rev. 1
C34
C21
C19
C30
C17
C9
C25
C15
C26
V
DDB
C31
C2
V
GGB
*C8 and C33 are mounted vertically.
Note: V and V must be tied together and powered by a single DC power supply.
DDA
DDB
Figure 2. A2T18H450W19SR6 Test Circuit Component Layout
Table 6. A2T18H450W19SR6 Test Circuit Component Designations and Values
Part
Description
10 F Chip Capacitors
Part Number
Manufacturer
TDK
C1, C2, C31, C32
C5750X7R1H106M230KB
ATC600S220JT250XT
C3, C9, C13, C16, C17, C22,
C23, C24, C25, C26, C34, C35
22 pF Chip Capacitors
ATC
C4
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
TDK
C5, C7, C18, C19, C20, C21,
C27, C30
4.7 F Chip Capacitors
C4532X7R1H475M200KB
C6
0.2 pF Chip Capacitor
ATC600S0R2BT250XT
ATC100B1R8BT500XT
ATC100B220GT500XT
ATC
ATC
ATC
C8
1.8 pF Chip Capacitor
C10
C11, C15
C12
C14
C28, C29
C33
R1
22 pF Chip Capacitor
470 F, 63 V Electrolytic Capacitors
3 pF Chip Capacitor
MCGPR63V477M13X26--RH Multicomp
ATC600S3R0BT250XT
ATC600S2R4BT250XT
ATC600S4R7CT250XT
ATC100B0R2BT500XT
WCR0805-4R7F
ATC
2.4 pF Chip Capacitor
ATC
4.7 pF Chip Capacitors
ATC
0.2 pF Chip Capacitor
ATC
4.7 , 1/8 W Chip Resistor
2.2 , 1/8 W Chip Resistor
50 , 10 W Chip Termination
1700–2000 MHz Band, 90, 5 dB Directional Coupler
Welwyn
Welwyn
Anaren
Anaren
MTL
R2
WCR0805-2R2F
R3
060120A25X50-2
X3C19P1-05S
Z1
PCB
Rogers RO4350B, 0.020, = 3.66
D60917
r
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
4
PACKAGE DIMENSIONS
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
5
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
6
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2016
Initial release of data sheet
A2T18H450W19SR6
RF Device Data
Freescale Semiconductor, Inc.
7
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E 2016 Freescale Semiconductor, Inc.
Document Number: A2T18H450W19S
Rev. 0, 9/2016
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