A3T23H450W23SR6 [NXP]
RF Power Field-Effect Transistor;
| 型号： | A3T23H450W23SR6 |
| 厂家： | 
NXP |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：684K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: A3T23H450W23S
Rev. 0, 08/2018
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2300 to 2400 MHz.
A3T23H450W23SR6
2300–2400 MHz, 87 W AVG., 30 V
AIRFAST RF POWER LDMOS
TRANSISTOR
2300 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc,
IDQA = 650 mA, VGSB = 0.65 Vdc, Pout = 87 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2300 MHz
2350 MHz
2400 MHz
(dB)
14.7
15.1
15.2
(%)
47.0
46.4
46.5
7.8
7.6
7.5
–30.7
–31.7
–33.3
Features
ACP--1230S--4L2S
Advanced high performance in--package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate--source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating
conditions
(2)
6
5
VBW
A
Carrier
Designed for digital predistortion error correction systems
RF /V
1
2
RF /V
outA DSA
inA GSA
(1)
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(2)
VBW
B
(Top View)
Figure 1. Pin Connections
1. Pin connections 4 and 5 are DC coupled
and RF independent.
2. Device can operate with
V
current
DD
supplied through pin 3 and pin 6.
2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
CW Operation @ T = 25C when DC current is fed through pin 3 and pin 6
Derate above 25C
CW
166
1.0
W
W/C
C
Table 2. Thermal Characteristics
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.15
C/W
JC
Case Temperature 78C, 87 W Avg., W--CDMA, 30 Vdc, I
= 650 mA,
DQA
V
= 0.65 Vdc, 2350 MHz
GSB
Table 3. ESD Protection Characteristics
Test Methodology
Class
2
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C3
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
5
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
On Characteristics -- Side A, Carrier
Gate Threshold Voltage
V
1.3
2.2
0.1
1.8
2.6
2.3
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 180 Adc)
DS
D
Gate Quiescent Voltage
(V = 30 Vdc, I = 650 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.8 Adc)
V
0.15
DS(on)
GS
D
On Characteristics -- Side B, Peaking
Gate Threshold Voltage
V
0.8
0.1
1.2
1.6
0.3
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 360 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3.6 Adc)
V
0.15
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Side A and Side B are tied together for these measurements.
(continued)
A3T23H450W23SR6
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2,3)
Functional Tests
(In NXP Doherty Test Fixture, 50 ohm system) V = 30 Vdc, I
= 650 mA, V
= 0.65 Vdc, P = 87 W Avg.,
DD
DQA
GSB
out
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
14.0
44.2
56.4
—
14.7
47.0
57.4
17.0
—
dB
%
ps
D
Drain Efficiency
P
@ 3 dB Compression Point, CW
P3dB
ACPR
—
dBm
dBc
out
Adjacent Channel Power Ratio
–30.7
–27.5
(3)
Load Mismatch
(In NXP Doherty Test Fixture, 50 ohm system) I
= 650 mA, V
= 0.65 Vdc, f = 2350 MHz, 12 sec(on),
GSB
DQA
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 501 W Pulsed CW Output Power
(3 dB Input Overdrive from 301 W Pulsed CW Rated Power)
No Device Degradation
(3)
Typical Performance
(In NXP Doherty Test Fixture, 50 ohm system) V = 30 Vdc, I
= 650 mA, V
= 0.65 Vdc, 2300–2400 MHz
GSB
DD
DQA
Bandwidth
(4)
P
@ 3 dB Compression Point
P3dB
—
—
562
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
–21
the 2300–2400 MHz bandwidth)
VBW Resonance Point
VBW
—
240
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 100 MHz Bandwidth @ P = 87 W Avg.
G
—
—
0.25
—
—
dB
out
F
Gain Variation over Temperature
G
0.004
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.004
—
dB/C
(–40C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
A3T23H450W23SR6
ACP--1230S--4L2S
1. V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
2. Part internally matched both on input and output.
3. Measurements made with device in an asymmetrical Doherty configuration.
4. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A3T23H450W23SR6
RF Device Data
NXP Semiconductors
3
V
DDA
V
GGA
C17
C15
C7
C5
R1
Cꢀ11
C13
D112575
C3
C1
C
C9
R3
C10
Z1
C4
C2
P
cut out
area
R2
C16
C14
C8
C6
C12
C18
V
GGB
V
DDB
aaa-030961
Note: V
and V
must be tied together and powered by a single DC power supply.
DDB
DDA
Figure 2. A3T23H450W23SR6 Test Circuit Component Layout
Table 6. A3T23H450W23SR6 Test Circuit Component Designations and Values
Part
Description
1.2 pF Chip Capacitor
Part Number
Manufacturer
C1
C2
ATC600F1R2BT250XT
ATC600F0R8BT250XT
ATC600F8R2BT250XT
C5750X7S2A106M230KB
ATC600F3R0BT250XT
ATC600F5R1BT250XT
MCGPR63V477M13X26
CRCW08053R30FKEA
RFP-375375N6Z50-2
X3C25P1-02S
ATC
0.8 pF Chip Capacitor
8.2 pF Chip Capacitor
ATC
C3, C4, C5, C6, C11, C12
ATC
C7, C8, C13, C14, C15, C16 10 F Chip Capacitor
TDK
C9
3.0 pF Chip Capacitor
ATC
C10
5.1 pF Chip Capacitor
ATC
C17, C18
R1, R2
R3
470 F, 63 V Electrolytic Capacitor
3.3 , 1/8 W Chip Resistor
Multicomp
Vishay
Anaren
Anaren
MTL
50 , 30 W Termination Resistor
2300–2700 MHz Band, 90, 2 dB Hybrid Coupler
Z1
PCB
Rogers RO4350B, 0.020, = 3.66
D112575
r
A3T23H450W23SR6
RF Device Data
NXP Semiconductors
4
PACKAGE DIMENSIONS
A3T23H450W23SR6
RF Device Data
NXP Semiconductors
5
A3T23H450W23SR6
RF Device Data
NXP Semiconductors
6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2018
Initial release of data sheet
A3T23H450W23SR6
RF Device Data
NXP Semiconductors
7
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E 2018 NXP B.V.
Document Number: A3T23H450W23S
Rev. 0, 08/2018
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