ACTT6B-800E,118 [NXP]
ACTT6B-800E;
| 型号： | ACTT6B-800E,118 |
| 厂家： | 
NXP |
| 描述： | ACTT6B-800E 三端双向交流开关 |
| 文件： | 总14页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
K
A
P
2
ACTT6B-800E
AC Thyristor Triac power switch
D
27 February 2013
Product data sheet
1. General description
AC Thyristor Triac power switch in a SOT404 (D2PAK) surface mountable plastic
package with self-protective clamping capabilities against low and high energy transients.
2. Features and benefits
Clamping structure ensuring safe high over-voltage withstand capability
Direct interfacing with low power drivers and microcontrollers
Full cycle AC conduction
Over-voltage withstand capability to IEC 61000-4-5
Pin compatible with standard triacs
Planar passivated for voltage ruggedness and reliability
Protective self turn-on capability for high energy transients
Safe clamping capability for low energy over-voltage transients
Sensitive gate for easy logic level triggering
Surface mountable package
•
•
•
•
•
•
•
•
•
•
•
•
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
AC fan, pump and compressor controls
Highly inductive, resistive and safety loads
Large and small appliances (White Goods)
Reversing induction motor controls
•
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VDRM
repetitive peak off-
state voltage
-
-
800
V
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
-
-
51
A
state current
tp = 20 ms; Fig. 4; Fig. 5
Tj
junction temperature
RMS on-state current
-
-
-
-
125
6
°C
A
IT(RMS)
full sine wave; Tmb ≤ 108 °C; Fig. 1;
Fig. 2; Fig. 3
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPP
peak pulse voltage
Tj = 25 °C; non-repetitive, off-state;
Fig. 6
-
-
2
kV
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 8
-
-
-
-
-
10
10
10
-
mA
mA
mA
V
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
-
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
-
VCL
clamping voltage
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
850
Dynamic charateristics
dVD/dt
rate of rise of off-state VDM = 536 V; Tj = 125 °C; (VDM = 67%
500
10
-
-
-
-
V/µs
voltage
of VDRM); exponential waveform; gate
open circuit; Fig. 13
dIcom/dt
rate of change of
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 1 V/µs; gate open circuit;
Fig. 14; Fig. 15
A/ms
commutating current
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
LD
1
CM
LD
G
common
2
load
G
3
gate
CM
003aaf296
mb
LD
mounting base; load
2
1
3
D2PAK (SOT404)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
ACTT6B-800E
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
ACTT6B-800E
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Product data sheet
27 February 2013
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
800
6
Unit
V
repetitive peak off-state voltage
RMS on-state current
-
-
IT(RMS)
full sine wave; Tmb ≤ 108 °C; Fig. 1;
Fig. 2; Fig. 3
A
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
-
-
56
51
13
A
A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
I2t
I2t for fusing
A2s
A/µs
A
tp = 10 ms; sine-wave pulse
dIT/dt
IGM
rate of rise of on-state current
peak gate current
IT = 9 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
t = 20 μs
-
100
2
-
PGM
PG(AV)
Tstg
Tj
peak gate power
-
5
W
average gate power
storage temperature
junction temperature
peak pulse voltage
over any 20 ms period
-
0.5
150
125
2
W
-40
°C
°C
kV
-
-
VPP
Tj = 25 °C; non-repetitive, off-state;
Fig. 6
003aag775
003aag777
8
18
T(RMS)
(A)
I
I
T(RMS)
(A)
15
108 °C
6
4
2
0
12
9
6
3
0
10
-2
-1
10
1
10
-50
0
50
100
150
surge duration (s)
T
(°C)
mb
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
ACTT6B-800E
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Product data sheet
27 February 2013
3 / 14
NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
003aag780
105
10
conduction form
°
α = 180
T
P
mb(max)
(°C)
tot
angle
(degrees)
factor
a
107
109
111
(W)
°
120
8
6
4
2
0
30
60
90
120
180
4
2.8
2.2
1.9
1.57
°
°
90
60
30
α
113
115
117
119
121
°
123
125
0
1.5
3
4.5
6
7.5
I
(A)
T(RMS)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
003aag781
60
I
TSM
(A)
45
30
15
0
I
I
TSM
T
t
T
T
= 25 °C max
j(init)
2
3
1
10
10
10
number of cycles
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
ACTT6B-800E
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Product data sheet
27 February 2013
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
003aag782
3
10
I
I
T
TSM
t
I
TSM
(A)
t
p
T
j(init)
= 25 °C max
(1)
2
10
10
-2
10
-1
2
10
1
10
10
t
(ms)
p
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
R
Gen
2
Filtering Unit
L
R
2
H
18
R
G
DUT
Load Model
AC Mains
220
003aak842
Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
8. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
K/W
K/W
Rth(j-mb)
thermal resistance
from junction to
mounting base
half cycle; Fig. 7
full cycle; Fig. 7
-
-
-
-
2.4
2
Rth(j-a)
thermal resistance
from junction to
ambient
printed circuit board (FR4) mounted
-
55
-
K/W
ACTT6B-800E
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Product data sheet
27 February 2013
5 / 14
NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
003aag784
10
Z
th(j-mb)
(K/W)
(2)
1
(1)
-1
10
10
-2
-5
10
-4
-3
-2
-1
10
10
10
10
1
10
t
p
(s)
(1) Bidirectional (full cycle)
(2) Unidirectional (half cycle)
Fig. 7. Transient thermal impedance from junction to mounting base as a function of pulse width
9. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 8
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
30
40
30
mA
mA
mA
mA
mA
mA
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
