A3G35H100-04SR3 [NXP]
RF Power GaN Transistor;
| 型号： | A3G35H100-04SR3 |
| 厂家： | 
NXP |
| 描述： | RF Power GaN Transistor |
| 文件： | 总10页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3G35H100--04S
Rev. 0, 05/2018
NXP Semiconductors
Technical Data
RF Power GaN Transistor
This 14 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 3400 to 3600 MHz.
A3G35H100--04SR3
This part is characterized and performance is guaranteed for applications
operating in the 3400 to 3600 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
3400–3600 MHz, 14 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
3500 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
DQA = 80 mA, VGSB = –5.0 Vdc, Pout = 14 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
I
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
3400 MHz
3500 MHz
3600 MHz
(dB)
14.0
14.0
14.0
(%)
43.8
41.4
42.5
9.6
9.7
9.6
–34.0
–34.5
–32.2
NI--780S--4L
Features
Carrier
High terminal impedances for optimal broadband performance
Advanced high performance in--package Doherty
Able to withstand extremely high output VSWR and broadband operating
conditions
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
Peaking
(Top View)
Figure 1. Pin Connections
2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
DSS
V
–8, 0
GS
DD
V
0 to +55
13.4
Maximum Forward Gate Current @ T = 25C
I
GMAX
C
Storage Temperature Range
T
stg
–65 to +150
–55 to +150
–55 to +225
275
Case Operating Temperature Range
Operating Junction Temperature Range
T
C
C
T
J
C
(1)
Absolute Maximum Junction Temperature
T
MAX
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
(2)
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
R
(IR)
2.3
C/W
JC
Case Temperature 71C, P = 24.3 W
D
(3)
Thermal Resistance by Finite Element Analysis, Junction--to--Case
R
JC
(FEA)
3.88
C/W
Case Temperature 90C, P = 24 W
D
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Drain--Source Breakdown Voltage
(V = –8 Vdc, I = 5.4 mAdc)
V
—
—
Vdc
(BR)DSS
Carrier
Peaking
150
150
GS
D
(V = –8 Vdc, I = 8.04 mAdc)
GS
D
On Characteristics -- Side A, Carrier
Gate Threshold Voltage
V
–3.8
–3.6
–1.7
–3.1
–2.9
—
–2.3
–2.6
—
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 5.4 mAdc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 80 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Gate--Source Leakage Current
(V = 0 Vdc, V = –5 Vdc)
I
mAdc
GSS
DS
GS
On Characteristics -- Side B, Peaking
Gate Threshold Voltage
V
–3.8
–2.5
–3.2
—
–2.3
—
Vdc
GS(th)
(V = 10 Vdc, I = 8.04 mAdc)
DS
D
Gate--Source Leakage Current
(V = 0 Vdc, V = –5 Vdc)
I
mAdc
GSS
DS
GS
1. Functional operation above 225C has not been characterized and is not implied. Operation at T
(275C) reduces median time to failure
MAX
by an order of magnitude; operation beyond T
could cause permanent damage.
MAX
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. R
(FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by
JC
[A + B/(T + 273)]
the expression MTTF (hours) = 10
, where T is the junction temperature in degrees Celsius, A = –10.3 and B = 8260.
4. Each side of device measured separately.
(continued)
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 80 mA, V
= –5.0 Vdc, P = 14 W Avg.,
DD
DQA
GSB
out
f = 3600 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
G
13.0
37.7
8.8
14.0
42.5
9.6
15.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
—
dB
dBc
ACPR
—
–32.2
–29.5
(2)
Load Mismatch (In NXP Doherty Test Fixture, 50 ohm system) I
= 80 mA, V
= –5.1 Vdc, f = 3500 MHz, 12 sec(on), 10% Duty
GSB
DQA
Cycle
VSWR 10:1 at 55 Vdc, 158 W Pulsed CW Output Power
(3 dB Input Overdrive from 91 W Pulsed CW Rated Power)
No Device Degradation
(2)
Typical Performance
(In NXP Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 80 mA, V
= –5.1 Vdc, 3400–3600 MHz
GSB
DD
DQA
Bandwidth
(3)
P
@ 3 dB Compression Point
P3dB
—
—
100
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
–32
the 3400–3600 MHz bandwidth)
VBW Resonance Point
VBW
—
260
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 200 MHz Bandwidth @ P = 14 W Avg.
G
—
—
0.31
—
—
dB
out
F
Gain Variation over Temperature
G
0.011
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.006
—
dB/C
(–30C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
Package
A3G35H100--04SR3
NI--780S--4L
1. Part internally input matched.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set V to –5 V
GS
2. Turn on V to nominal supply voltage (48 V)
DS
3. Increase V until I current is attained
GS
DS
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce V down to –5 V
GS
3. Reduce V down to 0 V (Adequate time must be allowed
DS
for V to reduce to 0 V to prevent severe damage to device.)