IL
latching current
VD = 12 V; IG = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 9
VD = 12 V; IG = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IG = 100 mA; LD- G-;
Tj = 25 °C; Fig. 9
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 10
IT = 8 A; Tj = 25 °C; Fig. 11
-
-
-
-
25
1.7
1
mA
V
VT
VGT
on-state voltage
gate trigger voltage
-
VD = 12 V; IT = 100 mA; Tj = 25 °C;
Fig. 12
0.8
V
VD = 400 V; IT = 100 mA; Tj = 125 °C;
Fig. 12
0.2
-
0.45
-
-
V
ID
off-state current
VD = 800 V; Tj = 25 °C
10
µA
ACTT6B-800E
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Product data sheet
27 February 2013
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
Symbol
Parameter
Conditions
Min
-
Typ
Max
0.5
-
Unit
mA
V
VD = 800 V; Tj = 125 °C
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
-
-
VCL
clamping voltage
850
Dynamic charateristics
dVD/dt
rate of rise of off-state VDM = 536 V; Tj = 125 °C; (VDM = 67%
500
3.5
-
-
-
-
V/µs
voltage
of VDRM); exponential waveform; gate
open circuit; Fig. 13
dIcom/dt
rate of change of
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 14;
Fig. 15
A/ms
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 10 V/µs; gate open circuit;
Fig. 14; Fig. 15
5
-
-
-
-
A/ms
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 1 V/µs; gate open circuit;
Fig. 14; Fig. 15
10
003aag786
003aag785
3
3
(1)
I
I
L
GT
I
I
L(25°C)
GT(25°C)
2
(2)
(3)
2
1
1
0
0
-50
0
50
100
150
-50
0
50
100
150
T (°C)
j
T (°C)
j
(1) LD- G-
Fig. 9. Normalized latching current as a function of
junction temperature
(2) LD+ G+
(3) LD+ G-
Fig. 8. Normalized gate trigger current as a function of
junction temperature
ACTT6B-800E
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Product data sheet
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
003aag788
003aag787
3
20
I
T
(A)
I
H
I
16
H(25°C)
2
12
8
1
0
(1)
4
(2)
(3)
0
-50
0
50
100
150
0
1
2
3
T (°C)
j
V (V)
T
Vo = 1.109 V; Rs = 0.076 Ω
(1) Tj = 125 °C; typical values
Fig. 10. Normalized holding current as a function of
junction temperature
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 11. On-state current as a function of on-state
voltage
003aag677
003aag789
1.6
6
V
GT
A
B
V
GT(25°C)
1.2
4
2
0
0.8
0.4
-50
0
50
100
150
25
50
75
100
125
T (°C)
j
T (°C)
j
A is dVD/dt at condition Tj °C
B is dVD/dt at condition Tj 125 °C
Fig. 12. Normalized gate trigger voltage as a function of
junction temperature
Fig. 13. Normalized rate of rise of off-state voltage as a
function of junction temperature
ACTT6B-800E
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Product data sheet
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
003aag791
003aag790
12
40
A [B]
A
B
A [spec]
30
8
4
0
20
10
0
-1
2
25
50
75
100
125
10
1
10
10
T (°C)
j
B (V/µs)
A is dIcom/dt at condition Tj °C
A[B] is dIcom/dt at condition B, dVcom/dt
B is dIcom/dt at condition Tj 125 °C
VD = 400 V
A[spec] is the specified data sheet value of dIcom/dt
turn-off time < 20 ms
Fig. 15. Normalized critical rate of change of
commutating current as a function of critical
rate of change of commutating voltage;
minimum values
Fig. 14. Normalized critical rate of rise of commutating
current as a function of junction temperature
ACTT6B-800E
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Product data sheet
27 February 2013
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
10. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
1
E
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
b
2
e
e
Q
0
5 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
b
c
D
D
1
E
e
H
D
L
p
Q
1
2
max 4.5 1.40 0.85 1.45 0.64 11
nom
min 4.1 1.27 0.60 1.05 0.46
1.6 10.3
1.2 9.7
15.8 2.9 2.6
14.8 2.1 2.2
2.54
mm
sot404_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
06-03-16
13-02-25
SOT404
Fig. 16. Package outline D2PAK (SOT404)
ACTT6B-800E
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Product data sheet
27 February 2013
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
11. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.15
1.50
2.25
8.275
8.35
8.15
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
occupied area
solder paste
msd057
5.08
Fig. 17. Reflow soldering footprint for D2PAK (SOT404)
ACTT6B-800E
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Product data sheet
27 February 2013
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NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
ACTT6B-800E
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© NXP B.V. 2013. All rights reserved
Product data sheet
27 February 2013
12 / 14
NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
ACTT6B-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
27 February 2013
13 / 14
NXP Semiconductors
ACTT6B-800E
AC Thyristor Triac power switch
13. Contents
1
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Limiting values .......................................................3
Thermal characteristics .........................................5
Characteristics .......................................................6
Package outline ................................................... 10
Soldering .............................................................. 11
2
3
4
5
6
7
8
9
10
11
12
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
12.1
12.2
12.3
12.4
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 February 2013
ACTT6B-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
27 February 2013
14 / 14
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