DS
4. Turn off V
GS
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
3
V
V
GGA
DDA
R2
C15
A3G35H100-04S
Rev. 5
C10
C3
C9
C2
R3 R4
C4
C
C 11
C12
R1
Z1
C1
C6
P
cut out
area
C5
R6 R5
C7
C13
D109679
C8
C14
C16
R7
V
V
DDB
GGB
aaa-- 0 30282
Figure 2. A3G35H100--04SR3 Test Circuit Component Layout
Table 6. A3G35H100--04SR3 Test Circuit Component Designations and Values
Part
Description
0.1 pF Chip Capacitor
Part Number
Manufacturer
C1, C6
ATC600F0R1BT250XT
C5750X7S2A106M230KB
ATC600F5R1BT250XT
ATC600F4R3BT250XT
MCGPR100V227M16X26
C10A50Z4
ATC
C2, C8, C10, C14
10 F Chip Capacitor
TDK
C3, C4, C5, C7, C9, C11, C13
5.1 pF Chip Capacitor
ATC
C12
4.3 pF Chip Capacitor
ATC
C15, C16
R1
220 F, 100 V Electrolytic Capacitor
50 , 10 W Chip Resistor
51 k, 1/4 W Chip Resistor
3 , 1/4 W Chip Resistor
Multicomp
Anaren
Vishay
Vishay
Yageo
Vishay
Anaren
MTL
R2, R7
R3, R6
R4
CRCW120651K0FKEA
CRCW12063R00JNEA
RC1206FR--071R5L
CRCW12061R00FKEA
X3C35F1-02S
1.5 , 1/4 W Chip Resistor
1 , 1/4 W Chip Resistor
R5
Z1
3300--3800 MHz Band, 90, 2 dB Hybrid Coupler
PCB
Rogers RO4350B, 0.020, = 3.66
D109679
r
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
4
TYPICAL CHARACTERISTICS — 3400–3600 MHz
14.4
14.3
14.2
14.1
14
47
V
= 48 Vdc, P = 14 W (Avg.), I
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
= 80 mA, V
= –5.0 Vdc
DD
out
DQA
GSB
45
D
43
41
G
39
ps
0
13.9
13.8
13.7
13.6
13.5
13.4
–27
–29
–31
–33
–35
–37
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
–0.2
–0.4
–0.6
–0.8
–1
PARC
ACPR
3380 3410 3440 3470 3500 3530 3560 3590 3620
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 14 Watts Avg.
–20
V
V
= 48 Vdc, P = 6 W (PEP), I
= 80 mA
DD
out
DQA
IM3--U
IM3--L
= –5.0 Vdc, Two--Tone Measurements
GSB
–30
–40
–50
–60
–70
IM5--U
IM5--L
IM7--L
IM7--U
(f1 + f2)/2 = Center Frequency of 3500 MHz
1
10
100
300
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–10
60
55
1
14.5
14
V
= 48 Vdc, I
= 80 mA, V
= –5.0 Vdc, f = 3500 MHz
DD
DQA
GSB
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
D
–15
–20
–25
–30
–35
–40
0
G
ps
13.5
–1
–2
–3
–4
–5
50
45
40
35
–1 dB =
17.4 W
13
12.5
12
ACPR
–2 dB = 23.4 W
–3 dB = 31.4 W
PARC
50
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
11.5
30
10
20
30
40
60
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
5
TYPICAL CHARACTERISTICS — 3400–3600 MHz
15
5
18
16
14
12
10
8
65
55
45
35
25
15
5
V
= 48 Vdc, I
= 80 mA, V = –5.0 Vdc
GSB
3600 MHz
DD
DQA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
3400 MHz
3600 MHz
3400 MHz
G
ps
3500 MHz
–5
D
3500 MHz
–15
–25
–35
3600 MHz
3500 MHz
3400 MHz
ACPR
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
10
–45
6
1
100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
16
14
12
10
8
V
P
= 48 Vdc
= 0 dBm
= 80 mA
DD
in
I
DQA
V
= –5.0 Vdc
GSB
Gain
6
2600 2800 3000 3200 3400 3600 3800 4000 4200
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
6
PACKAGE DIMENSIONS
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
7
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
8
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2018
Initial release of data sheet
A3G35H100--04SR3
RF Device Data
NXP Semiconductors
9
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implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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including without limitation consequential or incidental damages. “Typical” parameters
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names are the property of their respective owners.
E 2018 NXP B.V.
Document Number: A3G35H100--04S
Rev. 0, 05/2018
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